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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BSC032N03SG | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc032n03sg-datasheets-7900.pdf | 30V | 50A | 8-PowerTDFN | Lead Free | 5 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | FLAT | 260 | 8 | 40 | 2.8W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | 7ns | 5.4 ns | 32 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8W Ta 78W Tc | 23A | 200A | 0.0049Ohm | 550 mJ | 30V | N-Channel | 5080pF @ 15V | 3.2m Ω @ 50A, 10V | 2V @ 70μA | 23A Ta 100A Tc | 39nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTP30N06LG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb30n06lt4g-datasheets-7786.pdf | 60V | 30A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 88.2W | 1 | FET General Purpose Power | Not Qualified | 200ns | 62 ns | 15.6 ns | 30A | 15V | SILICON | DRAIN | SWITCHING | 88.2W Tc | TO-220AB | 90A | 0.046Ohm | 60V | N-Channel | 1150pF @ 25V | 46m Ω @ 15A, 5V | 2V @ 250μA | 30A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||
| BUZ11_R4941 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-buz11r4941-datasheets-7905.pdf | TO-220-3 | TO-220-3 | 50V | 75W Tc | N-Channel | 2000pF @ 25V | 40mOhm @ 15A, 10V | 4V @ 1mA | 30A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMSD6N303R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmsd6n303r2g-datasheets-7915.pdf | 30V | 6A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 2W | 1 | FET General Purpose Power | Not Qualified | 22ns | 45 ns | 45 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2W Ta | 6A | 30A | 0.032Ohm | 325 mJ | 30V | N-Channel | 950pF @ 24V | 32m Ω @ 6A, 10V | 2.5V @ 250μA | 6A Ta | 30nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| MMFT960T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mmft960t1-datasheets-6285.pdf | 60V | 300mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | No SVHC | 1.7Ohm | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | Single | 40 | 800mW | 1 | FET General Purpose Power | 300mA | 30V | SILICON | DRAIN | SWITCHING | 800mW Ta | 0.3A | 60V | N-Channel | 65pF @ 25V | 1 V | 1.7 Ω @ 1A, 10V | 3.5V @ 1mA | 300mA Tc | 3.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| NTP85N03RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 28V | 85A | TO-220-3 | Lead Free | 22ns | 85A | 80W Tc | N-Channel | 2150pF @ 24V | 6.8m Ω @ 40A, 10V | 3V @ 250μA | 85A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP65N02RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp65n02r-datasheets-6613.pdf | 24V | 65A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 62.5W | 1 | FET General Purpose Power | Not Qualified | 53ns | 10 ns | 14 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 25V | 1.04W Ta 62.5W Tc | TO-220AB | 7.6A | 160A | 0.0105Ohm | 60 mJ | 24V | N-Channel | 1330pF @ 20V | 10.5m Ω @ 20A, 10V | 2V @ 250μA | 7.6A Ta 58A Tc | 9.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NDS336P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | /files/onsemiconductor-nds336p-datasheets-7927.pdf | -20V | -1.2A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Single | 500mW | 1 | 29ns | 29 ns | 33 ns | 1.2A | 8V | 20V | 500mW Ta | -20V | P-Channel | 360pF @ 10V | 200m Ω @ 1.3A, 4.5V | 1V @ 250μA | 1.2A Ta | 8.5nC @ 4.5V | 2.7V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS4435 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds4435-datasheets-7922.pdf | -30V | -8.8A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 130mg | No SVHC | 20MOhm | 8 | yes | Single | 2.5W | 1 | 13.5ns | 25 ns | 42 ns | 8.8A | 25V | -30V | 30V | -1.7V | 2.5W Ta | -30V | P-Channel | 1604pF @ 15V | -1.7 V | 20m Ω @ 8.8A, 10V | 3V @ 250μA | 8.8A Ta | 24nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| NDS8434A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 1997 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds8434a-datasheets-7932.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 20V | 2.5W Ta | P-Channel | 1730pF @ 10V | 24mOhm @ 7.9A, 4.5V | 1V @ 250μA | 7.8A Ta | 55nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTP18N06G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-ntb18n06t4g-datasheets-7772.pdf | 60V | 15A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | No | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 48.4W | 1 | FET General Purpose Power | 10 ns | 25ns | 13 ns | 14 ns | 15A | 20V | 60V | SILICON | DRAIN | SWITCHING | 48.4W Tc | TO-220AB | 45A | 0.09Ohm | 61 mJ | 60V | N-Channel | 450pF @ 25V | 2.9 V | 90m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| NTP75N03RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntp75n03r-datasheets-6626.pdf | 25V | 75A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 74.4W | 1 | FET General Purpose Power | Not Qualified | 1.3ns | 18.4 ns | 9.7A | 20V | SILICON | DRAIN | SWITCHING | 1.25W Ta 74.4W Tc | TO-220AB | 225A | 71.7 mJ | 25V | N-Channel | 1333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 9.7A Ta | 13.2nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR40N50Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfr40n50q2-datasheets-7894.pdf | 500V | 29A | ISOPLUS247™ | Lead Free | 3 | 170MOhm | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 320W | 1 | FET General Purpose Power | Not Qualified | 13ns | 8 ns | 42 ns | 29A | 30V | SILICON | ISOLATED | SWITCHING | 320W Tc | 160A | 2500 mJ | 500V | N-Channel | 4200pF @ 25V | 170m Ω @ 20A, 10V | 5V @ 4mA | 29A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| NTP4302G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb4302t4g-datasheets-7769.pdf | 30V | 74A | TO-220-3 | Lead Free | 3 | EAR99 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 70ns | 30 ns | 32 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | TO-220AB | 175A | 0.0093Ohm | 722 mJ | 30V | N-Channel | 2400pF @ 24V | 9.3m Ω @ 37A, 10V | 3V @ 250μA | 74A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| VN2222LLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/onsemiconductor-vn2222llg-datasheets-7842.pdf | 60V | 150mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 453.59237mg | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | No | Single | 400mW | 1 | TO-92-3 | 60pF | 10 ns | 10 ns | 150mA | 20V | 60V | 2.5V | 400mW Ta | 7.5Ohm | 60V | N-Channel | 60pF @ 25V | 7.5Ohm @ 500mA, 10V | 2.5V @ 1mA | 150mA Ta | 7.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTB75N03L09T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-ntb75n03l09t4g-datasheets-7845.pdf | 30V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8MOhm | 3 | OBSOLETE (Last Updated: 19 hours ago) | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130ns | 105 ns | 65 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 125W Tc | 225A | 30V | N-Channel | 5635pF @ 25V | 8m Ω @ 37.5A, 5V | 2V @ 250μA | 75A Tc | 75nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||
| NTP18N06LG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp18n06lg-datasheets-7848.pdf | 60V | 15A | TO-220-3 | Lead Free | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 48.4W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 121ns | 42 ns | 11 ns | 15A | 10V | SILICON | DRAIN | SWITCHING | 48.4W Tc | TO-220AB | 45A | 60V | N-Channel | 440pF @ 25V | 100m Ω @ 7.5A, 5V | 2V @ 250μA | 15A Tc | 20nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| NTP30N20G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp30n20g-datasheets-7850.pdf | 200V | 30A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | AVALANCHE RATED | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 214W | 1 | FET General Purpose Power | Not Qualified | 20ns | 24 ns | 40 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 2.9V | 214W Tc | TO-220AB | 90A | 450 mJ | 200V | N-Channel | 2335pF @ 25V | 81m Ω @ 15A, 10V | 4V @ 250μA | 30A Ta | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| NTMS3P03R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntms3p03r2g-datasheets-7852.pdf | -30V | -3.05A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 2W | 1 | Other Transistors | Not Qualified | 16ns | 45 ns | 45 ns | 3.05A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 730mW Ta | 2.34A | 135 pF | -30V | P-Channel | 750pF @ 24V | -1.7 V | 85m Ω @ 3.05A, 10V | 2.5V @ 250μA | 2.34A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTP45N06LG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb45n06lt4g-datasheets-0452.pdf | 60V | 45A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 125W | 1 | FET General Purpose Power | Not Qualified | 341ns | 158 ns | 36 ns | 45A | 15V | SILICON | DRAIN | SWITCHING | 2.4W Ta 125W Tj | TO-220AB | 0.028Ohm | 240 mJ | 60V | N-Channel | 1700pF @ 25V | 28m Ω @ 22.5A, 5V | 2V @ 250μA | 45A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||
| NTP52N10G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp52n10g-datasheets-7857.pdf | 100V | 52A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 214W | 1 | FET General Purpose Power | Not Qualified | 95ns | 100 ns | 74 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 214W Tc | TO-220AB | 156A | 800 mJ | 100V | N-Channel | 3150pF @ 25V | 30m Ω @ 26A, 10V | 4V @ 250μA | 60A Ta | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQA24N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/onsemiconductor-fqa24n50-datasheets-7869.pdf&product=onsemiconductor-fqa24n50-6858591 | 500V | 24A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 200mOhm | 3 | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 290W | 1 | Not Qualified | 80 ns | 250ns | 155 ns | 200 ns | 24A | 30V | 500V | SILICON | SWITCHING | 290W Tc | 96A | 500V | N-Channel | 4500pF @ 25V | 5 V | 200m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| NTF3055L108T3LFG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntf3055l108t1g-datasheets-8182.pdf | 60V | 3A | TO-261-4, TO-261AA | Lead Free | 4 | 4 | EAR99 | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 4 | 40 | 2.1W | 1 | FET General Purpose Power | Not Qualified | 35ns | 27 ns | 22 ns | 3A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.3W Ta | 3A | 9A | 0.12Ohm | 60V | N-Channel | 440pF @ 25V | 120m Ω @ 1.5A, 5V | 2V @ 250μA | 3A Ta | 15nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||
| NTP27N06G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp27n06g-datasheets-7879.pdf | 60V | 27A | TO-220-3 | Lead Free | 3 | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 88.2W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 62.7ns | 70.4 ns | 26.6 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 88.2W Tc | TO-220AB | 80A | 0.046Ohm | 109 mJ | 60V | N-Channel | 1015pF @ 25V | 46m Ω @ 13.5A, 10V | 4V @ 250μA | 27A Ta | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTP75N03L09G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb75n03l09t4g-datasheets-7845.pdf | 30V | 75A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 125W | 1 | FET General Purpose Power | Not Qualified | 130ns | 105 ns | 65 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 125W Tc | TO-220AB | 225A | 0.008Ohm | 1500 mJ | 30V | N-Channel | 5635pF @ 25V | 8m Ω @ 37.5A, 5V | 2V @ 250μA | 75A Tc | 75nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||
| NTP60N06LG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp60n06lg-datasheets-7883.pdf | 60V | 60A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 150W | 1 | FET General Purpose Power | Not Qualified | 576ns | 237 ns | 100 ns | 60A | 15V | SILICON | DRAIN | SWITCHING | 2.4W Ta 150W Tj | TO-220AB | 454 mJ | 60V | N-Channel | 3075pF @ 25V | 16m Ω @ 30A, 5V | 2V @ 250μA | 60A Ta | 65nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||
| IPB100N06S3L-03 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb100n06s3l03-datasheets-7862.pdf | 55V | 100A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | GULL WING | 260 | 4 | Single | 40 | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 70ns | 77 ns | 110 ns | 100A | 16V | SILICON | DRAIN | SWITCHING | 300W Tc | 400A | 0.0043Ohm | 690 mJ | 55V | N-Channel | 26240pF @ 25V | 2.7m Ω @ 80A, 10V | 2.2V @ 230μA | 100A Tc | 550nC @ 10V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| NTD70N03R-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd70n03r1g-datasheets-7840.pdf | 28V | 60A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.87W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 1.3ns | 1.3 ns | 18.4 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 1.36W Ta 62.5W Tc | 32A | 25V | N-Channel | 1333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 10A Ta 32A Tc | 13.2nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTD14N03RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 27 ns | 9.6 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 11.4A | 28A | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NIF9N05CLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-nif9n05clt3g-datasheets-7799.pdf | 52V | 2.6A | TO-261-4, TO-261AA | Lead Free | 4 | 4 | CONSULT SALES OFFICE (Last Updated: 4 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 4 | 40 | 1.69W | 1 | FET General Purpose Power | 290ns | 290 ns | 1.54 μs | 2.6A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 59V | 1.69W Ta | 52V | N-Channel | 250pF @ 35V | 125m Ω @ 2.6A, 10V | 2.5V @ 100μA | 2.6A Ta | 7nC @ 4.5V | 3V 10V | ±15V |
