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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTMS4N01R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntms4n01r2g-datasheets-7837.pdf | 20V | 4.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 8 | OBSOLETE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 2.5W | 1 | FET General Purpose Power | Not Qualified | 35ns | 50 ns | 45 ns | 4.2A | 10V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 950mV | 770mW Ta | 3.3A | 0.04Ohm | 100 pF | 20V | N-Channel | 1200pF @ 10V | 950 mV | 40m Ω @ 4.2A, 4.5V | 1.2V @ 250μA | 3.3A Ta | 16nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||
| NTD14N03RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | 8541.29.00.95 | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 40 | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 27 ns | 9.6 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 11.4A | 28A | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NIF9N05CLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-nif9n05clt3g-datasheets-7799.pdf | 52V | 2.6A | TO-261-4, TO-261AA | Lead Free | 4 | 4 | CONSULT SALES OFFICE (Last Updated: 4 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 4 | 40 | 1.69W | 1 | FET General Purpose Power | 290ns | 290 ns | 1.54 μs | 2.6A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 59V | 1.69W Ta | 52V | N-Channel | 250pF @ 35V | 125m Ω @ 2.6A, 10V | 2.5V @ 100μA | 2.6A Ta | 7nC @ 4.5V | 3V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||
| NTD25P03L1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-ntd25p03lt4g-datasheets-2079.pdf | -30V | -25A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | NO | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 75W | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 37ns | 16 ns | 15 ns | 25A | 15V | SILICON | DRAIN | SWITCHING | 30V | 75W Tj | 75A | 0.08Ohm | 200 mJ | -30V | P-Channel | 1260pF @ 25V | 80m Ω @ 25A, 5V | 2V @ 250μA | 25A Ta | 20nC @ 5V | 4V 5V | ±15V | |||||||||||||||||||||||||||||||||||||||
| NTB85N03T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb85n03t4-datasheets-6313.pdf | 28V | 85A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | OBSOLETE (Last Updated: 22 hours ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22ns | 30 ns | 32 ns | 85A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 15A | 45A | 0.0068Ohm | 61 mJ | 28V | N-Channel | 2150pF @ 24V | 6.8m Ω @ 40A, 10V | 3V @ 250μA | 85A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR4104PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4104trpbf-datasheets-7029.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 140W Tc | TO-252AA | 42A | 480A | 0.0055Ohm | 145 mJ | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTP90N02G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntp90n02g-datasheets-7816.pdf | 24V | 90A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 85W | 1 | FET General Purpose Power | Not Qualified | 90ns | 60 ns | 28 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 85W Tc | TO-220AB | 200A | 0.0058Ohm | 24V | N-Channel | 2120pF @ 20V | 5.8m Ω @ 90A, 10V | 3V @ 250μA | 90A Ta | 29nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTD32N06LT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd32n06lt4g-datasheets-7818.pdf | 24V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 93.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 221ns | 128 ns | 37 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta 93.75W Tj | 90A | 0.028Ohm | 60V | N-Channel | 1700pF @ 25V | 28m Ω @ 16A, 5V | 2V @ 250μA | 32A Ta | 50nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTD32N06T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd32n06t4g-datasheets-7820.pdf | 60V | 32A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 93.75W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 84ns | 93 ns | 31 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta 93.75W Tj | 90A | 0.026Ohm | 60V | N-Channel | 1725pF @ 25V | 26m Ω @ 16A, 10V | 4V @ 250μA | 32A Ta | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFL9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfl9014trpbf-datasheets-9739.pdf | -60V | -1.8A | TO-261-4, TO-261AA | 6.7mm | 1.45mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 500mOhm | 4 | Tin | 18A | 60V | 1 | Single | 2W | 1 | SOT-223 | 270pF | 11 ns | 63ns | 31 ns | 9.6 ns | -1.8A | 20V | 60V | -4V | 2W Ta 3.1W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | 500mOhm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTMSD2P102LR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmsd2p102lr2g-datasheets-7826.pdf | -20V | -2.3A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 2W | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | 35ns | 29 ns | 33 ns | 2.3A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 710mW Ta | 0.09Ohm | 175 pF | -20V | P-Channel | 750pF @ 16V | 90m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2.3A Ta | 18nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| IRFR020PBF | Vishay Siliconix | $1.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr020trpbf-datasheets-8493.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 1.437803g | 3 | EAR99 | FAST SWITCHING | No | GULL WING | 260 | 3 | 1 | Single | 40 | 1 | R-PSSO-G2 | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 2.5W Ta 42W Tc | 56A | N-Channel | 640pF @ 25V | 100m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLR7821PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr7821pbf-datasheets-7774.pdf | 30V | 65A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | No SVHC | 10MOhm | 3 | EAR99 | No | Single | 75W | 1 | 11 ns | 4.2ns | 3.2 ns | 10 ns | 65A | 20V | 30V | 1V | 75W Tc | 30V | N-Channel | 1030pF @ 15V | 1 V | 10m Ω @ 15A, 10V | 1V @ 250μA | 65A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTB30N06LT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb30n06lt4g-datasheets-7786.pdf | 60V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 88.2W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 200ns | 62 ns | 15.6 ns | 30A | 15V | SILICON | DRAIN | SWITCHING | 88.2W Tc | 90A | 0.046Ohm | 60V | N-Channel | 1150pF @ 25V | 46m Ω @ 15A, 5V | 2V @ 250μA | 30A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| 2N7000RLRAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/onsemiconductor-2n7000rlrag-datasheets-7719.pdf&product=onsemiconductor-2n7000rlrag-6858562 | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 4.445mm | 4.318mm | 3.175mm | Lead Free | 3 | 4.535924g | No SVHC | 5Ohm | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 10 ns | 10 ns | 200mA | 20V | SILICON | 3V | 350mW Tc | 0.2A | 5 pF | 60V | N-Channel | 60pF @ 25V | 3 V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| VN2410LG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/onsemiconductor-vn2410lg-datasheets-7792.pdf | 240V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 8ns | 8 ns | 23 ns | 200mA | 20V | SWITCHING | 350mW Tc | 0.2A | 20 pF | 240V | N-Channel | 125pF @ 25V | 2 V | 10 Ω @ 500mA, 10V | 2V @ 1mA | 200mA Ta | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTMSD3P102R2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-ntmsd3p102r2g-datasheets-7794.pdf | -20V | -3.05A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | OBSOLETE (Last Updated: 1 week ago) | yes | EAR99 | unknown | e3 | Tin (Sn) | DUAL | GULL WING | 260 | 8 | 40 | 2W | 1 | Other Transistors | Not Qualified | 16ns | 45 ns | 45 ns | 2.34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 730mW Ta | 135 pF | -20V | P-Channel | 750pF @ 16V | 85m Ω @ 3.05A, 10V | 2.5V @ 250μA | 2.34A Ta | 25nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTB13N10T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb13n10t4g-datasheets-7754.pdf | 100V | 13A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 64.7W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 40ns | 36 ns | 20 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 64.7W Ta | 0.165Ohm | 85 mJ | 100V | N-Channel | 550pF @ 25V | 165m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BS107AG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/onsemiconductor-bs107ag-datasheets-7756.pdf | 200V | 250mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | Copper, Silver, Tin | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | Not Qualified | 250mA | 20V | SILICON | SWITCHING | 350mW Ta | 0.25A | 200V | N-Channel | 60pF @ 25V | 6.4 Ω @ 250mA, 10V | 3V @ 1mA | 250mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTD80N02-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd80n02001-datasheets-6262.pdf | 24V | 80A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | 260 | 4 | Single | 40 | 75W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 67ns | 40 ns | 28 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 75W Tc | 200A | 0.0058Ohm | 733 mJ | 24V | N-Channel | 2600pF @ 20V | 5.8m Ω @ 80A, 10V | 3V @ 250μA | 80A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD23N03R-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd23n03r1g-datasheets-7763.pdf | 25V | 23A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 260 | 4 | Single | NOT SPECIFIED | 16.4W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 14.9ns | 2 ns | 9.9 ns | 17.1A | 20V | SILICON | DRAIN | SWITCHING | 1.14W Ta 22.3W Tc | 3.8A | 0.06Ohm | 25V | N-Channel | 225pF @ 20V | 45m Ω @ 6A, 10V | 2V @ 250μA | 3.8A Ta 17.1A Tc | 3.76nC @ 4.5V | 4V 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTP125N02RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb125n02rt4g-datasheets-7703.pdf | 24V | 125A | TO-220-3 | Lead Free | 3 | 3 | OBSOLETE (Last Updated: 2 days ago) | yes | No | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 2.72W | 1 | FET General Purpose Power | 11 ns | 39ns | 21 ns | 27 ns | 15.9A | 20V | SILICON | DRAIN | SWITCHING | 1.98W Ta 113.6W Tc | TO-220AB | 95A | 250A | 0.0062Ohm | 120 mJ | 24V | N-Channel | 3440pF @ 20V | 4.6m Ω @ 20A, 10V | 2V @ 250μA | 15.9A Ta | 28nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| MTP23P06VG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-mtp23p06v-datasheets-6676.pdf | -60V | -23A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 90W | 1 | Other Transistors | Not Qualified | 98.3ns | 62 ns | 41 ns | 23A | 15V | SILICON | DRAIN | SWITCHING | 90W Tc | TO-220AB | 794 mJ | 60V | P-Channel | 1620pF @ 25V | 120m Ω @ 11.5A, 10V | 4V @ 250μA | 23A Tc | 50nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||
| NTB4302T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-ntb4302t4g-datasheets-7769.pdf | 30V | 74A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22ns | 35 ns | 45 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 175A | 722 mJ | 30V | N-Channel | 2400pF @ 24V | 9.3m Ω @ 37A, 10V | 3V @ 250μA | 74A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTB18N06T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb18n06t4g-datasheets-7772.pdf | 60V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | EAR99 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 48.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 25ns | 13 ns | 14 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 48.4W Tc | 45A | 0.09Ohm | 61 mJ | 60V | N-Channel | 450pF @ 25V | 90m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLL014PBF | Vishay Siliconix | $17.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irll014trpbf-datasheets-2710.pdf | 60V | 2.7A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 200mOhm | 3 | 1 | Single | 2W | 1 | SOT-223 | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 2.7A | 10V | 60V | 2V | 2W Ta 3.1W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 1.6A, 5V | 2V @ 250μA | 2.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| NTD14N03R-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 27ns | 27 ns | 9.6 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 11.4A | 28A | 0.13Ohm | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BS170RLRAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-bs170rlra-datasheets-6328.pdf | 60V | 500mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 4.535924g | No SVHC | 5Ohm | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 10 ns | 10 ns | 500mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 0.5A | 60V | N-Channel | 60pF @ 10V | 2 V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF6648TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | 60V | 86A | DirectFET™ Isometric MN | Contains Lead | No SVHC | 7 | No | 2.8W | DIRECTFET™ MN | 2.12nF | 16 ns | 29ns | 13 ns | 28 ns | 86A | 20V | 60V | 60V | 4V | 2.8W Ta 89W Tc | 31 ns | 2MOhm | 60V | N-Channel | 2120pF @ 25V | 4 V | 7mOhm @ 17A, 10V | 4.9V @ 150μA | 86A Tc | 50nC @ 10V | 7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PHB152NQ03LTA,118 | NXP USA Inc. | $11.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb152nq03lta118-datasheets-7616.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 150W Tc | 75A | 240A | 0.005Ohm | 560 mJ | N-Channel | 3140pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 36nC @ 5V | 5V 10V | ±20V |
