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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Max Forward Surge Current (Ifsm) | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR5410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfu5410pbf-datasheets-2314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 9 Weeks | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7807Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807ztr-datasheets-6474.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e0 | TIN LEAD | YES | DUAL | GULL WING | 245 | 30 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 11A | 0.0138Ohm | N-Channel | 770pF @ 15V | 13.8m Ω @ 11A, 10V | 2.25V @ 250μA | 11A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr9120ntrpbf-datasheets-6833.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 40W Tc | TO-252AA | 6.6A | 26A | 0.48Ohm | 100 mJ | P-Channel | 350pF @ 25V | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 6.6A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFR3711ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711ztrpbf-datasheets-1493.pdf | 20V | 93A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | No | Single | 79W | 1 | D-Pak | 2.16nF | 12 ns | 13ns | 5.2 ns | 15 ns | 93A | 20V | 20V | 79W Tc | 5.7mOhm | 20V | N-Channel | 2160pF @ 10V | 5.7mOhm @ 15A, 10V | 2.45V @ 250μA | 93A Tc | 27nC @ 4.5V | 5.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711trpbf-datasheets-1707.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 2.5W Ta 120W Tc | N-Channel | 2980pF @ 10V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfu9024npbf-datasheets-9012.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 38W Tc | TO-252AA | 11A | 44A | 0.175Ohm | 62 mJ | P-Channel | 350pF @ 25V | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFL014NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfl014ntrpbf-datasheets-4955.pdf | TO-261-4, TO-261AA | 18 Weeks | EAR99 | 55V | 1W Ta | N-Channel | 190pF @ 25V | 160m Ω @ 1.9A, 10V | 4V @ 250μA | 1.9A Ta | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7833PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr7833trlpbf-datasheets-1586.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | TO-252AA | 30A | 560A | 0.0045Ohm | 530 mJ | N-Channel | 4010pF @ 15V | 4.5m Ω @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24NSTRRPBF | Infineon Technologies | $5.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz24nstrrpbf-datasheets-7326.pdf | 55V | 17A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.699mm | 9.65mm | Lead Free | 3 | No | Single | 45W | 1 | D2PAK | 370pF | 4.9 ns | 34ns | 27 ns | 19 ns | 17A | 20V | 55V | 3.8W Ta 45W Tc | 70mOhm | 55V | N-Channel | 370pF @ 25V | 70mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 70 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR13N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr13n20dtrpbf-datasheets-7573.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 110W Tc | TO-252AA | 13A | 52A | 0.235Ohm | 130 mJ | N-Channel | 830pF @ 25V | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 13A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR5305PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr5305trpbf-datasheets-3036.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 31A | 110A | 0.065Ohm | 280 mJ | P-Channel | 1200pF @ 25V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR4105ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr4105ztrpbf-datasheets-1035.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | 55V | 48W Tc | N-Channel | 740pF @ 25V | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 30A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5505PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfr5505trpbf-datasheets-2068.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 57W Tc | TO-252AA | 18A | 64A | 0.11Ohm | 150 mJ | P-Channel | 650pF @ 25V | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFR024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfu024npbf-datasheets-2557.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 45W Tc | TO-252AA | 17A | 68A | 0.075Ohm | 71 mJ | N-Channel | 370pF @ 25V | 75m Ω @ 10A, 10V | 4V @ 250μA | 17A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR5305TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr5305trpbf-datasheets-3036.pdf | -55V | -31A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.3886mm | 2.3876mm | 6.73mm | Lead Free | 2 | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 110W | 1 | Other Transistors | R-PSSO-G2 | 14 ns | 66ns | 63 ns | 39 ns | -31A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 110W Tc | TO-252AA | 0.065Ohm | 280 mJ | -55V | P-Channel | 1200pF @ 25V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFR3711ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711ztrpbf-datasheets-1493.pdf | 20V | 93A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.1976mm | 2.2606mm | 6.22mm | Lead Free | 2 | No SVHC | 5.7MOhm | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | Single | 79W | 1 | R-PSSO-G2 | 12 ns | 13ns | 5.2 ns | 15 ns | 93A | 20V | 20V | SILICON | DRAIN | SWITCHING | 79W Tc | TO-252AA | 28 ns | 20V | N-Channel | 2160pF @ 10V | 2 V | 5.7m Ω @ 15A, 10V | 2.45V @ 250μA | 93A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFR3704TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-944156pbf-datasheets-7077.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | 90W Tc | N-Channel | 1996pF @ 10V | 9.5m Ω @ 15A, 10V | 3V @ 250μA | 75A Tc | 19nC @ 4.5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2407PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr2407trpbf-datasheets-4163.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | 75V | 110W Tc | N-Channel | 2400pF @ 25V | 26m Ω @ 25A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR220NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr220ntrpbf-datasheets-9596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | 200V | 43W Tc | N-Channel | 300pF @ 25V | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 5A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704ZCS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 57W Tc | 42A | 260A | 0.0079Ohm | 36 mJ | N-Channel | 1220pF @ 10V | 7.9m Ω @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807VD2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807vd2pbf-datasheets-7176.pdf | 30V | 8.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 25MOhm | 8 | No | 2.5W | 1 | 8-SO | 3.7A | 540mV | 6.3 ns | 1.2ns | 2.2 ns | 1.1 ns | 8.3A | 20V | 30V | 30V | 1V | 2.5W Ta | 25mOhm | 30V | N-Channel | 1 V | 25mOhm @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 14nC @ 4.5V | Schottky Diode (Isolated) | 25 mΩ | 4.5V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR110TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr110trpbf-datasheets-0113.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 3 | No | 1 | Single | D-Pak | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | 100V | 2.5W Ta 25W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3303TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3303trpbf-datasheets-8180.pdf | 30V | 33A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 3 | No | Single | 57W | D-Pak | 750pF | 11 ns | 99ns | 28 ns | 16 ns | 33A | 20V | 30V | 57W Tc | 31mOhm | 30V | N-Channel | 750pF @ 25V | 31mOhm @ 18A, 10V | 4V @ 250μA | 33A Tc | 29nC @ 10V | 31 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3709ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irfr3709ztrrpbf-datasheets-4051.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 79W Tc | TO-252AA | 30A | 340A | 0.0065Ohm | 100 mJ | N-Channel | 2330pF @ 15V | 6.5m Ω @ 15A, 10V | 2.25V @ 250μA | 86A Tc | 26nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR4105PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr4105trpbf-datasheets-1009.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 68W Tc | TO-252AA | 20A | 100A | 0.045Ohm | 65 mJ | N-Channel | 700pF @ 25V | 45m Ω @ 16A, 10V | 4V @ 250μA | 27A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF9410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irf9410trpbf-datasheets-5585.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 7A | 37A | 0.03Ohm | 70 mJ | N-Channel | 550pF @ 25V | 30m Ω @ 7A, 10V | 1V @ 250μA | 7A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2405TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfu2405pbf-datasheets-7533.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55V | 110W Tc | N-Channel | 2430pF @ 25V | 16mOhm @ 34A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7450PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7450trpbf-datasheets-5056.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 2.5W Ta | MS-012AA | 2.5A | 20A | 0.17Ohm | 230 mJ | N-Channel | 940pF @ 25V | 170m Ω @ 1.5A, 10V | 5.5V @ 250μA | 2.5A Ta | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR120NTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr120ntrpbf-datasheets-8685.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 48W Tc | TO-252AA | 9.4A | 38A | 0.21Ohm | 91 mJ | N-Channel | 330pF @ 25V | 210m Ω @ 5.6A, 10V | 4V @ 250μA | 9.4A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7422D2PBF | Infineon Technologies | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7422d2pbf-datasheets-7128.pdf | -20V | -4.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 8 | EAR99 | No | Single | 2W | 1 | Other Transistors | 4A | 520mV | 8.1 ns | 26ns | 33 ns | 26 ns | -4.3A | 12V | -20V | 20V | 4V | 2W Ta | 20A | 4.6A | -20V | P-Channel | 610pF @ 15V | 4 V | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 4.3A Ta | 22nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V |
