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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFZ44NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz44nlpbf-datasheets-1585.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 94W Tc | 49A | 160A | 0.0175Ohm | 150 mJ | N-Channel | 1470pF @ 25V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR8103VPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr8103vtrpbf-datasheets-1867.pdf | 30V | 89A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | No SVHC | 9mOhm | 3 | EAR99 | Tin | No | Single | 89W | 1 | 10 ns | 9ns | 18 ns | 24 ns | 91A | 20V | 30V | 3V | 115W Tc | 30V | N-Channel | 2672pF @ 16V | 3 V | 9m Ω @ 15A, 10V | 3V @ 250μA | 91A Tc | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL1404ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 230W Tc | 75A | 790A | 0.0031Ohm | 220 mJ | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 75A Tc | 110nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL2705PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irll2705trpbf-datasheets-1660.pdf | TO-261-4, TO-261AA | 4 | 18 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 55V | 55V | 1W Ta | 5.2A | 30A | 0.051Ohm | 110 mJ | N-Channel | 870pF @ 25V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 3.8A Ta | 48nC @ 10V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7402PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7402trpbf-datasheets-7696.pdf | 20V | 6.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 35MOhm | 8 | No | 2.5W | 1 | 8-SO | 650pF | 5.1 ns | 47ns | 32 ns | 24 ns | 6.8A | 12V | 20V | 20V | 6.3 mm | 700mV | 2.5W Ta | 35mOhm | 20V | N-Channel | 650pF @ 15V | 700 mV | 35mOhm @ 4.1A, 4.5V | 700mV @ 250μA | 6.8A Ta | 22nC @ 4.5V | 35 mΩ | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| PH20100S,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-ph20100s115-datasheets-7515.pdf | SC-100, SOT-669 | 4 | 4 | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 34.3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 62.5W Tc | MO-235 | 0.023Ohm | 250 mJ | N-Channel | 2264pF @ 25V | 23m Ω @ 10A, 10V | 4V @ 1mA | 34.3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI4420DYPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-si4420dytrpbf-datasheets-2964.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 12.5A | 50A | 0.009Ohm | 400 mJ | N-Channel | 2240pF @ 15V | 9m Ω @ 12.5A, 10V | 1V @ 250μA | 12.5A Ta | 78nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr024ntrpbf-datasheets-9485.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | EAR99 | not_compliant | 55V | 45W Tc | N-Channel | 480pF @ 25V | 65m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4435DYPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-si4435dytrpbf-datasheets-3297.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 8A | 50A | 0.02Ohm | P-Channel | 2320pF @ 15V | 20m Ω @ 8A, 10V | 1V @ 250μA | 8A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLL024NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll024ntrpbf-datasheets-9763.pdf | TO-261-4, TO-261AA | EAR99 | 55V | 1W Ta | N-Channel | 510pF @ 25V | 65m Ω @ 3.1A, 10V | 2V @ 250μA | 3.1A Ta | 15.6nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlz44nstrlpbf-datasheets-4204.pdf | 55V | 47A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 3 | No | Single | 110W | 1 | D2PAK | 1.7nF | 11 ns | 84ns | 15 ns | 26 ns | 47A | 16V | 55V | 3.8W Ta 110W Tc | 35mOhm | 55V | N-Channel | 1700pF @ 25V | 22mOhm @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 22 mΩ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRLZ44ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 80W Tc | 51A | 204A | 0.0135Ohm | 78 mJ | N-Channel | 1620pF @ 25V | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 51A Tc | 36nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NSTRRPBF | Infineon Technologies | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | /files/infineontechnologies-irfz48nstrlpbf-datasheets-8663.pdf | 55V | 64A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | No | Single | 140W | 1 | D2PAK | 1.97nF | 12 ns | 78ns | 50 ns | 34 ns | 64A | 20V | 55V | 3.8W Ta 130W Tc | 55V | N-Channel | 1970pF @ 25V | 14mOhm @ 32A, 10V | 4V @ 250μA | 64A Tc | 81nC @ 10V | 14 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRL2203NSTRRPBF | Infineon Technologies | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl2203nstrlpbf-datasheets-4378.pdf | 30V | 116A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 170W | 1 | D2PAK | 3.29nF | 11 ns | 160ns | 66 ns | 23 ns | 116A | 16V | 30V | 3.8W Ta 180W Tc | 10mOhm | 30V | N-Channel | 3290pF @ 25V | 7mOhm @ 60A, 10V | 3V @ 250μA | 116A Tc | 60nC @ 4.5V | 7 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR7807ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr7807ztrpbf-datasheets-4921.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | 30V | 40W Tc | N-Channel | 780pF @ 15V | 13.8m Ω @ 15A, 10V | 2.25V @ 250μA | 43A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL3303PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll3303trpbf-datasheets-0880.pdf | TO-261-4, TO-261AA | 10 Weeks | EAR99 | 30V | 1W Ta | N-Channel | 840pF @ 25V | 31m Ω @ 4.6A, 10V | 1V @ 250μA | 4.6A Ta | 50nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3303TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3303trlpbf-datasheets-7381.pdf | 30V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | 57W | 1 | D-Pak | 870pF | 200ns | 35A | 16V | 30V | 68W Tc | 45mOhm | 30V | N-Channel | 870pF @ 25V | 31mOhm @ 21A, 10V | 1V @ 250μA | 35A Tc | 26nC @ 4.5V | 31 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3103PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlr3103trpbf-datasheets-6103.pdf | 30V | 55A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | No SVHC | 19mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 69W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 9 ns | 210ns | 54 ns | 20 ns | 55A | 16V | SILICON | DRAIN | SWITCHING | 107W Tc | TO-252AA | 78 ns | 20A | 220A | 240 mJ | 30V | N-Channel | 1600pF @ 25V | 1 V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||
| IRLR3715TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irlr3715trlpbf-datasheets-5800.pdf | 20V | 54A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | Single | 71W | 1 | D-Pak | 1.06nF | 73ns | 5.1 ns | 12 ns | 54A | 20V | 20V | 3.8W Ta 71W Tc | 14mOhm | 20V | N-Channel | 1060pF @ 10V | 14mOhm @ 26A, 10V | 3V @ 250μA | 54A Tc | 17nC @ 4.5V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3303PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3303trlpbf-datasheets-7381.pdf | 30V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 31mOhm | 3 | Single | 57W | 1 | D-Pak | 870pF | 200ns | 36 ns | 14 ns | 35A | 16V | 30V | 30V | 68W Tc | 110 ns | 45mOhm | 30V | N-Channel | 870pF @ 25V | 1 V | 31mOhm @ 21A, 10V | 1V @ 250μA | 35A Tc | 26nC @ 4.5V | 31 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR8103VTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr8103vtrpbf-datasheets-1867.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 115W Tc | N-Channel | 2672pF @ 16V | 9m Ω @ 15A, 10V | 3V @ 250μA | 91A Tc | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2905PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irlr2905trlpbf-datasheets-6372.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 20A | 160A | 0.03Ohm | 210 mJ | N-Channel | 1700pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR3704TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-944156pbf-datasheets-7077.pdf | 20V | 75A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | 90W | D-Pak | 1.996nF | 98ns | 75A | 20V | 20V | 90W Tc | 14mOhm | 20V | N-Channel | 1996pF @ 10V | 9.5mOhm @ 15A, 10V | 3V @ 250μA | 75A Tc | 19nC @ 4.5V | 9.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irfr3711trpbf-datasheets-1707.pdf | 20V | 110A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | No SVHC | 3 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 120W | 1 | R-PSSO-G2 | 12 ns | 220ns | 12 ns | 17 ns | 110A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 120W Tc | TO-252AA | 440A | 0.0065Ohm | 460 mJ | 20V | N-Channel | 2980pF @ 10V | 3 V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRLR3715ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irlr3715zpbf-datasheets-7431.pdf | 20V | 49A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Lead Free | 2 | No SVHC | 11MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.8 ns | 13ns | 4.3 ns | 10 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 2.1V | 40W Tc | TO-252AA | 17 ns | 200A | 20V | N-Channel | 810pF @ 10V | 11m Ω @ 15A, 10V | 2.55V @ 250μA | 49A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRLL110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irll110trpbf-datasheets-8859.pdf | 100V | 1.5A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 540mOhm | 3 | No | 1 | Single | 2W | 1 | 150°C | SOT-223 | 250pF | 9.3 ns | 47ns | 18 ns | 16 ns | 1.5A | 10V | 100V | 2V | 2W Ta 3.1W Tc | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 900mA, 5V | 2V @ 250μA | 1.5A Tc | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||
| IRFR13N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr13n20dtrpbf-datasheets-7573.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 110W Tc | TO-252AA | 13A | 52A | 0.235Ohm | 130 mJ | N-Channel | 830pF @ 25V | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 13A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR3103TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3103trpbf-datasheets-6103.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 107W Tc | TO-252AA | 20A | 220A | 0.019Ohm | 240 mJ | N-Channel | 1600pF @ 25V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR3714TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trlpbf-datasheets-7351.pdf | 20V | 36A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | Single | 47W | D-Pak | 670pF | 78ns | 4.5 ns | 10 ns | 36A | 20V | 20V | 47W Tc | 20mOhm | 20V | N-Channel | 670pF @ 10V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3714PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3714trlpbf-datasheets-7351.pdf | 20V | 36A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 20mOhm | 4 | Single | 47W | 1 | D-Pak | 670pF | 78ns | 4.5 ns | 10 ns | 36A | 20V | 20V | 20V | 3V | 47W Tc | 28mOhm | 20V | N-Channel | 670pF @ 10V | 3 V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V |
