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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MTP10N10ELG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-mtp10n10elg-datasheets-7705.pdf | 100V | 10A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 22 hours ago) | yes | EAR99 | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 40W | 1 | FET General Purpose Power | Not Qualified | 74ns | 38 ns | 17 ns | 10A | 15V | SILICON | DRAIN | SWITCHING | 1.75W Ta 40W Tc | TO-220AB | 0.22Ohm | 50 mJ | 100V | N-Channel | 1040pF @ 25V | 220m Ω @ 5A, 5V | 2V @ 250μA | 10A Tc | 15nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR2705PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr2705trpbf-datasheets-6642.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 68W Tc | TO-252AA | 28A | 110A | 0.051Ohm | 110 mJ | N-Channel | 880pF @ 25V | 40m Ω @ 17A, 10V | 2V @ 250μA | 28A Tc | 25nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| MTP50P03HDLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/onsemiconductor-mtp50p03hdl-datasheets-6315.pdf | -30V | -50A | TO-220-3 | 10.2616mm | 14.478mm | 4.826mm | Lead Free | 3 | 4.535924g | No SVHC | 25MOhm | 3 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | NO | 260 | 3 | Single | 40 | 125W | 1 | Other Transistors | 22 ns | 340ns | 218 ns | 90 ns | 50A | 15V | SILICON | DRAIN | SWITCHING | -1.5V | 125W Tc | TO-220AB | 30V | P-Channel | 4900pF @ 25V | 25m Ω @ 25A, 5V | 2V @ 250μA | 50A Tc | 100nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||
| MTP12P10G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtp12p10g-datasheets-7733.pdf | -100V | -12A | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | LEADFORM OPTIONS ARE AVAILABLE | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 75W | 1 | Other Transistors | Not Qualified | 150ns | 150 ns | 150 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 75W Tc | TO-220AB | 28A | 100V | P-Channel | 920pF @ 25V | 300m Ω @ 6A, 10V | 4.5V @ 1mA | 12A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLL014PBF | Vishay Siliconix | $17.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irll014trpbf-datasheets-2710.pdf | 60V | 2.7A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 200mOhm | 3 | 1 | Single | 2W | 1 | SOT-223 | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 2.7A | 10V | 60V | 2V | 2W Ta 3.1W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 1.6A, 5V | 2V @ 250μA | 2.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| NTD14N03R-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 27ns | 27 ns | 9.6 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 11.4A | 28A | 0.13Ohm | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BS170RLRAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-bs170rlra-datasheets-6328.pdf | 60V | 500mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 4.535924g | No SVHC | 5Ohm | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 10 ns | 10 ns | 500mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 0.5A | 60V | N-Channel | 60pF @ 10V | 2 V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF6648TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | 60V | 86A | DirectFET™ Isometric MN | Contains Lead | No SVHC | 7 | No | 2.8W | DIRECTFET™ MN | 2.12nF | 16 ns | 29ns | 13 ns | 28 ns | 86A | 20V | 60V | 60V | 4V | 2.8W Ta 89W Tc | 31 ns | 2MOhm | 60V | N-Channel | 2120pF @ 25V | 4 V | 7mOhm @ 17A, 10V | 4.9V @ 150μA | 86A Tc | 50nC @ 10V | 7 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PHB152NQ03LTA,118 | NXP USA Inc. | $11.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb152nq03lta118-datasheets-7616.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 150W Tc | 75A | 240A | 0.005Ohm | 560 mJ | N-Channel | 3140pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 36nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlr120ntrpbf-datasheets-1519.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 39 Weeks | EAR99 | 100V | 48W Tc | N-Channel | 440pF @ 25V | 185m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf7807d1pbf-datasheets-7682.pdf | 30V | 8.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 25MOhm | 8 | EAR99 | No | Single | 2.5W | 1 | FET General Purpose Power | 3.5A | 500mV | 8.3A | 12V | 30V | 1V | 2.5W Ta | 30V | N-Channel | 1 V | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | Schottky Diode (Isolated) | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8503TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 62W Tc | N-Channel | 1650pF @ 25V | 16mOhm @ 15A, 10V | 3V @ 250μA | 44A Tc | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTW32N20EG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtw32n20e-datasheets-6336.pdf | 200V | 32A | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Lead Free | 3 | No SVHC | 75MOhm | 3 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 180W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 120ns | 91 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AE | 200V | N-Channel | 5000pF @ 25V | 4 V | 75m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TPCF8104(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | 2.5W | 2.8ns | 22 ns | 6A | 20V | 30V | 700mW Ta | -30V | P-Channel | 1760pF @ 10V | 28m Ω @ 3A, 10V | 2V @ 1mA | 6A Ta | 34nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl540nstrlpbf-datasheets-4114.pdf | 100V | 36A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 11 ns | 81ns | 62 ns | 39 ns | 36A | 16V | DRAIN | SWITCHING | 3.8W Ta 140W Tc | 100V | N-Channel | 1800pF @ 25V | 44m Ω @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR3715ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3715zpbf-datasheets-7431.pdf | 20V | 49A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.38mm | 6.22mm | Lead Free | 3 | No | Single | 40W | 1 | D-Pak | 810pF | 7.8 ns | 13ns | 4.3 ns | 10 ns | 49A | 20V | 20V | 40W Tc | 11mOhm | 20V | N-Channel | 810pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 49A Tc | 11nC @ 4.5V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8113PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irlr8113pbf-datasheets-7610.pdf | 30V | 94A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | No SVHC | 6MOhm | 3 | No | Single | 89W | 1 | D-Pak | 2.92nF | 9.2 ns | 3.8ns | 10 ns | 15 ns | 94A | 20V | 30V | 2.25V | 89W Tc | 49 ns | 7.4mOhm | 30V | N-Channel | 2920pF @ 15V | 6mOhm @ 15A, 10V | 2.25V @ 250μA | 94A Tc | 32nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PHB38N02LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb38n02lt118-datasheets-7626.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 57.6W Tc | 44.7A | 179A | 0.016Ohm | N-Channel | 800pF @ 20V | 16m Ω @ 25A, 5V | 1.5V @ 250μA | 44.7A Tc | 15.1nC @ 5V | 2.5V 5V | 12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHB129NQ04LT,118 | NXP USA Inc. | $5.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb129nq04lt118-datasheets-7627.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 200W Tc | N-Channel | 3965pF @ 25V | 5mOhm @ 25A, 10V | 2V @ 1mA | 75A Tc | 44.2nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL014NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll014ntrpbf-datasheets-8374.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED, FAST SWITCHING | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 2.8A | 16A | 0.14Ohm | 32 mJ | N-Channel | 230pF @ 25V | 140m Ω @ 2A, 10V | 2V @ 250μA | 2A Ta | 14nC @ 10V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PHB174NQ04LT,118 | NXP USA Inc. | $10.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb174nq04lt118-datasheets-7625.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 250W Tc | N-Channel | 5345pF @ 25V | 4mOhm @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr3910trpbf-datasheets-0641.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-252AA | 16A | 60A | 0.115Ohm | 150 mJ | N-Channel | 640pF @ 25V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PH4840S,115 | Nexperia USA Inc. | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nexperiausainc-ph4840s115-datasheets-7617.pdf | SC-100, SOT-669 | Lead Free | 4 | 4 | EAR99 | No | e3 | TIN | YES | SINGLE | GULL WING | 4 | 62.5W | 1 | 21 ns | 35ns | 31 ns | 82 ns | 94.5A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | MO-235 | 283A | 250 mJ | 40V | N-Channel | 3660pF @ 10V | 4.1m Ω @ 25A, 10V | 3V @ 1mA | 94.5A Tc | 67nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7464PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7464pbf-datasheets-7661.pdf | 200V | 1.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2.5W | 1 | 8-SO | 280pF | 9.5ns | 15 ns | 18 ns | 1.2A | 30V | 200V | 200V | 5.5V | 2.5W Ta | 730mOhm | 200V | N-Channel | 280pF @ 25V | 5.5 V | 730mOhm @ 720mA, 10V | 5.5V @ 250μA | 1.2A Ta | 14nC @ 10V | 730 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH50P085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p085-datasheets-7665.pdf | -85V | -50A | TO-247-3 | Lead Free | 3 | 8 Weeks | 55MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | 3 | Single | 300W | 1 | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 85V | 300W Tc | TO-247AD | 200A | -85V | P-Channel | 4200pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlz44nstrlpbf-datasheets-4204.pdf | 55V | 47A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 3 | No | Single | 110W | 1 | D2PAK | 1.7nF | 11 ns | 84ns | 15 ns | 26 ns | 47A | 16V | 55V | 3.8W Ta 110W Tc | 35mOhm | 55V | N-Channel | 1700pF @ 25V | 22mOhm @ 25A, 10V | 2V @ 250μA | 47A Tc | 48nC @ 5V | 22 mΩ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8503PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 30V | 44A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | No SVHC | 16mOhm | 3 | 62W | 1 | D-Pak | 1.65nF | 18ns | 44A | 20V | 30V | 30V | 1V | 62W Tc | 30V | N-Channel | 1650pF @ 25V | 1 V | 16mOhm @ 15A, 10V | 3V @ 250μA | 44A Tc | 20nC @ 5V | 16 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4410DYPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-si4410dytrpbf-datasheets-1763.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 10A | 50A | 0.0135Ohm | 400 mJ | N-Channel | 1585pF @ 15V | 13.5m Ω @ 10A, 10V | 1V @ 250μA | 10A Ta | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ377(TE16R1,NQ) | Toshiba Semiconductor and Storage | $9.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-2sj377te16r1nq-datasheets-7576.pdf | -60V | -5A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | No | 20W | 1 | PW-MOLD | 630pF | 25ns | 5A | 60V | 20W Tc | P-Channel | 630pF @ 10V | 190mOhm @ 2.5A, 10V | 2V @ 1mA | 5A Ta | 22nC @ 10V | 190 mΩ | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR2703PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-irlr2703trpbf-datasheets-1386.pdf | 30V | 23A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | No SVHC | 45mOhm | 3 | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 38W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.5 ns | 140ns | 20 ns | 12 ns | 23A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 45W Tc | TO-252AA | 97 ns | 96A | 77 mJ | 30V | N-Channel | 450pF @ 25V | 1 V | 45m Ω @ 14A, 10V | 1V @ 250μA | 23A Tc | 15nC @ 4.5V | 4V 10V | ±16V |
