Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Current | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRLL014PBF | Vishay Siliconix | $17.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irll014trpbf-datasheets-2710.pdf | 60V | 2.7A | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 200mOhm | 3 | 1 | Single | 2W | 1 | SOT-223 | 400pF | 9.3 ns | 110ns | 26 ns | 17 ns | 2.7A | 10V | 60V | 2V | 2W Ta 3.1W Tc | 200mOhm | 60V | N-Channel | 400pF @ 25V | 200mOhm @ 1.6A, 5V | 2V @ 250μA | 2.7A Tc | 8.4nC @ 5V | 200 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| NTD14N03R-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 8541.29.00.95 | e3 | Tin (Sn) | 260 | 3 | Single | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 27ns | 27 ns | 9.6 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 11.4A | 28A | 0.13Ohm | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BS170RLRAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-bs170rlra-datasheets-6328.pdf | 60V | 500mA | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 4.535924g | No SVHC | 5Ohm | 3 | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | BOTTOM | 260 | 3 | Single | 40 | 350mW | 1 | FET General Purpose Power | 10 ns | 10 ns | 500mA | 20V | SILICON | SWITCHING | 2V | 350mW Ta | 0.5A | 60V | N-Channel | 60pF @ 10V | 2 V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 500mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF6648TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | 60V | 86A | DirectFET™ Isometric MN | Contains Lead | No SVHC | 7 | No | 2.8W | DIRECTFET™ MN | 2.12nF | 16 ns | 29ns | 13 ns | 28 ns | 86A | 20V | 60V | 60V | 4V | 2.8W Ta 89W Tc | 31 ns | 2MOhm | 60V | N-Channel | 2120pF @ 25V | 4 V | 7mOhm @ 17A, 10V | 4.9V @ 150μA | 86A Tc | 50nC @ 10V | 7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PHB152NQ03LTA,118 | NXP USA Inc. | $11.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb152nq03lta118-datasheets-7616.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 150W Tc | 75A | 240A | 0.005Ohm | 560 mJ | N-Channel | 3140pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 36nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTB75N03RG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp75n03r-datasheets-6626.pdf | 25V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | NOT SPECIFIED | 74.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18.4 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 1.25W Ta 74.4W Tc | 9.7A | 225A | 0.013Ohm | 71.7 mJ | 25V | N-Channel | 1333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 9.7A Ta 75A Tc | 13.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTB65N02RT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp65n02r-datasheets-6613.pdf | 24V | 65A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | LAST SHIPMENTS (Last Updated: 6 days ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | 260 | 3 | Single | 40 | 1.86W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 53ns | 10 ns | 14 ns | 7.6A | 20V | SILICON | DRAIN | SWITCHING | 25V | 1.04W Ta 62.5W Tc | 160A | 0.0105Ohm | 60 mJ | 24V | N-Channel | 1330pF @ 20V | 8.2m Ω @ 30A, 10V | 2V @ 250μA | 7.6A Tc | 9.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD40N03R-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/onsemiconductor-ntd40n03r1g-datasheets-7752.pdf | 25V | 40A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | Unknown | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 2.1W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 19.5ns | 3.5 ns | 16.7 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 1.5W Ta 50W Tc | 32A | 0.023Ohm | 25V | N-Channel | 584pF @ 20V | 16.5m Ω @ 10A, 10V | 2V @ 250μA | 7.8A Ta 32A Tc | 5.78nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| MTP2P50EG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/onsemiconductor-mtp2p50e-datasheets-6656.pdf | -500V | -2A | TO-220-3 | 10.28mm | 9.28mm | 4.82mm | Lead Free | 3 | 4.535924g | No SVHC | 6Ohm | 3 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | HIGH VOLTAGE | No | e3 | Tin (Sn) | NO | 260 | 3 | Single | 40 | 75W | 1 | Other Transistors | 12 ns | 14ns | 19 ns | 21 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | -3V | 75W Tc | TO-220AB | 2A | 6A | 80 mJ | 500V | P-Channel | 1183pF @ 25V | 3 V | 6 Ω @ 1A, 10V | 4V @ 250μA | 2A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRLR3715ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3715zpbf-datasheets-7431.pdf | 20V | 49A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.38mm | 6.22mm | Lead Free | 3 | No | Single | 40W | 1 | D-Pak | 810pF | 7.8 ns | 13ns | 4.3 ns | 10 ns | 49A | 20V | 20V | 40W Tc | 11mOhm | 20V | N-Channel | 810pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 49A Tc | 11nC @ 4.5V | 11 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8113PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irlr8113pbf-datasheets-7610.pdf | 30V | 94A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | No SVHC | 6MOhm | 3 | No | Single | 89W | 1 | D-Pak | 2.92nF | 9.2 ns | 3.8ns | 10 ns | 15 ns | 94A | 20V | 30V | 2.25V | 89W Tc | 49 ns | 7.4mOhm | 30V | N-Channel | 2920pF @ 15V | 6mOhm @ 15A, 10V | 2.25V @ 250μA | 94A Tc | 32nC @ 4.5V | 6 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PHB38N02LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb38n02lt118-datasheets-7626.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 57.6W Tc | 44.7A | 179A | 0.016Ohm | N-Channel | 800pF @ 20V | 16m Ω @ 25A, 5V | 1.5V @ 250μA | 44.7A Tc | 15.1nC @ 5V | 2.5V 5V | 12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHB129NQ04LT,118 | NXP USA Inc. | $5.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb129nq04lt118-datasheets-7627.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 200W Tc | N-Channel | 3965pF @ 25V | 5mOhm @ 25A, 10V | 2V @ 1mA | 75A Tc | 44.2nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL014NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irll014ntrpbf-datasheets-8374.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED, FAST SWITCHING | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1W Ta | 2.8A | 16A | 0.14Ohm | 32 mJ | N-Channel | 230pF @ 25V | 140m Ω @ 2A, 10V | 2V @ 250μA | 2A Ta | 14nC @ 10V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PHB174NQ04LT,118 | NXP USA Inc. | $10.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb174nq04lt118-datasheets-7625.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 40V | 250W Tc | N-Channel | 5345pF @ 25V | 4mOhm @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3910PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr3910trpbf-datasheets-0641.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-252AA | 16A | 60A | 0.115Ohm | 150 mJ | N-Channel | 640pF @ 25V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PH4840S,115 | Nexperia USA Inc. | $2.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nexperiausainc-ph4840s115-datasheets-7617.pdf | SC-100, SOT-669 | Lead Free | 4 | 4 | EAR99 | No | e3 | TIN | YES | SINGLE | GULL WING | 4 | 62.5W | 1 | 21 ns | 35ns | 31 ns | 82 ns | 94.5A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | MO-235 | 283A | 250 mJ | 40V | N-Channel | 3660pF @ 10V | 4.1m Ω @ 25A, 10V | 3V @ 1mA | 94.5A Tc | 67nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7464PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf7464pbf-datasheets-7661.pdf | 200V | 1.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | No SVHC | 8 | 2.5W | 1 | 8-SO | 280pF | 9.5ns | 15 ns | 18 ns | 1.2A | 30V | 200V | 200V | 5.5V | 2.5W Ta | 730mOhm | 200V | N-Channel | 280pF @ 25V | 5.5 V | 730mOhm @ 720mA, 10V | 5.5V @ 250μA | 1.2A Ta | 14nC @ 10V | 730 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH50P085 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixth50p085-datasheets-7665.pdf | -85V | -50A | TO-247-3 | Lead Free | 3 | 8 Weeks | 55MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | 3 | Single | 300W | 1 | 39ns | 38 ns | 86 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 85V | 300W Tc | TO-247AD | 200A | -85V | P-Channel | 4200pF @ 25V | 55m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR120NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlr120ntrpbf-datasheets-1519.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 39 Weeks | EAR99 | 100V | 48W Tc | N-Channel | 440pF @ 25V | 185m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7807D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf7807d1pbf-datasheets-7682.pdf | 30V | 8.3A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 25MOhm | 8 | EAR99 | No | Single | 2.5W | 1 | FET General Purpose Power | 3.5A | 500mV | 8.3A | 12V | 30V | 1V | 2.5W Ta | 30V | N-Channel | 1 V | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | Schottky Diode (Isolated) | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8503TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 30V | 62W Tc | N-Channel | 1650pF @ 25V | 16mOhm @ 15A, 10V | 3V @ 250μA | 44A Tc | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTW32N20EG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mtw32n20e-datasheets-6336.pdf | 200V | 32A | TO-247-3 | 15.9mm | 20.3mm | 5.3mm | Lead Free | 3 | No SVHC | 75MOhm | 3 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | 260 | 3 | Single | 40 | 180W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 120ns | 91 ns | 75 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-247AE | 200V | N-Channel | 5000pF @ 25V | 4 V | 75m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPCF8104(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SMD, Flat Lead | 8 | No | 2.5W | 2.8ns | 22 ns | 6A | 20V | 30V | 700mW Ta | -30V | P-Channel | 1760pF @ 10V | 28m Ω @ 3A, 10V | 2V @ 1mA | 6A Ta | 34nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL540NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl540nstrlpbf-datasheets-4114.pdf | 100V | 36A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 11 ns | 81ns | 62 ns | 39 ns | 36A | 16V | DRAIN | SWITCHING | 3.8W Ta 140W Tc | 100V | N-Channel | 1800pF @ 25V | 44m Ω @ 18A, 10V | 2V @ 250μA | 36A Tc | 74nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| IRFZ44NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfz44nlpbf-datasheets-1585.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 94W Tc | 49A | 160A | 0.0175Ohm | 150 mJ | N-Channel | 1470pF @ 25V | 17.5m Ω @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8103VPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr8103vtrpbf-datasheets-1867.pdf | 30V | 89A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | No SVHC | 9mOhm | 3 | EAR99 | Tin | No | Single | 89W | 1 | 10 ns | 9ns | 18 ns | 24 ns | 91A | 20V | 30V | 3V | 115W Tc | 30V | N-Channel | 2672pF @ 16V | 3 V | 9m Ω @ 15A, 10V | 3V @ 250μA | 91A Tc | 27nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1404ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 230W Tc | 75A | 790A | 0.0031Ohm | 220 mJ | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 75A Tc | 110nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL2705PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irll2705trpbf-datasheets-1660.pdf | TO-261-4, TO-261AA | 4 | 18 Weeks | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 55V | 55V | 1W Ta | 5.2A | 30A | 0.051Ohm | 110 mJ | N-Channel | 870pF @ 25V | 40m Ω @ 3.8A, 10V | 2V @ 250μA | 3.8A Ta | 48nC @ 10V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7402PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7402trpbf-datasheets-7696.pdf | 20V | 6.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | No SVHC | 35MOhm | 8 | No | 2.5W | 1 | 8-SO | 650pF | 5.1 ns | 47ns | 32 ns | 24 ns | 6.8A | 12V | 20V | 20V | 6.3 mm | 700mV | 2.5W Ta | 35mOhm | 20V | N-Channel | 650pF @ 15V | 700 mV | 35mOhm @ 4.1A, 4.5V | 700mV @ 250μA | 6.8A Ta | 22nC @ 4.5V | 35 mΩ | 2.7V 4.5V | ±12V |
