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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP20N65X2 | IXYS | $4.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 | 15 Weeks | compliant | 650V | 290W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302N15N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n15n3x1sa1-datasheets-9447.pdf | Die | Lead Free | 18 Weeks | EAR99 | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 150V | 150V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 270μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg22n50de3-datasheets-1811.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 312W | 1 | 21 ns | 42ns | 40 ns | 47 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 3V | 312W Tc | TO-247AC | 67A | N-Channel | 1938pF @ 100V | 230m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPW65R150CFDFKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r150cfdatma1-datasheets-9715.pdf | TO-247-3 | 18 Weeks | 650V | 195.3W Tc | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK16G60W,RVQ | Toshiba Semiconductor and Storage | $2.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | Single | D2PAK | 1.35nF | 25ns | 5 ns | 100 ns | 15.8A | 30V | 600V | 130W Tc | 190mOhm | N-Channel | 1350pF @ 300V | 190mOhm @ 7.9A, 10V | 3.7V @ 790μA | 15.8A Ta | 38nC @ 10V | Super Junction | 190 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB200N4F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp200n4f3-datasheets-9278.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | No SVHC | 3 | yes | EAR99 | GULL WING | NOT SPECIFIED | STB200N | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 180ns | 65 ns | 90 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 480A | 0.004Ohm | 862 mJ | 40V | N-Channel | 5100pF @ 25V | 4 V | 4m Ω @ 80A, 10V | 4V @ 250μA | 120A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFP14N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfp14n60p-datasheets-9452.pdf | 600V | 14A | TO-220-3 | Lead Free | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 2.5mA | 14A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTA110N055P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp110n055p-datasheets-9421.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9.9mm | 4.5mm | 9.2mm | 2 | 8 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 390W | 1 | Not Qualified | R-PSSO-G2 | 27 ns | 53ns | 45 ns | 66 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 80 ns | 250A | 1000 mJ | 55V | N-Channel | 2210pF @ 25V | 13.5m Ω @ 500mA, 10V | 5.5V @ 250μA | 110A Tc | 76nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP120N10S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi120n10s403aksa1-datasheets-9425.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20 ns | 10ns | 40 ns | 45 ns | 120A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | TO-220AB | 480A | N-Channel | 10120pF @ 25V | 3.9m Ω @ 100A, 10V | 3.5V @ 180μA | 120A Tc | 140nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTA42N25P | IXYS | $6.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp42n25p-datasheets-9418.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 28ns | 30 ns | 81 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 110A | 0.084Ohm | 1000 mJ | 250V | N-Channel | 2300pF @ 25V | 84m Ω @ 500mA, 10V | 5.5V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRF1324STRL7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1324strl7p-datasheets-9462.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 340A | 24V | 300W Tc | N-Channel | 7590pF @ 24V | 1.65m Ω @ 195A, 10V | 4V @ 250μA | 340A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP110N055P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp110n055p-datasheets-9421.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 390W | 1 | Not Qualified | 27 ns | 53ns | 45 ns | 66 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | TO-220AB | 250A | 1000 mJ | 55V | N-Channel | 2210pF @ 25V | 13.5m Ω @ 500mA, 10V | 5.5V @ 250μA | 110A Tc | 76nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFA130N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfa130n10t-datasheets-9422.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 360W Tc | 350A | 0.0091Ohm | 750 mJ | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 1mA | 130A Tc | 104nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||
| IXTP1N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarVHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp1n120p-datasheets-9423.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | 28ns | 27 ns | 54 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 63W Tc | TO-220AB | 1A | 1.8A | 100 mJ | 1.2kV | N-Channel | 550pF @ 25V | 20 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 17.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA380N036T4-7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT4™ | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixta380n036t47-datasheets-9424.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 24 Weeks | compliant | 36V | 480W Tc | N-Channel | 13400pF @ 25V | 1m Ω @ 100A, 10V | 4V @ 250μA | 380A Tc | 260nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI120N10S403AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi120n10s403aksa1-datasheets-9425.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 20 ns | 10ns | 40 ns | 45 ns | 120A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 250W Tc | 480A | N-Channel | 10120pF @ 25V | 3.9m Ω @ 100A, 10V | 3.5V @ 180μA | 120A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FCH099N65S3-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | 2016 | /files/onsemiconductor-fch099n65s3f155-datasheets-9431.pdf | TO-247-3 | 12 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 227W Tc | N-Channel | 2480pF @ 400V | 99m Ω @ 15A, 10V | 4.5V @ 3mA | 30A Tc | 61nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP62N15P | IXYS | $16.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta62n15p-datasheets-5532.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | Not Qualified | 27 ns | 38ns | 35 ns | 76 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 350W Tc | TO-220AB | 150A | 0.04Ohm | 1000 mJ | 150V | N-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 62A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA102N15T | IXYS | $4.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta102n15t-datasheets-9411.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | 300A | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTA16N50P | IXYS | $27.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IPT012N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipt012n06natma1-datasheets-9414.pdf | 8-PowerSFN | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | FLAT | 1 | R-PSSO-F2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 214W Tc | 41A | 960A | 0.0012Ohm | 420 mJ | N-Channel | 9750pF @ 30V | 1.2m Ω @ 100A, 10V | 3.3V @ 143μA | 240A Tc | 124nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA14N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixta14n60p-datasheets-9417.pdf | 600V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 300W Tc | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTP42N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixtp42n25p-datasheets-9418.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | No SVHC | 84MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 28ns | 30 ns | 81 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-220AB | 110A | 1000 mJ | 250V | N-Channel | 2300pF @ 25V | 84m Ω @ 500mA, 10V | 5.5V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA05N100 | IXYS | $1.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta05n100hv-datasheets-3022.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 19ns | 28 ns | 40 ns | 750mA | 30V | SILICON | DRAIN | SWITCHING | 1000V | 40W Tc | 0.75A | 3A | 100 mJ | 1kV | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 250μA | 750mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXFA20N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfq20n50p3-datasheets-3225.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 4 | 1 | FET General Purpose Power | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 380W Tc | 40A | 0.3Ohm | 300 mJ | N-Channel | 1800pF @ 25V | 300m Ω @ 10A, 10V | 5V @ 1.5mA | 20A Tc | 36nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| STL9N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl9n3llh5-datasheets-5527.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | STL9 | 8 | 30 | 50W | 1 | FET General Purpose Power | S-XDSO-N5 | 4 ns | 4.2ns | 3.5 ns | 21 ns | 9A | 22V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2W Ta 50W Tc | 9A | 36A | 0.022Ohm | N-Channel | 724pF @ 25V | 19m Ω @ 4.5A, 10V | 2.5V @ 250μA | 9A Tc | 5nC @ 4.5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||
| STD78N75F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp78n75f4-datasheets-4616.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | EAR99 | No | SINGLE | GULL WING | STD78N | 3 | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 33ns | 14 ns | 61 ns | 70A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 75V | 125W Tc | 280A | 0.011Ohm | 185 mJ | N-Channel | 5015pF @ 25V | 11m Ω @ 35A, 10V | 4V @ 250μA | 78A Tc | 76nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP95N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 4.7MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | STP95 | 3 | Single | 70W | 1 | FET General Purpose Power | 19 ns | 91ns | 23.4 ns | 24.5 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1V | 70W Tc | TO-220AB | 150 mJ | 30V | N-Channel | 2200pF @ 25V | 4.7m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 20nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP56N15T | IXYS | $0.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp56n15t-datasheets-9402.pdf | TO-220-3 | 3 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 56A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | TO-220AB | 140A | 500 mJ | N-Channel | 2250pF @ 25V | 36m Ω @ 28A, 10V | 4.5V @ 250μA | 56A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STW12NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf12nk60z-datasheets-3366.pdf | TO-247-3 | 3 | not_compliant | e3 | Tin (Sn) | STW12N | FET General Purpose Power | 10A | Single | 600V | 150W Tc | N-Channel | 1740pF @ 25V | 640m Ω @ 5A, 10V | 4.5V @ 100μA | 10A Tc | 59nC @ 10V | 10V | ±30V |
