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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FCH099N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch099n60e-datasheets-2690.pdf | TO-247-3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 24 ns | 23ns | 22 ns | 92 ns | 37A | 20V | 600V | 357W Tc | N-Channel | 3465pF @ 380V | 99m Ω @ 18.5A, 10V | 3.5V @ 250μA | 37A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB65R110CFDATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r110cfdatma2-datasheets-9662.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 277.8W Tc | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA90R340C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa90r340c3xksa2-datasheets-9605.pdf | TO-220-3 Full Pack | 18 Weeks | 900V | 35W Tc | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA220N06T3 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiperFET™, TrenchT3™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfh220n06t3-datasheets-1345.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | yes | 220A | 60V | 440W Tc | N-Channel | 8500pF @ 25V | 4m Ω @ 100A, 10V | 4V @ 250μA | 220A Tc | 136nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMTS0D4N04CLTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d4n04cltxg-datasheets-9581.pdf | 8-PowerTDFN | 33 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 5W Ta 244W Tc | N-Channel | 20600pF @ 20V | 400μ Ω @ 50A, 10V | 2.5V @ 250μA | 79.8A Ta 553.8A Tc | 341nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R340C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r340c3xksa2-datasheets-9607.pdf | TO-220-3 | 18 Weeks | 900V | 208W Tc | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF5N52U | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFASTmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std5n52u-datasheets-7149.pdf | TO-220-3 Full Pack | 3 | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF5N | 3 | 25W | 1 | FET General Purpose Power | 11.4 ns | 13.6ns | 15 ns | 23.1 ns | 4.4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 525V | 525V | 25W Tc | TO-220AB | N-Channel | 529pF @ 25V | 1.5 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4.4A Tc | 16.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTA1N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarVHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1n120p-datasheets-9423.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28ns | 27 ns | 54 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 63W Tc | 1A | 1.8A | 100 mJ | 1.2kV | N-Channel | 550pF @ 25V | 20 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 17.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| TK18A50D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshiba-tk18a50dsta4qm-datasheets-2651.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 2.6nF | 50ns | 25 ns | 18A | 30V | 500V | 50W Tc | N-Channel | 2600pF @ 25V | 270mOhm @ 9A, 10V | 4V @ 1mA | 18A Ta | 45nC @ 10V | 270 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH104N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fch104n60-datasheets-9585.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 26 ns | 18ns | 3.3 ns | 72 ns | 37A | 30V | SILICON | SWITCHING | 600V | 600V | 357W Tc | TO-247AB | 809 mJ | N-Channel | 4165pF @ 380V | 104m Ω @ 18.5A, 10V | 3.5V @ 250μA | 37A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFP18N65X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp24n65efge3-datasheets-9591.pdf | TO-220-3 | 3 | 22 Weeks | 6.000006g | Unknown | 3 | yes | No | 1 | Single | 1 | 24 ns | 34ns | 46 ns | 80 ns | 24A | 20V | SILICON | SWITCHING | 650V | 650V | 250W Tc | TO-220AB | 65A | N-Channel | 2656pF @ 100V | 156m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| R6018ANJTL | ROHM Semiconductor | $6.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 3 | No | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 37 ns | 85ns | 65 ns | 155 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100W Tc | 72A | 0.27Ohm | 600V | N-Channel | 2050pF @ 25V | 270m Ω @ 9A, 10V | 4.5V @ 1mA | 18A Ta | 55nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXFA180N10T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 100V | 480W Tc | N-Channel | 10500pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 250μA | 180A Tc | 185nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ60N20T | IXYS | $2.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtq60n20t-datasheets-2657.pdf | TO-3P-3, SC-65-3 | 3 | 26 Weeks | EAR99 | AVALANCHE RATED | NO | SINGLE | 3 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 500W Ta | 60A | 150A | 0.04Ohm | 700 mJ | N-Channel | 4530pF @ 25V | 40m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 73nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPI90R340C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi90r340c3xksa1-datasheets-9598.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 8 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 900V | 900V | 208W Tc | 15A | 34A | 0.34Ohm | 678 mJ | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTA3N110-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1100V | 150W Tc | N-Channel | 1300pF @ 25V | 4 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY02N50D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/ixys-ixty02n50dtrl-datasheets-8387.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | EAR99 | unknown | 8541.29.00.95 | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.1W | 1 | Not Qualified | R-PSSO-G2 | 4ns | 4 ns | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 1.1W Ta 25W Tc | TO-252AA | 0.2A | 0.8A | 500V | N-Channel | 120pF @ 25V | 30 Ω @ 50mA, 0V | 200mA Tc | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFA230N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 75V | 480W Tc | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 1mA | 230A Tc | 178nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI90R340C3XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi90r340c3xksa2-datasheets-9604.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 18 Weeks | 900V | 208W Tc | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4H01NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs4h01nft3g-datasheets-9579.pdf | 8-PowerTDFN | Lead Free | 8 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 334A | Single | 25V | 3.2W Ta 125W Tc | N-Channel | 5538pF @ 12V | 0.7m Ω @ 30A, 10V | 2.1V @ 250μA | 54A Ta 334A Tc | 82nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75645S3S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-hufa75645s3s-datasheets-9510.pdf | 100V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 117ns | 97 ns | 41 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 310W Tc | 100V | N-Channel | 3790pF @ 25V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA120P065T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 65V | 298W Tc | P-Channel | 13200pF @ 25V | 10m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMTS0D7N06CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d7n06ctxg-datasheets-9542.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 5W Ta 294.6W Tc | N-Channel | 11535pF @ 30V | 720μ Ω @ 50A, 10V | 4V @ 250μA | 60.5A Ta 464A Tc | 152nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU75N3LLH6-S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp75n3llh6-datasheets-5297.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STU75N | 3 | 1 | FET General Purpose Power | 9.5 ns | 30ns | 12 ns | 37 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 60W Tc | 0.0084Ohm | N-Channel | 1690pF @ 25V | 5.9m Ω @ 37.5A, 10V | 2.5V @ 250μA | 75A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPB80R290C3AATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80r290c3aatma2-datasheets-9544.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 800V | 227W Tc | N-Channel | 2300pF @ 100V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 117nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA2N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80-datasheets-9546.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 54W | 1 | Not Qualified | R-PSSO-G2 | 18ns | 15 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 54W Tc | 2A | 8A | 200 mJ | 800V | N-Channel | 440pF @ 25V | 6.2 Ω @ 500mA, 10V | 5.5V @ 250μA | 2A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP36N30P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa36n30p3-datasheets-6952.pdf | TO-220-3 | 26 Weeks | 36A | 300V | 347W Tc | N-Channel | 2040pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0150N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdbl0150n60-datasheets-9439.pdf | 8-PowerSFN | 8 | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | FLAT | 245 | Single | NOT SPECIFIED | 1 | 240A | SILICON | DRAIN | SWITCHING | 60V | 60V | 357W Tj | MO-299A | 0.0015Ohm | 614 mJ | N-Channel | 10300pF @ 30V | 1.5m Ω @ 80A, 10V | 4V @ 250μA | 240A Tc | 169nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| PSMN4R3-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn4r380ps127-datasheets-9552.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 306W | 1 | 38 ns | 29ns | 33 ns | 94 ns | 120A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 306W Tc | TO-220AB | 676 mJ | 80V | N-Channel | 8161pF @ 40V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 111nC @ 10V | 10V | ±20V |
