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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| HUFA75645S3S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-hufa75645s3s-datasheets-9510.pdf | 100V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 117ns | 97 ns | 41 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 310W Tc | 100V | N-Channel | 3790pF @ 25V | 14m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 238nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTA120P065T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 65V | 298W Tc | P-Channel | 13200pF @ 25V | 10m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 185nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMTS0D7N06CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d7n06ctxg-datasheets-9542.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 5W Ta 294.6W Tc | N-Channel | 11535pF @ 30V | 720μ Ω @ 50A, 10V | 4V @ 250μA | 60.5A Ta 464A Tc | 152nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU75N3LLH6-S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp75n3llh6-datasheets-5297.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STU75N | 3 | 1 | FET General Purpose Power | 9.5 ns | 30ns | 12 ns | 37 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 60W Tc | 0.0084Ohm | N-Channel | 1690pF @ 25V | 5.9m Ω @ 37.5A, 10V | 2.5V @ 250μA | 75A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB80R290C3AATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80r290c3aatma2-datasheets-9544.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 800V | 227W Tc | N-Channel | 2300pF @ 100V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 117nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA2N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixta2n80-datasheets-9546.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 54W | 1 | Not Qualified | R-PSSO-G2 | 18ns | 15 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 54W Tc | 2A | 8A | 200 mJ | 800V | N-Channel | 440pF @ 25V | 6.2 Ω @ 500mA, 10V | 5.5V @ 250μA | 2A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFP36N30P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfa36n30p3-datasheets-6952.pdf | TO-220-3 | 26 Weeks | 36A | 300V | 347W Tc | N-Channel | 2040pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMTS0D7N06CLTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d7n06cltxg-datasheets-9508.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 5W Ta 294.6W Tc | N-Channel | 16200pF @ 25V | 680μ Ω @ 50A, 10V | 2.5V @ 250μA | 62.2A Ta 477A Tc | 225nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFQ10N80P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80p-datasheets-2794.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 22ns | 22 ns | 62 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 600 mJ | 800V | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTH74N15T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 74A | 150V | N-Channel | 74A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU02N50D | IXYS | $1.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixty02n50dtrl-datasheets-8387.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 24 Weeks | yes | EAR99 | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.1W | 1 | Not Qualified | R-PSIP-T3 | 4ns | 4 ns | 28 ns | 200mA | 20V | SILICON | DRAIN | SWITCHING | 1.1W Ta 25W Tc | 0.2A | 0.8A | 500V | N-Channel | 120pF @ 25V | 30 Ω @ 50mA, 0V | 5V @ 25μA | 200mA Tc | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFA16N50P | IXYS | $4.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp16n50p-datasheets-3959.pdf | 500V | 16A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | No SVHC | 400mOhm | 3 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | THROUGH-HOLE | Single | 300W | 1 | FET General Purpose Power | 25ns | 22 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 5.5V | 300W Tc | TO-220AB | 40A | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 2.5mA | 16A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| NTMFS4C020NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-ntmfs4c020nt1g-datasheets-9519.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 3.2W Ta 134W Tc | N-Channel | 10144pF @ 15V | 0.7m Ω @ 30A, 10V | 2.2V @ 250μA | 47A Ta 303A Tc | 139nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C01NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4c01nt1g-datasheets-9524.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | FET General Purpose Power | 303A | Single | 30V | 3.2W Ta 134W Tc | N-Channel | 10144pF @ 15V | 0.9m Ω @ 30A, 10V | 2.2V @ 250μA | 47A Ta 303A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMTS0D4N04CTXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmts0d4n04ctxg-datasheets-9527.pdf | 8-PowerTDFN | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 5W Ta 244W Tc | N-Channel | 16500pF @ 20V | 450μ Ω @ 50A, 10V | 4V @ 250μA | 79.8A Ta 558A Tc | 251nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R199CPFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r199cpfksa1-datasheets-9528.pdf | 600V | 16A | TO-247-3 | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 139W | 1 | Not Qualified | 10 ns | 5ns | 50 ns | 16A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 139W Tc | N-Channel | 1520pF @ 100V | 199m Ω @ 9.9A, 10V | 3.5V @ 660μA | 16A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TK15A60D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | Single | 50W | 50ns | 25 ns | 15A | 30V | 50W Tc | 600V | N-Channel | 2600pF @ 25V | 370m Ω @ 7.5A, 10V | 4V @ 1mA | 15A Ta | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP22N65X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | compliant | 650V | 37W Tc | N-Channel | 2190pF @ 25V | 145m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 37nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMT1D3N08B | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdmt1d3n08b-datasheets-9485.pdf | 8-PowerVDFN | 20 Weeks | 248.52072mg | ACTIVE (Last Updated: 5 days ago) | yes | Single | 80V | 178W Tc | N-Channel | 19600pF @ 40V | 1.35m Ω @ 36A, 10V | 4V @ 250μA | 164A Tc | 260nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R150CFDAAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r150cfdaaksa1-datasheets-9489.pdf | TO-220-3 | Contains Lead | 3 | 18 Weeks | 3 | no | HIGH RELIABILITY | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | 12.4 ns | 7.6ns | 5.6 ns | 52.8 ns | 22.4A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 195.3W Tc | TO-220AB | 72A | 0.15Ohm | 614 mJ | N-Channel | 2340pF @ 100V | 150m Ω @ 9.3A, 10V | 4.5V @ 900μA | 22.4A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IPC300N20N3X7SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc300n20n3x7sa1-datasheets-9493.pdf | Lead Free | 18 Weeks | Halogen Free | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL60R104C7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl60r104c7auma1-datasheets-9495.pdf | 4-PowerTSFN | Contains Lead | 4 | 18 Weeks | 4 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 20A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 122W Tc | 83A | 97 mJ | N-Channel | 1819pF @ 400V | 104m Ω @ 9.7A, 10V | 4V @ 490μA | 20A Tc | 42nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTA230N075T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 75V | 480W Tc | N-Channel | 10500pF @ 25V | 4.2m Ω @ 50A, 10V | 4V @ 250μA | 230A Tc | 178nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP50N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta50n20p-datasheets-3223.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 26 ns | 35ns | 30 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 120A | 0.06Ohm | 1000 mJ | 200V | N-Channel | 2720pF @ 25V | 60m Ω @ 50A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| AUIRF1324STRL7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1324strl7p-datasheets-9462.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 340A | 24V | 300W Tc | N-Channel | 7590pF @ 24V | 1.65m Ω @ 195A, 10V | 4V @ 250μA | 340A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC300N15N3RX1SA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc300n15n3rx1sa2-datasheets-9465.pdf | Die | Lead Free | 18 Weeks | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 150V | 150V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 250μA | 1A Tj | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP20N65X2M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 15 Weeks | compliant | 650V | 36W Tc | N-Channel | 1450pF @ 25V | 185m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA7N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30 Weeks | 1000V | 300W Tc | N-Channel | 2590pF @ 25V | 1.9 Ω @ 3.5A, 10V | 6V @ 1mA | 7A Tc | 47nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6030KNZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-3P-3 Full Pack | Lead Free | 3 | 15 Weeks | No SVHC | 3 | EAR99 | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 5V | 86W Tc | 90A | N-Channel | 2350pF @ 25V | 130m Ω @ 14.5A, 10V | 5V @ 1mA | 30A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTA130N10T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta130n10t7-datasheets-9476.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 24 Weeks | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 47ns | 28 ns | 44 ns | 130A | 30V | SILICON | DRAIN | SWITCHING | 360W Tc | 350A | 0.0091Ohm | 400 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±20V |
