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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFP36N20X3M | IXYS | $3.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfp36n20x3m-datasheets-9803.pdf | TO-220-3 Full Pack, Isolated Tab | 19 Weeks | 200V | 36W Tc | N-Channel | 1425pF @ 25V | 45m Ω @ 18A, 10V | 4.5V @ 500μA | 36A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS3036TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irls3036trlpbf-datasheets-2628.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 380W | 1 | FET General Purpose Power | R-PSSO-G2 | 66 ns | 220ns | 110 ns | 110 ns | 195A | 16V | SILICON | DRAIN | SWITCHING | 1V | 380W Tc | 0.0024Ohm | 290 mJ | 60V | N-Channel | 11210pF @ 50V | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 195A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| AOK29S50L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-247-3 | 18 Weeks | 29A | 500V | 357W Tc | N-Channel | 1312pF @ 100V | 150m Ω @ 14.5A, 10V | 3.9V @ 250μA | 29A Tc | 26.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTU06N120P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 600mA | 1200V | N-Channel | 600mA Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7739L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7739l2tr-datasheets-9830.pdf | DirectFET™ Isometric L8 | 9.144mm | 558.8μm | 7.1mm | 9 | 16 Weeks | 3 | EAR99 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 21 ns | 71ns | 42 ns | 56 ns | 270A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.8W Ta 125W Tc | 46A | 40V | N-Channel | 11880pF @ 25V | 1m Ω @ 160A, 10V | 4V @ 250μA | 46A Ta 270A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRFS4115-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs41157p-datasheets-9836.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10 Weeks | 7 | EAR99 | NOT SPECIFIED | IRFS4115 | NOT SPECIFIED | 105A | 150V | 380W Tc | N-Channel | 5320pF @ 50V | 11.8m Ω @ 63A, 10V | 5V @ 250μA | 105A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4H01NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs4h01nft3g-datasheets-9579.pdf | 8-PowerTDFN | Lead Free | 10 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 334A | Single | 25V | 3.2W Ta 125W Tc | N-Channel | 5538pF @ 12V | 0.7m Ω @ 30A, 10V | 2.1V @ 250μA | 54A Ta 334A Tc | 82nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS4115-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfs41157p-datasheets-9836.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | EAR99 | NOT SPECIFIED | IRFS4115 | NOT SPECIFIED | 150V | 380W Tc | N-Channel | 5320pF @ 50V | 11.8m Ω @ 63A, 10V | 5V @ 250μA | 105A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2804WL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf2804wl-datasheets-9848.pdf | TO-262-3 Wide Leads | 10.67mm | 9.65mm | 4.83mm | 16 Weeks | 3 | EAR99 | No | Single | 300W | 1 | FET General Purpose Power | 19 ns | 241ns | 100 ns | 71 ns | 295A | 20V | 300W Tc | 240A | 40V | N-Channel | 7978pF @ 25V | 1.8m Ω @ 187A, 10V | 4V @ 250μA | 240A Tc | 225nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDH210N08 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | 3 | 4 Weeks | 6.39g | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SWITCHING | 462W Tc | TO-247AB | 210A | 840A | 0.0055Ohm | 9375 mJ | 75V | N-Channel | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF4D5N10C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-fdpf4d5n10c-datasheets-9855.pdf | TO-220-3 Full Pack | 20 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | 100V | 2.4W Ta 37.5W Tc | N-Channel | 5065pF @ 50V | 4.5m Ω @ 100A, 10V | 4V @ 310μA | 128A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-60ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r060es127-datasheets-9780.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 20 Weeks | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 338W Tc | 120A | 1135A | 0.0022Ohm | 913 mJ | N-Channel | 9997pF @ 30V | 2.2m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 137nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFI830G | Vishay Siliconix | $5.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi830gpbf-datasheets-3802.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 21 Weeks | 6.000006g | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 3.1A | 20V | 500V | 35W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPW60R120C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r120c7xksa1-datasheets-9788.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 19A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 92W Tc | 66A | 0.12Ohm | 78 mJ | N-Channel | 1500pF @ 400V | 120m Ω @ 7.8A, 10V | 4V @ 390μA | 19A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTA34N65X2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15 Weeks | 650V | 540W Tc | N-Channel | 3000pF @ 25V | 96m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ110N055P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq110n055p-datasheets-2729.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.3mm | 4.9mm | 3 | 10 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 390W | 1 | Not Qualified | 27 ns | 53ns | 45 ns | 66 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 390W Tc | 250A | 1000 mJ | 55V | N-Channel | 2210pF @ 25V | 13.5m Ω @ 500mA, 10V | 5.5V @ 250μA | 110A Tc | 76nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRF7799L2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7799l2tr-datasheets-9749.pdf | DirectFET™ Isometric L8 | 9 | 16 Weeks | 15 | EAR99 | No | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 36.3 ns | 33.5ns | 26.6 ns | 73.9 ns | 6.6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4.3W Ta 125W Tc | 35A | 0.038Ohm | 325 mJ | 250V | N-Channel | 6714pF @ 25V | 38m Ω @ 21A, 10V | 5V @ 250μA | 375A Tc | 165nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SPP20N60CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-spp20n60cfdxksa1-datasheets-9755.pdf | 650V | 20.7A | TO-220-3 | Lead Free | 9 Weeks | 3 | Single | 208W | PG-TO220-3-1 | 2.4nF | 12 ns | 15ns | 6.4 ns | 59 ns | 20.7A | 20V | 650V | 208W Tc | 190mOhm | 600V | N-Channel | 2400pF @ 25V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 20.7A Tc | 124nC @ 10V | 220 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHG22N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg22n65ege3-datasheets-9758.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | Unknown | 3 | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 227W | 1 | 33ns | 38 ns | 73 ns | 22A | 4V | SILICON | DRAIN | SWITCHING | 227W Tc | TO-247AC | 56A | 650V | N-Channel | 2415pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTQ42N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtp42n25p-datasheets-9418.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 28ns | 30 ns | 81 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 110A | 0.084Ohm | 1000 mJ | 250V | N-Channel | 2300pF @ 25V | 84m Ω @ 500mA, 10V | 5.5V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTQ50N20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta50n20p-datasheets-3223.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 35ns | 30 ns | 70 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.06Ohm | 1000 mJ | 200V | N-Channel | 2720pF @ 25V | 60m Ω @ 50A, 10V | 5V @ 250μA | 50A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STK30N2LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stk30n2llh5-datasheets-9333.pdf | PolarPak® | 4 | 10 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | STK30 | 10 | Single | 5.2W | 1 | Not Qualified | R-XDSO-N4 | 30A | SILICON | DRAIN | SWITCHING | 5.2W Tc | 120A | 0.0036Ohm | 25V | N-Channel | 2290pF @ 25V | 2.9m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFA130N10T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfa130n10t2-datasheets-2745.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 360W Tc | 300A | 0.0091Ohm | 800 mJ | N-Channel | 6600pF @ 25V | 9.1m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP460P2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtq460p2-datasheets-2745.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 480W | 1 | FET General Purpose Power | 24A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 480W Tc | TO-220AB | 50A | 0.27Ohm | 750 mJ | N-Channel | 2890pF @ 25V | 270m Ω @ 12A, 10V | 4.5V @ 250μA | 24A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHG32N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg32n50de3-datasheets-9768.pdf | TO-247-3 | Lead Free | 3 | 13 Weeks | 38.000013g | 3 | No | SINGLE | 1 | 390W | 1 | 27 ns | 75ns | 55 ns | 58 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 390W Tc | TO-247AC | 89A | 225 mJ | N-Channel | 2550pF @ 100V | 150m Ω @ 16A, 10V | 5V @ 250μA | 30A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXTQ62N15P | IXYS | $6.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta62n15p-datasheets-5532.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 350W | 1 | Not Qualified | 38ns | 35 ns | 76 ns | 62A | 20V | SILICON | DRAIN | SWITCHING | 350W Tc | 150A | 0.04Ohm | 1000 mJ | 150V | N-Channel | 2250pF @ 25V | 40m Ω @ 31A, 10V | 5.5V @ 250μA | 62A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTP1R4N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtp1r4n120p-datasheets-9773.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 86W | 1 | FET General Purpose Power | R-PSFM-T3 | 27ns | 29 ns | 78 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 86W Tc | TO-220AB | 3A | 1.2kV | N-Channel | 666pF @ 25V | 13 Ω @ 500mA, 10V | 4.5V @ 100μA | 1.4A Tc | 24.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTA2R4N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1200V | 125W Tc | N-Channel | 1207pF @ 25V | 7.5 Ω @ 1.2A, 10V | 4.5V @ 250μA | 2.4A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixth12n65x2-datasheets-9746.pdf | TO-247-3 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 12A | 650V | 180W Tc | N-Channel | 1100pF @ 25V | 300m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP7N80P | IXYS | $4.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp7n80p-datasheets-9747.pdf | TO-220-3 | 10.66mm | 9.15mm | 4.83mm | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 32ns | 24 ns | 55 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 7A | 18A | 800V | N-Channel | 1890pF @ 25V | 1.44 Ω @ 3.5A, 10V | 5V @ 1mA | 7A Tc | 32nC @ 10V | 10V | ±30V |
