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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP44N30T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 18 Weeks | 44A | 300V | N-Channel | 44A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ75N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq75n10p-datasheets-2722.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 53ns | 45 ns | 66 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 200A | 0.025Ohm | 1000 mJ | 100V | N-Channel | 2250pF @ 25V | 25m Ω @ 500mA, 10V | 5.5V @ 250μA | 75A Tc | 74nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFP130N10T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™, HiPerFET™, TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfp130n10t2-datasheets-9702.pdf | TO-220-3 | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 130A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 360W Tc | TO-220AB | 300A | 0.0091Ohm | 800 mJ | N-Channel | 6600pF @ 25V | 9.1m Ω @ 65A, 10V | 4.5V @ 1mA | 130A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTQ16N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixta16n50p-datasheets-9413.pdf | 500V | 16A | TO-3P-3, SC-65-3 | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 28ns | 25 ns | 70 ns | 16A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.4Ohm | 750 mJ | 500V | N-Channel | 2250pF @ 25V | 400m Ω @ 8A, 10V | 5.5V @ 250μA | 16A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFA18N65X2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | compliant | 650V | 290W Tc | N-Channel | 1520pF @ 25V | 200m Ω @ 9A, 10V | 5V @ 1.5mA | 18A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA20N60CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-spa20n60cfdxksa1-datasheets-9704.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 35W | 1 | Not Qualified | 12 ns | 6.4 ns | 20.7A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 52A | 0.22Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 220m Ω @ 13.1A, 10V | 5V @ 1mA | 20.7A Tc | 124nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPI030N10N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipi030n10n3gxksa1-datasheets-9710.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 34 ns | 58ns | 28 ns | 84 ns | 100A | 20V | 100V | SILICON | SWITCHING | 300W Tc | 400A | 100V | N-Channel | 14800pF @ 50V | 3m Ω @ 100A, 10V | 3.5V @ 275μA | 100A Tc | 206nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TK19A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $15.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 2.6nF | 50ns | 25 ns | 19A | 30V | 450V | 50W Tc | N-Channel | 2600pF @ 25V | 250mOhm @ 9.5A, 10V | 4V @ 1mA | 19A Ta | 45nC @ 10V | 250 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP36NF06FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp36nf06-datasheets-5396.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | STP36N | 3 | Single | 25W | 1 | FET General Purpose Power | 10 ns | 40ns | 9 ns | 27 ns | 18A | 20V | SILICON | ISOLATED | SWITCHING | 4V | 25W Tc | TO-220AB | 72A | 0.04Ohm | 200 mJ | 60V | N-Channel | 690pF @ 25V | 40m Ω @ 15A, 10V | 4V @ 250μA | 18A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP72N20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 53 Weeks | 72A | 200V | N-Channel | 72A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA160N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixta160n10t-datasheets-2719.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 430W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 61ns | 42 ns | 49 ns | 160A | SILICON | DRAIN | SWITCHING | 430W Tc | 430A | 0.007Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 160A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXKP13N60C5M | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp13n60c5m-datasheets-9720.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | yes | AVALANCHE RATED | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 32W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6.5A | 20V | SILICON | SWITCHING | TO-220AB | 0.3Ohm | 290 mJ | 600V | N-Channel | 1100pF @ 100V | 300m Ω @ 6.6A, 10V | 3.5V @ 440μA | 6.5A Tc | 30nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STD6NM60N-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp6nm60n-datasheets-5176.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | not_compliant | e3 | Matte Tin (Sn) | 260 | STD6N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | Not Qualified | 8ns | 9 ns | 40 ns | 4.6A | 25V | SILICON | SWITCHING | 45W Tc | 18.4A | 0.92Ohm | 65 mJ | 600V | N-Channel | 420pF @ 50V | 920m Ω @ 2.3A, 10V | 4V @ 250μA | 4.6A Tc | 13nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| FDB2532-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb2532f085-datasheets-9685.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 2 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 310W Tc | 8A | 0.016Ohm | 400 mJ | N-Channel | 5870pF @ 25V | 16m Ω @ 33A, 10V | 4V @ 250μA | 79A Tc | 107nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS4030TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-auirls4030trl-datasheets-9730.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 370W Tc | 180A | 730A | 0.0043Ohm | 305 mJ | N-Channel | 11360pF @ 50V | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 180A Tc | 130nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| FQB34P10TM-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, QFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 3 | yes | No | e3 | Tin (Sn) | GULL WING | Single | 3.75W | 1 | Other Transistors | R-PSSO-G2 | 25 ns | 250ns | 210 ns | 160 ns | 33.5A | 25V | SILICON | DRAIN | SWITCHING | 100V | 3.75W Ta 155W Tc | 0.06Ohm | 2200 mJ | -100V | P-Channel | 2910pF @ 25V | 60m Ω @ 16.75A, 10V | 4V @ 250μA | 33.5A Tc | 110nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| FCP25N60N-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcp25n60nf102-datasheets-9693.pdf | TO-220-3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | No | Single | 216W | 1 | FET General Purpose Power | 21 ns | 22ns | 5 ns | 68 ns | 25A | 30V | 2V | 216W Tc | 600V | N-Channel | 3352pF @ 100V | 125m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB025N10N3GE8187ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb025n10n3ge8187atma1-datasheets-9609.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 100V | 300W Tc | N-Channel | 14800pF @ 50V | 2.5m Ω @ 100A, 10V | 3.5V @ 275μA | 180A | 206nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXKP13N60C5 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixkp13n60c5-datasheets-9701.pdf | TO-220-3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 13A | 20V | SILICON | DRAIN | SWITCHING | TO-220AB | 0.3Ohm | 290 mJ | 600V | N-Channel | 1100pF @ 100V | 300m Ω @ 6.6A, 10V | 3.5V @ 440μA | 13A Tc | 30nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHB24N65E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishay-sihb24n65ee3-datasheets-2666.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 17 Weeks | 1.437803g | Unknown | 3 | AVALANCHE RATED | No | GULL WING | 3 | 1 | Single | 250W | 1 | R-PSSO-G2 | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | SILICON | SWITCHING | 650V | 650V | 2V | 250W Tc | 70A | 508 mJ | N-Channel | 2740pF @ 100V | 145m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| AOB42S60L | Alpha & Omega Semiconductor Inc. | $9.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob42s60l-datasheets-2669.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | FET General Purpose Power | 37A | Single | 600V | 417W Tc | N-Channel | 2154pF @ 100V | 109m Ω @ 21A, 10V | 3.8V @ 250μA | 37A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3306PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfb3306pbf-datasheets-3047.pdf | 60V | 160A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.73mm | 2.39mm | 6.22mm | Lead Free | 16 Weeks | No SVHC | 4.2MOhm | 3 | EAR99 | No | Single | 230mW | 1 | 15 ns | 46ns | 77 ns | 40 ns | 160A | 20V | 4V | 230W Tc | 31 ns | 60V | N-Channel | 4520pF @ 50V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FCP22N60N-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 14 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 600V | 205W Tc | N-Channel | 1950pF @ 100V | 165m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±45V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3805L-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3805l7p-datasheets-9636.pdf | TO-262-7 | 10.67mm | 11.3mm | 4.83mm | 7 | No SVHC | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | SINGLE | 300W | 1 | FET General Purpose Power | 23 ns | 130ns | 52 ns | 80 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 300W Tc | 680 mJ | 55V | N-Channel | 7820pF @ 25V | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDB0250N807L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb0250n807l-datasheets-9502.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 16 Weeks | 1.312g | No SVHC | 7 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 240A | 80V | 2.9V | 3.8W Ta 214W Tc | N-Channel | 15400pF @ 40V | 2.2m Ω @ 30A, 10V | 4V @ 250μA | 240A Tc | 200nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFS8409TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfb8409-datasheets-0594.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | YES | NOT SPECIFIED | IRFS8409 | NOT SPECIFIED | FET General Purpose Power | Single | 40V | 375W Tc | 195A | N-Channel | 14240pF @ 25V | 1.2m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 450nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC302N12N3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc302n12n3x1sa1-datasheets-9651.pdf | Die | Lead Free | 18 Weeks | EAR99 | Halogen Free | YES | UNSPECIFIED | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XXUC-N | SILICON | SINGLE WITH BUILT-IN DIODE | 120V | 120V | 0.1Ohm | N-Channel | 100m Ω @ 2A, 10V | 4V @ 275μA | 1A Tj | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF3805S-7TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Contains Lead | 6 | 16 Weeks | 7 | EAR99 | ULTRA LOW RESISTANCE | No | SINGLE | GULL WING | 1 | 1 | R-PSSO-G6 | 23 ns | 130ns | 52 ns | 80 ns | 160A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | 0.0026Ohm | 440 mJ | N-Channel | 7820pF @ 25V | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FCH099N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch099n60e-datasheets-2690.pdf | TO-247-3 | 12 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 24 ns | 23ns | 22 ns | 92 ns | 37A | 20V | 600V | 357W Tc | N-Channel | 3465pF @ 380V | 99m Ω @ 18.5A, 10V | 3.5V @ 250μA | 37A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R110CFDATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb65r110cfdatma2-datasheets-9662.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 277.8W Tc | N-Channel | 3240pF @ 100V | 110m Ω @ 12.7A, 10V | 4.5V @ 1.3mA | 31.2A Tc | 118nC @ 10V | 10V | ±20V |
