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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF9Z34S | Vishay Siliconix | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z34strrpbf-datasheets-5811.pdf | -60V | -18A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | 60V | 3.7W Ta 88W Tc | 140mOhm | -60V | P-Channel | 1100pF @ 25V | 140mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF9540STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | -100V | -19A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | 19A | 20V | 100V | 3.7W Ta 150W Tc | 200mOhm | -100V | P-Channel | 1400pF @ 25V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF840L | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840l-datasheets-8408.pdf | 500V | 8A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | 1 | Single | I2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF7326D2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W Ta | P-Channel | 440pF @ 25V | 100mOhm @ 1.8A, 10V | 1V @ 250μA | 3.6A Ta | 25nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC40A | Vishay Siliconix | $0.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc40apbf-datasheets-3638.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | Unknown | 3 | No | 1 | Single | TO-220AB | 1.036nF | 13 ns | 23ns | 18 ns | 31 ns | 6.2A | 30V | 600V | 4V | 125W Tc | 1.2Ohm | 600V | N-Channel | 1036pF @ 25V | 4 V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 42nC @ 10V | 1.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IRF9530STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | -100V | -14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 860pF | 12 ns | 52ns | 39 ns | 31 ns | 12A | 20V | 100V | 3.7W Ta 88W Tc | 300mOhm | -100V | P-Channel | 860pF @ 25V | 300mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF7353D1TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W Ta | N-Channel | 650pF @ 25V | 32mOhm @ 5.8A, 10V | 1V @ 250μA | 6.5A Ta | 33nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z14S | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z14spbf-datasheets-3262.pdf | -60V | -6.7A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | 3.7W | D2PAK | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | 3.7W Ta 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRFD010 | Vishay Siliconix | $2.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd010-datasheets-8430.pdf | 50V | 1.7A | 4-DIP (0.300, 7.62mm) | Contains Lead | 639.990485mg | 4 | 1 | Single | 4-DIP, Hexdip, HVMDIP | 250pF | 1.7A | 50V | 1W Tc | 200mOhm | 50V | N-Channel | 250pF @ 25V | 200mOhm @ 860mA, 10V | 4V @ 250μA | 1.7A Tc | 13nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF840AS | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf840astrrpbf-datasheets-6542.pdf | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 3.1W Ta 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRFDC20 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfdc20pbf-datasheets-5489.pdf | 600V | 320mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | No | 1 | 1.3W | 4-DIP, Hexdip, HVMDIP | 350pF | 10 ns | 23ns | 23 ns | 30 ns | 320mA | 20V | 600V | 1W Ta | 4.4Ohm | 600V | N-Channel | 350pF @ 25V | 4.4Ohm @ 190mA, 10V | 4V @ 250μA | 320mA Ta | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF7324D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 20V | 2W Ta | P-Channel | 260pF @ 15V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250μA | 2.2A Ta | 7.8nC @ 4.5V | Schottky Diode (Isolated) | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf630ns-datasheets-8389.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 82W Tc | 9.3A | 37A | 0.3Ohm | 94 mJ | N-Channel | 575pF @ 25V | 300m Ω @ 5.4A, 10V | 4V @ 250μA | 9.3A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF740STRL | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf740spbf-datasheets-9653.pdf | 400V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9Z24NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 3.8W Ta 45W Tc | 12A | 48A | 0.175Ohm | 96 mJ | P-Channel | 350pF @ 25V | 175m Ω @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF9520NS | Infineon Technologies | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 48W Tc | 6.8A | 27A | 0.48Ohm | 140 mJ | P-Channel | 350pF @ 25V | 480m Ω @ 4A, 10V | 4V @ 250μA | 6.8A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF830AS | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | 500V | 5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 3.1W Ta 74W Tc | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRF9630S | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9630spbf-datasheets-1938.pdf | -200V | -6.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Contains Lead | 1.437803g | 1 | Single | 74W | D2PAK | 700pF | 12 ns | 27ns | 24 ns | 28 ns | 6.5A | 20V | 200V | 3W Ta 74W Tc | 800mOhm | -200V | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFBC30A | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc30apbf-datasheets-5471.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | TO-220AB | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF9Z34STRL | Vishay Siliconix | $0.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z34strrpbf-datasheets-5811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | 18A | 20V | 60V | 3.7W Ta 88W Tc | 140mOhm | P-Channel | 1100pF @ 25V | 140mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFB9N65A | Vishay Siliconix | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb9n65apbf-datasheets-3633.pdf | 650V | 8.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | 1 | Single | 167W | TO-220AB | 1.417nF | 14 ns | 20ns | 18 ns | 34 ns | 8.5A | 30V | 650V | 167W Tc | 920mOhm | 650V | N-Channel | 1417pF @ 25V | 930mOhm @ 5.1A, 10V | 4V @ 250μA | 8.5A Tc | 48nC @ 10V | 930 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IRF624 | Vishay Siliconix | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf624pbf-datasheets-4672.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 260pF | 7 ns | 13ns | 12 ns | 20 ns | 4.4A | 20V | 250V | 50W Tc | 1.1Ohm | N-Channel | 260pF @ 25V | 1.1Ohm @ 2.6A, 10V | 4V @ 250μA | 4.4A Tc | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFB11N50A | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 1 | Single | 170W | 1 | TO-220AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 170W Tc | 520mOhm | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF540STRR | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf540spbf-datasheets-3481.pdf | 100V | 28A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK (TO-263) | 1.7nF | 11 ns | 44ns | 43 ns | 53 ns | 28A | 20V | 100V | 3.7W Ta 150W Tc | 77mOhm | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9540S | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | -100V | -19A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | 19A | 20V | 100V | 3.7W Ta 150W Tc | 200mOhm | -100V | P-Channel | 1400pF @ 25V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF9Z24 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z24pbf-datasheets-3208.pdf | -60V | -11A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220AB | 570pF | 13 ns | 68ns | 29 ns | 15 ns | 11A | 20V | 60V | 60W Tc | 280mOhm | P-Channel | 570pF @ 25V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF540S | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf540spbf-datasheets-3481.pdf | 100V | 28A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | 3.7W | 1 | D2PAK (TO-263) | 1.7nF | 11 ns | 44ns | 43 ns | 53 ns | 28A | 20V | 100V | 3.7W Ta 150W Tc | 77mOhm | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRF9410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 7A | 37A | 0.03Ohm | 70 mJ | N-Channel | 550pF @ 25V | 30m Ω @ 7A, 10V | 1V @ 250μA | 7A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7807 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807-datasheets-8327.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 8.3A | 66A | 0.025Ohm | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRF7463 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 14A | 110A | 0.008Ohm | 320 mJ | N-Channel | 3150pF @ 15V | 8m Ω @ 14A, 10V | 2V @ 250μA | 14A Ta | 51nC @ 4.5V | 2.7V 10V | ±12V |
