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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL3803S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 200W Tc | 140A | 470A | 0.006Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IRFI520N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 Full Pack | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | 100V | 100V | 30W Tc | TO-220AB | 7.2A | 0.2Ohm | N-Channel | 330pF @ 25V | 200m Ω @ 4.3A, 10V | 4V @ 250μA | 7.6A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDB6060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp6060-datasheets-3375.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | 60V | 100W Tc | N-Channel | 1800pF @ 25V | 25m Ω @ 24A, 10V | 4V @ 250μA | 48A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ48N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1996 | TO-220-3 Full Pack | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | 42W Tc | TO-220AB | 36A | 210A | 0.016Ohm | 270 mJ | N-Channel | 1900pF @ 25V | 16m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 89nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFIZ24E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | 3 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 60V | 60V | 29W Tc | 14A | 68A | 0.071Ohm | 71 mJ | N-Channel | 370pF @ 25V | 71m Ω @ 7.8A, 10V | 4V @ 250μA | 14A Tc | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFP048N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-247-3 | 3 | EAR99 | AVALANCHE RATED, FAST SWITCHING | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 140W Tc | TO-247AC | 64A | 210A | 0.016Ohm | 270 mJ | N-Channel | 1900pF @ 25V | 16m Ω @ 37A, 10V | 4V @ 250μA | 64A Tc | 89nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF9Z14 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z14pbf-datasheets-0020.pdf | -60V | -6.7A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 270pF | 11 ns | 63ns | 31 ns | 10 ns | -6.7A | 20V | 60V | 43W Tc | 500mOhm | -60V | P-Channel | 270pF @ 25V | -4 V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||
| NDP4050 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndb4050-datasheets-7801.pdf | 60V | 15A | TO-220-3 | Contains Lead | Single | 50W | 70ns | 37 ns | 18 ns | 15A | 20V | 50V | N-Channel | 450pF @ 25V | 100m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | TO-220-3 | 30V | 2W Ta 89W Tc | N-Channel | 1900pF @ 25V | 14m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 43nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI540N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 Full Pack | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 54W Tc | TO-220AB | 23A | 120A | 0.053Ohm | 310 mJ | N-Channel | 1800pF @ 25V | 44m Ω @ 12A, 10V | 2V @ 250μA | 23A Tc | 74nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IRFIZ34E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | 3 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | 260 | 40 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 60V | 60V | 37W Tc | 21A | 100A | 0.042Ohm | 110 mJ | N-Channel | 700pF @ 25V | 42m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NDB4060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp4060-datasheets-7624.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 50W Tc | N-Channel | 450pF @ 25V | 100mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLL3303TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1W Ta | 4.6A | 37A | 0.031Ohm | 140 mJ | N-Channel | 840pF @ 25V | 31m Ω @ 4.6A, 10V | 1V @ 250μA | 4.6A Ta | 50nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| IRF3315S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 94W Tc | 21A | 84A | 0.082Ohm | 350 mJ | N-Channel | 1300pF @ 25V | 82m Ω @ 12A, 10V | 4V @ 250μA | 21A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 94-2310 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 9 Weeks | D2PAK | 100V | 3.8W Ta 79W Tc | N-Channel | 800pF @ 25V | 100mOhm @ 9A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI3803 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 30V | 30V | 63W Tc | 76A | 470A | 0.006Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 6m Ω @ 40A, 10V | 1V @ 250μA | 76A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| IRL3103S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 94W Tc | 64A | 220A | 0.012Ohm | 130 mJ | N-Channel | 1650pF @ 25V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| NDB4050L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndb4050l-datasheets-7787.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 50V | 50W Tc | N-Channel | 600pF @ 25V | 80mOhm @ 15A, 10V | 2V @ 250μA | 15A Tc | 17nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2001 | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE, FAST SWITCHING | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 200W Tc | TO-220AB | 120A | 470A | 0.006Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| NDB7060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp7060-datasheets-5032.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60V | 150W Tc | N-Channel | 3600pF @ 25V | 13m Ω @ 40A, 10V | 4V @ 250μA | 75A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 94-4762 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 55V | 68W Tc | N-Channel | 700pF @ 25V | 45mOhm @ 16A, 10V | 4V @ 250μA | 27A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP044N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-247-3 | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 120W Tc | TO-247AC | 49A | 180A | 0.02Ohm | 230 mJ | N-Channel | 1500pF @ 25V | 20m Ω @ 29A, 10V | 4V @ 250μA | 53A Tc | 61nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFL4105TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfl4105tr-datasheets-7808.pdf | TO-261-4, TO-261AA | 4 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 55V | 55V | 1W Ta | 3.7A | 0.045Ohm | N-Channel | 660pF @ 25V | 45m Ω @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NDB4060L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp4060l-datasheets-7613.pdf | 60V | 15A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | D2PAK (TO-263AB) | 600pF | 15A | 60V | 50W Tc | N-Channel | 600pF @ 25V | 80mOhm @ 15A, 10V | 2V @ 250μA | 15A Tc | 17nC @ 5V | 80 mΩ | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDB7050L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp7050l-datasheets-7667.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 50V | N-Channel | 4000pF @ 25V | 15m Ω @ 37.5A, 5V | 2V @ 250μA | 75A Tc | 115nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDB7060L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp7060l-datasheets-7660.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | N-Channel | 4000pF @ 25V | 15mOhm @ 37.5A, 5V | 2V @ 250μA | 75A Tc | 115nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIZ46N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | 3 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | 45W Tc | 33A | 180A | 0.02Ohm | 230 mJ | N-Channel | 1500pF @ 25V | 20m Ω @ 19A, 10V | 4V @ 250μA | 33A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFZ44E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | TO-220-3 | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | TO-220AB | 48A | 192A | 0.023Ohm | 220 mJ | N-Channel | 1360pF @ 25V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF3315 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 136W Tc | TO-220AB | 27A | 108A | 0.07Ohm | 350 mJ | N-Channel | 1300pF @ 25V | 70m Ω @ 12A, 10V | 4V @ 250μA | 27A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLI2203N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE | ISOLATED | SWITCHING | 30V | 30V | 47W Tc | TO-220AB | 61A | 0.007Ohm | N-Channel | 3500pF @ 25V | 7m Ω @ 37A, 10V | 1V @ 250μA | 61A Tc | 110nC @ 4.5V | 4.5V 10V | ±16V |
