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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF730AS | Vishay Siliconix | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | 400V | 5.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | D2PAK | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 74W Tc | 1Ohm | 400V | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRF7807D2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2.5W Ta | N-Channel | 25mOhm @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | Schottky Diode (Isolated) | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840A | Vishay Siliconix | $0.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | /files/vishaysiliconix-irf840apbf-datasheets-2205.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRF640S | Vishay Siliconix | $0.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf640spbf-datasheets-2368.pdf | 200V | 18A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 2.240009g | 180mOhm | 1 | Single | D2PAK | 1.3nF | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | 200V | 3.1W Ta 130W Tc | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 180mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF9510S | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | -100V | -4A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | 43W | D2PAK | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 3.7W Ta 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF9520STRL | Vishay Siliconix | $1.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9520spbf-datasheets-1890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 1 | Single | D2PAK | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | 6.8A | 20V | 100V | 3.7W Ta 60W Tc | 600mOhm | P-Channel | 390pF @ 25V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7809 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7809-datasheets-8310.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.5W Ta | 13.3A | 100A | 0.009Ohm | N-Channel | 7300pF @ 16V | 7.5m Ω @ 15A, 4.5V | 1V @ 250μA | 17.6A Ta | 86nC @ 5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7809A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 8-SOIC (0.154, 3.90mm Width) | 8 | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 13.3A | 100A | 0.009Ohm | N-Channel | 7300pF @ 16V | 8.5m Ω @ 15A, 4.5V | 1V @ 250μA | 14.5A Ta | 75nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7811ATR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2008 | 8-SOIC (0.154, 3.90mm Width) | 28V | 2.5W Ta | N-Channel | 1760pF @ 15V | 10m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 26nC @ 4.5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9410 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | HIGH RELIABILITY | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 7A | 37A | 0.03Ohm | 70 mJ | N-Channel | 550pF @ 25V | 30m Ω @ 7A, 10V | 1V @ 250μA | 7A Ta | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7807 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7807-datasheets-8327.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 8.3A | 66A | 0.025Ohm | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 8.3A Ta | 17nC @ 5V | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7463 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | 14A | 110A | 0.008Ohm | 320 mJ | N-Channel | 3150pF @ 15V | 8m Ω @ 14A, 10V | 2V @ 250μA | 14A Ta | 51nC @ 4.5V | 2.7V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7811A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 28V | 2.5W Ta | MS-012AA | 10.8A | N-Channel | 1760pF @ 15V | 10m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 26nC @ 4.5V | 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 200W Tc | 38A | 140A | 0.06Ohm | 120 mJ | P-Channel | 2700pF @ 25V | 60m Ω @ 24A, 10V | 4V @ 250μA | 40A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF644 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644pbf-datasheets-1274.pdf | 250V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 6.000006g | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 125W Tc | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF540STRL | Vishay Siliconix | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf540strl-datasheets-8228.pdf | 100V | 28A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 1 | Single | 3.7W | 1 | D2PAK (TO-263) | 1.7nF | 8.8 ns | 30ns | 20 ns | 19 ns | 28A | 20V | 100V | 3.7W Ta 150W Tc | 77mOhm | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 77 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF3710STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | 57A | 180A | 0.023Ohm | 280 mJ | N-Channel | 3130pF @ 25V | 23m Ω @ 28A, 10V | 4V @ 250μA | 57A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF644STRL | Vishay Siliconix | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644strl-datasheets-1607.pdf | 250V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 3.1W Ta 125W Tc | 280mOhm | 250V | N-Channel | 1300pF @ 25V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF744 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf744-datasheets-8234.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | Unknown | 3 | 1 | Single | TO-220AB | 1.4nF | 8.7 ns | 28ns | 27 ns | 58 ns | 8.8A | 20V | 450V | 125W Tc | 630mOhm | N-Channel | 1400pF @ 25V | 4 V | 630mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 80nC @ 10V | 630 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF6215S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 110W Tc | 13A | 44A | 0.29Ohm | 310 mJ | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF7353D1 | Infineon Technologies | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 30V | 2W Ta | N-Channel | 650pF @ 25V | 32mOhm @ 5.8A, 10V | 1V @ 250μA | 6.5A Ta | 33nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF614 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf614pbf-datasheets-0341.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 2.7A | 20V | 250V | 36W Tc | 2Ohm | N-Channel | 140pF @ 25V | 2Ohm @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| 64-0007 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-640007-datasheets-8258.pdf | TO-220-3 | TO-220AB | 200V | 150W Tc | N-Channel | 1160pF @ 25V | 150mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7201TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7201-datasheets-7382.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Tc | MS-012AA | 7.3A | 58A | 0.03Ohm | 70 mJ | N-Channel | 550pF @ 25V | 30m Ω @ 7.3A, 10V | 1V @ 250μA | 7.3A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7455 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/infineontechnologies-irf7455-datasheets-8266.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 15A | 120A | 0.0075Ohm | 200 mJ | N-Channel | 3480pF @ 25V | 7.5m Ω @ 15A, 10V | 2V @ 250μA | 15A Ta | 56nC @ 5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| IRF730A | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730apbf-datasheets-2354.pdf | 400V | 5.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | 1 | Single | TO-220AB | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 74W Tc | 1Ohm | 400V | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRF6215STRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 110W Tc | 13A | 44A | 0.29Ohm | 310 mJ | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF630S | Vishay Siliconix | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 200V | 6.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK (TO-263) | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 3W Ta 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF530NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 70W Tc | 17A | 60A | 0.09Ohm | 93 mJ | N-Channel | 920pF @ 25V | 90m Ω @ 9A, 10V | 4V @ 250μA | 17A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2N7002W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-2n7002w7f-datasheets-6561.pdf | 60V | 115mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Contains Lead | 3 | 6.208546mg | No SVHC | 3 | no | EAR99 | not_compliant | e0 | DUAL | GULL WING | 235 | 3 | 1 | Single | 10 | 200mW | 1 | FET General Purpose Power | Not Qualified | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 200mW Ta | 5 pF | 70V | N-Channel | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 115mA Ta | 5V 10V | ±20V |
