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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF530NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 70W Tc | 17A | 60A | 0.09Ohm | 93 mJ | N-Channel | 920pF @ 25V | 90m Ω @ 9A, 10V | 4V @ 250μA | 17A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2N7002W-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/diodesincorporated-2n7002w7f-datasheets-6561.pdf | 60V | 115mA | SC-70, SOT-323 | 2.2mm | 1mm | 1.35mm | Contains Lead | 3 | 6.208546mg | No SVHC | 3 | no | EAR99 | not_compliant | e0 | DUAL | GULL WING | 235 | 3 | 1 | Single | 10 | 200mW | 1 | FET General Purpose Power | Not Qualified | 7 ns | 11 ns | 115mA | 20V | SILICON | SWITCHING | 200mW Ta | 5 pF | 70V | N-Channel | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 2V @ 250μA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRLU2905 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlu2905-datasheets-8163.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | ULTRA-LOW RESISTANCE, AVALANCHE RATED, FAST SWITCHING | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | 42A | 160A | 0.03Ohm | 210 mJ | N-Channel | 1700pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF2807S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | 75A | 280A | 0.013Ohm | 340 mJ | N-Channel | 3820pF @ 25V | 13m Ω @ 43A, 10V | 4V @ 250μA | 82A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3515S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | YES | FET General Purpose Power | Single | 150V | 200W Tc | 41A | N-Channel | 2260pF @ 25V | 45m Ω @ 25A, 10V | 4.5V @ 250μA | 41A Tc | 107nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF530S | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | 100V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 6.000006g | 1 | Single | D2PAK | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 3.7W Ta 88W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF520NS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1995 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.75 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 48W Tc | 9.7A | 38A | 0.2Ohm | 91 mJ | N-Channel | 330pF @ 25V | 200m Ω @ 5.7A, 10V | 4V @ 250μA | 9.7A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NDP4050L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndb4050l-datasheets-7787.pdf | TO-220-3 | TO-220-3 | 50V | 50W Tc | N-Channel | 600pF @ 25V | 80mOhm @ 15A, 10V | 2V @ 250μA | 15A Tc | 17nC @ 5V | 5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP6030L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp6030l-datasheets-8190.pdf | TO-220-3 | compliant | 30V | 52W Tc | N-Channel | 1250pF @ 15V | 13m Ω @ 26A, 10V | 3V @ 250μA | 48A Ta | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N10Q | IXYS | $2.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh80n10q-datasheets-8192.pdf | 100V | 80A | TO-247-3 | Lead Free | 3 | 8 Weeks | 150mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | 70ns | 30 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 100V | N-Channel | 4500pF @ 25V | 15m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF510S | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 100V | 5.6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | 43W | D2PAK | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 3.7W Ta 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 94-4796 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 55V | 180W Tc | N-Channel | 3210pF @ 25V | 11m Ω @ 43A, 10V | 4V @ 250μA | 85A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF610S | Vishay Siliconix | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf610spbf-datasheets-3266.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | 1 | Single | D2PAK | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 3W Ta 36W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ34E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz34e-datasheets-8205.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 68W Tc | TO-220AB | 28A | 100A | 0.042Ohm | 65 mJ | N-Channel | 680pF @ 25V | 42m Ω @ 17A, 10V | 4V @ 250μA | 28A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| 94-4582 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 3.8W Ta 110W Tc | P-Channel | 1200pF @ 25V | 60mOhm @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FB180SA10 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 100V | 180A | SOT-227-4, miniBLOC | 38.3mm | 12.3mm | 25.7mm | Contains Lead | 4 | SOT-227 | 10.7nF | 45 ns | 351ns | 181 ns | 180A | 20V | 100V | 480W Tc | 6.5mOhm | N-Channel | 10700pF @ 25V | 6.5mOhm @ 108A, 10V | 4V @ 250μA | 180A Tc | 380nC @ 10V | 6.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP360 | Vishay Siliconix | $0.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp360pbf-datasheets-4363.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 38.000013g | 3 | 1 | Single | TO-247-3 | 4.5nF | 18 ns | 79ns | 67 ns | 100 ns | 23A | 20V | 400V | 280W Tc | 200mOhm | 400V | N-Channel | 4500pF @ 25V | 200mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 210nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFH58N20Q | IXYS | $3.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/ixys-ixfh58n20q-datasheets-8100.pdf | 200V | 58A | TO-247-3 | Lead Free | 3 | 8 Weeks | 40MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 40ns | 13 ns | 40 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 1000 mJ | 200V | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFH40N30Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-ixfh40n30q-datasheets-8102.pdf | 300V | 40A | TO-247-3 | Lead Free | 3 | 8 Weeks | 80MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 35ns | 12 ns | 40 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 160A | 1000 mJ | 300V | N-Channel | 3100pF @ 25V | 80m Ω @ 500mA, 10V | 4V @ 4mA | 40A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2SK3044 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3044-datasheets-8104.pdf | 450V | 8A | TO-220-3 Full Pack | 3 | no | unknown | 8541.29.00.95 | SINGLE | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2W Ta 40W Tc | TO-220AB | 7A | 14A | 0.75Ohm | 130 mJ | N-Channel | 1300pF @ 20V | 750m Ω @ 4A, 10V | 5V @ 1mA | 7A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL5602S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl5602s-datasheets-8106.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 75W Tc | P-Channel | 1460pF @ 15V | 42m Ω @ 12A, 4.5V | 1V @ 250μA | 24A Tc | 44nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG50 | Vishay Siliconix | $2.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpg50pbf-datasheets-4430.pdf | 1kV | 6.1A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 38.000013g | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.8nF | 19 ns | 35ns | 36 ns | 130 ns | 6.1A | 20V | 1000V | 190W Tc | 2Ohm | 1kV | N-Channel | 2800pF @ 25V | 2Ohm @ 3.6A, 10V | 4V @ 250μA | 6.1A Tc | 190nC @ 10V | 2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFH32N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixft30n50-datasheets-4425.pdf | 500V | 32A | TO-247-3 | Lead Free | 3 | No SVHC | 150mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | 42ns | 26 ns | 110 ns | 32A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 360W Tc | 250 ns | 500V | N-Channel | 5700pF @ 25V | 4 V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFN36N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn36n100-datasheets-8118.pdf | 1kV | 36A | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 4 Weeks | 46g | No SVHC | 240mOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 41 ns | 55ns | 30 ns | 110 ns | 36A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 5V | 700W Tc | 4000 mJ | 1kV | N-Channel | 9200pF @ 25V | 5 V | 240m Ω @ 500mA, 10V | 5V @ 8mA | 36A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IRL3502S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 20V | 140W Tc | N-Channel | 4700pF @ 15V | 7m Ω @ 64A, 7V | 700mV @ 250μA | 110A Tc | 110nC @ 4.5V | 4.5V 7V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX180N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfx180n10-datasheets-8126.pdf | 100V | 180A | TO-247-3 | Lead Free | 3 | 8 Weeks | 8MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 90ns | 65 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 720A | 100V | N-Channel | 10900pF @ 25V | 8m Ω @ 90A, 10V | 4V @ 8mA | 180A Tc | 390nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRLIZ34N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-220-3 Full Pack | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 55V | 55V | 37W Tc | TO-220AB | 22A | 110A | 0.046Ohm | 110 mJ | N-Channel | 880pF @ 25V | 35m Ω @ 12A, 10V | 2V @ 250μA | 22A Tc | 25nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU3103 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | NO | SINGLE | 245 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 107W Tc | 20A | 220A | 0.019Ohm | 240 mJ | N-Channel | 1600pF @ 25V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9210 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Single | 2.5W | D-Pak | 170pF | 12ns | 13 ns | 11 ns | 1.9A | 20V | 200V | 2.5W Ta 25W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI740G | Vishay Siliconix | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi740gpbf-datasheets-1223.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.37nF | 14 ns | 25ns | 24 ns | 54 ns | 5.4A | 20V | 400V | 40W Tc | 550mOhm | 400V | N-Channel | 1370pF @ 25V | 550mOhm @ 3.2A, 10V | 4V @ 250μA | 5.4A Tc | 66nC @ 10V | 550 mΩ | 10V | ±20V |
