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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLMS6702TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlms6702tr-datasheets-8067.pdf | SOT-23-6 | 6 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.3A | 13A | 0.2Ohm | P-Channel | 210pF @ 15V | 200m Ω @ 1.6A, 4.5V | 700mV @ 250μA | 2.4A Ta | 8.8nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDB603AL | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndp603al-datasheets-7607.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 30V | 50W Tc | N-Channel | 1100pF @ 15V | 22mOhm @ 25A, 10V | 3V @ 250μA | 25A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX15N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfx15n100-datasheets-8076.pdf | 1kV | 15A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 30ns | 30 ns | 120 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 360W Tc | 60A | 0.7Ohm | 1kV | N-Channel | 4500pF @ 25V | 700m Ω @ 7.5A, 10V | 4.5V @ 4mA | 15A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7403TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 2.5W Ta | MS-012AA | 6.7A | 0.022Ohm | N-Channel | 1200pF @ 25V | 22m Ω @ 4A, 10V | 1V @ 250μA | 8.5A Ta | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7421D1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | 8-SOIC (0.154, 3.90mm Width) | 30V | 2W Ta | N-Channel | 510pF @ 25V | 35m Ω @ 4.1A, 10V | 1V @ 250μA | 5.8A Ta | 27nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM64N02XTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxm64n02xta-datasheets-8008.pdf | 20V | 5.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Lead Free | 8 | 139.989945mg | No SVHC | 40mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1.8W | 1 | FET General Purpose Power | 5.7 ns | 9.6ns | 9.6 ns | 28.3 ns | 5.4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1W Ta | 20V | N-Channel | 1100pF @ 15V | 40m Ω @ 3.8A, 4.5V | 700mV @ 250μA | 5.4A Ta | 16nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| 94-4007 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 30V | 68W Tc | N-Channel | 870pF @ 25V | 31m Ω @ 21A, 10V | 1V @ 250μA | 35A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN180N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfn180n20-datasheets-8096.pdf | 200V | 180A | SOT-227-4, miniBLOC | 4 | 46g | No SVHC | 10MOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 2.5kV | 85ns | 56 ns | 180 ns | 180A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 700W Tc | 720A | 4000 mJ | 200V | N-Channel | 22000pF @ 25V | 4 V | 10m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 660nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX120N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfx120n20-datasheets-8098.pdf | 200V | 120A | TO-247-3 | Lead Free | 3 | 8 Weeks | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 120A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRLR3103 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 107W Tc | TO-252AA | 20A | 220A | 0.019Ohm | 240 mJ | N-Channel | 1600pF @ 25V | 19m Ω @ 33A, 10V | 1V @ 250μA | 55A Tc | 50nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL4310TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | /files/infineontechnologies-irfl4310tr-datasheets-7767.pdf | TO-261-4, TO-261AA | 4 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1W | 100V | 100V | 1.6A | 0.2Ohm | N-Channel | 330pF @ 25V | 200m Ω @ 1.6A, 10V | 4V @ 250μA | 1.6A Ta | 25nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLMS5703TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | SOT-23-6 | 6 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.3A | 13A | 0.2Ohm | P-Channel | 170pF @ 25V | 200m Ω @ 1.6A, 10V | 1V @ 250μA | 2.3A Ta | 11nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI520N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 Full Pack | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 30W Tc | TO-220AB | 8.1A | 35A | 0.22Ohm | 85 mJ | N-Channel | 440pF @ 25V | 180m Ω @ 6A, 10V | 2V @ 250μA | 8.1A Tc | 20nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH26N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixft24n50q-datasheets-4238.pdf | 500V | 26A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | Unknown | 200mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 30ns | 16 ns | 55 ns | 26A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 250 ns | 500V | N-Channel | 3900pF @ 25V | 4.5 V | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 94-2386 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 3.8W Ta 94W Tc | N-Channel | 1470pF @ 25V | 17.5mOhm @ 25A, 10V | 4V @ 250μA | 49A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44ES | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 110W Tc | 48A | 192A | 0.023Ohm | 220 mJ | N-Channel | 1360pF @ 25V | 23m Ω @ 29A, 10V | 4V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP150N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | /files/infineontechnologies-irfp150n-datasheets-8002.pdf | TO-247-3 | 3 | EAR99 | AVALANCHE RATED, FAST SWITCHING | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 160W Tc | TO-247AC | 42A | 140A | 0.036Ohm | 420 mJ | N-Channel | 1900pF @ 25V | 36m Ω @ 23A, 10V | 4V @ 250μA | 42A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM64N03XTA | Diodes Incorporated | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxm64n03xta-datasheets-8010.pdf | 30V | 5.7A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 3.1mm | 950μm | 3.1mm | Contains Lead, Lead Free | 8 | 139.989945mg | EAR99 | LOW THRESHOLD | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 40 | 1.1W | 1 | Not Qualified | S-PDSO-G8 | 4.2 ns | 4.5ns | 4.5 ns | 20.5 ns | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1W Ta | 5A | 0.045Ohm | 30V | N-Channel | 950pF @ 25V | 45m Ω @ 3.7A, 10V | 1V @ 250μA | 5A Ta | 27nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| 2SK3047 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3047-datasheets-8012.pdf | 800V | 2A | TO-220-3 Full Pack | Contains Lead | 3 | unknown | 8541.29.00.95 | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 20ns | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2W Ta 30W Tc | TO-220AB | 2A | 4A | 7Ohm | 15 mJ | N-Channel | 350pF @ 20V | 7 Ω @ 1A, 10V | 5V @ 1mA | 2A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFI530N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 Full Pack | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 41W Tc | TO-220AB | 12A | 60A | 0.11Ohm | 150 mJ | N-Channel | 640pF @ 25V | 110m Ω @ 6.6A, 10V | 4V @ 250μA | 12A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM63N02E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 20V | 3.2A | SOT-23-6 | Contains Lead | 6 | 2W | SOT-23-6 | 460pF | 3.2A | 20V | N-Channel | 100 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDS356P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nds356p-datasheets-7654.pdf | -20V | -1.1A | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | Single | 500mW | 17ns | 17 ns | 56 ns | 1.1A | 12V | 500mW Ta | 20V | P-Channel | 180pF @ 10V | 210m Ω @ 1.3A, 10V | 2.5V @ 250μA | 1.1A Ta | 5nC @ 5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML2402TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlml2402tr-datasheets-8021.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | HIGH RELIABILITY | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 150°C | -55°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 0.54W | 20V | 20V | TO-236AB | 1.2A | 0.25Ohm | N-Channel | 110pF @ 15V | 250m Ω @ 930mA, 4.5V | 700mV @ 250μA | 1.2A Ta | 3.9nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||
| ZXM62N03E6TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxm62n03e6ta-datasheets-8028.pdf | 30V | 3.2A | SOT-23-6 | Contains Lead | 6 | 14.996898mg | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) | 1.1W | DUAL | GULL WING | 260 | 6 | 1 | 30 | 1.1W | 1 | Not Qualified | R-PDSO-G6 | 2.9 ns | 5.6ns | 5.6 ns | 11.7 ns | 3.2A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | N-Channel | 380pF @ 25V | 110m Ω @ 2.2A, 10V | 1V @ 250μA | 3.2A Ta | 9.6nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF3415S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 3.8W Ta 200W Tc | 43A | 150A | 0.042Ohm | 590 mJ | N-Channel | 2400pF @ 25V | 42m Ω @ 22A, 10V | 4V @ 250μA | 43A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2002 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 200W Tc | 140A | 470A | 0.006Ohm | 610 mJ | N-Channel | 5000pF @ 25V | 6m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDB4050 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndb4050-datasheets-7801.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 50V | 50W Tc | N-Channel | 450pF @ 25V | 100mOhm @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI1310N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 Full Pack | 3 | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 56W Tc | TO-220AB | 24A | 140A | 0.036Ohm | 420 mJ | N-Channel | 1900pF @ 25V | 36m Ω @ 13A, 10V | 4V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI530N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | TO-220-3 Full Pack | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 41W Tc | TO-220AB | 12A | 60A | 0.12Ohm | 150 mJ | N-Channel | 800pF @ 25V | 100m Ω @ 9A, 10V | 2V @ 250μA | 12A Tc | 34nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3303S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 3.8W Ta 68W Tc | N-Channel | 870pF @ 25V | 26mOhm @ 20A, 10V | 1V @ 250μA | 38A Tc | 26nC @ 4.5V | 4.5V 10V | ±16V |
