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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9523-75A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk952375a127-datasheets-6086.pdf | TO-220-3 | 3 | EAR99 | unknown | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 138W Tc | TO-220AB | 53A | 213A | 0.026Ohm | 120 mJ | N-Channel | 3120pF @ 25V | 22m Ω @ 25A, 10V | 2V @ 1mA | 53A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||
| BUK714R1-40BT,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchPLUS | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/nexperiausainc-buk714r140bt118-datasheets-6031.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 38 ns | 82ns | 90 ns | 141 ns | 187A | 20V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 748A | 40V | N-Channel | 6808pF @ 25V | 4.1m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 83nC @ 10V | Temperature Sensing Diode | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BUK7535-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7535100a127-datasheets-6035.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | NO | 3 | Single | 149W | 1 | FET General Purpose Power | 15 ns | 67ns | 35 ns | 56 ns | 41A | 20V | 100V | SILICON | DRAIN | SWITCHING | 149W Tc | TO-220AB | 165A | 110 mJ | 100V | N-Channel | 2535pF @ 25V | 35m Ω @ 25A, 10V | 4V @ 1mA | 41A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK9510-55A,127 | NXP USA Inc. | $4.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk951055a127-datasheets-6040.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | TO-220AB | 75A | 400A | 0.011Ohm | 333 mJ | N-Channel | 4307pF @ 25V | 9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 68nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||
| BUK9907-40ATC,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk990740atc127-datasheets-6044.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | Tin | No | e3 | NO | 5 | Single | 272W | 1 | FET General Purpose Power | 3 μs | 10μs | 11 μs | 17 μs | 140A | 15V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 0.0077Ohm | 1400 mJ | 40V | N-Channel | 5836pF @ 25V | 6.5m Ω @ 50A, 10V | 2V @ 1mA | 75A Tc | Temperature Sensing Diode | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||
| BUK9509-75A,127 | NXP USA Inc. | $5.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk960975a118-datasheets-8960.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | TO-220AB | 75A | 440A | 0.00995Ohm | 562 mJ | N-Channel | 8840pF @ 25V | 8.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tj | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||
| PHK28NQ03LT,518 | NXP USA Inc. | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phk28nq03lt518-datasheets-6054.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | 8541.29.00.75 | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 6.25W Tc | MS-012 | 23.7A | 0.0065Ohm | N-Channel | 2800pF @ 20V | 6.5m Ω @ 14A, 10V | 2V @ 1mA | 23.7A Tc | 30.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BUK652R0-30C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 30V | 306W Tc | N-Channel | 14964pF @ 25V | 2.2m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 229nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9575-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/nexperiausainc-buk9575100a127-datasheets-6062.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 99W Tc | TO-220AB | 23A | 91A | 0.084Ohm | 100 mJ | N-Channel | 1704pF @ 25V | 72m Ω @ 10A, 10V | 2V @ 1mA | 23A Tc | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| BUK652R1-30C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 30V | 263W Tc | N-Channel | 10918pF @ 25V | 2.4m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 168nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK755R2-40B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk755r240b127-datasheets-6069.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | e3 | NO | 3 | Single | 203W | 1 | FET General Purpose Power | 15 ns | 51ns | 56 ns | 81 ns | 143A | 20V | 40V | SILICON | DRAIN | SWITCHING | 203W Tc | TO-220AB | 75A | 0.0052Ohm | 494 mJ | 40V | N-Channel | 3789pF @ 25V | 5.2m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STP26NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb26nm60nd-datasheets-1560.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 329.988449mg | 3 | EAR99 | No | STP26N | 1 | Single | 190W | 1 | 22 ns | 14.5ns | 27.5 ns | 69 ns | 21A | 25V | SILICON | DRAIN | SWITCHING | 600V | 600V | 190W Tc | TO-220AB | 84A | N-Channel | 1817pF @ 100V | 175m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 54.6nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| STFI5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi5n80k5-datasheets-0935.pdf | TO-262-3 Full Pack, I2Pak | STFI5N | 800V | 20W Tc | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 5.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7880-55A,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/nexperiausainc-buk788055acux-datasheets-0975.pdf | TO-261-4, TO-261AA | 4 | 2013-06-14 00:00:00 | 55V | 8W Tc | N-Channel | 500pF @ 25V | 80m Ω @ 10A, 10V | 4V @ 1mA | 7A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK652R6-40C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk652r640c127-datasheets-6015.pdf | TO-220-3 | 3 | 2013-06-14 00:00:00 | 40V | 263W Tc | N-Channel | 11334pF @ 25V | 2.7m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 199nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN34LN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn34ln135-datasheets-6021.pdf | SC-74, SOT-457 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.75W Tc | 5.7A | 0.034Ohm | N-Channel | 500pF @ 20V | 34m Ω @ 2.5A, 10V | 2V @ 1mA | 5.7A Tc | 13.1nC @ 10V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| BUK9510-100B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/nexperiausainc-buk9510100b127-datasheets-5969.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 60 ns | 110ns | 94 ns | 250 ns | 75A | 15V | 100V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 629 mJ | 100V | N-Channel | 11045pF @ 25V | 9.7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 86nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||
| BUK652R3-40C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk652r340c127-datasheets-6029.pdf | TO-220-3 | 3 | 2013-06-14 00:00:00 | 40V | 306W Tc | N-Channel | 15100pF @ 25V | 2.3m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 260nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK794R1-40BT,127 | NXP USA Inc. | $5.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchPLUS | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | TO-220-5 | 5 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 5 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 272W Tc | 75A | 748A | 0.0041Ohm | 1500 mJ | N-Channel | 6808pF @ 25V | 4.1m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 83nC @ 10V | Temperature Sensing Diode | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STH290N4F6-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2 | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | STH290 | 175°C | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 180A | 720A | 0.0017Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL23NS3LLH7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl23ns3llh7-datasheets-0916.pdf | 8-PowerVDFN | 5 | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL23 | NOT SPECIFIED | 1 | R-PDSO-F5 | 92A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.9W Ta 50W Tc | 0.005Ohm | N-Channel | 2100pF @ 15V | 3.7m Ω @ 11.5A, 10V | 2.3V @ 1mA | 92A Tc | 13.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN7R0-100ES,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/nexperiausainc-psmn7r0100es127-datasheets-5979.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 20 Weeks | 3 | No | 3 | Single | 269W | 34.6 ns | 45.6ns | 49.5 ns | 103.9 ns | 100A | 20V | 100V | 269W Tc | 90V | N-Channel | 6686pF @ 50V | 6.8m Ω @ 15A, 10V | 4V @ 1mA | 100A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMG302PU-7 | Diodes Incorporated | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg302pu13-datasheets-7749.pdf | TO-236-3, SC-59, SOT-23-3 | 7 Weeks | 7.994566mg | EAR99 | e3 | Matte Tin (Sn) | 260 | 1 | Single | 30 | 4.5 ns | 2.3ns | 11 ns | 24.1 ns | 170mA | -4.5V | 25V | 330mW | P-Channel | 27.2pF @ 10V | 10 Ω @ 200mA, 4.5V | 1.5V @ 250μA | 170mA Ta | 0.35nC @ 4.5V | 2.7V 4.5V | -8V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK6E3R2-55C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk6e3r255c127-datasheets-5987.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 306W | 61 ns | 101ns | 186 ns | 450 ns | 120A | 20V | 55V | 306W Tc | 55V | N-Channel | 15300pF @ 25V | 3.2m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 258nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK664R8-75C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/nexperiausainc-buk664r875c118-datasheets-5990.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Tin | not_compliant | 3 | 32.6 ns | 65ns | 141 ns | 365 ns | 120A | 16V | 75V | 263W Tc | N-Channel | 11400pF @ 25V | 5m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 177nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7907-55ATE,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/nexperiausainc-buk790755ate127-datasheets-5994.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | Tin | No | e3 | NO | 5 | Single | 272W | 1 | FET General Purpose Power | 36 ns | 115ns | 111 ns | 159 ns | 140A | 20V | 55V | SILICON | DRAIN | SWITCHING | 272W Tc | 0.007Ohm | 460 mJ | 55V | N-Channel | 4500pF @ 25V | 7m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 116nC @ 10V | Temperature Sensing Diode | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BUK6E4R0-75C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk6e4r075c127-datasheets-5997.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | not_compliant | 3 | 1 | 52 ns | 81ns | 156 ns | 412 ns | 120A | 16V | 75V | 306W Tc | N-Channel | 15450pF @ 25V | 4.2m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 234nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK663R5-55C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk663r555c118-datasheets-6001.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | not_compliant | 3 | 55V | 263W Tc | N-Channel | 11516pF @ 25V | 3.4m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 191nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHK31NQ03LT,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/nexperiausainc-phk31nq03lt518-datasheets-5935.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 260 | 8 | Single | 30 | 6.9W | 1 | FET General Purpose Power | 37 ns | 62ns | 26 ns | 54 ns | 30.4A | 20V | 30V | SILICON | 6.9W Tc | 0.0075Ohm | 30V | N-Channel | 4235pF @ 12V | 4.4m Ω @ 25A, 10V | 2.15V @ 1mA | 30.4A Tc | 33nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK98180-100A,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk98180100acux-datasheets-2874.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 8W Tc | 4.6A | 18A | 0.201Ohm | 16 mJ | N-Channel | 619pF @ 25V | 173m Ω @ 5A, 10V | 2V @ 1mA | 4.6A Tc | 4.5V 10V | ±10V |
