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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK7908-40AIE,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/nexperiausainc-buk790840aie127-datasheets-6832.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | Tin | No | e3 | NO | 5 | Single | 221W | 1 | FET General Purpose Power | 19 ns | 76ns | 122 ns | 121 ns | 117A | 20V | 40V | SILICON | DRAIN | 221W Tc | 468A | 0.008Ohm | 630 mJ | 40V | N-Channel | 3140pF @ 25V | 8m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 84nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||
| PSMN9R0-30YL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | SC-100, SOT-669 | 4 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 46W Tc | MO-235 | 55A | 223A | 0.0138Ohm | 16 mJ | N-Channel | 1006pF @ 12V | 8m Ω @ 15A, 10V | 2.15V @ 1mA | 61A Tc | 17.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| BUK9880-55A,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-buk988055acux-datasheets-3856.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8W Tc | 7A | 30A | 0.089Ohm | 36 mJ | N-Channel | 584pF @ 25V | 73m Ω @ 8A, 10V | 2V @ 1mA | 7A Tc | 11nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||
| BUK7515-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk7515100a127-datasheets-6859.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 35 ns | 85ns | 70 ns | 150 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 240A | 100V | N-Channel | 6000pF @ 25V | 15m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||
| BUK753R1-40B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | TO-220AB | 75A | 902A | 0.0031Ohm | 1600 mJ | N-Channel | 6808pF @ 25V | 3.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| PH6325L,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-ph6325l115-datasheets-6821.pdf | SC-100, SOT-669 | 4 | 4 | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | 78.7A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 62.5W Tc | MO-235 | 236A | 0.0095Ohm | 115 mJ | N-Channel | 1871pF @ 12V | 6.3m Ω @ 25A, 10V | 2V @ 1mA | 78.7A Tc | 13.3nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| SI2304DS,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-si2304ds215-datasheets-6708.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 830mW | 1 | FET General Purpose Power | Not Qualified | 1.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 830mW Tc | 0.19Ohm | 56 pF | N-Channel | 195pF @ 10V | 117m Ω @ 500mA, 10V | 2V @ 1mA | 1.7A Tc | 4.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| 2N7002PT,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-2n7002pt115-datasheets-6763.pdf | SC-75, SOT-416 | e3 | Tin (Sn) | YES | 3 | FET General Purpose Power | Single | 60V | 250mW Ta | 0.31A | N-Channel | 50pF @ 10V | 1.6 Ω @ 500mA, 10V | 2.4V @ 250μA | 310mA Ta | 0.8nC @ 4.5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMF3800SN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | SC-70, SOT-323 | 3 | 2013-06-14 00:00:00 | 60V | 560mW Tc | N-Channel | 40pF @ 10V | 4.5 Ω @ 500mA, 10V | 3.3V @ 1mA | 260mA Ta | 0.85nC @ 10V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHB146NQ06LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb146nq06lt118-datasheets-6781.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 55V | 250W Tc | N-Channel | 5675pF @ 25V | 5.4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSH112,235 | NXP USA Inc. | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Tc | TO-236AB | 0.3A | 5Ohm | 10 pF | N-Channel | 40pF @ 10V | 5 Ω @ 500mA, 10V | 2V @ 1mA | 300mA Ta | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||
| PSMN050-80PS,127 | NXP USA Inc. | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn05080ps127-datasheets-6784.pdf | TO-220-3 | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | Single | 80V | 56W Tc | 22A | N-Channel | 633pF @ 12V | 51m Ω @ 10A, 10V | 4V @ 1mA | 22A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2N7002F,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | /files/nexperiausainc-2n7002f215-datasheets-6809.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.21.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | 475mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Ta | 0.475A | 2Ohm | 10 pF | N-Channel | 50pF @ 10V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 475mA Ta | 0.69nC @ 10V | 4.5V 10V | ±30V | ||||||||||||||||||||||||||||
| PH3830L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph3830l115-datasheets-6807.pdf | SC-100, SOT-669 | 4 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 235 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 62.5W Tc | MO-235 | 98A | 290A | 0.0049Ohm | 250 mJ | N-Channel | 3190pF @ 10V | 3.8m Ω @ 25A, 10V | 2V @ 1mA | 98A Tc | 33nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||
| BUK7E07-55B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7e0755b127-datasheets-6824.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | 3 | 2013-06-14 00:00:00 | 55V | 203W Tc | N-Channel | 3760pF @ 25V | 7.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 53nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7207-30B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~185°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-buk720730b118-datasheets-6705.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 167W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 85ns | 76 ns | 55 ns | 112A | 20V | 30V | SILICON | DRAIN | SWITCHING | 167W Tc | TO-252AA | 75A | 425A | 0.007Ohm | 30V | N-Channel | 2245pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||
| BUK6240-75C,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk624075c118-datasheets-6639.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 75V | 60W Tc | N-Channel | 1280pF @ 25V | 46m Ω @ 10A, 10V | 2.8V @ 1mA | 22A Tc | 21.4nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN035-150P,127 | Nexperia USA Inc. | $4.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2009 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn035150p127-datasheets-6721.pdf | TO-220-3 | 3 | 20 Weeks | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 250W Tc | TO-220AB | 50A | 200A | 0.035Ohm | 460 mJ | N-Channel | 4720pF @ 25V | 35m Ω @ 25A, 10V | 4V @ 1mA | 50A Tc | 79nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| BSN20,215 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-bsn20215-datasheets-6726.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 830mW Tc | 0.173A | 20Ohm | 8 pF | N-Channel | 25pF @ 10V | 15 Ω @ 100mA, 10V | 1V @ 1mA | 173mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PHT8N06LT,135 | NXP USA Inc. | $1.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-pht8n06lt135-datasheets-6732.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 8.3W Tc | 2.2A | 40A | 0.08Ohm | 30 mJ | N-Channel | 650pF @ 25V | 80m Ω @ 5A, 5V | 2V @ 1mA | 3.5A Ta | 11.2nC @ 5V | 5V | ±13V | ||||||||||||||||||||||||||
| PMN34UN,135 | NXP USA Inc. | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn34un135-datasheets-6745.pdf | SC-74, SOT-457 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.75W Tc | 4.9A | 0.054Ohm | N-Channel | 790pF @ 25V | 46m Ω @ 2A, 4.5V | 700mV @ 1mA | 4.9A Tc | 9.9nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| PH2625L,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-ph2625l115-datasheets-6749.pdf | SC-100, SOT-669 | Lead Free | 4 | 5 | EAR99 | No | e3 | Tin (Sn) | 62.5W | SINGLE | GULL WING | 4 | 62.5W | 1 | R-PSSO-G4 | 41 ns | 52ns | 30 ns | 67 ns | 100A | 20V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300A | 25V | N-Channel | 4308pF @ 12V | 2.8m Ω @ 25A, 10V | 2V @ 1mA | 100A Tc | 32nC @ 4.5V | |||||||||||||||||||||||||||||
| PH5525L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph5525l115-datasheets-6674.pdf | SC-100, SOT-669 | 4 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 62.5W Tc | MO-235 | 81.7A | 300A | 0.0082Ohm | 100 mJ | N-Channel | 2150pF @ 12V | 5.5m Ω @ 25A, 10V | 2.15V @ 1mA | 81.7A Tc | 16.6nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| BUK9618-55A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk961855a118-datasheets-6667.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 136W Tc | 61A | 246A | 0.019Ohm | 127 mJ | N-Channel | 2210pF @ 25V | 16m Ω @ 25A, 10V | 2V @ 1mA | 61A Tc | 34nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||
| BUK9506-55B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk960655b118-datasheets-8296.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 258W Tc | TO-220AB | 75A | 587A | 0.0064Ohm | 679 mJ | N-Channel | 7565pF @ 25V | 5.4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||
| BUK9518-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk951855a127-datasheets-6684.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 136W Tc | TO-220AB | 61A | 246A | 0.019Ohm | 127 mJ | N-Channel | 2210pF @ 25V | 16m Ω @ 25A, 10V | 2V @ 1mA | 61A Tc | 34nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||
| BUK9623-75A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk962375a118-datasheets-6686.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 138W Tc | 53A | 213A | 0.026Ohm | 120 mJ | N-Channel | 3120pF @ 25V | 22m Ω @ 25A, 10V | 2V @ 1mA | 53A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||
| BUK7C08-55AITE,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7c0855aite118-datasheets-6689.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 12 Weeks | 7 | EAR99 | Tin | No | e3 | YES | GULL WING | 245 | 7 | Single | 30 | 272W | 1 | R-PSSO-G6 | 35 ns | 115ns | 110 ns | 155 ns | 130A | 20V | 55V | SILICON | DRAIN | SWITCHING | 272W Tc | 522A | 0.008Ohm | 460 mJ | 55V | N-Channel | 4200pF @ 25V | 8m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 116nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||
| BUK7620-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk7620100a118-datasheets-6693.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 200W | 1 | R-PSSO-G2 | 21 ns | 87ns | 56 ns | 108 ns | 63A | 20V | 100V | SILICON | DRAIN | SWITCHING | 200W Tc | 0.02Ohm | 400 mJ | 100V | N-Channel | 4373pF @ 25V | 20m Ω @ 25A, 10V | 4V @ 1mA | 63A Tc | 10V | ±20V | ||||||||||||||||||||||||
| BUK662R5-30C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk662r530c118-datasheets-3804.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 3 | Tin | not_compliant | 3 | Single | 204W | 22 ns | 59ns | 113 ns | 209 ns | 100A | 20V | 30V | 204W Tc | 30V | N-Channel | 6960pF @ 25V | 2.8m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 114nC @ 10V | 10V | ±16V |
