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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK98150-55A,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-buk9815055acuf-datasheets-6521.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8W Tc | 5.5A | 22A | 0.161Ohm | 22 mJ | N-Channel | 320pF @ 25V | 137m Ω @ 5A, 10V | 2V @ 1mA | 5.5A Tc | 5.3nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| BUK9520-100A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | /files/nexperiausainc-buk9520100a127-datasheets-6474.pdf | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 200W Tc | TO-220AB | 63A | 253A | 0.022Ohm | 420 mJ | N-Channel | 6385pF @ 25V | 19m Ω @ 25A, 10V | 2V @ 1mA | 63A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| PSMN9R0-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn9r030ll115-datasheets-6479.pdf | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 50W Tc | 21A | N-Channel | 1193pF @ 15V | 9m Ω @ 5A, 10V | 2.15V @ 1mA | 21A Tc | 20.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF3LN62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu3ln62k3-datasheets-4334.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 3Ohm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | STF3LN | 3 | Single | 20W | 1 | 9 ns | 7ns | 27 ns | 30 ns | 2.5A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 20W Tc | TO-220AB | 90 mJ | 620V | N-Channel | 386pF @ 50V | 3 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STH400N4F6-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth400n4f66-datasheets-1044.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 1.59999g | 7 | EAR99 | No | STH400 | 1 | Single | FET General Purpose Powers | 71 ns | 184ns | 168 ns | 168 ns | 180A | 20V | 40V | 300W Tc | N-Channel | 20500pF @ 25V | 1.15m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 404nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9520-55A,127 | NXP USA Inc. | $2.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk952055a127-datasheets-6361.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 118W Tc | TO-220AB | 54A | 217A | 0.021Ohm | 115 mJ | N-Channel | 2210pF @ 25V | 18m Ω @ 25A, 10V | 2V @ 1mA | 54A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| BUK9610-55A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 100A | 400A | 0.011Ohm | 333 mJ | N-Channel | 4307pF @ 25V | 9m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 68nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN3R2-25YLC,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 25V | 79W Tc | N-Channel | 1781pF @ 12V | 3.4m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH3330L,115 | NXP USA Inc. | $2.97 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | SC-100, SOT-669 | 4 | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 62.5W Tc | 100A | 300A | 0.0033Ohm | 245 mJ | N-Channel | 4840pF @ 12V | 3.3m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 30.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN3R7-30YLC,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 30V | 79W Tc | N-Channel | 1848pF @ 15V | 3.95m Ω @ 20A, 10V | 1.95V @ 1mA | 100A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN035-150B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/nexperiausainc-psmn035150b118-datasheets-6229.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 16 Weeks | 35MOhm | 3 | No | Single | 250W | D2PAK | 4.72nF | 25 ns | 138ns | 93 ns | 79 ns | 50A | 20V | 150V | 150V | 250W Tc | 35mOhm | 150V | N-Channel | 4720pF @ 25V | 35mOhm @ 25A, 10V | 4V @ 1mA | 50A Tc | 79nC @ 10V | 35 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK7E04-40A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/nexperiausainc-buk7e0440a127-datasheets-6319.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | No | 3 | Single | 300W | 33 ns | 110ns | 76 ns | 151 ns | 198A | 20V | 40V | 300W Tc | 40V | N-Channel | 5730pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 117nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP030,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-bsp030115-datasheets-6233.pdf | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 4.535924g | No SVHC | 30MOhm | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 4 | Single | 40 | 8.3W | 1 | FET General Purpose Power | 8 ns | 10ns | 20 ns | 18 ns | 10A | 20V | 30V | SILICON | DRAIN | SWITCHING | 2V | 8.3W Tc | 30V | N-Channel | 770pF @ 24V | 2 V | 30m Ω @ 5A, 10V | 2.8V @ 1mA | 10A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| BUK9512-55B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk951255b127-datasheets-6329.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 157W | 1 | FET General Purpose Power | 19 ns | 101ns | 75 ns | 96 ns | 79A | 15V | 55V | SILICON | DRAIN | SWITCHING | 157W Tc | TO-220AB | 75A | 55V | N-Channel | 3693pF @ 25V | 10m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 31nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| BUK752R3-40C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk752r340c127-datasheets-6333.pdf | TO-220-3 | 3 | 40V | 333W Tc | N-Channel | 11323pF @ 25V | 2.3m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 175nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN25EN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/nxpusainc-pmn25en115-datasheets-6338.pdf | SC-74, SOT-457 | 6 | 2013-06-14 00:00:00 | 30V | 540mW Ta 6.25W Tc | N-Channel | 492pF @ 15V | 23m Ω @ 6.2A, 10V | 2.5V @ 250μA | 6.2A Ta | 11nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7909-75AIE,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/nexperiausainc-buk790975aie127-datasheets-6342.pdf | TO-220-5 | 5 | 12 Weeks | 5 | EAR99 | No | e3 | Tin (Sn) | NO | 5 | Single | 272W | 1 | FET General Purpose Power | 35 ns | 108ns | 100 ns | 185 ns | 120A | 20V | 75V | SILICON | DRAIN | SWITCHING | 272W Tc | 480A | 0.009Ohm | 739 mJ | 75V | N-Channel | 4700pF @ 25V | 9m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 121nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN3R2-30YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-psmn3r230ylc115-datasheets-6348.pdf | SC-100, SOT-669 | Lead Free | 4 | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 92W | 1 | 19.5 ns | 24ns | 14 ns | 31 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 92W Tc | MO-235 | 39 mJ | 30V | N-Channel | 2081pF @ 15V | 3.5m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 29.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN3R7-25YLC,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn3r725ylc115-datasheets-6352.pdf | SC-100, SOT-669 | not_compliant | 4 | 2013-06-14 00:00:00 | 25V | 64W Tc | N-Channel | 1585pF @ 12V | 3.9m Ω @ 20A, 10V | 1.95V @ 1mA | 97A Tc | 21.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK95180-100A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk95180100a127-datasheets-6355.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 54W Tc | TO-220AB | 11A | 44A | 0.2Ohm | 1.5 mJ | N-Channel | 619pF @ 25V | 173m Ω @ 5A, 10V | 2V @ 1mA | 11A Tc | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK952R8-30B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk952r830b127-datasheets-6273.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | 3 | 4.535924g | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 300W | 1 | FET General Purpose Power | 71 ns | 222ns | 195 ns | 260 ns | 75A | 15V | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-220AB | 950A | 30V | N-Channel | 10185pF @ 25V | 2.4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 89nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||
| BUK9E06-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/nexperiausainc-buk9e0655a127-datasheets-6275.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | 3 | Single | 300W | 45 ns | 180ns | 235 ns | 420 ns | 154A | 15V | 55V | 300W Tc | 55V | N-Channel | 8600pF @ 25V | 5.8m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7509-55A,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk750955a127-datasheets-6279.pdf | TO-220-3 | compliant | 3 | 55V | 211W Tc | N-Channel | 3271pF @ 25V | 9m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6E2R3-40C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk6e2r340c127-datasheets-6292.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 306W | 1 | 60 ns | 140ns | 416 ns | 234 ns | 120A | 16V | 40V | 306W Tc | 40V | N-Channel | 15100pF @ 25V | 2.3m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 260nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PH2525L,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/nexperiausainc-ph2525l115-datasheets-6299.pdf | SC-100, SOT-669 | 5mm | 1.1mm | 4.1mm | Lead Free | 4 | 5 | EAR99 | No | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | 62.5W | 1 | FET General Purpose Power | R-PSSO-G4 | 41 ns | 92ns | 37 ns | 53 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 62.5W Tc | 300A | 0.0039Ohm | 320 mJ | 25V | N-Channel | 4470pF @ 12V | 2.5m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 34.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PMF780SN,115 | NXP USA Inc. | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmf780sn115-datasheets-6305.pdf | SC-70, SOT-323 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 560mW Tc | 0.57A | 0.92Ohm | N-Channel | 23pF @ 30V | 920m Ω @ 300mA, 10V | 2V @ 250μA | 570mA Ta | 1.05nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK7880-55,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk788055cuf-datasheets-1713.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta | 7.5A | 40A | 0.08Ohm | 85 pF | 30 mJ | N-Channel | 500pF @ 25V | 45ns | 39ns | 80m Ω @ 5A, 10V | 4V @ 1mA | 3.5A Ta | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| BUK9E3R2-40B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 100A | 888A | 0.0035Ohm | 1200 mJ | N-Channel | 10502pF @ 25V | 2.8m Ω @ 25A, 10V | 2V @ 1mA | 100A Tc | 94nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK9509-40B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk950940b127-datasheets-6247.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 157W | 1 | FET General Purpose Power | 29 ns | 106ns | 89 ns | 108 ns | 95A | 15V | 40V | SILICON | DRAIN | SWITCHING | 157W Tc | TO-220AB | 75A | 40V | N-Channel | 3600pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 32nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||
| PHD3055E,118 | NXP USA Inc. | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd3055e118-datasheets-6251.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 33W Tc | TO-252AA | 10.3A | 41A | 0.15Ohm | 25 mJ | N-Channel | 250pF @ 25V | 150m Ω @ 5.5A, 10V | 4V @ 1mA | 10.3A Tc | 5.8nC @ 10V | 10V | ±20V |
