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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9520-100B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/nexperiausainc-buk9520100b127-datasheets-6220.pdf | TO-220-3 | 3 | Tin | 3 | Single | 203W | 45 ns | 116ns | 77 ns | 173 ns | 63A | 15V | 100V | 203W Tc | 100V | N-Channel | 5657pF @ 25V | 18.5m Ω @ 25A, 10V | 2V @ 1mA | 63A Tc | 53.4nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK7513-75B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | TO-220-3 | 3 | EAR99 | compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 157W Tc | TO-220AB | 75A | 304A | 0.013Ohm | 125 mJ | N-Channel | 2644pF @ 25V | 13m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK7880-55,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk788055cuf-datasheets-1713.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta | 7.5A | 40A | 0.08Ohm | 85 pF | 30 mJ | N-Channel | 500pF @ 25V | 45ns | 39ns | 80m Ω @ 5A, 10V | 4V @ 1mA | 3.5A Ta | 10V | ±16V | ||||||||||||||||||||||||||||||
| BUK9E3R2-40B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 100A | 888A | 0.0035Ohm | 1200 mJ | N-Channel | 10502pF @ 25V | 2.8m Ω @ 25A, 10V | 2V @ 1mA | 100A Tc | 94nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||
| BUK9509-40B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/nexperiausainc-buk950940b127-datasheets-6247.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 157W | 1 | FET General Purpose Power | 29 ns | 106ns | 89 ns | 108 ns | 95A | 15V | 40V | SILICON | DRAIN | SWITCHING | 157W Tc | TO-220AB | 75A | 40V | N-Channel | 3600pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 32nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||
| PHD3055E,118 | NXP USA Inc. | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd3055e118-datasheets-6251.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 33W Tc | TO-252AA | 10.3A | 41A | 0.15Ohm | 25 mJ | N-Channel | 250pF @ 25V | 150m Ω @ 5.5A, 10V | 4V @ 1mA | 10.3A Tc | 5.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK9628-55A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nexperiausainc-buk962855a118-datasheets-6209.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 99W | 1 | R-PSSO-G2 | 14 ns | 125ns | 68 ns | 64 ns | 42A | 10V | 55V | SILICON | DRAIN | SWITCHING | 99W Tc | 57.8 mJ | 55V | N-Channel | 1725pF @ 25V | 25m Ω @ 15A, 10V | 2V @ 1mA | 42A Tc | 4.5V 5V | ±10V | |||||||||||||||||||||||||||||||||
| TPCC8002-H(TE12L,Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-tpcc8002hte12lq-datasheets-6257.pdf | 8-PowerVDFN | 8 | No | 8-TSON Advance (3.3x3.3) | 2.5nF | 2.8ns | 5.9 ns | 22A | 20V | 30V | 700mW Ta 30W Tc | N-Channel | 2500pF @ 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 22A Ta | 27nC @ 10V | 8.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK9507-30B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-buk950730b127-datasheets-6259.pdf | TO-220-3 | 3 | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | 3 | Single | 157W | 1 | FET General Purpose Power | 30 ns | 135ns | 98 ns | 99 ns | 90mA | 15V | 30V | SILICON | DRAIN | SWITCHING | 157W Tc | TO-220AB | 75A | 0.009Ohm | 30V | N-Channel | 3373pF @ 25V | 5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 32nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||
| BUK663R2-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk663r240c118-datasheets-6189.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | Tin | not_compliant | e3 | YES | GULL WING | 3 | Single | 204W | 1 | R-PSSO-G2 | 40 ns | 87ns | 117 ns | 224 ns | 100A | 20V | 40V | SILICON | DRAIN | SWITCHING | 204W Tc | 697A | 0.0057Ohm | 40V | N-Channel | 8020pF @ 25V | 3.2m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 125nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||
| PHT4NQ10LT,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 4 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 6.9W Tc | 3.5A | 0.25Ohm | N-Channel | 374pF @ 25V | 250m Ω @ 1.75A, 5V | 2V @ 1mA | 3.5A Tc | 12.2nC @ 5V | 5V | ±16V | |||||||||||||||||||||||||||||||||||||
| BUK95150-55A,127 | NXP USA Inc. | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9515055a127-datasheets-6180.pdf | TO-220-3 | 3 | EAR99 | unknown | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 53W Tc | TO-220AB | 13A | 53A | 0.161Ohm | 25 mJ | N-Channel | 339pF @ 25V | 137m Ω @ 13A, 10V | 2V @ 1mA | 13A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||
| BUK9832-55A,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk983255acux-datasheets-8903.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8W Tc | 12A | 47A | 0.036Ohm | 100 mJ | N-Channel | 1594pF @ 25V | 29m Ω @ 8A, 10V | 2V @ 1mA | 12A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||
| BUK7504-40A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk750440a127-datasheets-6088.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | TO-220AB | 75A | 794A | 0.0045Ohm | 1600 mJ | N-Channel | 5730pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 117nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| PMZ350XN,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/nexperiausainc-pmz350xn315-datasheets-6090.pdf | SC-101, SOT-883 | Lead Free | 3 | 420MOhm | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | BOTTOM | 260 | 3 | Single | 30 | 2.5W | 1 | 6.5 ns | 9.5ns | 5.5 ns | 14 ns | 1.87A | 12V | 30V | SILICON | DRAIN | SWITCHING | 2.5W Tc | 30V | N-Channel | 37pF @ 25V | 420m Ω @ 200mA, 4.5V | 1.5V @ 250μA | 1.87A Tc | 0.65nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||
| PMN55LN,135 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-pmn55ln135-datasheets-6017.pdf | SC-74, SOT-457 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.75W Tc | 4.1A | 0.065Ohm | N-Channel | 500pF @ 20V | 65m Ω @ 2.5A, 10V | 2V @ 1mA | 4.1A Tc | 13.1nC @ 10V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||
| BUK6208-40C,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk620840c118-datasheets-6093.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 40V | 128W Tc | N-Channel | 3720pF @ 25V | 6.2m Ω @ 15A, 10V | 2.8V @ 1mA | 90A Tc | 67nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN085-150K,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-psmn085150k518-datasheets-6113.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 16 Weeks | 8 | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | GULL WING | 260 | 8 | 30 | 3.5W | 1 | FET General Purpose Power | 13 ns | 17ns | 30 ns | 52 ns | 3.5A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.5W Tc | MS-012AA | 40A | 150V | N-Channel | 1310pF @ 25V | 85m Ω @ 3.5A, 10V | 4V @ 1mA | 3.5A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| BUK652R7-30C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk652r730c127-datasheets-6116.pdf | TO-220-3 | NO | 3 | FET General Purpose Power | Single | 30V | 204W Tc | 100A | N-Channel | 6960pF @ 25V | 3.3m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 114nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMF280UN,115 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-pmf280un115-datasheets-6119.pdf | SC-70, SOT-323 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 560mW Tc | 1.02A | 0.34Ohm | N-Channel | 45pF @ 20V | 340m Ω @ 200mA, 4.5V | 1V @ 250μA | 1.02A Tc | 0.89nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| BUK9508-55B,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-buk960855b118-datasheets-7241.pdf | TO-220-3 | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | NO | 3 | Single | 203W | 1 | FET General Purpose Power | 29 ns | 123ns | 86 ns | 131 ns | 110A | 15V | 55V | SILICON | DRAIN | SWITCHING | 203W Tc | TO-220AB | 75A | 55V | N-Channel | 5280pF @ 25V | 7m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 45nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||
| BUK6E3R4-40C,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | /files/nexperiausainc-buk6e3r440c127-datasheets-6130.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 204W | 40 ns | 87ns | 117 ns | 224 ns | 100A | 20V | 40V | 204W Tc | 40V | N-Channel | 8020pF @ 25V | 3.6m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 125nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| PMV56XN,215 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.92W Tc | TO-236AB | 2.5A | 0.085Ohm | N-Channel | 230pF @ 10V | 85m Ω @ 3.6A, 4.5V | 650mV @ 1mA | 3.76A Tc | 5.4nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| BUK7506-55B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk750655b127-datasheets-6152.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 254W Tc | TO-220AB | 75A | 582A | 0.006Ohm | 680 mJ | N-Channel | 5100pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| PH6530AL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | SC-100, SOT-669 | 30V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK654R8-40C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk654r840c127-datasheets-6174.pdf | TO-220-3 | 3 | 2013-06-14 00:00:00 | 40V | 158W Tc | N-Channel | 5200pF @ 25V | 4.8m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 88nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9505-30A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 230W Tc | TO-220AB | 75A | 400A | 0.0054Ohm | 500 mJ | N-Channel | 8600pF @ 25V | 4.6m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||
| PMN27UN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn27un135-datasheets-6049.pdf | SC-74, SOT-457 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.75W Tc | 5.7A | 0.04Ohm | N-Channel | 740pF @ 10V | 34m Ω @ 2A, 4.5V | 700mV @ 1mA | 5.7A Tc | 10.6nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| BUK9523-75A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk952375a127-datasheets-6086.pdf | TO-220-3 | 3 | EAR99 | unknown | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 138W Tc | TO-220AB | 53A | 213A | 0.026Ohm | 120 mJ | N-Channel | 3120pF @ 25V | 22m Ω @ 25A, 10V | 2V @ 1mA | 53A Tc | 4.5V 10V | ±10V | |||||||||||||||||||||||||||||||||
| BUK714R1-40BT,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchPLUS | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/nexperiausainc-buk714r140bt118-datasheets-6031.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | 5 | EAR99 | Tin | No | e3 | YES | GULL WING | 5 | Single | 272W | 1 | FET General Purpose Power | R-PSSO-G4 | 38 ns | 82ns | 90 ns | 141 ns | 187A | 20V | 40V | SILICON | DRAIN | SWITCHING | 272W Tc | 748A | 40V | N-Channel | 6808pF @ 25V | 4.1m Ω @ 50A, 10V | 4V @ 1mA | 75A Tc | 83nC @ 10V | Temperature Sensing Diode | 10V | ±20V |
