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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Factory Lead Time | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTB13N10G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd110n02r-datasheets-2526.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | unknown | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 3 | 30 | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 64.7W Ta | 13A | 39A | 0.165Ohm | 85 mJ | N-Channel | 550pF @ 25V | 165m Ω @ 6.5A, 10V | 4V @ 250μA | 13A Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| PSMN012-25YLC,115 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-psmn01225ylc115-datasheets-4654.pdf | SC-100, SOT-669 | LFPAK56, Power-SO8 | 25V | 26W Tc | N-Channel | 528pF @ 12V | 12.6mOhm @ 10A, 10V | 1.95V @ 1mA | 33A Tc | 8.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| HTNFET-DC | Honeywell Aerospace |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HTMOS™ | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/honeywellaerospace-htnfetd-datasheets-4602.pdf | 8-CDIP Exposed Pad | 8 Weeks | 55V | 50W Tj | N-Channel | 290pF @ 28V | 400m Ω @ 100mA, 5V | 2.4V @ 100μA | 4.3nC @ 5V | 5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| HTNFET-TC | Honeywell Aerospace |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HTMOS™ | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/honeywellaerospace-htnfetd-datasheets-4602.pdf | 8 Weeks | 4 | 55V | 50W Tj | N-Channel | 290pF @ 28V | 400m Ω @ 100mA, 5V | 2.4V @ 100μA | 4.3nC @ 5V | 5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMG45UN,115 | Rochester Electronics, LLC | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmg45un115-datasheets-4623.pdf | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP | 20V | 375mW Ta 4.35W Tc | N-Channel | 184pF @ 10V | 55mOhm @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 3.3nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD40N03RT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd4854nt4g-datasheets-4844.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | e3 | MATTE TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 1.5W Ta 50W Tc | 32A | 100A | 0.023Ohm | N-Channel | 584pF @ 20V | 16.5m Ω @ 10A, 10V | 2V @ 250μA | 7.8A Ta 32A Tc | 5.78nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| PMV170UN,215 | Rochester Electronics, LLC | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmv170un215-datasheets-4625.pdf | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 20V | 325mW Ta 1.14W Tc | N-Channel | 83pF @ 10V | 165mOhm @ 1A, 4.5V | 1V @ 250μA | 1A Ta | 1.65nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTP2955 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntp2955-datasheets-4659.pdf | TO-220-3 | 3 | no | unknown | e0 | TIN LEAD | NO | SINGLE | 240 | 3 | 30 | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.4W Ta 62.5W Tc | TO-220AB | 2.4A | 42A | 0.196Ohm | 216 mJ | P-Channel | 700pF @ 25V | 196m Ω @ 12A, 10V | 4V @ 250μA | 2.4A Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| PMN49EN,135 | Rochester Electronics, LLC | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmn49en135-datasheets-4627.pdf | SC-74, SOT-457 | 6-TSOP | 30V | 1.75W Tc | N-Channel | 350pF @ 30V | 47mOhm @ 2A, 10V | 2V @ 1mA | 4.6A Tc | 8.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMF87EN,115 | Rochester Electronics, LLC | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pn2222arlrpg-datasheets-7458.pdf | SC-70, SOT-323 | SOT-323-3 | 30V | 275mW Ta | N-Channel | 135pF @ 15V | 80mOhm @ 1.7A, 10V | 2.5V @ 250μA | 1.7A Ta | 4.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMN38EN,135 | Rochester Electronics, LLC | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmn38en135-datasheets-4631.pdf | SC-74, SOT-457 | 6-TSOP | 30V | 1.75W Tc | N-Channel | 495pF @ 25V | 38mOhm @ 3A, 10V | 2V @ 1mA | 5.4A Tc | 6.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMPB16XN,115 | Rochester Electronics, LLC | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pn3644-datasheets-7343.pdf | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 30V | 1.7W Ta 12.5W Tc | N-Channel | 775pF @ 15V | 21mOhm @ 7.2A, 4.5V | 1.5V @ 250μA | 7.2A Ta | 10.8nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMV185XN,215 | Rochester Electronics, LLC | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmv185xn215-datasheets-4638.pdf | TO-236-3, SC-59, SOT-23-3 | TO-236AB (SOT23) | 30V | 325mW Ta 1.275W Tc | N-Channel | 76pF @ 15V | 250mOhm @ 1.1A, 4.5V | 1.5V @ 250μA | 1.1A Ta | 1.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120UM70DAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/microsemicorporation-aptm120um70dag-datasheets-4640.pdf | SP6 | 2 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | 5kW | 1 | R-PUFM-X2 | 20 ns | 17ns | 62 ns | 245 ns | 171A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 5000W Tc | 0.08Ohm | 3200 mJ | N-Channel | 43500pF @ 25V | 80m Ω @ 85.5A, 10V | 5V @ 30mA | 171A Tc | 1650nC @ 10V | 10V | ±30V | ||||||||||||||||||||
| PMT760EN,115 | Rochester Electronics, LLC | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pn4250-datasheets-6828.pdf | TO-261-4, TO-261AA | SOT-223 | 100V | 800mW Ta 6.2W Tc | N-Channel | 160pF @ 80V | 950mOhm @ 800mA, 10V | 2.5V @ 250μA | 900mA Ta | 3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSS119L6433HTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss119l6433htma1-datasheets-4620.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 3 | LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | 1 | 170mA | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 360mW Ta | 0.17A | 6Ohm | 4.1 pF | N-Channel | 78pF @ 25V | 6 Ω @ 170mA, 10V | 2.3V @ 50μA | 170mA Ta | 2.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| PMPB20UN,115 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pn3645-datasheets-7048.pdf | 6-UDFN Exposed Pad | 6-DFN2020MD (2x2) | 20V | 1.7W Ta 12.5W Tc | N-Channel | 460pF @ 10V | 25mOhm @ 6.6A, 4.5V | 1V @ 250μA | 6.6A Ta | 7.1nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5867NL-1G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd5867nl1g-datasheets-4649.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 36W Tc | 20A | 76A | 0.05Ohm | 18 mJ | N-Channel | 675pF @ 25V | 39m Ω @ 10A, 10V | 2.5V @ 250μA | 20A Tc | 15nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| 2N7002E,215 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2n7002e215-datasheets-4615.pdf | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 60V | 830mW Ta | N-Channel | 50pF @ 10V | 3Ohm @ 500mA, 10V | 2.5V @ 250μA | 385mA Ta | 0.69nC @ 10V | 4.5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100DAM90G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100dam90g-datasheets-4588.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1 | R-XUFM-X5 | 18 ns | 12ns | 40 ns | 155 ns | 78A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1250W Tc | 3000 mJ | N-Channel | 20700pF @ 25V | 105m Ω @ 39A, 10V | 5V @ 10mA | 78A Tc | 744nC @ 10V | 10V | ±30V | |||||||||||||||||||||
| PMZB300XN,315 | Rochester Electronics, LLC | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pn5138-datasheets-7289.pdf | 3-XFDFN | DFN1006B-3 | 20V | 360mW Ta 2.7W Tc | N-Channel | 51pF @ 20V | 380mOhm @ 200mA, 4.5V | 1.5V @ 250μA | 1A Ta | 0.94nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120U10SAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120u10sag-datasheets-4590.pdf | SP6 | 4 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 4 | 1 | R-XUFM-X4 | 20 ns | 17ns | 62 ns | 245 ns | 116A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ISOLATED | SWITCHING | 1200V | 3290W Tc | 3200 mJ | N-Channel | 28900pF @ 25V | 120m Ω @ 58A, 10V | 5V @ 20mA | 116A Tc | 1100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| GA50JT06-258 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga50jt06258-datasheets-4618.pdf | TO-258-3, TO-258AA | 18 Weeks | 3 | 100A | 600V | 769W Tc | 25m Ω @ 50A | 100A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX6N200P3HV | IXYS | $60.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixtx6n200p3hv-datasheets-4592.pdf | TO-247-3 Variant | 24 Weeks | 6A | 2000V | 960W Tc | N-Channel | 3700pF @ 25V | 4 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 143nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| APTM20DAM04G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20dam04g-datasheets-4594.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1 | R-XUFM-X5 | 32 ns | 64ns | 116 ns | 88 ns | 372A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 1250W Tc | 0.005Ohm | 3000 mJ | N-Channel | 28900pF @ 25V | 5m Ω @ 186A, 10V | 5V @ 10mA | 372A Tc | 560nC @ 10V | 10V | ±30V | |||||||||||||||||||
| APTM120UM70FAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120um70fag-datasheets-4596.pdf | SP6 | 36 Weeks | 6 | No | 5kW | 1 | SP6 | 43.5nF | 20 ns | 17ns | 62 ns | 245 ns | 171A | 30V | 1200V | 5000W Tc | N-Channel | 43500pF @ 25V | 80mOhm @ 85.5A, 10V | 5V @ 30mA | 171A Tc | 1650nC @ 10V | 80 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APTM50UM13SAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50um13sag-datasheets-4598.pdf | SP6 | 2 | 36 Weeks | 6 | yes | EAR99 | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | 1 | R-PUFM-X2 | 21 ns | 42ns | 100 ns | 96 ns | 335A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 500V | 500V | 3290W Tc | 3000 mJ | N-Channel | 42200pF @ 25V | 15m Ω @ 167.5A, 10V | 5V @ 20mA | 335A Tc | 800nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| PMZB790SN,315 | Rochester Electronics, LLC | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmzb790sn315-datasheets-4600.pdf | 3-XFDFN | DFN1006B-3 | 60V | 360mW Ta 2.7W Tc | N-Channel | 35pF @ 30V | 940mOhm @ 300mA, 10V | 3V @ 250μA | 650mA Ta | 1.37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| HTNFET-D | Honeywell Aerospace |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HTMOS™ | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/honeywellaerospace-htnfetd-datasheets-4602.pdf | 8-CDIP Exposed Pad | 8 Weeks | 8-CDIP-EP | 290pF | 55V | 50W Tj | N-Channel | 290pF @ 28V | 400mOhm @ 100mA, 5V | 2.4V @ 100μA | 4.3nC @ 5V | 400 mΩ | 5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||
| APTM100UM65SCAVG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100um65scavg-datasheets-4603.pdf | Module | 5 | 5 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 5 | 1 | 18 ns | 14ns | 55 ns | 140 ns | 145A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 3250W Tc | 0.078Ohm | 3200 mJ | N-Channel | 28500pF @ 25V | 78m Ω @ 72.5A, 10V | 5V @ 20mA | 145A Tc | 1068nC @ 10V | 10V | ±30V |
