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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFX90N60X | IXYS | $105.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx90n60x-datasheets-4513.pdf | TO-247-3 | 19 Weeks | 90A | 600V | 1100W Tc | N-Channel | 8500pF @ 25V | 38m Ω @ 45A, 10V | 4.5V @ 8mA | 90A Tc | 210nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT28N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft28n50q-datasheets-4514.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 375W | 1 | Not Qualified | R-PDSO-G2 | 20ns | 12 ns | 51 ns | 28A | 30V | SILICON | DRAIN | SWITCHING | 375W Tc | 112A | 0.2Ohm | 1500 mJ | 500V | N-Channel | 3000pF @ 25V | 200m Ω @ 14A, 10V | 4.5V @ 4mA | 28A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| VMO60-05F | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-vmo6005f-datasheets-4493.pdf | TO-240AA | Lead Free | 4 | 24 Weeks | 65MOhm | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | 4 | NOT SPECIFIED | 590W | 1 | FET General Purpose Power | Not Qualified | 45ns | 30 ns | 250 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 590W Tc | 500V | N-Channel | 12600pF @ 25V | 75m Ω @ 500mA, 10V | 4V @ 24mA | 60A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT75M50B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt75m50l-datasheets-3241.pdf | 500V | 75A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | 45 ns | 55ns | 39 ns | 120 ns | 75A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1040W Tc | 0.075Ohm | N-Channel | 11600pF @ 25V | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 75A Tc | 290nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT10M07JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m07jvfr-datasheets-4496.pdf | 100V | 225A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 700W | 700W | 1 | ISOTOP® | 21.6nF | 25 ns | 60ns | 20 ns | 80 ns | 225A | 30V | 100V | N-Channel | 21600pF @ 25V | 7mOhm @ 500mA, 10V | 4V @ 5mA | 225A | 1050nC @ 10V | 7 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M11JVR | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt20m11jvr-datasheets-4497.pdf | 200V | 175A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 19 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | HIGH VOLTAGE | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 700W | 1 | 20 ns | 40ns | 10 ns | 75 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 700W Tc | 700A | 3600 mJ | 200V | N-Channel | 21600pF @ 25V | 11m Ω @ 500mA, 10V | 4V @ 5mA | 175A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| APT10025JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10025jvfr-datasheets-4499.pdf | 1kV | 34A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 700W | 700W | 1 | ISOTOP® | 18nF | 22 ns | 20ns | 16 ns | 97 ns | 34A | 30V | 1000V | N-Channel | 18000pF @ 25V | 250mOhm @ 500mA, 10V | 4V @ 5mA | 34A | 990nC @ 10V | 250 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| APTM20SKM08TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20skm08tg-datasheets-4500.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | UPPER | UNSPECIFIED | 260 | 12 | 40 | 781W | 1 | FET General Purpose Power | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | 781W Tc | 832A | 3000 mJ | N-Channel | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 208A Tc | 280nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT10M11JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m11jvfr-datasheets-4483.pdf | 100V | 144A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 450W | 450W | 1 | ISOTOP® | 10.38nF | 16 ns | 48ns | 9 ns | 51 ns | 144A | 30V | 100V | N-Channel | 10380pF @ 25V | 11mOhm @ 500mA, 10V | 4V @ 2.5mA | 144A | 450nC @ 10V | 11 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK80N15Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixfk80n15q-datasheets-4484.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 55ns | 20 ns | 68 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 0.0225Ohm | 1500 mJ | 150V | N-Channel | 4500pF @ 25V | 22.5m Ω @ 40A, 10V | 4V @ 4mA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| APT43M60B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt43m60b2-datasheets-4485.pdf | 600V | 43A | TO-247-3 Variant | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 19 Weeks | 38.000013g | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 780W | 1 | R-PSIP-T3 | 48 ns | 55ns | 44 ns | 145 ns | 45A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 780W Tc | 600V | N-Channel | 8590pF @ 25V | 150m Ω @ 21A, 10V | 5V @ 2.5mA | 45A Tc | 215nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTN5N250 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtn5n250-datasheets-4487.pdf | SOT-227-4, miniBLOC | 4 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | Single | 700W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 20ns | 44 ns | 90 ns | 5A | 30V | SILICON | ISOLATED | SWITCHING | 2500V | 700W Tc | 5A | 20A | 2500 mJ | 2.5kV | N-Channel | 8560pF @ 25V | 8.8 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXUV170N075 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3, Short Tab | 220 | 300W | Single | 300W | 175A | 5mOhm | 75V | N-Channel | 175A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M11JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m11jll-datasheets-4488.pdf | 200V | 176A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 694W | 694W | 1 | ISOTOP® | 10.32nF | 24 ns | 65ns | 9 ns | 55 ns | 176A | 30V | 200V | N-Channel | 10320pF @ 25V | 11mOhm @ 88A, 10V | 5V @ 5mA | 176A | 180nC @ 10V | 11 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH13N90 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh13n90-datasheets-4489.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 12ns | 18 ns | 51 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 52A | 0.8Ohm | 900V | N-Channel | 4200pF @ 25V | 800m Ω @ 500mA, 10V | 4.5V @ 4mA | 13A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| APT60M75JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt60m75jll-datasheets-4490.pdf | 600V | 58A | SOT-227-4, miniBLOC | Lead Free | 4 | 31 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | 23 ns | 15ns | 10 ns | 55 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 595W Tc | 232A | 0.075Ohm | 3200 mJ | N-Channel | 8930pF @ 25V | 75m Ω @ 29A, 10V | 5V @ 5mA | 58A Tc | 195nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT8015JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8015jvr-datasheets-4491.pdf | 800V | 44A | SOT-227-4, miniBLOC | Lead Free | 4 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 700W | 700W | 1 | ISOTOP® | 17.65nF | 22 ns | 20ns | 15 ns | 97 ns | 44A | 30V | 800V | N-Channel | 17650pF @ 25V | 150mOhm @ 500mA, 10V | 4V @ 5mA | 44A | 285nC @ 10V | 150 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| APTC60SKM24CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60skm24ct1g-datasheets-4492.pdf | SP1 | 10 | 36 Weeks | 1 | IN PRODUCTION (Last Updated: 2 weeks ago) | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | UPPER | UNSPECIFIED | 12 | 1 | FET General Purpose Power | Not Qualified | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 600V | 600V | 462W Tc | 260A | 0.024Ohm | N-Channel | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 95A Tc | 300nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFT16N120P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 26 Weeks | 1200V | 660W Tc | N-Channel | 6900pF @ 25V | 950m Ω @ 8A, 10V | 6.5V @ 1mA | 16A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH21N50F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfh21n50f-datasheets-4478.pdf | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 12ns | 7.7 ns | 36 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 84A | 0.25Ohm | 1500 mJ | 500V | N-Channel | 2600pF @ 25V | 250m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| APT5017BVFRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5017bvfrg-datasheets-4480.pdf | 500V | 30A | TO-247-3 | Lead Free | 24 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | No | 370W | 1 | TO-247 [B] | 5.28nF | 12 ns | 14ns | 11 ns | 55 ns | 30A | 30V | 500V | N-Channel | 5280pF @ 25V | 170mOhm @ 500mA, 10V | 4V @ 1mA | 30A Tc | 300nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTR68P20T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | ISOPLUS247™ | 3 | 1 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | compliant | NO | SINGLE | 3 | 1 | Other Transistors | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 270W Tc | 44A | 200A | 0.064Ohm | 2500 mJ | P-Channel | 33400pF @ 25V | 64m Ω @ 34A, 10V | 4V @ 250μA | 44A Tc | 380nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH88N20Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk88n20q-datasheets-4443.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 15 ns | 61 ns | 88A | 30V | SILICON | DRAIN | 500W Tc | TO-247AD | 2500 mJ | 200V | N-Channel | 4150pF @ 25V | 30m Ω @ 44A, 10V | 4V @ 4mA | 88A Tc | 146nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| APT80F60J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt80f60j-datasheets-4482.pdf | SOT-227-4, miniBLOC | 4 | 14 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | 134 ns | 156ns | 123 ns | 408 ns | 84A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 961W Tc | 0.055Ohm | 3352 mJ | N-Channel | 23994pF @ 25V | 55m Ω @ 60A, 10V | 5V @ 2.5mA | 84A Tc | 598nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APT45M100J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt45m100j-datasheets-4463.pdf | 1kV | 45A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 960W | 1 | 85 ns | 75ns | 70 ns | 285 ns | 45A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 960W Tc | 260A | N-Channel | 18500pF @ 25V | 180m Ω @ 33A, 10V | 5V @ 2.5mA | 45A Tc | 570nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFN36N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn36n110p-datasheets-4465.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | 54ns | 45 ns | 94 ns | 36A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 1000W Tc | 110A | 2000 mJ | 1.1kV | N-Channel | 23000pF @ 25V | 240m Ω @ 500mA, 10V | 6.5V @ 1mA | 36A Tc | 350nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTT10N100D | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 85ns | 75 ns | 110 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 400W Tc | 20A | 1kV | N-Channel | 2500pF @ 25V | 1.4 Ω @ 10A, 10V | 3.5V @ 250μA | 10A Tc | 130nC @ 10V | Depletion Mode | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APTC60SKM24T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc60skm24t1g-datasheets-4467.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | Tin | No | e1 | UPPER | THROUGH-HOLE | 12 | 1 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | CHOPPER | 600V | 600V | 462W Tc | 260A | 0.024Ohm | N-Channel | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 95A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APT8065BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8065bvrg-datasheets-4469.pdf | 800V | 13A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 280W | 1 | TO-247 [B] | 3.7nF | 12 ns | 11ns | 12 ns | 60 ns | 13A | 30V | 800V | N-Channel | 3700pF @ 25V | 650mOhm @ 500mA, 10V | 4V @ 1mA | 13A Tc | 225nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N30Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n30q3-datasheets-1982.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 80MOhm | 3 | EAR99 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 250ns | 24 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 1500 mJ | 300V | N-Channel | 3165pF @ 25V | 80m Ω @ 25A, 10V | 6.5V @ 4mA | 50A Tc | 65nC @ 10V | 10V | ±20V |
