Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTM100UM65DAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100um65dag-datasheets-4557.pdf | SP6 | 2 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | 1 | R-PUFM-X2 | 18 ns | 14ns | 55 ns | 140 ns | 145A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 3250W Tc | 580A | 0.078Ohm | 3200 mJ | N-Channel | 28500pF @ 25V | 78m Ω @ 72.5A, 10V | 5V @ 20mA | 145A Tc | 1068nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTH14N80 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth14n80-datasheets-4559.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 32 ns | 63 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 56A | 0.7Ohm | 800V | N-Channel | 4500pF @ 25V | 150ns | 100ns | 700m Ω @ 500mA, 10V | 4.5V @ 250μA | 14A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| APT10026L2LLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10026l2llg-datasheets-4560.pdf | 1kV | 38A | TO-264-3, TO-264AA | Lead Free | 3 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 1 | 264 MAX™ [L2] | 7.11nF | 17 ns | 8ns | 9 ns | 39 ns | 38A | 30V | 1000V | N-Channel | 7114pF @ 25V | 260mOhm @ 19A, 10V | 5V @ 5mA | 38A Tc | 267nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN50N120SIC | IXYS | $651.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | Tube | SiCFET (Silicon Carbide) | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfn50n120sic-datasheets-4561.pdf | SOT-227-4, miniBLOC | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1200V | N-Channel | 1900pF @ 1000V | 50m Ω @ 40A, 20V | 2.2V @ 2mA | 47A Tc | 100nC @ 20V | 20V | +20V, -5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10025JVR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10025jvr-datasheets-4563.pdf | 1kV | 34A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 700W | 700W | 1 | ISOTOP® | 18nF | 22 ns | 20ns | 16 ns | 97 ns | 34A | 30V | 1000V | N-Channel | 18000pF @ 25V | 250mOhm @ 500mA, 10V | 4V @ 5mA | 34A | 990nC @ 10V | 250 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IXTT72N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth72n20-datasheets-4294.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 20 ns | 80 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 288A | 0.033Ohm | 1500 mJ | 200V | N-Channel | 4400pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 72A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTL2N470 | IXYS | $89.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtl2n470-datasheets-4540.pdf | ISOPLUSi5-Pak™ | 24 Weeks | compliant | 4700V | 220W Tc | N-Channel | 6860pF @ 25V | 20 Ω @ 1A, 10V | 6V @ 250μA | 2A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5017BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5017bvrg-datasheets-4519.pdf | 500V | 30A | TO-247-3 | Lead Free | 4 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 370W | 1 | TO-247 [B] | 5.28nF | 12 ns | 14ns | 11 ns | 55 ns | 30A | 30V | 500V | N-Channel | 5280pF @ 25V | 170mOhm @ 500mA, 10V | 4V @ 1mA | 30A Tc | 300nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT58N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n20-datasheets-1852.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 40MOhm | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 16 ns | 72 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 232A | 200V | N-Channel | 4400pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APTM50SKM19G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50skm19g-datasheets-4521.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1 | R-XUFM-X5 | 18 ns | 35ns | 77 ns | 87 ns | 163A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 1136W Tc | 0.0225Ohm | 2500 mJ | N-Channel | 22400pF @ 25V | 22.5m Ω @ 81.5A, 10V | 5V @ 10mA | 163A Tc | 492nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APTC60DAM18CTG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60dam18ctg-datasheets-4523.pdf | SP4 | 12 | 36 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 12 | 833W | 1 | FET General Purpose Power | 21 ns | 30ns | 84 ns | 283 ns | 143A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 600V | 600V | 833W Tc | 572A | N-Channel | 28000pF @ 25V | 18m Ω @ 71.5A, 10V | 3.9V @ 4mA | 143A Tc | 1036nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APT12031JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt12031jfll-datasheets-4525.pdf | 1.2kV | 30A | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | yes | No | UPPER | UNSPECIFIED | 4 | 690W | 1 | 23 ns | 16ns | 30 ns | 79 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 690AW Tc | 3600 mJ | N-Channel | 9480pF @ 25V | 330m Ω @ 15A, 10V | 5V @ 5mA | 30A Tc | 365nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| MCB60I1200TZ-TUB | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~175°C TJ | SiCFET (Silicon Carbide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 20 Weeks | 1.2kV | N-Channel | 2790pF @ 1000V | 34m Ω @ 50A, 20V | 4V @ 15mA | 90A Tc | 160nC @ 20V | 20V | +20V, -5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT8015JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8015jvfr-datasheets-4527.pdf | 800V | 44A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 700W | 700W | 1 | ISOTOP® | 17.65nF | 22 ns | 20ns | 15 ns | 97 ns | 44A | 30V | 800V | N-Channel | 17650pF @ 25V | 150mOhm @ 500mA, 10V | 4V @ 5mA | 44A | 285nC @ 10V | 150 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| APTM10DAM05TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm10dam05tg-datasheets-4528.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | 780W | 1 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 100V | 780W Tc | 0.005Ohm | 3000 mJ | N-Channel | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 278A Tc | 700nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| APT10026JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10026jll-datasheets-4530.pdf | 1kV | 30A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 1 | ISOTOP® | 7.11nF | 17 ns | 8ns | 9 ns | 39 ns | 30A | 30V | 1000V | N-Channel | 7114pF @ 25V | 260mOhm @ 15A, 10V | 5V @ 5mA | 30A | 267nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT8011JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8011jll-datasheets-4532.pdf | 800V | 51A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 694W | 694W | 1 | ISOTOP® | 9.48nF | 23 ns | 23ns | 19 ns | 83 ns | 51A | 30V | 800V | N-Channel | 9480pF @ 25V | 110mOhm @ 25.5A, 10V | 5V @ 5mA | 51A | 650nC @ 10V | 110 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFR180N15P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr180n15p-datasheets-4534.pdf | ISOPLUS247™ | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 2.5kV | 32ns | 36 ns | 150 ns | 100A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 4000 mJ | 150V | N-Channel | 7000pF @ 25V | 13m Ω @ 90A, 10V | 5V @ 4mA | 100A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APTM100DA18TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100da18tg-datasheets-4535.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | 780W | 1 | 18 ns | 12ns | 40 ns | 155 ns | 43A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1000V | 780W Tc | 3000 mJ | N-Channel | 10400pF @ 25V | 210m Ω @ 21.5A, 10V | 5V @ 5mA | 43A Tc | 372nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IPC65R041CFDX1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120DA30CT1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw, Through Hole | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120da30ct1g-datasheets-4515.pdf | SP1 | 10 | 22 Weeks | 1 | IN PRODUCTION (Last Updated: 3 weeks ago) | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 12 | 657W | 1 | FET General Purpose Power | 100 ns | 60ns | 90 ns | 315 ns | 31A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 657W Tc | 0.36Ohm | N-Channel | 14560pF @ 25V | 360m Ω @ 25A, 10V | 5V @ 2.5mA | 31A Tc | 560nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT10026JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | /files/microsemicorporation-apt10026jfll-datasheets-4537.pdf | 1kV | 30A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 1 | ISOTOP® | 7.11nF | 17 ns | 8ns | 9 ns | 39 ns | 30A | 30V | 1000V | N-Channel | 7114pF @ 25V | 260mOhm @ 15A, 10V | 5V @ 5mA | 30A | 267nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M11JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt20m11jfll-datasheets-4516.pdf | 200V | 176A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 694W | 694W | 1 | ISOTOP® | 10.32nF | 24 ns | 65ns | 9 ns | 55 ns | 176A | 30V | 200V | N-Channel | 10320pF @ 25V | 11mOhm @ 88A, 10V | 5V @ 5mA | 176A | 180nC @ 10V | 11 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| APT8011JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8011jfll-datasheets-4517.pdf | 800V | 51A | SOT-227-4, miniBLOC | Lead Free | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | 694W | 694W | 1 | ISOTOP® | 9.48nF | 23 ns | 19 ns | 83 ns | 51A | 30V | 800V | N-Channel | 9480pF @ 25V | 125mOhm @ 25.5A, 10V | 5V @ 5mA | 51A | 650nC @ 10V | 125 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| APT75M50B2 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt75m50l-datasheets-3241.pdf | 500V | 75A | TO-247-3 Variant | Lead Free | 3 | 22 Weeks | 3 | IN PRODUCTION (Last Updated: 1 month ago) | yes | HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1.04kW | 1 | 45 ns | 55ns | 39 ns | 120 ns | 75A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1040W Tc | 0.075Ohm | N-Channel | 11600pF @ 25V | 75m Ω @ 37A, 10V | 5V @ 2.5mA | 75A Tc | 290nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APT10M07JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m07jvfr-datasheets-4496.pdf | 100V | 225A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 700W | 700W | 1 | ISOTOP® | 21.6nF | 25 ns | 60ns | 20 ns | 80 ns | 225A | 30V | 100V | N-Channel | 21600pF @ 25V | 7mOhm @ 500mA, 10V | 4V @ 5mA | 225A | 1050nC @ 10V | 7 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| APT20M11JVR | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt20m11jvr-datasheets-4497.pdf | 200V | 175A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 19 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | HIGH VOLTAGE | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 700W | 1 | 20 ns | 40ns | 10 ns | 75 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 700W Tc | 700A | 3600 mJ | 200V | N-Channel | 21600pF @ 25V | 11m Ω @ 500mA, 10V | 4V @ 5mA | 175A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| APT10025JVFR | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10025jvfr-datasheets-4499.pdf | 1kV | 34A | SOT-227-4, miniBLOC | Lead Free | 4 | No | 700W | 700W | 1 | ISOTOP® | 18nF | 22 ns | 20ns | 16 ns | 97 ns | 34A | 30V | 1000V | N-Channel | 18000pF @ 25V | 250mOhm @ 500mA, 10V | 4V @ 5mA | 34A | 990nC @ 10V | 250 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| APTM20SKM08TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20skm08tg-datasheets-4500.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | UPPER | UNSPECIFIED | 260 | 12 | 40 | 781W | 1 | FET General Purpose Power | 32 ns | 64ns | 116 ns | 88 ns | 208A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | 781W Tc | 832A | 3000 mJ | N-Channel | 14400pF @ 25V | 10m Ω @ 104A, 10V | 5V @ 5mA | 208A Tc | 280nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFN32N120P | IXYS | $42.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfn32n120p-datasheets-4502.pdf | SOT-227-4, miniBLOC | 4 | 20 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 830W | 1 | FET General Purpose Power | 62ns | 48 ns | 88 ns | 32A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 1000W Tc | 2000 mJ | 1.2kV | N-Channel | 21000pF @ 25V | 310m Ω @ 500mA, 10V | 6.5V @ 1mA | 32A Tc | 360nC @ 10V | 10V | ±30V |
