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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Interface | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Output Configuration | Fault Protection | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFN36N110P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn36n110p-datasheets-4465.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1kW | 1 | FET General Purpose Power | Not Qualified | 54ns | 45 ns | 94 ns | 36A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 1000W Tc | 110A | 2000 mJ | 1.1kV | N-Channel | 23000pF @ 25V | 240m Ω @ 500mA, 10V | 6.5V @ 1mA | 36A Tc | 350nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IXTT10N100D | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixth10n100d-datasheets-4365.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 85ns | 75 ns | 110 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 400W Tc | 20A | 1kV | N-Channel | 2500pF @ 25V | 1.4 Ω @ 10A, 10V | 3.5V @ 250μA | 10A Tc | 130nC @ 10V | Depletion Mode | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| APTC60SKM24T1G | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/microsemicorporation-aptc60skm24t1g-datasheets-4467.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | Tin | No | e1 | UPPER | THROUGH-HOLE | 12 | 1 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | CHOPPER | 600V | 600V | 462W Tc | 260A | 0.024Ohm | N-Channel | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 95A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| APT8065BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt8065bvrg-datasheets-4469.pdf | 800V | 13A | TO-247-3 | Lead Free | IN PRODUCTION (Last Updated: 1 month ago) | No | 280W | 1 | TO-247 [B] | 3.7nF | 12 ns | 11ns | 12 ns | 60 ns | 13A | 30V | 800V | N-Channel | 3700pF @ 25V | 650mOhm @ 500mA, 10V | 4V @ 1mA | 13A Tc | 225nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N30Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh50n30q3-datasheets-1982.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | Lead Free | 2 | 26 Weeks | 80MOhm | 3 | EAR99 | AVALANCHE RATED | unknown | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14 ns | 250ns | 24 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 1500 mJ | 300V | N-Channel | 3165pF @ 25V | 80m Ω @ 25A, 10V | 6.5V @ 4mA | 50A Tc | 65nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| APT5015BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5015bvrg-datasheets-4473.pdf | 500V | 32A | TO-247-3 | Lead Free | 6 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | No | 370W | 370W | 1 | TO-247 [B] | 5.28nF | 12 ns | 14ns | 11 ns | 55 ns | 32A | 30V | 500V | N-Channel | 5280pF @ 25V | 150mOhm @ 500mA, 10V | 4V @ 1mA | 32A Tc | 300nC @ 10V | 170 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX120N30P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk120n30p3-datasheets-1840.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 30 Weeks | 247 | Single | 26 ns | 60 ns | 120A | 20V | 300V | 1130W Tc | N-Channel | 8630pF @ 25V | 27m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT10M19BVRG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10m19bvrg-datasheets-4476.pdf | 100V | 75A | TO-247-3 | Lead Free | 25 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | No | 370W | 370W | 1 | TO-247 [B] | 5.28nF | 16 ns | 40ns | 20 ns | 50 ns | 75A | 30V | 100V | N-Channel | 6120pF @ 25V | 19mOhm @ 500mA, 10V | 4V @ 1mA | 75A Tc | 300nC @ 10V | 170 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCTW40N120G2VAG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~200°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sctw40n120g2vag-datasheets-4477.pdf | TO-247-3 | compliant | 1200V | 290W Tc | N-Channel | 1230pF @ 800V | 105m Ω @ 20A, 18V | 5V @ 1mA | 33A Tc | 63nC @ 18V | 18V | +22V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH12N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-ixfh12n120p-datasheets-4453.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 1.35Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | 25ns | 34 ns | 62 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 6.5V | 543W Tc | TO-247AD | 500 mJ | 1.2kV | N-Channel | 5400pF @ 25V | 1.35 Ω @ 500mA, 10V | 6.5V @ 1mA | 12A Tc | 103nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SPW47N60CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spw47n60cfdfksa1-datasheets-4432.pdf | TO-247-3 | 3 | yes | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 417W Tc | TO-247AA | 46A | 115A | 0.083Ohm | 1800 mJ | N-Channel | 7700pF @ 25V | 83m Ω @ 29A, 10V | 5V @ 2.9mA | 46A Tc | 322nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT43F60L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt43f60l-datasheets-4436.pdf | TO-264-3, TO-264AA | 3 | 29 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 780W | 1 | R-PSFM-T3 | 48 ns | 55ns | 44 ns | 145 ns | 45A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 780W Tc | N-Channel | 8590pF @ 25V | 150m Ω @ 21A, 10V | 5V @ 2.5mA | 45A Tc | 215nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXUV170N075S | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | PLUS-220SMD | 220 | 300W | Single | 300W | 175A | 5.3mOhm | 75V | N-Channel | 175A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120DA30T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120da30t1g-datasheets-4438.pdf | SP1 | 12 | 36 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | 657W | 1 | FET General Purpose Power | 100 ns | 60ns | 90 ns | 315 ns | 31A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 657W Tc | 0.36Ohm | N-Channel | 14560pF @ 25V | 360m Ω @ 25A, 10V | 5V @ 2.5mA | 31A Tc | 560nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFT10N100 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixft10n100-datasheets-4440.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 32 ns | 62 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 300W Tc | 40A | 1kV | N-Channel | 4000pF @ 25V | 1.2 Ω @ 5A, 10V | 4.5V @ 4mA | 10A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFR64N50P | IXYS | $18.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n50p-datasheets-4441.pdf | 500V | 64A | ISOPLUS247™ | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 2.5kV | 25ns | 22 ns | 85 ns | 35A | 30V | SILICON | ISOLATED | SWITCHING | 5.5V | 300W Tc | TO-247AD | 150A | 0.095Ohm | 2500 mJ | 500V | N-Channel | 8700pF @ 25V | 95m Ω @ 32A, 10V | 5.5V @ 8mA | 35A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTK75N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixtk75n30-datasheets-4442.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 25ns | 20 ns | 88 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 540W Tc | 0.042Ohm | 2500 mJ | 300V | N-Channel | 6000pF @ 25V | 42m Ω @ 500mA, 10V | 4V @ 250μA | 75A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFK88N20Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk88n20q-datasheets-4443.pdf | TO-264-3, TO-264AA | 3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 15 ns | 61 ns | 88A | 30V | SILICON | DRAIN | 500W Tc | 2500 mJ | 200V | N-Channel | 4150pF @ 25V | 30m Ω @ 44A, 10V | 4V @ 4mA | 88A Tc | 146nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| R6046ANZC8 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-3P-3 Full Pack | Lead Free | 3 | 10 Weeks | 3 | On/Off | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 500mA | 60 ns | 130ns | 100 ns | 230 ns | 46A | 30V | SILICON | ISOLATED | SWITCHING | 600V | 600V | High Side | Over Temperature, Reverse Current | 120W Tc | N-Channel | 6000pF @ 25V | 81m Ω @ 23A, 10V | 4.5V @ 1mA | 46A Ta | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFR58N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfr58n20-datasheets-4446.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 300W Tc | 232A | 0.04Ohm | 1000 mJ | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 50A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTQ40N50Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtq40n50q-datasheets-4447.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 14 ns | 56 ns | 40A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 160A | 0.16Ohm | 2 mJ | 500V | N-Channel | 4500pF @ 25V | 160m Ω @ 500mA, 10V | 4.5V @ 4mA | 40A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IXFT70N20Q3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixft70n20q3-datasheets-4448.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 16.05mm | 5.1mm | 14mm | 2 | 26 Weeks | 3 | EAR99 | AVALANCHE RATED | not_compliant | GULL WING | 4 | Single | 690W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 17 ns | 10ns | 9 ns | 24 ns | 70A | 30V | SILICON | DRAIN | SWITCHING | 690W Tc | 210A | 0.04Ohm | 1500 mJ | 200V | N-Channel | 3150pF @ 25V | 40m Ω @ 35A, 10V | 6.5V @ 4mA | 70A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| APT100F50J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt100f50j-datasheets-4451.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 22 Weeks | 4 | yes | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 960W | 1 | 105 ns | 125ns | 90 ns | 280 ns | 103A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 960W Tc | 0.038Ohm | 3350 mJ | N-Channel | 24600pF @ 25V | 36m Ω @ 75A, 10V | 5V @ 5mA | 103A Tc | 620nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFR200N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr200n10p-datasheets-4452.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | No SVHC | 247 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 35ns | 90 ns | 150 ns | 133A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 400A | 0.009Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 9m Ω @ 100A, 10V | 5V @ 8mA | 133A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTH75N10L2 | IXYS | $14.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt75n10l2-datasheets-3647.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 75A | 20V | SILICON | DRAIN | AMPLIFIER | 400W Tc | 225A | 0.021Ohm | 2500 mJ | 100V | N-Channel | 8100pF @ 25V | 21m Ω @ 500mA, 10V | 4.5V @ 250μA | 75A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXTH30N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n50-datasheets-4431.pdf | TO-247-3 | 3 | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 42ns | 26 ns | 110 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-247AD | 120A | 0.17Ohm | 500V | N-Channel | 5680pF @ 25V | 170m Ω @ 500mA, 10V | 4V @ 250μA | 30A Tc | 227nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT34M60B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt34m60b-datasheets-4412.pdf | 600V | 34A | TO-247-3 | Lead Free | 3 | 18 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | FAST SWITCHING, AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | 37 ns | 43ns | 34 ns | 115 ns | 36A | 30V | SILICON | Single | DRAIN | SWITCHING | 624W Tc | TO-247AB | 58A | 930 mJ | N-Channel | 6640pF @ 25V | 190m Ω @ 17A, 10V | 5V @ 1mA | 36A Tc | 165nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTP64N10L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 24 Weeks | compliant | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 32A, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW47N65C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-spw47n65c3fksa1-datasheets-4414.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 415W | 1 | Not Qualified | R-PSFM-T3 | 100 ns | 27ns | 14 ns | 210 ns | 47A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | 415W Tc | TO-247AD | 0.07Ohm | N-Channel | 7000pF @ 25V | 70m Ω @ 30A, 10V | 3.9V @ 2.7mA | 47A Tc | 255nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTT16N50D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth16n50d2-datasheets-4362.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 24 Weeks | Single | 695W | TO-268 | 5.25nF | 173ns | 220 ns | 203 ns | 16A | 20V | 500V | 695W Tc | 300mOhm | 500V | N-Channel | 5250pF @ 25V | 240mOhm @ 8A, 0V | 16A Tc | 199nC @ 5V | Depletion Mode | 240 mΩ | 0V | ±20V |
