Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APTM20DAM05G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20dam05g-datasheets-4610.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1 | R-XUFM-X5 | 28 ns | 56ns | 99 ns | 81 ns | 317A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 1136W Tc | 2500 mJ | N-Channel | 27400pF @ 25V | 6m Ω @ 158.5A, 10V | 5V @ 10mA | 317A Tc | 448nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| PMT200EN,135 | Rochester Electronics, LLC | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmt200en135-datasheets-4612.pdf | TO-261-4, TO-261AA | SOT-223 | 100V | 800mW Ta 8.3W Tc | N-Channel | 475pF @ 80V | 235mOhm @ 1.5A, 10V | 2.5V @ 250μA | 1.8A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB380XN,315 | Rochester Electronics, LLC | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pmzb380xn315-datasheets-4614.pdf | 3-XFDFN | DFN1006B-3 | 30V | 360mW Ta 2.7W Tc | N-Channel | 56pF @ 25V | 460mOhm @ 200mA, 4.5V | 1.5V @ 250μA | 930mA Ta | 0.87nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002E,215 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2n7002e215-datasheets-4615.pdf | TO-236-3, SC-59, SOT-23-3 | TO-236AB | 60V | 830mW Ta | N-Channel | 50pF @ 10V | 3Ohm @ 500mA, 10V | 2.5V @ 250μA | 385mA Ta | 0.69nC @ 10V | 4.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100DAM90G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100dam90g-datasheets-4588.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1 | R-XUFM-X5 | 18 ns | 12ns | 40 ns | 155 ns | 78A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 1250W Tc | 3000 mJ | N-Channel | 20700pF @ 25V | 105m Ω @ 39A, 10V | 5V @ 10mA | 78A Tc | 744nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| PMZB300XN,315 | Rochester Electronics, LLC | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-pn5138-datasheets-7289.pdf | 3-XFDFN | DFN1006B-3 | 20V | 360mW Ta 2.7W Tc | N-Channel | 51pF @ 20V | 380mOhm @ 200mA, 4.5V | 1.5V @ 250μA | 1A Ta | 0.94nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100UM45FAG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-aptm100um45fag-datasheets-4564.pdf | SP6 | 108mm | 15mm | 62mm | Lead Free | 2 | 36 Weeks | 52mOhm | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | 1 | Single | 5kW | 1 | R-PUFM-X2 | 18 ns | 14ns | 55 ns | 140 ns | 215A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 5000W Tc | 3200 mJ | N-Channel | 42700pF @ 25V | 52m Ω @ 107.5A, 10V | 5V @ 30mA | 215A Tc | 1602nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| APTM20UM04SAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20um04sag-datasheets-4566.pdf | SP6 | 2 | 36 Weeks | 6 | yes | EAR99 | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | 1.56kW | 1 | R-PUFM-X2 | 32 ns | 64ns | 116 ns | 88 ns | 417A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 1560W Tc | 0.005Ohm | 3000 mJ | N-Channel | 28800pF @ 25V | 5m Ω @ 208.5A, 10V | 5V @ 10mA | 417A Tc | 560nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APTM10UM01FAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm10um01fag-datasheets-4568.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 2.5kW | 1 | R-XUFM-X5 | 185 ns | 270ns | 175 ns | 600 ns | 860A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 2500W Tc | 2200A | 3000 mJ | N-Channel | 60000pF @ 25V | 1.6m Ω @ 275A, 10V | 4V @ 12mA | 860A Tc | 2100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| APTM20UM03FAG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/microsemicorporation-aptm20um03fag-datasheets-4571.pdf | SP6 | 2 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | 2.27kW | 1 | R-PUFM-X2 | 32 ns | 64ns | 116 ns | 88 ns | 580A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 2270W Tc | 2320A | 3000 mJ | N-Channel | 43300pF @ 25V | 3.6m Ω @ 290A, 10V | 5V @ 15mA | 580A Tc | 840nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| APTM100UM60FAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100um60fag-datasheets-4573.pdf | SP6 | 2 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 2 | 1 | R-PUFM-X2 | 18 ns | 12ns | 40 ns | 155 ns | 129A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | 1000V | 2272W Tc | 0.07Ohm | 3000 mJ | N-Channel | 31100pF @ 25V | 70m Ω @ 64.5A, 10V | 5V @ 15mA | 129A Tc | 1116nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| VMO550-01F | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-vmo55001f-datasheets-4575.pdf | Y3-DCB | 4 | 4 | yes | EAR99 | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | NOT SPECIFIED | 2.2kW | 1 | FET General Purpose Power | Not Qualified | 500ns | 200 ns | 800 ns | 590A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2200W Tc | 2360A | 0.0021Ohm | 100V | N-Channel | 50000pF @ 25V | 2.1m Ω @ 500mA, 10V | 6V @ 110mA | 590A Tc | 2000nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| APT20M11JVFR | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS V® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt20m11jvfr-datasheets-4576.pdf | 200V | 175A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 28 Weeks | 30.000004g | 4 | yes | EAR99 | FREDFET | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 700W | 1 | FET General Purpose Power | 20 ns | 40ns | 10 ns | 75 ns | 175A | 30V | SILICON | ISOLATED | SWITCHING | 700W Tc | 700A | 3600 mJ | N-Channel | 21600pF @ 25V | 11m Ω @ 500mA, 10V | 4V @ 5mA | 175A Tc | 180nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| APT60M60JLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt60m60jll-datasheets-4578.pdf | 600V | 70A | SOT-227-4, miniBLOC | Lead Free | 4 | 31 Weeks | 4 | yes | UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 694W | 1 | 21 ns | 16ns | 12 ns | 51 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 694W Tc | 280A | 0.06Ohm | 3600 mJ | N-Channel | 12630pF @ 25V | 60m Ω @ 35A, 10V | 5V @ 5mA | 70A Tc | 289nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APTM10SKM02G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm10skm02g-datasheets-4579.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1 | R-XUFM-X5 | 160 ns | 240ns | 160 ns | 500 ns | 495A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 1250W Tc | 0.0025Ohm | 3000 mJ | N-Channel | 40000pF @ 25V | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 495A Tc | 1360nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFN90N170SK | IXYS | $263.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~150°C TJ | SiCFET (Silicon Carbide) | SOT-227-4, miniBLOC | 28 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1700V | N-Channel | 7340pF @ 1000V | 35m Ω @ 100A, 20V | 4V @ 36mA | 90A Tc | 376nC @ 20V | 20V | +20V, -5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR9N80Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | ISOPLUS247™ | 800V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50M38JFLL | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50m38jfll-datasheets-4582.pdf | 500V | 88A | SOT-227-4, miniBLOC | Lead Free | 5 Weeks | 4 | IN PRODUCTION (Last Updated: 1 month ago) | No | 694W | 694W | 1 | ISOTOP® | 12nF | 17 ns | 22ns | 4 ns | 50 ns | 88A | 30V | 500V | N-Channel | 12000pF @ 25V | 38mOhm @ 44A, 10V | 5V @ 5mA | 88A | 270nC @ 10V | 38 mΩ | |||||||||||||||||||||||||||||||||||||||||
| C3M0032120K | Cree/Wolfspeed | $32.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | TO-247-4 | TO-247-4L | 1200V | 283W Tc | N-Channel | 3357pF @ 1000V | 43mOhm @ 40A, 15V | 3.6V @ 11.5mA | 63A Tc | 118nC @ 15V | 15V | +15V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10UM02FAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm10um02fag-datasheets-4586.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.66kW | 1 | R-XUFM-X5 | 160 ns | 240ns | 160 ns | 500 ns | 570A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 1660W Tc | 0.0025Ohm | 3000 mJ | N-Channel | 40000pF @ 25V | 2.5m Ω @ 200A, 10V | 4V @ 10mA | 570A Tc | 1360nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| APTM120U10SCAVG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120u10scavg-datasheets-4587.pdf | SP6 | 5 | 22 Weeks | 6 | IN PRODUCTION (Last Updated: 3 weeks ago) | AVALANCHE RATED | UPPER | UNSPECIFIED | 5 | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X5 | 20 ns | 17ns | 62 ns | 245 ns | 116A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 3290W Tc | 3200 mJ | N-Channel | 28900pF @ 25V | 120m Ω @ 58A, 10V | 5V @ 20mA | 116A Tc | 1100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTT72N20 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth72n20-datasheets-4294.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 20 ns | 80 ns | 72A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 288A | 0.033Ohm | 1500 mJ | 200V | N-Channel | 4400pF @ 25V | 33m Ω @ 500mA, 10V | 4V @ 250μA | 72A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTL2N470 | IXYS | $89.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixtl2n470-datasheets-4540.pdf | ISOPLUSi5-Pak™ | 24 Weeks | compliant | 4700V | 220W Tc | N-Channel | 6860pF @ 25V | 20 Ω @ 1A, 10V | 6V @ 250μA | 2A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX5N250 | IXYS | $121.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtx5n250-datasheets-4542.pdf | TO-247-3 | 3 | 28 Weeks | 3 | AVALANCHE RATED | 3 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 20ns | 44 ns | 90 ns | 5A | 5V | SILICON | DRAIN | SWITCHING | 2500V | 960W Tc | 5A | 20A | 2500 mJ | 2.5kV | N-Channel | 8560pF @ 25V | 8.8 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| APTM50DAM17G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50dam17g-datasheets-4543.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1 | R-XUFM-X5 | 21 ns | 38ns | 93 ns | 75 ns | 180A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 1250W Tc | 720A | 3000 mJ | N-Channel | 28000pF @ 25V | 20m Ω @ 90A, 10V | 5V @ 10mA | 180A Tc | 560nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| APTM50DAM19G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50dam19g-datasheets-4545.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | UPPER | UNSPECIFIED | 260 | 5 | 40 | 1 | FET General Purpose Power | R-XUFM-X5 | 18 ns | 35ns | 77 ns | 87 ns | 163A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 1136W Tc | 0.0225Ohm | 2500 mJ | N-Channel | 22400pF @ 25V | 22.5m Ω @ 81.5A, 10V | 5V @ 10mA | 163A Tc | 492nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFR80N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr80n60p3-datasheets-4547.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 30 Weeks | 247 | Single | FET General Purpose Power | 48 ns | 87 ns | 48A | 30V | 600V | 540W Tc | N-Channel | 13100pF @ 25V | 76m Ω @ 40A, 10V | 5V @ 8mA | 48A Tc | 190nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| APT10026L2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt10026l2fllg-datasheets-4548.pdf | 1kV | 38A | TO-264-3, TO-264AA | Lead Free | 2 Weeks | 3 | 1 | 17 ns | 8ns | 9 ns | 39 ns | 38A | 30V | 1000V | N-Channel | 7114pF @ 25V | 260m Ω @ 19A, 10V | 5V @ 5mA | 38A Tc | 267nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APTM10SKM05TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm10skm05tg-datasheets-4550.pdf | SP4 | 12 | 36 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | 780W | 1 | 80 ns | 165ns | 135 ns | 280 ns | 278A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 100V | 780W Tc | 0.005Ohm | 3000 mJ | N-Channel | 20000pF @ 25V | 5m Ω @ 125A, 10V | 4V @ 5mA | 278A Tc | 700nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APTM50SKM17G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50skm17g-datasheets-4552.pdf | SP6 | 5 | 36 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 1.25kW | 1 | R-XUFM-X5 | 21 ns | 38ns | 93 ns | 75 ns | 180A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 1250W Tc | 720A | 0.02Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 20m Ω @ 90A, 10V | 5V @ 10mA | 180A Tc | 560nC @ 10V | 10V | ±30V |
