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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AUIRL3705Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirl3705z-datasheets-8586.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | 3 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | Single | 130W | 1 | FET General Purpose Power | 17 ns | 240ns | 83 ns | 26 ns | 75A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 0.008Ohm | 55V | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPA65R380C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa65r380c6xksa1-datasheets-8595.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | 12 ns | 11 ns | 110 ns | 10.6A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 31W Tc | TO-220AB | 29A | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTA1N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 1000V | 50W Tc | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF22N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 50W | 1 | FET General Purpose Power | 22A | 30V | Single | 500V | 50W Tc | N-Channel | 3710pF @ 25V | 260m Ω @ 11A, 10V | 4.5V @ 250μA | 22A Tc | 83nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK2A65D(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 380pF | 15ns | 7 ns | 2A | 30V | 650V | 30W Tc | N-Channel | 380pF @ 25V | 3.26Ohm @ 1A, 10V | 4.4V @ 1mA | 2A Ta | 9nC @ 10V | 3.26 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF6215 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirf6215-datasheets-8611.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | No | Single | 110W | 1 | Other Transistors | 14 ns | 36ns | 37 ns | 53 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 150V | -2V | 110W Tc | TO-220AB | 44A | 0.29Ohm | -150V | P-Channel | 860pF @ 25V | 290m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AOTF20N40L | Alpha & Omega Semiconductor Inc. | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 20A | 400V | 40W Tc | N-Channel | 2290pF @ 25V | 250m Ω @ 10A, 10V | 4.3V @ 250μA | 20A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT2142L | Alpha & Omega Semiconductor Inc. | $0.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | TO-220-3 | 18 Weeks | 40V | 312W Tc | N-Channel | 8320pF @ 20V | 1.9m Ω @ 20A, 10V | 2.3V @ 250μA | 120A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S2L11AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipp80n06s2l11aksa2-datasheets-8624.pdf | TO-220-3 | Contains Lead | 3 | 14 Weeks | 3 | yes | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 1 | 11 ns | 32ns | 13 ns | 46 ns | 80A | 20V | 55V | SILICON | SINGLE WITH BUILT-IN DIODE | 158W Tc | TO-220AB | 0.0147Ohm | 280 mJ | N-Channel | 2075pF @ 25V | 10.7m Ω @ 40A, 10V | 2V @ 93μA | 80A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOT20N60L | Alpha & Omega Semiconductor Inc. | $1.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | No | 417W | 1 | 20A | 30V | 600V | 417W Tc | N-Channel | 3680pF @ 25V | 370m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF20N60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 20A | 600V | 50W Tc | N-Channel | 3680pF @ 25V | 370m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT262L | Alpha & Omega Semiconductor Inc. | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Power | 140A | Single | 60V | 2.1W Ta 333W Tc | N-Channel | 9800pF @ 30V | 3m Ω @ 20A, 10V | 3.2V @ 250μA | 20A Ta 140A Tc | 115nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB9509L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | yes | not_compliant | e3 | Tin (Sn) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z24STRRPBF | Vishay Siliconix | $0.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9z24spbf-datasheets-1340.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 12 Weeks | 1.437803g | 280mOhm | 3 | No | 1 | Single | D2PAK | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -11A | 20V | 60V | 3.7W Ta 60W Tc | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP062NE7N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipp062ne7n3gxksa1-datasheets-8506.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 136W | 1 | R-PSFM-T3 | 11 ns | 48ns | 10 ns | 24 ns | 80A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | 136W Tc | TO-220AB | 320A | 0.0062Ohm | N-Channel | 3840pF @ 37.5V | 6.2m Ω @ 73A, 10V | 3.8V @ 70μA | 80A Tc | 55nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AOV15S60 | Alpha & Omega Semiconductor Inc. | $0.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 4-PowerTSFN | FET General Purpose Power | 12A | Single | 600V | 8.3W Ta 208W Tc | N-Channel | 717pF @ 100V | 360m Ω @ 7.5A, 10V | 3.8V @ 250μA | 520mA Ta 12A Tc | 15.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL7736M2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirl7736m2tr-datasheets-8511.pdf | DirectFET™ Isometric M4 | 5 | 16 Weeks | No SVHC | 9 | HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | No | BOTTOM | 63W | 1 | FET General Purpose Power | R-XBCC-N5 | 48 ns | 210ns | 76 ns | 56 ns | 179A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.5W Ta 63W Tc | 22A | 450A | 0.003Ohm | 40V | N-Channel | 5055pF @ 25V | 3m Ω @ 67A, 10V | 2.5V @ 150μA | 179A Tc | 78nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| IRLR3410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlr3410trpbf-datasheets-2107.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, ULTRA LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-252AA | 17A | 60A | 0.125Ohm | 150 mJ | N-Channel | 800pF @ 25V | 105m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 34nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c410naft1g-datasheets-8527.pdf | 8-PowerTDFN, 5 Leads | 9 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 46A Ta 300A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG8N65SCT | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg8n65sct-datasheets-8529.pdf | TO-220-3 | 6 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 125W Tc | N-Channel | 1217pF @ 25V | 1.3 Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF1018E | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf1018e-datasheets-8531.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | 2 | 13 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 55 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 0.0084Ohm | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 79A Tc | 69nC @ 10V | |||||||||||||||||||||||||||||||||||||||
| IPI70N12S3L12AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipi70n12s3l12aksa1-datasheets-8536.pdf | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 70A | 280A | 0.0158Ohm | 410 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA100N04T2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 40V | 150W Tc | N-Channel | 2690pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 100A Tc | 25.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9520STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irf9520spbf-datasheets-1890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 390pF | 9.6 ns | 29ns | 25 ns | 21 ns | -6.8A | 20V | 100V | 3.7W Ta 60W Tc | 600mOhm | P-Channel | 390pF @ 25V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTU64N055T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-251-3 Short Leads, IPak, TO-251AA | 64A | 55V | N-Channel | 4V @ 25μA | 64A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7736M2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf7736m2tr-datasheets-8545.pdf | DirectFET™ Isometric M4 | Lead Free | 5 | 16 Weeks | No SVHC | 9 | HIGH RELIABILITY | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 63W | 1 | FET General Purpose Power | R-XBCC-N5 | 21 ns | 43ns | 27 ns | 39 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 2.5W Ta 63W Tc | 432A | 0.003Ohm | 286 mJ | 40V | N-Channel | 4267pF @ 25V | 3m Ω @ 65A, 10V | 4V @ 150μA | 22A Ta 108A Tc | 108nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPI70N12S311AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb70n12s311atma1-datasheets-7908.pdf | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 70A | 280A | 0.0116Ohm | 410 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 500V | 8A | TO-220-3 | Lead Free | 125W | TO-220AB | 8A | 20V | 500V | 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY08N100P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 42W Tc | N-Channel | 240pF @ 25V | 20 Ω @ 400mA, 10V | 4V @ 50μA | 800mA Tc | 11.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY02N50D-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | https://pdf.utmel.com/r/datasheets/ixys-ixty02n50dtrl-datasheets-8387.pdf | 24 Weeks |
