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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STW20N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stw20n90k5-datasheets-8429.pdf | TO-247-3 | 17 Weeks | STW20N | 900V | 250W Tc | N-Channel | 1500pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 100μA | 20A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF21N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp21n90k5-datasheets-4557.pdf | TO-220-3 Full Pack | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | SINGLE | STF21 | 3 | 40W | 1 | FET General Purpose Power | 17 ns | 27ns | 40 ns | 52 ns | 18.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 17A | 68A | 0.299Ohm | 170 mJ | 900V | N-Channel | 1645pF @ 100V | 299m Ω @ 9A, 10V | 5V @ 100μA | 18.5A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STW45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stwa45n65m5-datasheets-9836.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 78MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STW45N | Single | 208W | 1 | 79.5 ns | 79.5 ns | 35A | 25V | SILICON | SWITCHING | 210W Tc | 650V | N-Channel | 3375pF @ 100V | 78m Ω @ 19.5A, 10V | 5V @ 250μA | 35A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STP34NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb34nm60n-datasheets-1611.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 105MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP34N | 3 | Single | 210W | 1 | FET General Purpose Power | 17 ns | 34ns | 70 ns | 106 ns | 29A | 25V | SILICON | SWITCHING | 3V | 250W Tc | TO-220AB | 600V | N-Channel | 2722pF @ 100V | 105m Ω @ 14.5A, 10V | 4V @ 250μA | 29A Tc | 80nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| FCH041N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch041n60e-datasheets-8449.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 12 Weeks | 6.39g | 2 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 592W | 1 | FET General Purpose Power | R-PSFM-T3 | 50 ns | 50ns | 85 ns | 320 ns | 77A | 20V | SILICON | SWITCHING | 592W Tc | 600V | N-Channel | 13700pF @ 100V | 41m Ω @ 39A, 10V | 3.5V @ 250μA | 77A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTH21N50 | IXYS | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth24n50-datasheets-4211.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 250mOhm | 3 | yes | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 33ns | 30 ns | 65 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 84A | 500V | N-Channel | 4200pF @ 25V | 250m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFPS37N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfps37n50a-datasheets-0452.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 130mOhm | 3 | No | 1 | Single | 446W | 1 | SUPER-247™ (TO-274AA) | 5.579nF | 23 ns | 98ns | 80 ns | 52 ns | 36A | 30V | 500V | 4V | 446W Tc | 130mOhm | 400V | N-Channel | 5579pF @ 25V | 130mOhm @ 22A, 10V | 4V @ 250μA | 36A Tc | 180nC @ 10V | 130 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPW60R099C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r099c6xksa1-datasheets-1717.pdf | TO-247-3 | 3 | 26 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 278W Tc | 37.9A | 112A | 0.099Ohm | 796 mJ | N-Channel | 2660pF @ 100V | 99m Ω @ 18.1A, 10V | 3.5V @ 1.21mA | 37.9A Tc | 119nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP20N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb20n95k5-datasheets-5261.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 330MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STP20N | 3 | Single | 250W | 1 | FET General Purpose Power | 17 ns | 12ns | 20 ns | 70 ns | 17.5A | 30V | SILICON | SWITCHING | 250W Tc | TO-220AB | 62A | 950V | N-Channel | 1500pF @ 100V | 330m Ω @ 9A, 10V | 5V @ 100μA | 17.5A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SIHB30N60E-GE3 | Vishay Siliconix | $4.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb30n60ee3-datasheets-9414.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 125mOhm | 3 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 1 | Single | 30 | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | SILICON | SWITCHING | 2V | 250W Tc | 65A | 690 mJ | 600V | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STP28NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf28nm50n-datasheets-2104.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 158mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP28N | 3 | Single | 90W | 1 | FET General Purpose Power | 13.6 ns | 19ns | 52 ns | 62 ns | 21A | 25V | SILICON | SWITCHING | 3V | 150W Tc | TO-220AB | 84A | 500V | N-Channel | 1735pF @ 25V | 158m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 50nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| IPP051N15N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp051n15n5aksa1-datasheets-8345.pdf | TO-220-3 | 20.7mm | 3 | 13 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 300W | 1 | 175°C | R-PSFM-T3 | 19.6 ns | 25.5 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 500mW Tc | TO-220AB | 480A | 230 mJ | 150V | N-Channel | 7800pF @ 75V | 5.1m Ω @ 60A, 10V | 4.6V @ 264μA | 100nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP023N10N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp023n10n5aksa1-datasheets-8350.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 33 ns | 26ns | 29 ns | 77 ns | 120A | 20V | 100V | SILICON | DRAIN | SWITCHING | 3V | 375W Tc | TO-220AB | 480A | 979 mJ | 100V | N-Channel | 15600pF @ 50V | 2.3m Ω @ 100A, 10V | 3.8V @ 270μA | 120A Tc | 210nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STW28NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf28nm50n-datasheets-2104.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 158mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STW28N | 3 | Single | 150W | 1 | FET General Purpose Power | 13.6 ns | 19ns | 52 ns | 62 ns | 21A | 25V | SILICON | SWITCHING | 3V | 150W Tc | 84A | 500V | N-Channel | 1735pF @ 25V | 158m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 50nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| FDH45N50F-F133 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdh45n50ff133-datasheets-8361.pdf | TO-247-3 | 3 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 625W Tc | TO-247AD | 45A | 180A | 0.12Ohm | 1868 mJ | N-Channel | 6630pF @ 25V | 120m Ω @ 22.5A, 10V | 5V @ 250μA | 45A Tc | 137nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STW46NF30 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb46nf30-datasheets-9739.pdf | TO-247-3 | Lead Free | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STW46N | Single | 300W | FET General Purpose Power | 25 ns | 38ns | 46 ns | 80 ns | 42A | 20V | 300W Tc | 300V | N-Channel | 3200pF @ 25V | 75m Ω @ 17A, 10V | 4V @ 250μA | 42A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP56N30X3 | IXYS | $7.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh56n30x3-datasheets-4872.pdf | TO-220-3 | 19 Weeks | 300V | 320W Tc | N-Channel | 3.75nF @ 25V | 27m Ω @ 28A, 10V | 4.5V @ 1.5mA | 56A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH10P50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixta10p50ptrl-datasheets-0774.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 750mOhm | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 28ns | 44 ns | 52 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 500V | 300W Tc | 30A | 1500 mJ | -500V | P-Channel | 2840pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP120N20NFDAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipp120n20nfdaksa1-datasheets-8380.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | Single | 300W | 1 | 13 ns | 10ns | 8 ns | 24 ns | 84A | 20V | 200V | SILICON | DRAIN | 300W Tc | TO-220AB | N-Channel | 6650pF @ 100V | 12m Ω @ 84A, 10V | 4V @ 270μA | 84A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| LSIC1MO170E1000 | Littelfuse Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/littelfuseinc-lsic1mo170e1000-datasheets-8385.pdf | TO-247-3 | 25 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1700V | 54W Tc | N-Channel | 200pF @ 1000V | 1 Ω @ 2A, 20V | 4V @ 1mA | 5A Tc | 15nC @ 20V | 15V 20V | +22V, -6V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCA47N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fca47n60f109-datasheets-1803.pdf | 600V | 47A | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | Lead Free | 3 | 12 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 417W | 1 | FET General Purpose Power | Not Qualified | 185 ns | 210ns | 75 ns | 520 ns | 47A | 30V | SILICON | SWITCHING | 5V | 417W Tc | 0.07Ohm | 600V | N-Channel | 8000pF @ 25V | 5 V | 70m Ω @ 23.5A, 10V | 5V @ 250μA | 47A Tc | 270nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STW30N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw30n80k5-datasheets-8398.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW30N | NOT SPECIFIED | 800V | 250W Tc | N-Channel | 1530pF @ 100V | 180m Ω @ 12A, 10V | 5V @ 100μA | 24A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP31N50LPBF | Vishay Siliconix | $4.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp31n50l-datasheets-5920.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 180mOhm | 3 | Tin | No | 1 | Single | 460W | 1 | TO-247-3 | 5nF | 28 ns | 115ns | 53 ns | 54 ns | 31A | 30V | 500V | 5V | 460W Tc | 180mOhm | 500V | N-Channel | 5000pF @ 25V | 5 V | 180mOhm @ 19A, 10V | 5V @ 250μA | 31A Tc | 210nC @ 10V | 180 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFP4N100Q | IXYS | $5.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n100q-datasheets-5554.pdf | TO-220-3 | Lead Free | 3 | 8 Weeks | No SVHC | 3Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | Pure Tin (Sn) | 3 | Single | 150W | 1 | FET General Purpose Power | 15ns | 18 ns | 32 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 5V | 150W Tc | TO-220AB | 4A | 700 mJ | 1kV | N-Channel | 1050pF @ 25V | 3 Ω @ 2A, 10V | 5V @ 1.5mA | 4A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTP6N50D2 | IXYS | $6.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixta6n50d2-datasheets-1686.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | UL RECOGNIZED | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | TO-220AB | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDA50N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdh50n50f133-datasheets-4678.pdf | 500V | 48A | TO-3P-3, SC-65-3 | 15.6mm | 19.9mm | 4.8mm | Lead Free | 3 | 17 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 625W | 1 | FET General Purpose Power | 105 ns | 360ns | 230 ns | 225 ns | 48A | 20V | SILICON | SWITCHING | 5V | 625W Tc | 500V | N-Channel | 6460pF @ 25V | 105m Ω @ 24A, 10V | 5V @ 250μA | 48A Tc | 137nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STW30N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti30n65m5-datasheets-9729.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 139mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Tin (Sn) | STW30N | 3 | Single | 140W | 1 | FET General Purpose Power | 50 ns | 8ns | 10 ns | 50 ns | 22A | 25V | SILICON | SWITCHING | 140W Tc | 88A | 500 mJ | 650V | N-Channel | 2880pF @ 100V | 139m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 64nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IPW60R080P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r080p7xksa1-datasheets-8303.pdf | TO-247-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 129W Tc | 110A | 0.08Ohm | 118 mJ | N-Channel | 2180pF @ 400V | 80m Ω @ 11.8A, 10V | 4V @ 590μA | 37A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP32NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf32nm50n-datasheets-6674.pdf | TO-220-3 | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STP32N | Single | NOT SPECIFIED | 190W | 1 | FET General Purpose Power | R-PSFM-T3 | 9.5ns | 23.6 ns | 110 ns | 22A | 25V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-220AB | 88A | 340 mJ | 500V | N-Channel | 1973pF @ 50V | 130m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 62.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SIHG32N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg32n50de3-datasheets-9768.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 27 ns | 75ns | 55 ns | 58 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 3V | 390W Tc | TO-247AC | 89A | 225 mJ | N-Channel | 2550pF @ 100V | 150m Ω @ 16A, 10V | 5V @ 250μA | 30A Tc | 96nC @ 10V | 10V | ±30V |
