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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STW50N65DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw50n65dm2ag-datasheets-8702.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW50N | NOT SPECIFIED | 28A | 650V | 300W Tc | N-Channel | 3200pF @ 100V | 87m Ω @ 19A, 10V | 5V @ 250μA | 28A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFW40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf40n60m2-datasheets-9731.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STFW | Single | NOT SPECIFIED | 20.5 ns | 96 ns | 34A | 25V | 600V | 63W Tc | N-Channel | 2500pF @ 100V | 88m Ω @ 17A, 10V | 4V @ 250μA | 34A Tc | 57nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N120 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixtp3n120-datasheets-9177.pdf | 1.2kV | 3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 28 Weeks | 4.5Ohm | 3 | No | Single | 150W | 1 | TO-263 (IXTA) | 1.35nF | 15ns | 18 ns | 32 ns | 3A | 20V | 1200V | 200W Tc | 4.5Ohm | 1.1kV | N-Channel | 1350pF @ 25V | 4.5Ohm @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 42nC @ 10V | 4.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH150N25X3 | IXYS | $14.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh150n25x3hv-datasheets-4378.pdf | TO-247-3 | 19 Weeks | 250V | 780W Tc | N-Channel | 10400pF @ 25V | 9m Ω @ 75A, 10V | 4.5V @ 4mA | 150A Tc | 154nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0075120K | Cree/Wolfspeed | $17.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | TO-247-4 | 16 Weeks | TO-247-4L | 1200V | 113.6W Tc | 75mOhm | N-Channel | 1350pF @ 1000V | 90mOhm @ 20A, 15V | 4V @ 5mA | 30A Tc | 51nC @ 15V | 15V | +19V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3206LDGB | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206lsb-datasheets-2033.pdf | 3-PowerDFN | 10 Weeks | unknown | NOT SPECIFIED | NOT SPECIFIED | 650V | 81W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 16A Tc | 9.3nC @ 4.5V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCH023N65S3L4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fch023n65s3l4-datasheets-8729.pdf | TO-247-4 | 12 Weeks | 6.289g | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 75A | 650V | 595W Tc | N-Channel | 7160pF @ 400V | 23m Ω @ 37.5A, 10V | 4.5V @ 7.5mA | 75A Tc | 222nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW65N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw65n80k5-datasheets-8741.pdf | TO-247-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW65N | NOT SPECIFIED | 46A | 800V | 446W Tc | N-Channel | 3230pF @ 100V | 80m Ω @ 23A, 10V | 5V @ 100μA | 46A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb45n65m5-datasheets-1527.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW RESISTANCE | Tin | No | STF45N | Single | 40W | 1 | FET General Purpose Powers | 79.5 ns | 79.5 ns | 35A | 25V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 140A | 0.078Ohm | 810 mJ | 650V | N-Channel | 3375pF @ 100V | 78m Ω @ 19.5A, 10V | 5V @ 250μA | 35A Tc | 91nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| IXFX100N65X2 | IXYS | $74.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixfx100n65x2-datasheets-8750.pdf | TO-247-3 | 19 Weeks | unknown | 100A | 650V | 1040W Tc | N-Channel | 11300pF @ 25V | 30m Ω @ 50A, 10V | 5.5V @ 4mA | 100A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT50N85XHV | IXYS | $14.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfk50n85x-datasheets-1394.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | 50A | 850V | 890W Tc | N-Channel | 4480pF @ 25V | 105m Ω @ 500mA, 10V | 5.5V @ 4mA | 50A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R040CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/infineontechnologies-ipp60r125cfd7xksa1-datasheets-6382.pdf | TO-247-3 | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 227W Tc | N-Channel | 4354pF @ 400V | 40m Ω @ 24.9A, 10V | 4.5V @ 1.25mA | 50A Tc | 109nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R060P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r060p7xksa1-datasheets-8687.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 29W Tc | TO-220AB | 151A | 0.06Ohm | 159 mJ | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX98N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfx98n50p3-datasheets-8690.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | EAR99 | AVALANCHE RATED | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 35 ns | 8ns | 6 ns | 65 ns | 98A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 245A | 0.05Ohm | 2000 mJ | 500V | N-Channel | 13100pF @ 25V | 50m Ω @ 500mA, 10V | 5V @ 8mA | 98A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IPW60R070C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r070c6fksa1-datasheets-8623.pdf | TO-247-3 | 3 | 2 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 391W Tc | TO-247AA | 53A | 159A | 0.07Ohm | 1135 mJ | N-Channel | 3800pF @ 100V | 70m Ω @ 25.8A, 10V | 3.5V @ 1.72mA | 53A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF300P226 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/infineontechnologies-irf300p226-datasheets-8628.pdf | TO-247-3 | 26 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 300V | 556W Tc | N-Channel | 10030pF @ 50V | 19m Ω @ 45A, 10V | 4V @ 270μA | 100A | 191nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT120N30X3HV | IXYS | $17.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n30x3-datasheets-9080.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 300V | 735W Tc | N-Channel | 10.5nF @ 25V | 11m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMW120R220M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r220m1hxksa1-datasheets-8636.pdf | TO-247-3 | 20 Weeks | 1.2kV | 75W Tc | N-Channel | 289pF @ 800V | 286m Ω @ 4A, 18V | 5.7V @ 1.6mA | 13A Tc | 8.5nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0120090J | Cree/Wolfspeed | $10.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/wolfspeed-c3m0120090j-datasheets-9878.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 16 Weeks | No SVHC | 7 | D2PAK-7 | 22A | 900V | 2.1V | 83W Tc | 120mOhm | N-Channel | 350pF @ 600V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 22A Tc | 17.3nC @ 15V | 15V | +18V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW58N65DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw58n65dm2ag-datasheets-8642.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW58N | NOT SPECIFIED | 48A | 650V | 360W Tc | N-Channel | 4100pF @ 100V | 65m Ω @ 24A, 10V | 5V @ 250μA | 48A Tc | 88nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL033N65S3HF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nthl033n65s3hf-datasheets-8646.pdf | TO-247-3 | 12 Weeks | yes | not_compliant | e3 | Tin (Sn) | 650V | 500W Tc | N-Channel | 6720pF @ 400V | 33m Ω @ 35A, 10V | 5V @ 2.5mA | 70A Tc | 188nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4368PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfp4368pbf-datasheets-8650.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.85MOhm | 3 | EAR99 | No | Single | 520W | 1 | FET General Purpose Power | 43 ns | 220ns | 260 ns | 170 ns | 350A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 520W Tc | TO-247AC | 200 ns | 75V | N-Channel | 19230pF @ 50V | 4 V | 1.85m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 570nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP65R045C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r045c7xksa1-datasheets-8660.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 227W | 1 | 20 ns | 14ns | 7 ns | 82 ns | 46A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 227W Tc | TO-220AB | 0.045Ohm | 249 mJ | N-Channel | 4340pF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 46A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TP65H070LDG | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TP65H070L | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Cascode Gallium Nitride FET) | https://pdf.utmel.com/r/datasheets/transphorm-tdhb65h070ldc-datasheets-9310.pdf | 3-PowerDFN | 12 Weeks | 650V | 96W Tc | N-Channel | 600pF @ 400V | 85m Ω @ 16A, 10V | 4.8V @ 700μA | 25A Tc | 9.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg47n60ee3-datasheets-8669.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 38.000013g | Unknown | 64mOhm | 3 | No | 1 | Single | 357W | 1 | TO-247AC | 9.62nF | 24 ns | 11ns | 13 ns | 94 ns | 47A | 20V | 600V | 2.5V | 357W Tc | 64mOhm | 600V | N-Channel | 9620pF @ 100V | 64mOhm @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 64 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IPW60R070P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r070p6xksa1-datasheets-8676.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 23 ns | 15ns | 4 ns | 64 ns | 53.5A | 30V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 391W Tc | 156A | 0.07Ohm | N-Channel | 4750pF @ 100V | 70m Ω @ 20.6A, 10V | 4.5V @ 1.72mA | 53.5A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTT90P10P | IXYS | $10.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt90p10p-datasheets-8682.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 462W Tc | 225A | 0.025Ohm | 2500 mJ | P-Channel | 5800pF @ 25V | 25m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| C3M0065090J | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2006 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 16 Weeks | No SVHC | 7 | D2PAK-7 | 35A | 900V | 2.1V | 113W Tc | 65mOhm | N-Channel | 660pF @ 600V | 78mOhm @ 20A, 15V | 2.1V @ 5mA | 35A Tc | 30nC @ 15V | 15V | +19V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH1N200P3 | IXYS | $7.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixta1n200p3hv-datasheets-1754.pdf | TO-247-3 | 8 Weeks | NOT SPECIFIED | NOT SPECIFIED | 1A | 2000V | 125W Tc | N-Channel | 646pF @ 25V | 40 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 23.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP34NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb34nm60nd-datasheets-1665.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 110MOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP34N | 3 | Single | 190W | 1 | FET General Purpose Power | 30 ns | 53.4ns | 61.8 ns | 111 ns | 29A | 25V | SILICON | DRAIN | SWITCHING | 4V | 190W Tc | TO-220AB | 600V | N-Channel | 2785pF @ 50V | 110m Ω @ 14.5A, 10V | 5V @ 250μA | 29A Tc | 80.4nC @ 10V | 10V | ±25V |
