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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP34NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb34nm60nd-datasheets-1665.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 110MOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) | STP34N | 3 | Single | 190W | 1 | FET General Purpose Power | 30 ns | 53.4ns | 61.8 ns | 111 ns | 29A | 25V | SILICON | DRAIN | SWITCHING | 4V | 190W Tc | TO-220AB | 600V | N-Channel | 2785pF @ 50V | 110m Ω @ 14.5A, 10V | 5V @ 250μA | 29A Tc | 80.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| IRFP4768PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irfp4768pbf-datasheets-8561.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 17.5MOhm | 3 | EAR99 | Tin | No | Single | 520W | 1 | 36 ns | 160ns | 110 ns | 57 ns | 93A | 20V | 250V | SILICON | DRAIN | SWITCHING | 5V | 520W Tc | TO-247AC | 770 mJ | 250V | N-Channel | 10880pF @ 50V | 5 V | 17.5m Ω @ 56A, 10V | 5V @ 250μA | 93A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| C3M0120100K | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/creewolfspeed-c3m0120100k-datasheets-8570.pdf | TO-247-4 | 4 | 16 Weeks | IEC-60747-8-4 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 83W Tc | 22A | 50A | 0.155Ohm | N-Channel | 350pF @ 600V | 155m Ω @ 15A, 15V | 3.5V @ 3mA | 22A Tc | 21.5nC @ 15V | 15V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH36N60P | IXYS | $10.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixft36n60p-datasheets-4150.pdf | 600V | 36A | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 650W | 1 | Not Qualified | 30 ns | 25ns | 22 ns | 80 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 5V | 650W Tc | TO-247AD | 80A | 0.19Ohm | 1500 mJ | 600V | N-Channel | 5800pF @ 25V | 190m Ω @ 18A, 10V | 5V @ 4mA | 36A Tc | 102nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TPH3206PS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206ps-datasheets-8576.pdf | TO-220-3 | 14 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW48N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw48n60m2-datasheets-8581.pdf | TO-247-3 | Lead Free | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STW48N | NOT SPECIFIED | FET General Purpose Power | 42A | Single | 600V | 300W Tc | N-Channel | 3060pF @ 100V | 70m Ω @ 21A, 10V | 4V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT20P50P | IXYS | $10.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth20p50p-datasheets-2496.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 460W Tc | 60A | 0.45Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 450m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 103nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF250P224 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irf250p224-datasheets-8587.pdf | TO-247-3 | 3 | 26 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 313W Tc | TO-247AC | 96A | 384A | 0.012Ohm | 496 mJ | N-Channel | 9915pF @ 50V | 12m Ω @ 58A, 10V | 4V @ 270μA | 96A Tc | 203nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| LSIC1MO120E0160 | Littelfuse Inc. | $9.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/littelfuseinc-lsic1mo120e0160-datasheets-8592.pdf | TO-247-3 | 25 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 1200V | 125W Tc | N-Channel | 870pF @ 800V | 200m Ω @ 10A, 20V | 4V @ 5mA | 22A Tc | 57nC @ 20V | 20V | +22V, -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R045C7FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r045c7fksa1-datasheets-8596.pdf | TO-247-3 | 25.4mm | Lead Free | 3 | 18 Weeks | 3 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 227W | 1 | 150°C | 20 ns | 14ns | 7 ns | 82 ns | 46A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 227W Tc | 0.045Ohm | 249 mJ | 650V | N-Channel | 4340pF @ 400V | 45m Ω @ 24.9A, 10V | 4V @ 1.25mA | 46A Tc | 93nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STW34NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb34nm60nd-datasheets-1665.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 110MOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | STW34N | 3 | Single | 190W | 1 | FET General Purpose Power | 30 ns | 53.4ns | 61.8 ns | 111 ns | 29A | 25V | SILICON | DRAIN | SWITCHING | 4V | 190W Tc | 600V | N-Channel | 2785pF @ 50V | 110m Ω @ 14.5A, 10V | 5V @ 250μA | 29A Tc | 80.4nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| STW26NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw26nm50-datasheets-8605.pdf | 500V | 30A | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 9.071847g | No SVHC | 120mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW26N | 3 | 1 | Single | 313W | 1 | FET General Purpose Power | 150°C | 28 ns | 15ns | 19 ns | 13 ns | 30A | 30V | SILICON | SWITCHING | 3V | 313W Tc | 26A | 740 mJ | 500V | N-Channel | 3000pF @ 25V | 120m Ω @ 13A, 10V | 5V @ 250μA | 30A Tc | 106nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFH76N07-11 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh76n0712-datasheets-1335.pdf | 70V | 76A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 11mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | 70ns | 55 ns | 130 ns | 76A | 20V | 70V | SILICON | DRAIN | SWITCHING | 3.4V | 360W Tc | 2000 mJ | 70V | N-Channel | 4400pF @ 25V | 3.4 V | 11m Ω @ 40A, 10V | 3.4V @ 4mA | 76A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFH60N65X2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/ixys-ixfh60n65x2-datasheets-9835.pdf | TO-247-3 | 19 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 650V | 780W Tc | N-Channel | 6180pF @ 25V | 52m Ω @ 30A, 10V | 5.5V @ 4mA | 60A Tc | 107nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK62N60X,S1F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/toshibasemiconductorandstorage-tk62n60xs1f-datasheets-8548.pdf | TO-247-3 | 3 | 16 Weeks | 38.000013g | yes | unknown | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 90 ns | 40ns | 10 ns | 240 ns | 61.8A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 247A | 0.04Ohm | 698 mJ | 600V | N-Channel | 6500pF @ 300V | 40m Ω @ 21A, 10V | 3.5V @ 3.1mA | 61.8A Ta | 135nC @ 10V | Super Junction | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R080CFDFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r080cfdfksa2-datasheets-3913.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700V | 650V | 391W Tc | 43.3A | 137A | 0.08Ohm | 1160 mJ | N-Channel | 5030pF @ 100V | 80m Ω @ 17.6A, 10V | 4.5V @ 1.76mA | 43.3A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP23N50LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp23n50l-datasheets-5502.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 235mOhm | 3 | No | 1 | Single | 370W | 1 | TO-247-3 | 3.6nF | 26 ns | 94ns | 45 ns | 53 ns | 23A | 30V | 500V | 5V | 370W Tc | 190mOhm | 500V | N-Channel | 3600pF @ 25V | 5 V | 235mOhm @ 14A, 10V | 5V @ 250μA | 23A Tc | 150nC @ 10V | 235 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FCH040N65S3-F155 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fch040n65s3f155-datasheets-8475.pdf | TO-247-3 | 12 Weeks | 6.39g | ACTIVE (Last Updated: 5 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 650V | 417W Tc | N-Channel | 4740pF @ 400V | 40m Ω @ 32.5A, 10V | 4.5V @ 6.5mA | 65A Tc | 136nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3006PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3006trlpbf-datasheets-3151.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | 2.5MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 375W | 1 | FET General Purpose Power | 16 ns | 182ns | 189 ns | 118 ns | 270A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 375W Tc | 60V | N-Channel | 8970pF @ 50V | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 195A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDH44N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdh44n50-datasheets-8496.pdf | 500V | 44A | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 7 Weeks | 6.39g | No SVHC | 120mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 750W | 1 | FET General Purpose Power | 16 ns | 84ns | 79 ns | 45 ns | 44A | 30V | 500V | SILICON | DRAIN | SWITCHING | 3.15V | 750W Tc | 500V | N-Channel | 5335pF @ 25V | 3.15 V | 120m Ω @ 22A, 10V | 4V @ 250μA | 44A Tc | 108nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFP32N50KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp32n50k-datasheets-5497.pdf | 500V | 32A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 11 Weeks | 38.000013g | No SVHC | 135mOhm | 3 | Tin | No | 1 | Single | 460W | 1 | TO-247-3 | 5.28nF | 28 ns | 120ns | 54 ns | 48 ns | 32A | 30V | 500V | 5V | 460W Tc | 160mOhm | 500V | N-Channel | 5280pF @ 25V | 5 V | 160mOhm @ 32A, 10V | 5V @ 250μA | 32A Tc | 190nC @ 10V | 160 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IXFA72N30X3 | IXYS | $8.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa72n30x3-datasheets-8512.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 25 Weeks | 300V | 390W Tc | N-Channel | 5.4nF @ 25V | 19m Ω @ 36A, 10V | 4.5V @ 1.5mA | 72A Tc | 82nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH15N50L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixth15n50l2-datasheets-9825.pdf | TO-247-3 | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 15A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 300W Tc | 0.48Ohm | 750 mJ | N-Channel | 4080pF @ 25V | 2.5 V | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 15A Tc | 123nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N100 | IXYS | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n90-datasheets-7658.pdf | 1kV | 6A | TO-247-3 | Lead Free | 3 | 8 Weeks | No SVHC | 2Ohm | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | 40ns | 60 ns | 100 ns | 6A | 20V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 4.5V | 180W Tc | 250 ns | 6A | 24A | 1kV | N-Channel | 2600pF @ 25V | 4.5 V | 2 Ω @ 500mA, 10V | 4.5V @ 2.5mA | 6A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STP30N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti30n65m5-datasheets-9729.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) | SINGLE | STP30N | 3 | 140W | 1 | FET General Purpose Power | 50 ns | 8ns | 10 ns | 50 ns | 22A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 140W Tc | TO-220AB | 88A | 500 mJ | 650V | N-Channel | 2880pF @ 100V | 139m Ω @ 11A, 10V | 5V @ 250μA | 22A Tc | 64nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| SCT2280KEC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohm-sct2280kec-datasheets-9831.pdf | TO-247-3 | 15.9mm | 5.03mm | 20.95mm | Lead Free | 3 | 19 Weeks | Unknown | 280mOhm | 3 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 19 ns | 19ns | 29 ns | 47 ns | 14A | 22V | SWITCHING | 1200V | 4V | 108W Tc | 1.2kV | N-Channel | 667pF @ 800V | 4 V | 364m Ω @ 4A, 18V | 4V @ 1.4mA | 14A Tc | 36nC @ 18V | 18V | +22V, -6V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STF21N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp21n90k5-datasheets-4557.pdf | TO-220-3 Full Pack | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | SINGLE | STF21 | 3 | 40W | 1 | FET General Purpose Power | 17 ns | 27ns | 40 ns | 52 ns | 18.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 17A | 68A | 0.299Ohm | 170 mJ | 900V | N-Channel | 1645pF @ 100V | 299m Ω @ 9A, 10V | 5V @ 100μA | 18.5A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STW45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stwa45n65m5-datasheets-9836.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 78MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STW45N | Single | 208W | 1 | 79.5 ns | 79.5 ns | 35A | 25V | SILICON | SWITCHING | 210W Tc | 650V | N-Channel | 3375pF @ 100V | 78m Ω @ 19.5A, 10V | 5V @ 250μA | 35A Tc | 91nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP34NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb34nm60n-datasheets-1611.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 105MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP34N | 3 | Single | 210W | 1 | FET General Purpose Power | 17 ns | 34ns | 70 ns | 106 ns | 29A | 25V | SILICON | SWITCHING | 3V | 250W Tc | TO-220AB | 600V | N-Channel | 2722pF @ 100V | 105m Ω @ 14.5A, 10V | 4V @ 250μA | 29A Tc | 80nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| FCH041N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch041n60e-datasheets-8449.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | Lead Free | 3 | 12 Weeks | 6.39g | 2 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 592W | 1 | FET General Purpose Power | R-PSFM-T3 | 50 ns | 50ns | 85 ns | 320 ns | 77A | 20V | SILICON | SWITCHING | 592W Tc | 600V | N-Channel | 13700pF @ 100V | 41m Ω @ 39A, 10V | 3.5V @ 250μA | 77A Tc | 380nC @ 10V | 10V | ±20V |
