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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STFW69N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw69n65m5-datasheets-0121.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | Lead Free | 12 Weeks | 45mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STFW | Single | 70W | 1 | 102 ns | 102 ns | 58A | 25V | 79W Tc | 650V | N-Channel | 6420pF @ 100V | 45m Ω @ 29A, 10V | 5V @ 250μA | 58A Tc | 143nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT170N25X3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh170n25x3-datasheets-2189.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | yes | 250V | 960W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0065100J | Cree/Wolfspeed | $18.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/wolfspeed-c3m0065100j-datasheets-9977.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 16 Weeks | D2PAK-7 | 1000V | 113.5W Tc | 65mOhm | N-Channel | 660pF @ 600V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35A Tc | 35nC @ 15V | 15V | +15V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT30N60L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtt30n60l2-datasheets-9983.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | PURE TIN | SINGLE | GULL WING | 4 | 540W | 1 | R-PSSO-G2 | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 2.5V | 540W Tc | 80A | 0.24Ohm | 2000 mJ | N-Channel | 10700pF @ 25V | 240m Ω @ 15A, 10V | 4.5V @ 250μA | 30A Tc | 335nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STWA40N95DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Through Hole | -55°C~150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw40n95dk5-datasheets-8759.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STWA40 | 950V | 450W Tc | N-Channel | 3480pF @ 100V | 130m Ω @ 19A, 10V | 5V @ 100μA | 38A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK90N20Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfx90n20q-datasheets-0699.pdf | 200V | 90A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 22MOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 31ns | 12 ns | 82 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 200 ns | 2500 mJ | 200V | N-Channel | 6800pF @ 25V | 22m Ω @ 45A, 10V | 4V @ 4mA | 90A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTT16P60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth16p60p-datasheets-8613.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 460W Tc | TO-247 | 48A | 0.72Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 720m Ω @ 500mA, 10V | 4.5V @ 250μA | 16A Tc | 92nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK66N85X | IXYS | $26.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfk66n85x-datasheets-8865.pdf | TO-264-3, TO-264AA | 19 Weeks | yes | 66A | 850V | 1250W Tc | N-Channel | 8900pF @ 25V | 65m Ω @ 500mA, 10V | 5.5V @ 8mA | 66A Tc | 230nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN180N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Chassis Mount, Panel | Chassis Mount | -55°C~175°C TJ | Box | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn180n15p-datasheets-8867.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 24 Weeks | No SVHC | 11MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 680W | 1 | Not Qualified | 30 ns | 32ns | 36 ns | 150 ns | 150A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 680W Tc | 380A | 150V | N-Channel | 7000pF @ 25V | 11m Ω @ 90A, 10V | 5V @ 4mA | 150A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFX64N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk64n60p-datasheets-9087.pdf | 600V | 64A | TO-247-3 | Lead Free | 3 | 30 Weeks | 96MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.04kW | 1 | Not Qualified | 23ns | 24 ns | 79 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 150A | 600V | N-Channel | 12000pF @ 25V | 96m Ω @ 500mA, 10V | 5V @ 8mA | 64A Tc | 200nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STF25N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp25n80k5-datasheets-2009.pdf | TO-220-3 Full Pack | 10.6mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF25 | Single | 40W | 1 | FET General Purpose Power | 25 ns | 13ns | 15 ns | 60 ns | 19.5A | 30V | SILICON | ISOLATED | SWITCHING | 40W Tc | TO-220AB | 78A | 0.26Ohm | 200 mJ | 800V | N-Channel | 1600pF @ 100V | 260m Ω @ 19.5A, 10V | 5V @ 100μA | 19.5A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FCH76N60NF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fch76n60nf-datasheets-8824.pdf | TO-247-3 | 15.87mm | 20.82mm | 4.82mm | 3 | 12 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 543W | 1 | FET General Purpose Power | 51 ns | 44ns | 43 ns | 213 ns | 72.8A | 30V | SILICON | SWITCHING | 3V | 543W Tc | TO-247AB | 600V | N-Channel | 11045pF @ 100V | 38m Ω @ 38A, 10V | 5V @ 250μA | 72.8A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| C2M0080120D | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C2M™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/cree-c2m0080120d-datasheets-9967.pdf | TO-247-3 | 16.13mm | 21.1mm | 5.21mm | 16 Weeks | Unknown | 3 | No | Single | 208W | 1 | TO-247-3 | 950pF | 12 ns | 23.2 ns | 31.6A | 25V | 1200V | 3.2V | 192W Tc | 80mOhm | 1.2kV | N-Channel | 950pF @ 1000V | 1.7 V | 98mOhm @ 20A, 20V | 4V @ 5mA | 36A Tc | 62nC @ 5V | 98 mΩ | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||
| IMW120R060M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r060m1hxksa1-datasheets-8838.pdf | TO-247-3 | 20 Weeks | 1.2kV | 150W Tc | N-Channel | 1.06nF @ 800V | 78m Ω @ 13A, 18V | 5.7V @ 5.6mA | 36A Tc | 31nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R040C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipw60r040c7xksa1-datasheets-8766.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 50A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 227W Tc | 211A | 0.04Ohm | 249 mJ | N-Channel | 4340pF @ 400V | 40m Ω @ 24.9A, 10V | 4V @ 1.24mA | 50A Tc | 107nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TP65H070LSG | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TP65H070L | Surface Mount | -55°C~150°C TJ | 3 (168 Hours) | GaNFET (Cascode Gallium Nitride FET) | https://pdf.utmel.com/r/datasheets/transphorm-tdhb65h070ldc-datasheets-9310.pdf | 3-PowerDFN | 12 Weeks | 650V | 96W Tc | N-Channel | 600pF @ 400V | 85m Ω @ 16A, 10V | 4.8V @ 700μA | 25A Tc | 9.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3160KLHRC11 | ROHM Semiconductor | $30.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3160klhrc11-datasheets-8774.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1200V | 103W | N-Channel | 398pF @ 800V | 208m Ω @ 5A, 18V | 5.6V @ 2.5mA | 17A Tc | 42nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0075120J | Cree/Wolfspeed | $10.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 7 | 16 Weeks | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G7 | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 113.6W Tc | 30A | 80A | 0.09Ohm | N-Channel | 1350pF @ 1000V | 90m Ω @ 20A, 15V | 4V @ 5mA | 30A Tc | 51nC @ 15V | 15V | +19V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0065100K | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | 150°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2016 | TO-247-4 | 5.21mm | 16 Weeks | 1 | 113.5W | 150°C | TO-247-4L | 20 ns | 19 ns | 35A | 1000V | 113.5W Tc | 65mOhm | 1kV | N-Channel | 660pF @ 600V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35A Tc | 35nC @ 15V | 15V | +19V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GAN063-650WSAQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Cascode Gallium Nitride FET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-gan063650wsaq-datasheets-8789.pdf | TO-247-3 | 650V | 143W Ta | N-Channel | 1000pF @ 400V | 60m Ω @ 25A, 10V | 4.5V @ 1mA | 34.5A Ta | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW90R120C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw90r120c3fksa1-datasheets-8791.pdf | TO-247-3 | 3 | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 417W Tc | 36A | 96A | 0.12Ohm | 1940 mJ | N-Channel | 6800pF @ 100V | 120m Ω @ 26A, 10V | 3.5V @ 2.9mA | 36A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R080CFDAFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r080cfdafksa1-datasheets-8797.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | yes | EAR99 | HIGH RELIABILITY | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | 20 ns | 18ns | 6 ns | 85 ns | 43.3A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 391W Tc | 0.08Ohm | 650V | N-Channel | 4440pF @ 100V | 80m Ω @ 17.6A, 10V | 4.5V @ 1.76mA | 43.3A Tc | 161nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFH220N20X3 | IXYS | $17.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-247-3 | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R037C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r037c6fksa1-datasheets-8806.pdf | TO-247-3 | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 500W | 1 | 22 ns | 32ns | 7 ns | 140 ns | 83.2A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500W Tc | 297A | N-Channel | 7240pF @ 100V | 37m Ω @ 33.1A, 10V | 3.5V @ 3.3mA | 83.2A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STW48NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw48nm60n-datasheets-8811.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 70MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW48N | 3 | Single | 255W | 1 | FET General Purpose Power | 99 ns | 18ns | 25.5 ns | 214 ns | 44A | 25V | SILICON | SWITCHING | 3.2V | 330W Tc | 457 mJ | 600V | N-Channel | 4285pF @ 50V | 70m Ω @ 20A, 10V | 4V @ 250μA | 44A Tc | 124nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IXTX32P60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtk32p60p-datasheets-0724.pdf | TO-247-3 | 3 | 28 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 890W Tc | 96A | P-Channel | 11100pF @ 25V | 350m Ω @ 16A, 10V | 4V @ 1mA | 32A Tc | 196nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STWA40N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stw40n90k5-datasheets-5515.pdf | TO-247-3 | 17 Weeks | STWA40 | 900V | 446W Tc | N-Channel | 3260pF @ 100V | 99m Ω @ 20A, 10V | 5V @ 100μA | 40A Tc | 89nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW40N95DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DK5 | Through Hole | -55°C~150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw40n95dk5-datasheets-8759.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STW40N | 950V | 450W Tc | N-Channel | 3480pF @ 100V | 130m Ω @ 19A, 10V | 5V @ 100μA | 38A Tc | 100nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK110N07 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfk110n07-datasheets-8763.pdf | 70V | 110A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 6MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 500W | 1 | FET General Purpose Power | 60ns | 60 ns | 100 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 600A | 2000 mJ | 70V | N-Channel | 9000pF @ 25V | 6m Ω @ 55A, 10V | 4V @ 8mA | 110A Tc | 480nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFX98N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/ixys-ixfx98n50p3-datasheets-8690.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | EAR99 | AVALANCHE RATED | 3 | Single | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 35 ns | 8ns | 6 ns | 65 ns | 98A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 245A | 0.05Ohm | 2000 mJ | 500V | N-Channel | 13100pF @ 25V | 50m Ω @ 500mA, 10V | 5V @ 8mA | 98A Tc | 197nC @ 10V | 10V | ±30V |
