Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BSC020N03LSGATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 5 | 26 Weeks | yes | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 28A | 400A | 0.0029Ohm | 180 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihu5n50dge3-datasheets-4568.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 20 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 104W | 1 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 104W Tc | 28.8 mJ | 500V | N-Channel | 325pF @ 100V | 3 V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7676 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7676-datasheets-9463.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 18 Weeks | 68.1mg | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 13 ns | 5ns | 4 ns | 25 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 48W Tc | 76A | 90A | 0.0055Ohm | 72 mJ | 30V | N-Channel | 2960pF @ 15V | 2 V | 5.5m Ω @ 19A, 10V | 3V @ 250μA | 16A Ta 28A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| AOT12N40L | Alpha & Omega Semiconductor Inc. | $4.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aot12n40l-datasheets-5834.pdf | TO-220-3 | 18 Weeks | 11A | 400V | 184W Tc | N-Channel | 1110pF @ 25V | 590m Ω @ 6A, 10V | 4.5V @ 250μA | 11A Tc | 21nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N04S308ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipd50n04s308atma1-datasheets-9452.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 68W | 1 | R-PSSO-G2 | 11 ns | 7ns | 6 ns | 16 ns | 50A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 68W Tc | 200A | 0.0075Ohm | N-Channel | 2350pF @ 25V | 7.5m Ω @ 50A, 10V | 4V @ 40μA | 50A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDMS7578 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms7578-datasheets-9401.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 26 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 33W | 1 | FET General Purpose Power | R-PDSO-F5 | 8 ns | 2.6ns | 2.2 ns | 20 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 2.5W Ta 33W Tc | 63A | 60A | 40 mJ | 25V | N-Channel | 1625pF @ 13V | 1.6 V | 5.8m Ω @ 17A, 10V | 3V @ 250μA | 17A Ta 28A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFU7746PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr7746trpbf-datasheets-9480.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 12 Weeks | 11.2Ohm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 56A | 75V | 99W Tc | N-Channel | 3107pF @ 25V | 11.2m Ω @ 35A, 10V | 3.7V @ 100μA | 56A Tc | 89nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK20S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage | $0.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 780pF | 8 ns | 16ns | 24 ns | 6 ns | 20A | 20V | 60V | 38W Tc | N-Channel | 780pF @ 10V | 29mOhm @ 10A, 10V | 3V @ 1mA | 20A Ta | 18nC @ 10V | 29 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfz46nstrlpbf-datasheets-3189.pdf | 55V | 53A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 120W | 1 | FET General Purpose Power | 14 ns | 76ns | 57 ns | 52 ns | 53A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.8W Ta 107W Tc | 180A | 0.0165Ohm | 152 mJ | 55V | N-Channel | 1696pF @ 25V | 16.5m Ω @ 28A, 10V | 4V @ 250μA | 53A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| AOT7N70 | Alpha & Omega Semiconductor Inc. | $3.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Power | 7A | Single | 700V | 198W Tc | 7A | N-Channel | 1175pF @ 25V | 1.8 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH3002LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth3002lps13-datasheets-9528.pdf | 8-PowerTDFN | 5 | 24 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.2W Ta 136W Tc | 150A | 0.0025Ohm | 700 mJ | N-Channel | 5000pF @ 15V | 1.6m Ω @ 25A, 10V | 2V @ 1mA | 100A Tc | 77nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| NVMYS2D9N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys2d9n04cltwg-datasheets-9531.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.7W Ta 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 60μA | 27A Ta 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C628NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs5c628nlt3g-datasheets-9533.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.7W Ta 110W Tc | N-Channel | 3600pF @ 25V | 2.4m Ω @ 50A, 10V | 2V @ 135μA | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF520STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD7N65M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std7n65m6-datasheets-9538.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 60W Tc | N-Channel | 220pF @ 100V | 990m Ω @ 2.5A, 10V | 3.75V @ 250μA | 5A Tc | 6.9nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6010LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth6010lk3q13-datasheets-9539.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 70A | 60V | 31W Ta | N-Channel | 2090pF @ 30V | 8m Ω @ 20A, 10V | 3V @ 250μA | 14.8A Ta 70A Tc | 41.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT20N25L | Alpha & Omega Semiconductor Inc. | $1.76 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 3 | 20A | 250V | 208W Tc | N-Channel | 1028pF @ 25V | 170m Ω @ 10A, 10V | 4.5V @ 250μA | 20A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ15S06M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $3.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | No | AEC-Q101 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 13ns | 62 ns | 15A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 41W Tc | 29 mJ | P-Channel | 1770pF @ 10V | 50m Ω @ 7.5A, 10V | 3V @ 1mA | 15A Ta | 36nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R950CFDBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipd65r950cfdbtma1-datasheets-9129.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | no | HIGH RELIABILITY | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 36.7W Tc | TO-252AA | 3.9A | 11A | 0.95Ohm | 50 mJ | N-Channel | 380pF @ 100V | 950m Ω @ 1.5A, 10V | 4.5V @ 200μA | 3.9A Tc | 14.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NVTFWS010N10MCLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 18 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 100V | 3.2W Ta 77.8W Tc | N-Channel | 2150pF @ 50V | 10.6m Ω @ 15A, 10V | 3V @ 85μA | 11.7A Ta 57.8A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8020 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms8020-datasheets-9255.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 260 | Single | 30 | 65W | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 5.7ns | 4 ns | 32 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 65W Tc | MO-240AA | 42A | 0.0025Ohm | 93 mJ | 30V | N-Channel | 3800pF @ 15V | 2.5m Ω @ 26A, 10V | 3V @ 250μA | 26A Ta 42A Tc | 61nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRLR3717TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr3717trrpbf-datasheets-9384.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 89W Tc | TO-252AA | 30A | 460A | 0.004Ohm | 460 mJ | N-Channel | 2830pF @ 10V | 4m Ω @ 15A, 10V | 2.45V @ 250μA | 120A Tc | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| DMTH6005LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6005lfg7-datasheets-9393.pdf | 8-PowerVDFN | 24 Weeks | 60V | 2.38W Ta 75W Tc | N-Channel | 3150pF @ 30V | 4.1m Ω @ 20A, 10V | 2.5V @ 250μA | 19.7A Ta 100A Tc | 48.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ084N08NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz084n08ns5atma1-datasheets-9394.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N3 | 13 ns | 5ns | 5 ns | 25 ns | 40A | 20V | 80V | SILICON | DRAIN | SWITCHING | 63W Tc | 76 mJ | 80V | N-Channel | 1820pF @ 40V | 8.4m Ω @ 20A, 10V | 3.8V @ 31μA | 40A Tc | 25nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| VN0104N3-G-P013 | Microchip Technology | $0.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vn0104n3g-datasheets-8317.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | EAR99 | BOTTOM | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | O-PBCY-T3 | 3 ns | 5ns | 5 ns | 6 ns | 350mA | 20V | SILICON | SWITCHING | 1W Tc | 0.35A | 3Ohm | 8 pF | 40V | N-Channel | 65pF @ 25V | 3 Ω @ 1A, 10V | 2.4V @ 1mA | 350mA Tj | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FQD12N20LTM-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqd12n20ltm-datasheets-6105.pdf&product=onsemiconductor-fqd12n20ltmf085-6849448 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 36 Weeks | 3 | EAR99 | No | e3 | Tin (Sn) | GULL WING | 260 | Single | 30 | 2.5W | 1 | R-PSSO-G2 | 15 ns | 190ns | 120 ns | 60 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 55W Tc | 200V | N-Channel | 1080pF @ 25V | 280m Ω @ 4.5A, 10V | 2V @ 250μA | 9A Tc | 21nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BUK7Y15-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y15100ex-datasheets-9193.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 15mOhm | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 1 | 11 ns | 21ns | 24 ns | 43 ns | 68A | 20V | 100V | SILICON | DRAIN | SWITCHING | 195W Tc | MO-235 | 100V | N-Channel | 3958pF @ 25V | 15m Ω @ 20A, 10V | 4V @ 1mA | 68A Tc | 54.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR2405TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfu2405pbf-datasheets-7533.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 30A | 220A | 0.016Ohm | 130 mJ | N-Channel | 2430pF @ 25V | 16m Ω @ 34A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPAN60R600P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipan60r600p7sxksa1-datasheets-9444.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 21W Tc | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6224 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aon6224-datasheets-9449.pdf | 8-PowerSMD, Flat Leads | 100V | 56.5W Tc | N-Channel | 2420pF @ 50V | 12m Ω @ 20A, 10V | 2.4V @ 250μA | 34A Tc | 50nC @ 10V | 4.5V 10V | ±20V |
