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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK20S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | DPAK+ | 820pF | 8 ns | 16ns | 24 ns | 6 ns | 20A | 20V | 40V | 38W Tc | N-Channel | 820pF @ 10V | 14mOhm @ 10A, 10V | 3V @ 1mA | 20A Ta | 18nC @ 10V | 14 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4899NFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntmfs4899nft1g-datasheets-9624.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 5MOhm | 5 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | 2.7W | 1 | FET General Purpose Power | 12.6 ns | 20.3ns | 4.2 ns | 20 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5V | 920mW Ta 48W Tc | 84 mJ | 30V | N-Channel | 1600pF @ 12V | 5m Ω @ 30A, 10V | 2.5V @ 1mA | 10.4A Ta 75A Tc | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SUD50N024-09P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n02409pe3-datasheets-9627.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 2 | yes | EAR99 | e3 | MATTE TIN OVER NICKEL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 6.5W | 1 | FET General Purpose Power | Not Qualified | 10ns | 12 ns | 25 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 6.5W Ta 39.5W Tc | 100A | 0.017Ohm | 22V | N-Channel | 1300pF @ 10V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 49A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQJ858EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj858ept1ge3-datasheets-9633.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 2500pF @ 20V | 6mOhm @ 11A, 10V | 2.5V @ 250μA | 75A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT31M7LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 23 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1.3W Ta 113W Tc | N-Channel | 5741pF @ 15V | 1.7m Ω @ 20A, 10V | 3V @ 250μA | 30A Ta 100A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMNH4005SPSQ-13 | Diodes Incorporated | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmnh4005spsq13-datasheets-9636.pdf | 8-PowerTDFN | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.8W | N-Channel | 2847pF @ 20V | 4m Ω @ 20A, 10V | 3V @ 250μA | 80A Tc | 48nC @ 10V | 10V | 20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD900P06NMATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd900p06nmatma1-datasheets-9638.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 60V | 63W Tc | P-Channel | 1100pF @ 30V | 90m Ω @ 16.4A, 10V | 4V @ 710μA | 16.4A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R1K0C6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl65r1k0c6satma1-datasheets-9640.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 75.891673mg | 8 | yes | EAR99 | not_compliant | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 6.6 ns | 5.2ns | 13.6 ns | 41 ns | 4.2A | 30V | 650V | SILICON | DRAIN | SWITCHING | 34.7W Tc | 1Ohm | 50 mJ | N-Channel | 328pF @ 100V | 1 Ω @ 1.5A, 10V | 3.5V @ 150μA | 4.2A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AOT2610L | Alpha & Omega Semiconductor Inc. | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | FET General Purpose Power | 55A | Single | 60V | 2.1W Ta 75W Tc | N-Channel | 2007pF @ 30V | 10.7m Ω @ 20A, 10V | 2.5V @ 250μA | 9A Ta 55A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4985NFTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nttfs4985nftwg-datasheets-9655.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 24ns | 64A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.47W Ta 22.73W Tc | 16.3A | 192A | 0.0052Ohm | 52 mJ | N-Channel | 2075pF @ 15V | 3.5m Ω @ 20A, 10V | 2.3V @ 250μA | 16.3A Ta 64A Tc | 29.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDMC8296 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8296-datasheets-9629.pdf | 8-PowerWDFN | Lead Free | 5 | 23 Weeks | 210mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.3W | 1 | FET General Purpose Power | Not Qualified | S-PDSO-N5 | 3ns | 2 ns | 19 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 27W Tc | 44A | 52A | 72 mJ | 30V | N-Channel | 1385pF @ 15V | 8m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 18A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTF3055-100T1G-IRH1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-261-4, TO-261AA | 60V | 1.3W Ta | N-Channel | 455pF @ 25V | 110m Ω @ 1.5A, 10V | 4V @ 250μA | 3A Ta | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7804DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7804dnt1e3-datasheets-3704.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | S-XDSO-C5 | 8 ns | 12ns | 12 ns | 32 ns | 6.5A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.5W Ta | 40A | N-Channel | 18.5m Ω @ 10A, 10V | 1.8V @ 250μA | 6.5A Ta | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| AOTF2610L | Alpha & Omega Semiconductor Inc. | $3.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 35A | Single | 60V | 2.1W Ta 31W Tc | N-Channel | 2007pF @ 30V | 10.7m Ω @ 20A, 10V | 2.5V @ 250μA | 9A Ta 35A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4268 | Alpha & Omega Semiconductor Inc. | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 60V | 3.1W Ta | N-Channel | 2500pF @ 30V | 4.8m Ω @ 19A, 10V | 2.3V @ 250μA | 19A Ta | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4007SPSQ-13 | Diodes Incorporated | $5.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4007spsq13-datasheets-9506.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 2.8W Ta 136W Tc | N-Channel | 2082pF @ 25V | 7.6m Ω @ 20A, 10V | 4V @ 250μA | 15.7A Ta 100A Tc | 41.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2104N3-G-P003 | Microchip Technology | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tp2104n3g-datasheets-8312.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 6 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | 1 | Single | 1 | 4 ns | 4ns | 5 ns | 5 ns | 175mA | 20V | SILICON | SWITCHING | 40V | 740mW Ta | 6Ohm | -40V | P-Channel | 60pF @ 25V | 6 Ω @ 500mA, 10V | 2V @ 1mA | 175mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| RDD020N50TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 20 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZDS020N60TB | ROHM Semiconductor | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-zds020n60tb-datasheets-9572.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | No | DUAL | GULL WING | 260 | 8 | 10 | 1 | 25 ns | 20ns | 65 ns | 65 ns | 630mA | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 2W Tc | 0.63A | 2.5A | 5Ohm | N-Channel | 310pF @ 10V | 5 Ω @ 500mA, 10V | 4V @ 1mA | 630mA Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FDMS0302S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms0302s-datasheets-9573.pdf | 8-PowerTDFN | 6mm | 1mm | 5mm | Lead Free | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 20 ns | 8ns | 5 ns | 43 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 89W Tc | 150A | 0.0019Ohm | N-Channel | 7350pF @ 15V | 1.9m Ω @ 28A, 10V | 3V @ 1mA | 29A Ta 49A Tc | 109nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| IPA60R600P7SE8228XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 Full Pack | 18 Weeks | 600V | 21W Tc | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C423NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c423nlt1g-datasheets-1851.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 4 hours ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 20V | 2m Ω @ 50A, 10V | 2V @ 250μA | 31A Ta 150A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF520STRR-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS002N04CTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs002n04ctag-datasheets-9590.pdf | 8-PowerWDFN | 18 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.2W Ta 85W Tc | N-Channel | 2250pF @ 25V | 2.4m Ω @ 50A, 10V | 3.5V @ 90μA | 27A Ta 136A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R1-60YLX | Nexperia USA Inc. | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn4r160ylx-datasheets-9591.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 238W Ta | MO-235 | 100A | 593A | 0.0048Ohm | 199 mJ | N-Channel | 7853pF @ 25V | 4.1m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Ta | 103nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTMYS4D6N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys4d6n04cltwg-datasheets-9593.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 50W Tc | N-Channel | 1300pF @ 25V | 4.5m Ω @ 35A, 10V | 2V @ 40μA | 21A Ta 78A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRS075P03TB1 | ROHM Semiconductor | $3.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 7.5A | 30V | P-Channel | 7.5A Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC020N03LSGATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 5 | 26 Weeks | yes | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 28A | 400A | 0.0029Ohm | 180 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihu5n50dge3-datasheets-4568.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 20 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 104W | 1 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 104W Tc | 28.8 mJ | 500V | N-Channel | 325pF @ 100V | 3 V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| NTMFS5H431NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmfs5h431nlt1g-datasheets-9613.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3W Ta 66W Tc | N-Channel | 1730pF @ 20V | 3.3m Ω @ 20A, 10V | 2V @ 250μA | 23A Ta 106A Tc | 28nC @ 10V | 4.5V 10V | ±20V |
