Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AON6548 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | FET General Purpose Power | 85A | Single | 30V | 7.4W Ta 83W Tc | N-Channel | 4290pF @ 15V | 1.8m Ω @ 20A, 10V | 2.2V @ 250μA | 52A Ta 85A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R950CFDBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipd65r950cfdbtma1-datasheets-9129.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | no | HIGH RELIABILITY | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 36.7W Tc | TO-252AA | 3.9A | 11A | 0.95Ohm | 50 mJ | N-Channel | 380pF @ 100V | 950m Ω @ 1.5A, 10V | 4.5V @ 200μA | 3.9A Tc | 14.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVTFWS010N10MCLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 18 Weeks | yes | compliant | NOT SPECIFIED | NOT SPECIFIED | 100V | 3.2W Ta 77.8W Tc | N-Channel | 2150pF @ 50V | 10.6m Ω @ 15A, 10V | 3V @ 85μA | 11.7A Ta 57.8A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8020 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms8020-datasheets-9255.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 260 | Single | 30 | 65W | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 5.7ns | 4 ns | 32 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 65W Tc | MO-240AA | 42A | 0.0025Ohm | 93 mJ | 30V | N-Channel | 3800pF @ 15V | 2.5m Ω @ 26A, 10V | 3V @ 250μA | 26A Ta 42A Tc | 61nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| IRLR3717TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr3717trrpbf-datasheets-9384.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 89W Tc | TO-252AA | 30A | 460A | 0.004Ohm | 460 mJ | N-Channel | 2830pF @ 10V | 4m Ω @ 15A, 10V | 2.45V @ 250μA | 120A Tc | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| RCD075N20TL | ROHM Semiconductor | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | No | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 20 ns | 22ns | 12 ns | 24 ns | 7.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 850mW Ta 20W Tc | N-Channel | 755pF @ 25V | 325m Ω @ 3.75A, 10V | 5.25V @ 1mA | 7.5A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| AOTF4N90 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 37W | 1 | FET General Purpose Power | 4A | 30V | Single | 900V | 37W Tc | 4A | N-Channel | 880pF @ 25V | 3.6 Ω @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH32M5LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 19 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 3.2W Ta 100W Tc | N-Channel | 3944pF @ 25V | 2.2m Ω @ 30A, 10V | 3V @ 1mA | 170A Tc | 68nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N06S409ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd50n06s409atma2-datasheets-9321.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 6.22mm | 2 | 12 Weeks | 3 | yes | Tin | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 15 ns | 40ns | 5 ns | 20 ns | 50A | 20V | 60V | SILICON | DRAIN | 71W Tc | 200A | 0.009Ohm | 87 mJ | N-Channel | 3785pF @ 25V | 9m Ω @ 50A, 10V | 4V @ 34μA | 50A Tc | 47.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NVMFS5C646NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c646nlaft3g-datasheets-1559.pdf | 8-PowerTDFN, 5 Leads | 60V | 3.7W Ta 79W Tc | N-Channel | 2164pF @ 25V | 4.7m Ω @ 50A, 10V | 2V @ 250μA | 20A Ta 93A Tc | 33.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD65R950C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r950c6atma1-datasheets-9334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead, Lead Free | 2 | 12 Weeks | 3.949996g | 3 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 37W | 1 | R-PSSO-G2 | 6.6 ns | 5.2ns | 13.6 ns | 41 ns | 4.5A | 20V | 650V | SILICON | SWITCHING | 37W Tc | 0.95Ohm | 50 mJ | 650V | N-Channel | 328pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 200μA | 4.5A Tc | 15.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMP3007SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 33 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD9N25TM-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | No | e3 | Tin (Sn) | SINGLE | GULL WING | 260 | 30 | 55W | 1 | R-PSSO-G2 | 13 ns | 105ns | 45 ns | 25 ns | 7.4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 55W Tc | 29.6A | 165 mJ | 250V | N-Channel | 700pF @ 25V | 420m Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| RDD022N50TL | ROHM Semiconductor | $5.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 12 ns | 17ns | 48 ns | 24 ns | 2A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20W Tc | 2A | 6A | 500V | N-Channel | 168pF @ 25V | 5.4 Ω @ 1A, 10V | 4.7V @ 1mA | 2A Tc | 6.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FDPF5N50NZF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf5n50nzf-datasheets-9348.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 30W | 1 | FET General Purpose Power | 5 ns | 19ns | 22 ns | 31 ns | 4.2A | 25V | SILICON | ISOLATED | SWITCHING | 5V | 30W Tc | TO-220AB | 500V | N-Channel | 485pF @ 25V | 1.75 Ω @ 2.1A, 10V | 5V @ 250μA | 4.2A Tc | 12nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| DMP4025LSSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4025lssq13-datasheets-9356.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 1.52W Ta | 6A | 0.045Ohm | P-Channel | 1640pF @ 20V | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 6A Ta | 33.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C646NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c646nlaft3g-datasheets-1559.pdf | 8-PowerTDFN, 5 Leads | 9 Weeks | ACTIVE (Last Updated: 17 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.7W Ta 79W Tc | N-Channel | 2164pF @ 25V | 4.7m Ω @ 50A, 10V | 2V @ 250μA | 20A Ta 93A Tc | 33.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA46EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 5000pF @ 25V | 3mOhm @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 105nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H014LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h014lss13-datasheets-9291.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | 8.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 1.2W Ta | 54A | 0.018Ohm | 85 mJ | N-Channel | 1871pF @ 50V | 15m Ω @ 20A, 10V | 3V @ 250μA | 8.9A Ta | 33.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMT10H009LCG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h009lcg7-datasheets-9294.pdf | 8-PowerVDFN | 19 Weeks | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 260 | 30 | 100V | 1W Ta | N-Channel | 2309pF @ 50V | 8.8m Ω @ 20A, 10V | 2.5V @ 250μA | 12.4A Ta 47A Tc | 20.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C628NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c628nt1g-datasheets-9039.pdf | 8-PowerTDFN, 5 Leads | 12 Weeks | yes | 60V | 3.7W Ta 110W Tc | N-Channel | 2630pF @ 30V | 3m Ω @ 27A, 10V | 4V @ 135μA | 28A Ta 150A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4668DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4668dyt1e3-datasheets-9151.pdf | 8-SOIC (0.154, 3.90mm Width) | 21 Weeks | 8 | No | Single | 2.5W | 8-SO | 1.654nF | 12ns | 18 ns | 73 ns | 16.2A | 16V | 25V | 2.5W Ta 5W Tc | 10.5mOhm | 25V | N-Channel | 1654pF @ 15V | 10.5mOhm @ 15A, 10V | 2.6V @ 250μA | 16.2A Tc | 42nC @ 10V | 10.5 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C302NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-ntmfs4c302nt1g-datasheets-9227.pdf | 8-PowerTDFN, 5 Leads | 5 | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.13W Ta 96W Tc | 900A | 0.0017Ohm | 186 mJ | N-Channel | 5780pF @ 15V | 1.15m Ω @ 30A, 10V | 2.2V @ 250μA | 41A Ta 230A Tc | 82nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C442NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c442nlaft1g-datasheets-0686.pdf | 8-PowerTDFN, 5 Leads | 7 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 25V | 2.5m Ω @ 50A, 10V | 2V @ 250μA | 29A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J304T(TE85L,F) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | No | 1 | Single | 700mW | 1 | TSM | 335pF | 20 ns | 20 ns | 2.3A | 8V | 20V | 700mW Ta | 172mOhm | -20V | P-Channel | 335pF @ 10V | 127mOhm @ 1A, 4V | 2.3A Ta | 6.1nC @ 4V | 127 mΩ | 1.8V 4V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C55NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs4c55nt1g-datasheets-0097.pdf | 8-PowerTDFN | 16 Weeks | 8 | 770mW | 78A | 30V | N-Channel | 1972pF @ 15V | 3.4m Ω @ 30A, 10V | 2.2V @ 250μA | 11.9A Ta 78A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSD080P05TL | ROHM Semiconductor | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | No | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | 3 | 1 | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 15ns | 20 ns | 50 ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | 15W Tc | 8A | P-Channel | 11000pF @ 10V | 91m Ω @ 8A, 10V | 3V @ 1mA | 8A Ta | 93.4nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TPH12008NH,L1Q | Toshiba Semiconductor and Storage | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 18 Weeks | 8 | EAR99 | unknown | Single | 48W | FET General Purpose Power | 5ns | 7.4 ns | 24 ns | 24A | 20V | 1.6W Ta 48W Tc | 44A | 80V | N-Channel | 1900pF @ 40V | 12.3m Ω @ 12A, 10V | 4V @ 300μA | 24A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF4126 | Alpha & Omega Semiconductor Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 27A | 100V | 2.1W Ta 42W Tc | N-Channel | 2200pF @ 50V | 24m Ω @ 20A, 10V | 4V @ 250μA | 6A Ta 27A Tc | 42nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3018SFG-7 | Diodes Incorporated | $2.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3018sfg13-datasheets-9659.pdf | 8-PowerVDFN | 697pF | 6 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 4.3 ns | 4.4ns | 4.1 ns | 20.1 ns | 8.5A | 25V | 1W Ta | 30V | N-Channel | 697pF @ 15V | 21m Ω @ 10A, 10V | 2.1V @ 250μA | 8.5A Ta | 13.2nC @ 10V | 4.5V 10V | ±25V |
