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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RSD131P10TL | ROHM Semiconductor | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | 20 ns | 25ns | 60 ns | 70 ns | 13A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 850mW Ta 20W Tc | P-Channel | 2400pF @ 25V | 200m Ω @ 6.5A, 10V | 2.5V @ 1mA | 13A Tc | 40nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AOL1240 | Alpha & Omega Semiconductor Inc. | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | 3-PowerSMD, Flat Leads | 18 Weeks | 3 | 69A | 40V | 2.1W Ta 125W Tc | N-Channel | 3800pF @ 20V | 3m Ω @ 20A, 10V | 2.3V @ 250μA | 19A Ta 69A Tc | 50.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf9530nstrrpbf-datasheets-0029.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 79W Tc | 14A | 56A | 0.2Ohm | 250 mJ | P-Channel | 760pF @ 25V | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC0501NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0501nsiatma1-datasheets-0037.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | yes | Tin | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 4ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 50W Tc | 29A | 400A | 0.0024Ohm | 20 mJ | N-Channel | 2200pF @ 15V | 1.9m Ω @ 30A, 10V | 2V @ 250μA | 29A Ta 100A Tc | 33nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF4S60 | Alpha & Omega Semiconductor Inc. | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | yes | No | SINGLE | 3 | 31W | 1 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 31W Tc | TO-220AB | 4A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA52DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | /files/vishay-sira52dpt1ge3-datasheets-4741.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 4.8W | 150°C | PowerPAK® SO-8 | 10 ns | 38 ns | 39.6A | 40V | 48W Tc | 1.4mOhm | 40V | N-Channel | 7150pF @ 20V | 1.7mOhm @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 150nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK35S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 58W | 1 | DPAK+ | 1.37nF | 19 ns | 9ns | 12 ns | 35 ns | 35A | 20V | 40V | 58W Tc | N-Channel | 1370pF @ 10V | 10.3mOhm @ 17.5A, 10V | 3V @ 1mA | 35A Ta | 28nC @ 10V | 10.3 Ω | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN018-100PSFQ | Nexperia USA Inc. | $2.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperia-psmn018100psfq-datasheets-5939.pdf | TO-220-3 | NOT SPECIFIED | 3 | NOT SPECIFIED | 100V | 111W Ta | N-Channel | 1482pF @ 50V | 18m Ω @ 15A, 10V | 4V @ 1mA | 53A Ta | 21.4nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD9410L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdd9410lf085-datasheets-9857.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | 260.37mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 40V | 75W Tc | N-Channel | 1960pF @ 20V | 4.2m Ω @ 50A, 10V | 3V @ 250μA | 50A Tc | 43nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ146N10LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/infineontechnologies-bsz146n10ls5atma1-datasheets-9861.pdf | 8-PowerTDFN | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7457TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7457trpbf-datasheets-9867.pdf | 20V | 15A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 14 Weeks | No SVHC | 7MOhm | 8 | No | 5A | 20V | 1 | Single | 2.5W | 150°C | 14 ns | 16ns | 7.5 ns | 16 ns | 15A | 20V | 3V | 2.5W Ta | 20V | N-Channel | 3100pF @ 10V | 7m Ω @ 15A, 10V | 3V @ 250μA | 15A Ta | 42nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SISC624P06X3MA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 18 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP2N80 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp2n80-datasheets-9877.pdf | 800V | 2.4A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 85W | 1 | FET General Purpose Power | 12 ns | 30ns | 28 ns | 25 ns | 2.4A | 30V | SILICON | SWITCHING | 85W Tc | TO-220AB | 9.6A | 800V | N-Channel | 550pF @ 25V | 6.3 Ω @ 1.2A, 10V | 5V @ 250μA | 2.4A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| FQD9N25TM-F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqu9n25tu-datasheets-4660.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 105ns | 45 ns | 25 ns | 7.4A | 30V | SILICON | DRAIN | SWITCHING | 2.5W Ta 55W Tc | TO-252AB | 29.6A | 0.42Ohm | 165 mJ | 250V | N-Channel | 700pF @ 25V | 420m Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AOH3254 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-261-4, TO-261AA | 18 Weeks | 150V | 4.1W Ta | N-Channel | 675pF @ 75V | 63m Ω @ 5A, 10V | 2.7V @ 250μA | 5A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6405 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | 8-PowerSMD, Flat Leads | 30V | 2.5W Ta 83W Tc | P-Channel | 5500pF @ 15V | 7m Ω @ 20A, 10V | 1.6V @ 250μA | 15A Ta 30A Tc | 105nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF256L | Alpha & Omega Semiconductor Inc. | $3.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aotf256l-datasheets-5959.pdf | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 12A | Single | 150V | 2.1W Ta 33W Tc | N-Channel | 1165pF @ 75V | 85m Ω @ 10A, 10V | 2.8V @ 250μA | 3A Ta 12A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH10H015SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 1.5W Ta 55W Tc | N-Channel | 2343pF @ 50V | 14.5m Ω @ 20A, 10V | 4V @ 250μA | 8.4A Ta 50.5A Tc | 30.1nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4013SPSQ-13 | Diodes Incorporated | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4013spsq13-datasheets-9928.pdf | 8-PowerTDFN | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | 40V | 1.6W Ta | P-Channel | 4004pF @ 20V | 15m Ω @ 10A, 10V | 3V @ 250μA | 11A Ta 61A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1010ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfr1010ztrlpbf-datasheets-9929.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 76ns | 48 ns | 42 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 140W Tc | TO-252AA | 0.0075Ohm | 220 mJ | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 42A, 10V | 4V @ 100μA | 42A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD127N06LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd127n06lgbtma1-datasheets-9809.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 39 Weeks | no | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 136W Tc | TO-252AA | 50A | 200A | 0.0127Ohm | 240 mJ | N-Channel | 2300pF @ 30V | 12.7m Ω @ 50A, 10V | 2V @ 80μA | 50A Tc | 69nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2607ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr2607ztrpbf-datasheets-9951.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110W | 75V | 75V | TO-252AA | 42A | 180A | 0.022Ohm | 96 mJ | N-Channel | 1440pF @ 25V | 22m Ω @ 30A, 10V | 4V @ 50μA | 42A Tc | 51nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPG20N04S409ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipg20n04s409atma1-datasheets-9848.pdf | 8 | 12 Weeks | EAR99 | not_compliant | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 20A | 80A | 0.0086Ohm | 145 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLH6224TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irlh6224trpbf-datasheets-9910.pdf | 8-PowerTDFN | 12 Weeks | No SVHC | 8 | EAR99 | No | 3.6W | 1 | FET General Purpose Power | 9.4 ns | 23ns | 36 ns | 67 ns | 28A | 12V | Single | 800mV | 3.6W Ta 52W Tc | 20V | N-Channel | 3710pF @ 10V | 800 mV | 3m Ω @ 20A, 4.5V | 1.1V @ 50μA | 28A Ta 105A Tc | 86nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FKI07117 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-fki07117-datasheets-9854.pdf | TO-220-3 Full Pack | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 42A | 75V | 40W Tc | N-Channel | 4040pF @ 25V | 9.7m Ω @ 31.2A, 10V | 2.5V @ 1mA | 42A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ20S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $3.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 16ns | 90 ns | 20A | 10V | 40V | 41W Tc | P-Channel | 1850pF @ 10V | 22.2m Ω @ 10A, 10V | 3V @ 1mA | 20A Ta | 37nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4005SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4005spsq13-datasheets-9720.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.6W Ta 150W Tc | 20.9A | 150A | 0.0037Ohm | 132.3 mJ | N-Channel | 3062pF @ 20V | 3.7m Ω @ 50A, 10V | 4V @ 250μA | 20.9A Ta 100A Tc | 49.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMPH6023SK3Q-13 | Diodes Incorporated | $4.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph6023sk3q13-datasheets-9758.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.2W | P-Channel | 2569pF @ 30V | 33m Ω @ 10A, 10V | 3V @ 250μA | 35A Tc | 53.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC146N10LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc146n10ls5atma1-datasheets-9801.pdf | 8-PowerTDFN | 13 Weeks | 100V | 2.5W Ta 52W Tc | N-Channel | 1300pF @ 50V | 14.6m Ω @ 22A, 10V | 2.3V @ 23μA | 44A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4004LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4004lk313-datasheets-9802.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.9W Ta 180W Tc | 200A | 0.005Ohm | 90 mJ | N-Channel | 4450pF @ 25V | 3m Ω @ 50A, 10V | 3V @ 250μA | 100A Tc | 83nC @ 10V | 4.5V 10V | ±20V |
