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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMTH10H010LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 22 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 1.5W 125W Tc | N-Channel | 2592pF @ 50V | 8.6m Ω @ 13A, 10V | 3V @ 250μA | 10.8A Ta 98.4A Tc | 53.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH3004LPSQ-13 | Diodes Incorporated | $1.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth3004lpsq13-datasheets-9789.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 145A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 136W Tc | 22A | 110 mJ | N-Channel | 2370pF @ 15V | 3.8m Ω @ 20A, 10V | 3V @ 250μA | 22A Ta 145A Tc | 43.7nC @ 15V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||
| EKI06075 | Sanken | $2.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-eki06075-datasheets-9791.pdf | TO-220-3 | Lead Free | 12 Weeks | unknown | NOT SPECIFIED | NOT SPECIFIED | 78A | 60V | 116W Tc | N-Channel | 3810pF @ 25V | 6.3m Ω @ 39A, 10V | 2.5V @ 1mA | 78A Tc | 53.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSY200N05TL | ROHM Semiconductor | $3.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsy200n05tl-datasheets-9676.pdf | 3-SMD, Flat Lead | 3 | 20W | TCPT3 | 20A | 45V | 20W Ta | 45V | N-Channel | 20A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ20S04M3L(T6L1,NQ | Toshiba Semiconductor and Storage | $3.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 16ns | 90 ns | 20A | 10V | 40V | 41W Tc | P-Channel | 1850pF @ 10V | 22.2m Ω @ 10A, 10V | 3V @ 1mA | 20A Ta | 37nC @ 10V | 6V 10V | +10V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4005SPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4005spsq13-datasheets-9720.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.6W Ta 150W Tc | 20.9A | 150A | 0.0037Ohm | 132.3 mJ | N-Channel | 3062pF @ 20V | 3.7m Ω @ 50A, 10V | 4V @ 250μA | 20.9A Ta 100A Tc | 49.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMPH6023SK3Q-13 | Diodes Incorporated | $4.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph6023sk3q13-datasheets-9758.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.2W | P-Channel | 2569pF @ 30V | 33m Ω @ 10A, 10V | 3V @ 250μA | 35A Tc | 53.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC146N10LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc146n10ls5atma1-datasheets-9801.pdf | 8-PowerTDFN | 13 Weeks | 100V | 2.5W Ta 52W Tc | N-Channel | 1300pF @ 50V | 14.6m Ω @ 22A, 10V | 2.3V @ 23μA | 44A Tc | 10nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4004LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4004lk313-datasheets-9802.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.9W Ta 180W Tc | 200A | 0.005Ohm | 90 mJ | N-Channel | 4450pF @ 25V | 3m Ω @ 50A, 10V | 3V @ 250μA | 100A Tc | 83nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD60R210PFD7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Surface Mount | -40°C~150°C TJ | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 650V | 64W Tc | N-Channel | 1015pF @ 400V | 210m Ω @ 4.9A, 10V | 4.5V @ 240μA | 16A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EKI10198 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-eki10198-datasheets-9808.pdf | TO-220-3 | Lead Free | 12 Weeks | unknown | NOT SPECIFIED | NOT SPECIFIED | 47A | 100V | 116W Tc | N-Channel | 3990pF @ 25V | 17.8m Ω @ 23.4A, 10V | 2.5V @ 1mA | 47A Tc | 55.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK30S06K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 58W | 1 | DPAK+ | 1.35nF | 10ns | 11 ns | 30A | 20V | 60V | 58W Tc | N-Channel | 1350pF @ 10V | 18Ohm @ 15A, 10V | 3V @ 1mA | 30A Ta | 28nC @ 10V | 18 Ω | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF19N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf19n10-datasheets-9751.pdf | 100V | 19A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 7.5 ns | 150ns | 65 ns | 20 ns | 13.6A | 25V | SILICON | ISOLATED | SWITCHING | 38W Tc | 54.4A | 220 mJ | 100V | N-Channel | 780pF @ 25V | 100m Ω @ 6.8A, 10V | 4V @ 250μA | 13.6A Tc | 25nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||
| NTTFS5C453NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs5c453nltag-datasheets-5397.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 107A | 40V | 3.3W Ta 68W Tc | N-Channel | 2100pF @ 25V | 3m Ω @ 40A, 10V | 2V @ 250μA | 23A Ta 107A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl3103strlpbf-datasheets-9763.pdf | 30V | 64A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 12 Weeks | 12MOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | R-PSSO-G2 | 8.9 ns | 120ns | 9.1 ns | 14 ns | 64A | 16V | SILICON | DRAIN | SWITCHING | 94W Tc | 220A | 30V | N-Channel | 1650pF @ 25V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||
| NVMFS5C645NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c645nlaft3g-datasheets-1920.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 16 hours ago) | yes | not_compliant | e3 | Matte Tin (Sn) | 60V | 3.7W Ta 79W Tc | N-Channel | 2200pF @ 50V | 4m Ω @ 50A, 10V | 2V @ 250μA | 22A Ta 100A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR6215TRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr6215trpbf-datasheets-6749.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 110W Tc | TO-252AA | 13A | 44A | 0.295Ohm | 310 mJ | P-Channel | 860pF @ 25V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AOT8N65 | Alpha & Omega Semiconductor Inc. | $4.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-220-3 | 18 Weeks | 8A | 650V | 208W Tc | N-Channel | 1400pF @ 25V | 1.15 Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4296 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 100V | 3.1W Ta | N-Channel | 3130pF @ 50V | 8.3m Ω @ 13.5A, 10V | 2.3V @ 250μA | 13.5A Ta | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMYS3D5N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys3d5n04ctwg-datasheets-9703.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 68W Tc | N-Channel | 1600pF @ 25V | 3.3m Ω @ 50A, 10V | 3.5V @ 60μA | 24A Ta 102A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI50N06TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqb50n06tm-datasheets-5303.pdf | 60V | 50A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 6 Weeks | 2.084g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 3.75W | 1 | FET General Purpose Power | R-PSIP-T3 | 15 ns | 105ns | 65 ns | 60 ns | 50A | 25V | SILICON | SWITCHING | 3.75W Ta 120W Tc | 200A | 0.022Ohm | 490 mJ | 60V | N-Channel | 1540pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 41nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| IRLR8743TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr8743trpbf-datasheets-6686.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 135W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 17 ns | 160A | SILICON | DRAIN | SWITCHING | 135W Tc | TO-252AA | 640A | 250 mJ | 30V | N-Channel | 4880pF @ 15V | 3.1m Ω @ 25A, 10V | 2.35V @ 100μA | 160A Tc | 59nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RRH075P03TB1 | ROHM Semiconductor | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | 8-SOIC (0.154, 3.90mm Width) | 52 Weeks | 8 | 2W | 7.5A | 30V | 650mW Ta | -30V | P-Channel | 1900pF @ 10V | 21m Ω @ 7.5A, 10V | 2.5V @ 1mA | 7.5A Ta | 21nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD031N03LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd031n03lgatma1-datasheets-9693.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 94W | 1 | PG-TO252-3 | 5.3nF | 9 ns | 6ns | 5 ns | 34 ns | 90A | 20V | 30V | 94W Tc | 3.1mOhm | 30V | N-Channel | 5300pF @ 15V | 3.1mOhm @ 30A, 10V | 2.2V @ 250μA | 90A Tc | 51nC @ 10V | 3.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOTF8N65 | Alpha & Omega Semiconductor Inc. | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 8A | 650V | 50W Tc | N-Channel | 1400pF @ 25V | 1.15 Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C645NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c645nlwfaft3g-datasheets-9732.pdf | 8-PowerTDFN, 5 Leads | 60V | 3.7W Ta 79W Tc | N-Channel | 2200pF @ 50V | 4m Ω @ 50A, 10V | 2V @ 250μA | 22A Ta 100A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD031N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd031n03lgatma1-datasheets-9693.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 94W | 1 | R-PSSO-G2 | 9 ns | 6ns | 5 ns | 34 ns | 90A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 94W Tc | 400A | 0.004Ohm | 60 mJ | N-Channel | 5300pF @ 15V | 3.1m Ω @ 30A, 10V | 2.2V @ 250μA | 90A Tc | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRL520LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irl520lpbf-datasheets-9748.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.54mm | 8.76mm | 4.7mm | 3 | 12 Weeks | 6.000006g | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | 3 | 1 | Single | 1 | FET General Purpose Power | 9.8 ns | 64ns | 27 ns | 21 ns | 9.2A | 10V | SILICON | DRAIN | SWITCHING | 60W Tc | 0.27Ohm | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 5.5A, 5V | 2V @ 250μA | 9.2A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||
| SI7804DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7804dnt1e3-datasheets-3704.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | S-XDSO-C5 | 8 ns | 12ns | 12 ns | 32 ns | 6.5A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.5W Ta | 40A | N-Channel | 18.5m Ω @ 10A, 10V | 1.8V @ 250μA | 6.5A Ta | 13nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| AOTF2610L | Alpha & Omega Semiconductor Inc. | $3.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 35A | Single | 60V | 2.1W Ta 31W Tc | N-Channel | 2007pF @ 30V | 10.7m Ω @ 20A, 10V | 2.5V @ 250μA | 9A Ta 35A Tc | 30nC @ 10V | 4.5V 10V | ±20V |
