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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVMYS010N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys010n04cltwg-datasheets-8313.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.8W Ta 28W Tc | N-Channel | 570pF @ 25V | 10.3m Ω @ 20A, 10V | 2V @ 20μA | 14A Ta 38A Tc | 7.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS014P04M8LTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvtfs014p04m8ltag-datasheets-8364.pdf | 8-PowerWDFN | 18 Weeks | yes | 40V | 3.2W Ta 61W Tc | P-Channel | 1734pF @ 20V | 13.8m Ω @ 15A, 10V | 2.4V @ 420μA | 11.3A Ta 49A Tc | 26.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7318 | Alpha & Omega Semiconductor Inc. | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerWDFN | 18 Weeks | 30V | 4.1W Ta 39W Tc | N-Channel | 2840pF @ 15V | 1.95m Ω @ 20A, 10V | 2.3V @ 250μA | 36.5A Ta 50A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL9P3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl9p3llh6-datasheets-7176.pdf | 8-PowerVDFN | 20 Weeks | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | STL9 | 9A | 30V | 3W Ta | P-Channel | 2615pF @ 25V | 15m Ω @ 4.5A, 10V | 1V @ 250μA | 9A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SISS32DN-T1-GE3 | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss32dnt1ge3-datasheets-7567.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 80V | 5W Ta 65.7W Tc | N-Channel | 1930pF @ 40V | 7.2mOhm @ 10A, 10V | 3.8V @ 250μA | 17.4A Ta 63A Tc | 42nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R600P7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd60r600p7sauma1-datasheets-8153.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 30W Tc | 16A | 0.6Ohm | 17 mJ | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SISA72ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa72adnt1ge3-datasheets-8158.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 40V | 3.7W Ta 52W Tc | N-Channel | 2530pF @ 20V | 3.25mOhm @ 10A, 10V | 2.4V @ 250μA | 25.4A Ta 94A Tc | 50nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M5R0-40HX | Nexperia USA Inc. | $1.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 175°C | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmeg120g10elrz-datasheets-5213.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 40V | 83W | N-Channel | 5m Ω @ 85A, 10V | 85A | 28nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISHA14DN-T1-GE3 | Vishay Siliconix | $0.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisha14dnt1ge3-datasheets-8025.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.57W Ta 26.5W Tc | N-Channel | 1450pF @ 15V | 5.1mOhm @ 10A, 10V | 2.2V @ 250μA | 19.7A Ta 20A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH9310TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfh9310trpbf-datasheets-7784.pdf | 8-PowerVDFN | 6mm | 950μm | 5mm | 3 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | Single | 30 | 3.1W | 1 | Other Transistors | R-PDSO-N3 | 25 ns | 47ns | 70 ns | 65 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.9V | 3.1W Ta | 40A | 0.0046Ohm | -30V | P-Channel | 5250pF @ 15V | -1.9 V | 4.6m Ω @ 21A, 10V | 2.4V @ 100μA | 21A Ta 40A Tc | 58nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||
| TSM080NB03CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm080nb03crrlg-datasheets-8174.pdf | 8-PowerTDFN | 18 Weeks | 8-PDFN (5x6) | 30V | 3.1W Ta 55.6W Tc | N-Channel | 1097pF @ 15V | 8mOhm @ 14A, 10V | 2.5V @ 250μA | 14A Ta 59A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR150DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir150dpt1re3-datasheets-8224.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 45V | 5.2W Ta 65.7W Tc | N-Channel | 4000pF @ 20V | 2.71mOhm @ 15A, 10V | 2.3V @ 250μA | 30.9A Ta 110A Tc | 70nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD19NF06L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 52 Weeks | STD19 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD30NF06LAG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | STD30N | NOT SPECIFIED | 60V | N-Channel | 28A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB36NF06LT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb36nf06lt4-datasheets-8229.pdf | 60V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | No SVHC | 40mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB36N | 4 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 80ns | 13 ns | 19 ns | 30A | 18V | SILICON | DRAIN | SWITCHING | 1V | 70W Tc | 60V | N-Channel | 660pF @ 25V | 40m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 17nC @ 5V | 5V 10V | ±18V | ||||||||||||||||||||
| NVMYS021N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys021n06cltwg-datasheets-8265.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.8W Ta 28W Tc | N-Channel | 410pF @ 25V | 21m Ω @ 10A, 10V | 2V @ 16μA | 9.8A Ta 27A Tc | 5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STL35N75LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl35n75lf3-datasheets-8267.pdf | 8-PowerVDFN | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | compliant | STL35 | 75V | 50W Tc | N-Channel | 800pF @ 50V | 25m Ω @ 4A, 10V | 2.4V @ 250μA | 32A Tc | 7.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLJS7D2P02P8ZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntljs7d2p02p8ztag-datasheets-8218.pdf | 6-PowerWDFN | 12 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 860mW Ta | P-Channel | 2790pF @ 10V | 9m Ω @ 10A, 4.5V | 1.5V @ 250μA | 7.9A Ta | 26.7nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPN70R450P7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn70r450p7satma1-datasheets-8226.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 7.1W Tc | 0.45Ohm | N-Channel | 424pF @ 400V | 450m Ω @ 2.3A, 10V | 3.5V @ 120μA | 10A Tc | 13.1nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||
| STD22NF06AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 8 months ago) | compliant | NOT SPECIFIED | STD22N | NOT SPECIFIED | 60V | N-Channel | 23A | 20nC @ 50V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD80N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std80n6f7-datasheets-8273.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | ACTIVE (Last Updated: 8 months ago) | compliant | 60V | 100W Tc | N-Channel | 1600pF @ 30V | 8m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 25nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7M5R0-40HX | Nexperia USA Inc. | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 175°C | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmeg120g10elrz-datasheets-5213.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 40V | 83W | N-Channel | 5m Ω @ 85A, 10V | 85A | 22nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS50DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss50dnt1ge3-datasheets-8278.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 45V | 5W Ta 65.7W Tc | N-Channel | 4000pF @ 20V | 2.83mOhm @ 15A, 10V | 2.3V @ 250μA | 29.7A Ta 108A Tc | 70nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL3P6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 52 Weeks | STL3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS3L045GNGZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs3l045gngzetb-datasheets-8045.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2W Ta | 4.5A | 18A | 0.092Ohm | 7.7 mJ | N-Channel | 285pF @ 30V | 59m Ω @ 4.5A, 10V | 2.7V @ 50μA | 4.5A Ta | 5.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PSMN012-60MSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn01260msx-datasheets-8060.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 60V | 75W Ta | N-Channel | 1625pF @ 25V | 12m Ω @ 15A, 10V | 4V @ 1mA | 53A Ta | 24.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R2K0PFD7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Surface Mount | -40°C~150°C TJ | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 650V | 20W Tc | N-Channel | 134pF @ 400V | 2 Ω @ 500mA, 10V | 4.5V @ 30μA | 3A Tc | 3.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS024N06CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs024n06ct1g-datasheets-7985.pdf | 8-PowerTDFN, 5 Leads | 14 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.4W Ta 28W Tc | N-Channel | 333pF @ 30V | 22m Ω @ 3A, 10V | 4V @ 20μA | 8A Ta 25A Tc | 5.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS484CENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs484cenwt1ge3-datasheets-8058.pdf | PowerPAK® 1212-8W | PowerPAK® 1212-8W | 40V | 62.5W Tc | N-Channel | 2350pF @ 25V | 9.5mOhm @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9332TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9332trpbf-datasheets-8064.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.5W | 1 | Other Transistors | 15 ns | 47ns | 58 ns | 73 ns | 9.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta | -30V | P-Channel | 1270pF @ 25V | 17.5m Ω @ 9.8A, 10V | 2.4V @ 25μA | 9.8A Ta | 41nC @ 10V | 4.5V 10V | ±20V |
