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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AO3422 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-236-3, SC-59, SOT-23-3 | 1.25mm | Lead Free | 3 | 18 Weeks | 3 | yes | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | 1.25W | 1 | 150°C | 2.3 ns | 16.5 ns | 2.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.3V | 1.25W Ta | 55V | N-Channel | 300pF @ 25V | 160m Ω @ 2.1A, 4.5V | 2V @ 250μA | 2.1A Ta | 3.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| STW40N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw40n95k5-datasheets-6551.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STW40N | NOT SPECIFIED | FET General Purpose Power | 38A | Single | 950V | 450W Tc | N-Channel | 3300pF @ 100V | 130m Ω @ 19A, 10V | 5V @ 100μA | 38A Tc | 93nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP3N150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw3n150-datasheets-1364.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 9Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP3N | 3 | Single | 140W | 1 | FET General Purpose Power | 24 ns | 47ns | 61 ns | 45 ns | 2.5A | 30V | SILICON | SWITCHING | 1500V | 4V | 140W Tc | TO-220AB | 450 mJ | 1.5kV | N-Channel | 939pF @ 25V | 9 Ω @ 1.3A, 10V | 5V @ 250μA | 2.5A Tc | 29.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| DMN2020LSN-7 | Diodes Incorporated | $0.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2020lsn7-datasheets-6598.pdf | TO-236-3, SC-59, SOT-23-3 | 3.1mm | 1.3mm | 1.7mm | Lead Free | 3 | 16 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 610mW | 1 | FET General Purpose Power | Not Qualified | 11.67 ns | 12.49ns | 12.33 ns | 35.89 ns | 6.9A | 12V | SILICON | SWITCHING | 20V | 20V | 1V | 610mW Ta | 0.02Ohm | N-Channel | 1149pF @ 10V | 20m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 6.9A Ta | 11.6nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| AUIRFS4310ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfs4310z-datasheets-7328.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 250W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 60ns | 57 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 560A | 0.006Ohm | 100V | N-Channel | 6860pF @ 50V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB027N10N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipb027n10n5atma1-datasheets-6300.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3.949996g | 3 | yes | EAR99 | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 26 ns | 15ns | 17 ns | 52 ns | 120A | 20V | 100V | SILICON | DRAIN | SWITCHING | 250W Tc | 480A | 0.0027Ohm | 100V | N-Channel | 10300pF @ 50V | 2.7m Ω @ 100A, 10V | 3.8V @ 184μA | 120A Tc | 139nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STW8N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw8n120k5-datasheets-6377.pdf | TO-247-3 | 17 Weeks | STW8N | 1200V | 130W Tc | N-Channel | 505pF @ 100V | 2 Ω @ 2.5A, 10V | 5V @ 100μA | 6A Tc | 13.7nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R060P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r060p7atma1-datasheets-6240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 164W | 1 | 150°C | R-PSSO-G2 | 23 ns | 79 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 164W Tc | 0.06Ohm | 600V | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| STB18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 295mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB18N | 4 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 68A | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| IPDD60R190G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdd60r190g7xtma1-datasheets-6091.pdf | 10-PowerSOP Module | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 76W Tc | N-Channel | 718pF @ 400V | 190m Ω @ 4.2A, 10V | 4V @ 210μA | 13A Tc | 18nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R120P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r120p7atma1-datasheets-6243.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 95W | 1 | 150°C | R-PSSO-G2 | 21 ns | 81 ns | 26A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 95W Tc | 78A | 82 mJ | 600V | N-Channel | 1544pF @ 400V | 120m Ω @ 8.2A, 10V | 4V @ 410μA | 26A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| 2SK3747-MG8 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3747-datasheets-6200.pdf | TO-3P-3 Full Pack | TO-3PML | 1500V | N-Channel | 380pF @ 30V | 13Ohm @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±35V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPB21N50C3ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spb21n50c3atma1-datasheets-6259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | no | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 560V | 500V | 208W Tc | 21A | 63A | 0.19Ohm | 690 mJ | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 21A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| FDS6681Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-fds6681z-datasheets-6291.pdf | -30V | -20A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 4.6MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | 20 ns | 9ns | 380 ns | 660 ns | -20A | 25V | 30V | SILICON | SWITCHING | -1.8V | 2.5W Ta | -30V | P-Channel | 7540pF @ 15V | 1.8 V | 4.6m Ω @ 20A, 10V | 3V @ 250μA | 20A Ta | 260nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||
| IRLS4030TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irls4030trl7pp-datasheets-6230.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 12 Weeks | No SVHC | 7 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 370W | 1 | R-PSSO-G6 | 53 ns | 160ns | 87 ns | 110 ns | 190A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 2.5V | 370W Tc | 0.0039Ohm | 320 mJ | 100V | N-Channel | 11490pF @ 50V | 1 V | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 190A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| 2SK4221 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4222-datasheets-7744.pdf | TO-3P-3, SC-65-3 | TO-3PB | 500V | 2.5W Ta 220W Tc | N-Channel | 2250pF @ 30V | 240mOhm @ 13A, 10V | 26A Ta | 87nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK4065-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk4043ls-datasheets-3453.pdf | TO-220-3, Short Tab | SMP | 75V | 1.65W Ta 90W Tc | N-Channel | 12200pF @ 20V | 6mOhm @ 50A, 10V | 100A Ta | 220nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS23N20DTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb23n20dpbf-datasheets-4027.pdf | 200V | 24A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 14 Weeks | No SVHC | 100mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 14 ns | 32ns | 16 ns | 26 ns | 24A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 3.8W Ta 170W Tc | 96A | 250 mJ | 200V | N-Channel | 1960pF @ 25V | 5.5 V | 100m Ω @ 14A, 10V | 5.5V @ 250μA | 24A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IPL60R075CFD7AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipl60r075cfd7auma1-datasheets-6265.pdf | 4-PowerTSFN | 4 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 600V | 189W Tc | 33A | 129A | 0.075Ohm | 151 mJ | N-Channel | 2721pF @ 400V | 75m Ω @ 15.1A, 10V | 4.5V @ 760μA | 33A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTP8G206NG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntms4n01r2-datasheets-5186.pdf | TO-220-3 | TO-220-3 | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180mOhm @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 8V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC007N04LS6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc007n04ls6atma1-datasheets-6130.pdf | 8-PowerTDFN | 26 Weeks | 40V | 188W | N-Channel | 8400pF @ 20V | 0.7m Ω @ 50A, 10V | 2.3V @ 250μA | 100A | 94nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC105N10LSFGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-bsc105n10lsfgatma1-datasheets-6135.pdf | 8-PowerTDFN | Contains Lead | 5 | 16 Weeks | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 156W | 1 | Not Qualified | R-PDSO-F5 | 26ns | 11.4A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 156W Tc | 360A | 377 mJ | N-Channel | 3900pF @ 50V | 10.5m Ω @ 50A, 10V | 2.4V @ 110μA | 11.4A Ta 90A Tc | 53nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRFS7734TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfs7734trlpbf-datasheets-6080.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3.949996g | 3 | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 20 ns | 123ns | 100 ns | 124 ns | 183A | 20V | SILICON | DRAIN | SWITCHING | 290W Tc | 650A | 670 mJ | 75V | N-Channel | 10150pF @ 25V | 3.5m Ω @ 100A, 10V | 3.7V @ 250μA | 183A Tc | 270nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| 2SK3747 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk3747-datasheets-6200.pdf | TO-3P-3 Full Pack | TO-3PML | 1500V | 3W Ta 50W Tc | N-Channel | 380pF @ 30V | 13Ohm @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±35V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLS3813TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-irls3813trlpbf-datasheets-6057.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | 3.949996g | 3 | EAR99 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 195W | 32 ns | 202ns | 102 ns | 33 ns | 160A | 20V | 30V | 195W Tc | N-Channel | 8020pF @ 25V | 1.95m Ω @ 148A, 10V | 2.35V @ 150μA | 160A Tc | 83nC @ 4.5V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB320N20N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp320n20n3gxksa1-datasheets-4150.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 13 Weeks | 3 | no | EAR99 | No | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | 136W | 1 | R-PSSO-G2 | 11 ns | 9ns | 4 ns | 21 ns | 34A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 136W Tc | N-Channel | 2350pF @ 100V | 32m Ω @ 34A, 10V | 4V @ 90μA | 34A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDI025N06 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fdmc8676-datasheets-6694.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | yes | e3 | MATTE TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 395W Tc | 120A | 1060A | 0.0025Ohm | 2531 mJ | N-Channel | 14.885pF @ 25V | 2.5m Ω @ 75A, 10V | 4.5V @ 250μA | 265A Tc | 226nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSC042NE7NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc042ne7ns3gatma1-datasheets-5769.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 14 ns | 17ns | 9 ns | 34 ns | 19A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 125W Tc | 400A | 0.0042Ohm | 220 mJ | N-Channel | 4800pF @ 37.5V | 4.2m Ω @ 50A, 10V | 3.8V @ 91μA | 19A Ta 100A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPB80N06S2L06ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb80n06s2l06atma2-datasheets-5969.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10mm | 4.4mm | 9.25mm | Contains Lead | 2 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 250W | 1 | R-PSSO-G2 | 11 ns | 21ns | 20 ns | 60 ns | 80A | 20V | 55V | SILICON | DRAIN | 250W Tc | 0.0084Ohm | 55V | N-Channel | 3800pF @ 25V | 6m Ω @ 69A, 10V | 2V @ 180μA | 80A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| AUIRF3205ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-auirf3205z-datasheets-7795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 95ns | 67 ns | 45 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 170W Tc | 440A | 0.0065Ohm | 250 mJ | 55V | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V |
