Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIS413DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis413dnt1ge3-datasheets-6716.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | No SVHC | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | 150°C | S-PDSO-C5 | 11 ns | 11ns | 8 ns | 45 ns | -14.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | -2.5V | 3.7W Ta 52W Tc | 70A | 0.0094Ohm | 20 mJ | -30V | P-Channel | 4280pF @ 15V | 9.4m Ω @ 15A, 10V | 2.5V @ 250μA | 18A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIS434DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sis434dnt1ge3-datasheets-7064.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 7.6mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 250 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 30 ns | 25ns | 20 ns | 40 ns | 35A | 20V | SILICON | DRAIN | 2.2V | 3.8W Ta 52W Tc | 60A | 45 mJ | 40V | N-Channel | 1530pF @ 20V | 7.6m Ω @ 16.2A, 10V | 2.2V @ 250μA | 35A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SQJ457EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj457ept1ge3-datasheets-7053.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | 1 | NOT SPECIFIED | 68W | 175°C | 15 ns | 40 ns | -36A | 20V | 60V | 68W Tc | -60V | P-Channel | 3400pF @ 25V | 25m Ω @ 10A, 10V | 2.5V @ 250μA | 36A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN040-100MSEX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn040100msex-datasheets-7171.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | Tin | not_compliant | e3 | YES | GULL WING | 260 | 8 | 1 | Single | 30 | 91W | 1 | R-PSSO-G4 | 8.3 ns | 14.1ns | 13 ns | 18.7 ns | 30A | 20V | 100V | SILICON | DRAIN | SWITCHING | 91W Tc | 0.0366Ohm | 54 mJ | 100V | N-Channel | 1470pF @ 50V | 36.6m Ω @ 10A, 10V | 4V @ 1mA | 30A Tj | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSZ034N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz034n04lsatma1-datasheets-7180.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 4ns | 40A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 52W Tc | 19A | 160A | 0.0046Ohm | 70 mJ | N-Channel | 1800pF @ 20V | 3.4m Ω @ 20A, 10V | 2V @ 250μA | 19A Ta 40A Tc | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB180N10S402ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb180n10s402atma1-datasheets-6350.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G6 | 15 ns | 9ns | 40 ns | 30 ns | 180A | 20V | 100V | SILICON | DRAIN | 300W Tc | 720A | 0.0025Ohm | N-Channel | 14600pF @ 25V | 2.5m Ω @ 100A, 10V | 3.5V @ 275μA | 180A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd25n06s4l30atma2-datasheets-6894.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 25A | 60V | 29W Tc | N-Channel | 1220pF @ 25V | 30m Ω @ 25A, 10V | 2.2V @ 8μA | 25A Tc | 16.3nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4401DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4401ddyt1ge3-datasheets-6917.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 15mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 6.3W | 1 | Other Transistors | 150°C | 13 ns | 45 ns | -16.1A | 20V | SILICON | SWITCHING | 40V | -2.5V | 2.5W Ta 6.3W Tc | -40V | P-Channel | 3007pF @ 20V | 15m Ω @ 10.2A, 10V | 2.5V @ 250μA | 16.1A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| TPN2R304PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8 | 8-TSON Advance (3.3x3.3) | 3.6nF | 80A | 40V | 630mW Ta 104W Tc | N-Channel | 3600pF @ 20V | 2.3mOhm @ 40A, 10V | 2.4V @ 0.3mA | 80A Tc | 41nC @ 10V | 2.3 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ065N03LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz065n03lsatma1-datasheets-6720.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | R-PDSO-N3 | 3.4ns | 12A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 2.1W Ta 26W Tc | N-Channel | 670pF @ 15V | 6.5m Ω @ 20A, 10V | 2V @ 250μA | 12A Ta 40A Tc | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI3443DV | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-si3443dv-datasheets-6660.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 6 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | Other Transistors | 11 ns | 19ns | 19 ns | 26 ns | -4A | 8V | SILICON | SWITCHING | 20V | -700mV | 1.6W Ta | 4A | -20V | P-Channel | 640pF @ 10V | 65m Ω @ 4A, 4.5V | 1.5V @ 250μA | 4A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| AON7407 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerVDFN | 18 Weeks | 8 | No | 29W | 1 | 40A | 8V | 20V | 3.1W Ta 29W Tc | P-Channel | 4195pF @ 10V | 9.5m Ω @ 14A, 4.5V | 900mV @ 250μA | 14.5A Ta 40A Tc | 53nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2309ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2309est1ge3-datasheets-6748.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | TO-236 (SOT-23) | 60V | 2W Tc | 125mOhm | P-Channel | 265pF @ 25V | 336mOhm @ 3.8A, 10V | 2.5V @ 250μA | 1.7A Tc | 8.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4NC50CP ROG | Taiwan Semiconductor Corporation | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nc50cprog-datasheets-6776.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 83W Tc | 4A | 16A | 78.4 mJ | N-Channel | 453pF @ 50V | 2.7 Ω @ 1.7A, 10V | 3V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN3R704PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 8 | 80A | 40V | 630mW Ta 86W Tc | N-Channel | 2500pF @ 20V | 3.7m Ω @ 40A, 10V | 2.4V @ 0.2mA | 80A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2312CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si2312cdst1ge3-datasheets-6616.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 31.8MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Powers | 150°C | 8 ns | 17ns | 8 ns | 31 ns | 6A | 8V | SILICON | SWITCHING | 1V | 1.25W Ta 2.1W Tc | 6A | 20V | N-Channel | 865pF @ 10V | 31.8m Ω @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 18nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| STN4NF20L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stn4nf20l-datasheets-6779.pdf | TO-261-4, TO-261AA | 1.9mm | Lead Free | 4 | 12 Weeks | No SVHC | 1.5Ohm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STN4N | 4 | 1 | Single | 30 | 3.3W | 1 | FET General Purpose Powers | 150°C | 2ns | 10.4 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3.3W Tc | 1A | 4A | 200V | N-Channel | 150pF @ 25V | 1.5 Ω @ 500mA, 10V | 3V @ 250μA | 1A Tc | 0.9nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| DMP6110SVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp6110svt7-datasheets-6802.pdf | SOT-23-6 Thin, TSOT-23-6 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 7.3A | 60V | 1.2W Ta | P-Channel | 969pF @ 30V | 105m Ω @ 4.5A, 10V | 3V @ 250μA | 7.3A Tc | 17.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLML9301TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irlml9301trpbf-datasheets-6559.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 3 | 12 Weeks | No SVHC | 64MOhm | 3 | EAR99 | No | IRLML9301TRPBF | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 1.3W | 1 | Other Transistors | 150°C | 9.6 ns | 19ns | 15 ns | 16 ns | -3.6A | 20V | SILICON | SWITCHING | 30V | -2.4V | 1.3W Ta | 21 ns | -30V | P-Channel | 388pF @ 25V | -1.3 V | 64m Ω @ 3.6A, 10V | 2.4V @ 10μA | 3.6A Ta | 4.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIS427EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sis427ednt1ge3-datasheets-6829.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 45 ns | 40ns | 12 ns | 28 ns | -50A | 25V | SILICON | DRAIN | SWITCHING | 30V | 3.7W Ta 52W Tc | -30V | P-Channel | 1930pF @ 15V | 10.6m Ω @ 11A, 10V | 2.5V @ 250μA | 50A Tc | 66nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| BSC13DN30NSFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc13dn30nsfdatma1-datasheets-6195.pdf | 8-PowerTDFN | 5 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 150W Tc | 16A | 64A | 0.13Ohm | 56 mJ | N-Channel | 2450pF @ 150V | 130m Ω @ 16A, 10V | 4V @ 90μA | 16A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI2301CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2301cdst1ge3-datasheets-6412.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 14 Weeks | 1.437803g | No SVHC | 112mOhm | 3 | Tin | No | 1 | Single | 1.6W | 1 | 150°C | SOT-23-3 (TO-236) | 405pF | 11 ns | 35ns | 35 ns | 30 ns | -3.1A | 8V | 20V | -1V | 860mW Ta 1.6W Tc | 90mOhm | -20V | P-Channel | 405pF @ 10V | -400 mV | 112mOhm @ 2.8A, 4.5V | 1V @ 250μA | 3.1A Tc | 10nC @ 4.5V | 112 mΩ | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SI8800EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8800edbt2e1-datasheets-6624.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 30 Weeks | 80mOhm | 4 | yes | EAR99 | No | e3 | MATTE TIN | BOTTOM | BALL | 260 | 4 | 2 | Dual | 30 | 900mW | 1 | FET General Purpose Power | 350 ns | 2.8A | 8V | SILICON | SWITCHING | 500mW Ta | 2A | 20V | N-Channel | 80m Ω @ 1A, 4.5V | 1V @ 250μA | 8.3nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| DMP1009UFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmp1009ufdf7-datasheets-6620.pdf | 6-UDFN Exposed Pad | 6 | 17 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | 260 | 30 | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 2W Ta | 11A | 0.014Ohm | P-Channel | 1860pF @ 10V | 11m Ω @ 5A, 4.5V | 1V @ 250μA | 15A Ta | 44nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STW8N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw8n120k5-datasheets-6377.pdf | TO-247-3 | 17 Weeks | STW8N | 1200V | 130W Tc | N-Channel | 505pF @ 100V | 2 Ω @ 2.5A, 10V | 5V @ 100μA | 6A Tc | 13.7nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R060P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipb60r060p7atma1-datasheets-6240.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.7mm | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 164W | 1 | 150°C | R-PSSO-G2 | 23 ns | 79 ns | 48A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 164W Tc | 0.06Ohm | 600V | N-Channel | 2895pF @ 400V | 60m Ω @ 15.9A, 10V | 4V @ 800μA | 48A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STB18NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf18nm80-datasheets-4627.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 295mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB18N | 4 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 28ns | 50 ns | 96 ns | 17A | 30V | SILICON | SWITCHING | 4V | 190W Tc | 68A | 600 mJ | 800V | N-Channel | 2070pF @ 50V | 295m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||
| STD105N10F7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std105n10f7ag-datasheets-6418.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD10 | NOT SPECIFIED | FET General Purpose Power | 80A | Single | 100V | 120W Tc | N-Channel | 4369pF @ 50V | 8m Ω @ 40A, 10V | 4.5V @ 250μA | 80A Tc | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB43N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb43n65m5-datasheets-6471.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4.83mm | Lead Free | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | D2PAK-0079457-A2 | SINGLE | GULL WING | NOT SPECIFIED | STB43N | 1 | NOT SPECIFIED | 250W | 1 | 150°C | R-PSSO-G2 | 73 ns | 12 ns | 42A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 0.063Ohm | 650 mJ | 650V | N-Channel | 4400pF @ 100V | 63m Ω @ 21A, 10V | 5V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STD95N2LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std95n2lh5-datasheets-6479.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 4.5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD95 | 3 | Single | 30 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 38ns | 7 ns | 22 ns | 80A | 22V | 25V | SILICON | DRAIN | SWITCHING | 70W Tc | 25V | N-Channel | 1817pF @ 25V | 1 V | 4.5m Ω @ 40A, 10V | 1V @ 250μA | 80A Tc | 13.4nC @ 5V | 5V 10V | ±22V |
