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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9Y12-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y12100e115-datasheets-7550.pdf | SC-100, SOT-669 | Brass | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 1 | 22 ns | 39ns | 74 ns | 117 ns | 85A | 15V | 100V | DRAIN | SWITCHING | 28 AWG | 22 AWG | 238W Tc | MO-235 | Lead, Tin | 339A | N-Channel | 7973pF @ 25V | 12m Ω @ 25A, 5V | 2.1V @ 1mA | 85A Tc | 64nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AON7280 | Alpha & Omega Semiconductor Inc. | $0.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon7280-datasheets-5585.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | EAR99 | No | DUAL | FLAT | 83W | 1 | FET General Purpose Power | S-PDSO-F5 | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 6.3W Ta 83W Tc | N-Channel | 1871pF @ 40V | 8.5m Ω @ 20A, 10V | 3.4V @ 250μA | 20A Ta 50A Tc | 38nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7843TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlr7843trpbf-datasheets-7587.pdf | 30V | 161A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 3.3MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 42ns | 19 ns | 34 ns | 161A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 140W Tc | TO-252AA | 59 ns | 620A | 30V | N-Channel | 4380pF @ 15V | 2.3 V | 3.3m Ω @ 15A, 10V | 2.3V @ 250μA | 161A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SQJ479EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj479ept1ge3-datasheets-7523.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 68W | 1 | 175°C | R-PSSO-G4 | 15 ns | 50 ns | -32A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 68W Tc | 0.033Ohm | 80 mJ | -80V | P-Channel | 4500pF @ 25V | 33m Ω @ 10A, 10V | 2.5V @ 250μA | 32A Tc | 150nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS862DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis862dnt1ge3-datasheets-7463.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 14 Weeks | Unknown | 8 | No | 1 | Single | 52W | 150°C | PowerPAK® 1212-8 | 1.32nF | 23 ns | 5ns | 5 ns | 15 ns | 40A | 20V | 60V | 2.6V | 3.7W Ta 52W Tc | 7mOhm | 60V | N-Channel | 1320pF @ 30V | 8.5mOhm @ 20A, 10V | 2.6V @ 250μA | 40A Tc | 32nC @ 10V | 8.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9393TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9393trpbf-datasheets-6668.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 16 ns | 44ns | 49 ns | 55 ns | 9.2A | 25V | SILICON | SWITCHING | 30V | 2.5W Ta | 75A | -30V | P-Channel | 1110pF @ 25V | 13.3m Ω @ 9.2A, 20V | 2.4V @ 25μA | 9.2A Ta | 38nC @ 10V | 10V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ459EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqj459ept1ge3-datasheets-7386.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 83W | 1 | 175°C | R-PSSO-G4 | 12 ns | 88 ns | -52A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 83W Tc | 200A | 80 mJ | -60V | P-Channel | 4586pF @ 30V | 18m Ω @ 3.5A, 10V | 2.5V @ 250μA | 52A Tc | 108nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5305TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr5305trpbf-datasheets-3036.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 31A | 110A | 0.065Ohm | 280 mJ | P-Channel | 1200pF @ 25V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC070N10NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc070n10ns5atma1-datasheets-7747.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 13 ns | 5ns | 6 ns | 24 ns | 14A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2.5W Ta 83W Tc | 320A | 0.007Ohm | 55 mJ | 100V | N-Channel | 2700pF @ 50V | 7m Ω @ 40A, 10V | 3.8V @ 50μA | 80A Tc | 38nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7424TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7424trpbf-datasheets-7619.pdf | -30V | -11A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 4.05mm | Lead Free | 12 Weeks | No SVHC | 13.5MOhm | 8 | EAR99 | Tin | No | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | -1.2V | 15 ns | 23ns | 76 ns | 150 ns | -11A | 20V | -30V | SILICON | 30V | 6.3 mm | -2.5V | 2.5W Ta | 60 ns | -30V | P-Channel | 4030pF @ 25V | -2.5 V | 13.5m Ω @ 11A, 10V | 2.5V @ 250μA | 11A Ta | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF7468TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7468trpbf-datasheets-7427.pdf | 40V | 9.4A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 12 Weeks | 15.5MOhm | 8 | AVALANCHE RATED | No | DUAL | GULL WING | 2.5W | 1 | 7.6 ns | 2.3ns | 3.8 ns | 20 ns | 9.4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | 75A | 40V | N-Channel | 2460pF @ 20V | 15.5m Ω @ 9.4A, 10V | 2V @ 250μA | 9.4A Ta | 34nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ40N04S5L7R4ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipz40n04s5l7r4atma1-datasheets-7068.pdf | 8-PowerVDFN | 1.15mm | Contains Lead | 3 | 16 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 34W | 1 | 175°C | R-PDSO-N3 | 2 ns | 6 ns | 40A | 16V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 34W Tc | 24 mJ | 40V | N-Channel | 920pF @ 25V | 7.4m Ω @ 20A, 10V | 2V @ 10μA | 40A Tc | 17nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIR426DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir426dpt1ge3-datasheets-7218.pdf | PowerPAK® SO-8 | 1.12mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 12.5MOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 41.7W | 1 | FET General Purpose Power | 150°C | R-XDSO-C5 | 9 ns | 15ns | 10 ns | 18 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 4.8W Ta 41.7W Tc | 70A | 20 mJ | 40V | N-Channel | 1160pF @ 20V | 2.5 V | 10.5m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSZ040N04LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1998 | /files/infineontechnologies-bsz040n04lsgatma1-datasheets-7223.pdf | 8-PowerTDFN | Contains Lead | 18 Weeks | 8 | Tin | No | Halogen Free | 69W | PG-TSDSON-8 | 5.1nF | 8.5 ns | 4.8ns | 5.4 ns | 33 ns | 40A | 20V | 40V | 40V | 2.1W Ta 69W Tc | 3.3mOhm | N-Channel | 5100pF @ 20V | 4mOhm @ 20A, 10V | 2V @ 36μA | 18A Ta 40A Tc | 64nC @ 10V | 4 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC265N10LSFGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc265n10lsfgatma1-datasheets-7250.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | No SVHC | 8 | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 78W | 1 | Not Qualified | R-PDSO-F5 | 24ns | 40A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.85V | 78W Tc | 6.5A | 0.0265Ohm | N-Channel | 1600pF @ 50V | 26.5m Ω @ 20A, 10V | 2.4V @ 43μA | 6.5A Ta 40A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLR2905ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irlr2905ztrlpbf-datasheets-0888.pdf | 55V | 60A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 13.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 130ns | 33 ns | 24 ns | 42mA | 16V | 55V | SILICON | DRAIN | SWITCHING | 3V | 110W Tc | TO-252AA | 33 ns | 42A | 240A | 85 mJ | 55V | N-Channel | 1570pF @ 25V | 3 V | 13.5m Ω @ 36A, 10V | 3V @ 250μA | 42A Tc | 35nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| FDD6N50TM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdu6n50tu-datasheets-1424.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 4 Weeks | 260.37mg | No SVHC | 900mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | No | FDD6N50 | Single | 89W | 1 | FET General Purpose Power | 6 ns | 55ns | 35 ns | 25 ns | 6A | 30V | 5V | 89W Tc | 6A | 500V | N-Channel | 9400pF @ 25V | 900m Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120NTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr9120ntrpbf-datasheets-6833.pdf | -100V | -6.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 480mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 40W | 1 | Other Transistors | R-PSSO-G2 | 14 ns | 47ns | 31 ns | 28 ns | -6.6A | 20V | 100V | SILICON | DRAIN | SWITCHING | -4V | 40W Tc | TO-252AA | 150 ns | 26A | -100V | P-Channel | 350pF @ 25V | -4 V | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 6.6A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI2301CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2301cdst1ge3-datasheets-6412.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 860mW | 1 | Other Transistors | 150°C | 11 ns | 35ns | 35 ns | 30 ns | -2.3A | 8V | SILICON | SWITCHING | 20V | -1V | 860mW Ta 1.6W Tc | -20V | P-Channel | 405pF @ 10V | 112m Ω @ 2.8A, 4.5V | 1V @ 250μA | 3.1A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| IRF7406TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7406trpbf-datasheets-7156.pdf | -30V | -5.8A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 45mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | 150°C | 16 ns | 33ns | 47 ns | 45 ns | -5.8A | 20V | -30V | SILICON | SWITCHING | 30V | 6.3 mm | -1V | 2.5W Ta | 63 ns | 23A | -30V | P-Channel | 1100pF @ 25V | -1 V | 45m Ω @ 2.8A, 10V | 1V @ 250μA | 5.8A Ta | 59nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRFR2405TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfu2405pbf-datasheets-7533.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 30A | 220A | 0.016Ohm | 130 mJ | N-Channel | 2430pF @ 25V | 16m Ω @ 34A, 10V | 4V @ 250μA | 56A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ42DN25NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz42dn25ns3gatma1-datasheets-7371.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | No SVHC | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | 8 | 1 | Not Qualified | S-PDSO-N5 | 3 ns | 2ns | 8 ns | 5A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 33.8W Tc | 5A | 20A | 0.425Ohm | 40 mJ | N-Channel | 430pF @ 100V | 425m Ω @ 2.5A, 10V | 4V @ 13μA | 5A Tc | 5.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7386DP-T1-GE3 | Vishay Siliconix | $4.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7386dpt1ge3-datasheets-7400.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 14 Weeks | 506.605978mg | Unknown | 7mOhm | 8 | No | 1 | Single | 1.8W | 1 | PowerPAK® SO-8 | 12 ns | 9ns | 9 ns | 35 ns | 19A | 20V | 30V | 2.5V | 1.8W Ta | 7mOhm | 30V | N-Channel | 7mOhm @ 19A, 10V | 2.5V @ 250μA | 12A Ta | 18nC @ 4.5V | 7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR5410TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-irfu5410pbf-datasheets-2314.pdf | -100V | -13A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.52mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 205mOhm | 3 | EAR99 | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | 1 | Single | 30 | 66W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 15 ns | 58ns | 46 ns | 45 ns | -13A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | -4V | 66W Tc | TO-252AA | 190 ns | 52A | -100V | P-Channel | 760pF @ 25V | -4 V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PSMN040-100MSEX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn040100msex-datasheets-7171.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | Tin | not_compliant | e3 | YES | GULL WING | 260 | 8 | 1 | Single | 30 | 91W | 1 | R-PSSO-G4 | 8.3 ns | 14.1ns | 13 ns | 18.7 ns | 30A | 20V | 100V | SILICON | DRAIN | SWITCHING | 91W Tc | 0.0366Ohm | 54 mJ | 100V | N-Channel | 1470pF @ 50V | 36.6m Ω @ 10A, 10V | 4V @ 1mA | 30A Tj | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ034N04LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz034n04lsatma1-datasheets-7180.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 4ns | 40A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 52W Tc | 19A | 160A | 0.0046Ohm | 70 mJ | N-Channel | 1800pF @ 20V | 3.4m Ω @ 20A, 10V | 2V @ 250μA | 19A Ta 40A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB180N10S402ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb180n10s402atma1-datasheets-6350.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 6 | 14 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 300W | 1 | R-PSSO-G6 | 15 ns | 9ns | 40 ns | 30 ns | 180A | 20V | 100V | SILICON | DRAIN | 300W Tc | 720A | 0.0025Ohm | N-Channel | 14600pF @ 25V | 2.5m Ω @ 100A, 10V | 3.5V @ 275μA | 180A Tc | 200nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd25n06s4l30atma2-datasheets-6894.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 25A | 60V | 29W Tc | N-Channel | 1220pF @ 25V | 30m Ω @ 25A, 10V | 2.2V @ 8μA | 25A Tc | 16.3nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4401DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4401ddyt1ge3-datasheets-6917.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 15mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 6.3W | 1 | Other Transistors | 150°C | 13 ns | 45 ns | -16.1A | 20V | SILICON | SWITCHING | 40V | -2.5V | 2.5W Ta 6.3W Tc | -40V | P-Channel | 3007pF @ 20V | 15m Ω @ 10.2A, 10V | 2.5V @ 250μA | 16.1A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPN2R304PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 8-PowerVDFN | 12 Weeks | 8 | 8-TSON Advance (3.3x3.3) | 3.6nF | 80A | 40V | 630mW Ta 104W Tc | N-Channel | 3600pF @ 20V | 2.3mOhm @ 40A, 10V | 2.4V @ 0.3mA | 80A Tc | 41nC @ 10V | 2.3 mΩ | 4.5V 10V | ±20V |
