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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Breakdown Voltage | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD80R4K5P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd80r4k5p7atma1-datasheets-8162.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 1.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 13W Tc | TO-252AA | 2.6A | 1 mJ | N-Channel | 80pF @ 500V | 4.5 Ω @ 400mA, 10V | 3.5V @ 200μA | 1.5A Tc | 4nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STL8N6F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl8n6f7-datasheets-8038.pdf | 8-PowerVDFN | 900μm | 22 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | PowerFLATTM-8465286 | NOT SPECIFIED | STL8 | 1 | NOT SPECIFIED | 60W | 150°C | 7.85 ns | 12.1 ns | 36A | 20V | 3W Ta 60W Tc | 60V | N-Channel | 450pF @ 25V | 25m Ω @ 4A, 10V | 4V @ 250μA | 36A Tc | 8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS10ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss10adnt1ge3-datasheets-7983.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 40V | 4.8W Ta 56.8W Tc | N-Channel | 3030pF @ 20V | 2.65mOhm @ 15A, 10V | 2.4V @ 250μA | 31.7A Ta 109A Tc | 61nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL3P6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 52 Weeks | STL3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS3L045GNGZETB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs3l045gngzetb-datasheets-8045.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2W Ta | 4.5A | 18A | 0.092Ohm | 7.7 mJ | N-Channel | 285pF @ 30V | 59m Ω @ 4.5A, 10V | 2.7V @ 50μA | 4.5A Ta | 5.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN012-60MSX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn01260msx-datasheets-8060.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 60V | 75W Ta | N-Channel | 1625pF @ 25V | 12m Ω @ 15A, 10V | 4V @ 1mA | 53A Ta | 24.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R2K0PFD7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Surface Mount | -40°C~150°C TJ | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 650V | 20W Tc | N-Channel | 134pF @ 400V | 2 Ω @ 500mA, 10V | 4.5V @ 30μA | 3A Tc | 3.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS024N06CT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs024n06ct1g-datasheets-7985.pdf | 8-PowerTDFN, 5 Leads | 14 Weeks | yes | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.4W Ta 28W Tc | N-Channel | 333pF @ 30V | 22m Ω @ 3A, 10V | 4V @ 20μA | 8A Ta 25A Tc | 5.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS484CENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs484cenwt1ge3-datasheets-8058.pdf | PowerPAK® 1212-8W | PowerPAK® 1212-8W | 40V | 62.5W Tc | N-Channel | 2350pF @ 25V | 9.5mOhm @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9332TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf9332trpbf-datasheets-8064.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.5W | 1 | Other Transistors | 15 ns | 47ns | 58 ns | 73 ns | 9.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5W Ta | -30V | P-Channel | 1270pF @ 25V | 17.5m Ω @ 9.8A, 10V | 2.4V @ 25μA | 9.8A Ta | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R1K5PFD7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Surface Mount | -40°C~150°C TJ | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 650V | 22W Tc | N-Channel | 169pF @ 400V | 1.5 Ω @ 700mA, 10V | 4.5V @ 40μA | 3.6A Tc | 4.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS139H6906XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss139h6327xtsa1-datasheets-6409.pdf | TO-261-4, TO-261AA | 3 | 10 Weeks | EAR99 | Tin | DUAL | GULL WING | 1 | R-PDSO-G3 | 5.4ns | 100mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 250V | 250V | 360mW Ta | 0.1A | 30Ohm | 3.3 pF | N-Channel | 76pF @ 25V | 14 Ω @ 100mA, 10V | 1V @ 56μA | 100mA Ta | 3.5nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN60R2K0PFD7SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™PFD7 | Surface Mount | -40°C~150°C TJ | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-261-3 | 18 Weeks | 650V | 6W Tc | N-Channel | 134pF @ 400V | 2 Ω @ 500mA, 10V | 4.5V @ 30μA | 3A Tc | 3.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCAC53N06Y-TP | Micro Commercial Co | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcac53n06ytp-datasheets-8010.pdf | 8-PowerVDFN | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 70W Tc | N-Channel | 1988pF @ 30V | 8.2m Ω @ 20A, 10V | 2.5V @ 250μA | 53A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL60P4LLF6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl60p4llf6-datasheets-7509.pdf | 8-PowerVDFN | 6.35mm | 950μm | 5.4mm | 5 | 20 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL60 | Single | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-F5 | 49.4 ns | 170 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 100W Tc | 240A | 0.019Ohm | P-Channel | 3525pF @ 25V | 14m Ω @ 6.5A, 10V | 1V @ 250μA (Min) | 60A Tc | 34nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5300TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfh5300trpbf-datasheets-7606.pdf | 8-PowerVDFN | 6mm | 850μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 1.4MOhm | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 26 ns | 30ns | 13 ns | 31 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 3.6W Ta 250W Tc | 40A | 400A | 420 mJ | 30V | N-Channel | 7200pF @ 15V | 1.4m Ω @ 50A, 10V | 2.35V @ 150μA | 40A Ta 100A Tc | 120nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPH2R608NH,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 150A | 75V | 142W Tc | N-Channel | 6000pF @ 37.5V | 2.6m Ω @ 50A, 10V | 4V @ 1mA | 150A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ431AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj431aept1ge3-datasheets-7828.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® SO-8 | 200V | 68W Tc | P-Channel | 3700pF @ 25V | 305mOhm @ 3.8A, 10V | 3.5V @ 250μA | 9.4A Tc | 85nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ018NE2LSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz018ne2lsiatma1-datasheets-7830.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | S-PDSO-N3 | 5.2 ns | 4.8ns | 3.6 ns | 25 ns | 22A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | 0.0025Ohm | N-Channel | 2500pF @ 12V | 1.8m Ω @ 20A, 10V | 2V @ 250μA | 22A Ta 40A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| MCU12P06-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcu12p06tp-datasheets-7838.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 60V | 40W | P-Channel | 650pF @ 15V | 80m Ω @ 3.1A, 10V | 3V @ 250μA | 12A | 12nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86367-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdd86367f085-datasheets-7872.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.517mm | 47 Weeks | 260.37mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | 1 | Single | NOT SPECIFIED | 227W | 175°C | 20 ns | 36 ns | 100A | 20V | 227W Tj | 80V | N-Channel | 4840pF @ 40V | 4.2m Ω @ 80A, 10V | 4V @ 250μA | 100A Tc | 88nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7455TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7455trpbf-datasheets-7452.pdf | 30V | 15A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 7.5mOhm | 8 | EAR99 | AVALANCHE RATED | No | DUAL | GULL WING | 1 | Single | 2.5W | 1 | 150°C | 17 ns | 18ns | 44 ns | 51 ns | 15A | 12V | 30V | SILICON | SWITCHING | 30V | 2V | 2.5W Ta | 96 ns | 200 mJ | 30V | N-Channel | 3480pF @ 25V | 2 V | 7.5m Ω @ 15A, 10V | 2V @ 250μA | 15A Ta | 56nC @ 5V | 2.8V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI4154DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4154dyt1ge3-datasheets-7842.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 3.3MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | FET General Purpose Power | 25 ns | 70ns | 35 ns | 35 ns | 36A | 20V | SILICON | SWITCHING | 40V | 40V | 2.5V | 3.5W Ta 7.8W Tc | 24A | N-Channel | 4230pF @ 20V | 3.3m Ω @ 15A, 10V | 2.5V @ 250μA | 36A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDMC8462 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8462-datasheets-7913.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | Lead Free | 5 | 43 Weeks | 32.13mg | No SVHC | 5.8MOhm | 8 | ACTIVE (Last Updated: 11 hours ago) | yes | EAR99 | Gold | No | e4 | Nickel/Palladium (Ni/Pd) | DUAL | Single | 2W | 1 | FET General Purpose Power | S-PDSO-N5 | 12 ns | 4ns | 3 ns | 27 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2W Ta 41W Tc | 64A | 50A | 40V | N-Channel | 2660pF @ 20V | 5.8m Ω @ 13.5A, 10V | 3V @ 250μA | 14A Ta 20A Tc | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4840BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4840bdyt1e3-datasheets-4670.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Powers | 150°C | 10 ns | 12ns | 10 ns | 30 ns | 12.4A | 20V | SILICON | SWITCHING | 1V | 2.5W Ta 6W Tc | 40V | N-Channel | 2000pF @ 20V | 1 V | 9m Ω @ 12.4A, 10V | 3V @ 250μA | 19A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSC010NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsc010ne2lsatma1-datasheets-7797.pdf | 8-PowerTDFN | 26 Weeks | 8 | Tin | 96W | 1 | PG-TDSON-8-7 | 6ns | 39A | 20V | 25V | 2.5W Ta 96W Tc | 800μOhm | N-Channel | 4700pF @ 12V | 1mOhm @ 30A, 10V | 2V @ 250μA | 39A Ta 100A Tc | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD13N06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqd13n06tm-datasheets-7969.pdf | 60V | 10A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 4 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 5 ns | 25ns | 15 ns | 8 ns | 10A | 25V | SILICON | DRAIN | SWITCHING | 2.5W Ta 28W Tc | 40A | 85 mJ | 60V | N-Channel | 310pF @ 25V | 140m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 7.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| IRFR5305TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr5305trpbf-datasheets-3036.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 31A | 110A | 0.065Ohm | 280 mJ | P-Channel | 1200pF @ 25V | 65m Ω @ 16A, 10V | 4V @ 250μA | 31A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BSC070N10NS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc070n10ns5atma1-datasheets-7747.pdf | 8-PowerTDFN | 1.1mm | Contains Lead | 5 | 26 Weeks | 506.605978mg | 8 | yes | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 13 ns | 5ns | 6 ns | 24 ns | 14A | 20V | 100V | SILICON | DRAIN | SWITCHING | 2.5W Ta 83W Tc | 320A | 0.007Ohm | 55 mJ | 100V | N-Channel | 2700pF @ 50V | 7m Ω @ 40A, 10V | 3.8V @ 50μA | 80A Tc | 38nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRF7424TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf7424trpbf-datasheets-7619.pdf | -30V | -11A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 4.05mm | Lead Free | 12 Weeks | No SVHC | 13.5MOhm | 8 | EAR99 | Tin | No | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | -1.2V | 15 ns | 23ns | 76 ns | 150 ns | -11A | 20V | -30V | SILICON | 30V | 6.3 mm | -2.5V | 2.5W Ta | 60 ns | -30V | P-Channel | 4030pF @ 25V | -2.5 V | 13.5m Ω @ 11A, 10V | 2.5V @ 250μA | 11A Ta | 110nC @ 10V | 4.5V 10V | ±20V |
