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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMPH3010LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph3010lk3q13-datasheets-1420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 3.9W Ta | P-Channel | 6807pF @ 15V | 7.5m Ω @ 10A, 10V | 2.1V @ 250μA | 50A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60N1R4CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60n1r4chc5g-datasheets-1170.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 600V | 38W Tc | N-Channel | 370pF @ 100V | 1.4 Ω @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 7.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU6N50TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdu6n50tu-datasheets-1424.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 5 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 89W | 1 | FET General Purpose Power | 6 ns | 55ns | 35 ns | 25 ns | 6A | 30V | SILICON | SWITCHING | 89W Tc | 6A | 24A | 0.9Ohm | 270 mJ | 500V | N-Channel | 940pF @ 25V | 900m Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AOWF8N50 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 8A | 500V | 27.8W Tc | N-Channel | 1042pF @ 25V | 850m Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 28nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD5N50UTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd5n50utmws-datasheets-0978.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 12 hours ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 21ns | 20 ns | 27 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 40W Tc | TO-252AA | 3A | 2Ohm | 275 mJ | 500V | N-Channel | 650pF @ 25V | 2 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRLIZ24GPBF | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz24gpbf-datasheets-1443.pdf | TO-220-3 Full Pack | 8 Weeks | TO-220 Full Pack | 60V | 37W Tc | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR618DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir618dpt1ge3-datasheets-1367.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 200V | 48W Tc | N-Channel | 740pF @ 100V | 95mOhm @ 8A, 10V | 4V @ 250μA | 14.2A Tc | 16nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB812PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb812pbf-datasheets-1369.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 15 Weeks | No SVHC | 2.2Ohm | 3 | No | Single | 78W | 1 | FET General Purpose Power | 14 ns | 22ns | 17 ns | 24 ns | 3.6A | 20V | SILICON | SWITCHING | 3V | 78W Tc | TO-220AB | 110 ns | 500V | N-Channel | 810pF @ 25V | 2.2 Ω @ 2.2A, 10V | 5V @ 250μA | 3.6A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZXMP10A17GQTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp10a17gqta-datasheets-2381.pdf | TO-261-4, TO-261AA | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1.7A | 100V | 2W Ta | P-Channel | 424pF @ 50V | 450m Ω @ 1.2A, 6V | 4V @ 250μA | 1.7A Ta | 10.7nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R1K5C6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl65r1k5c6satma1-datasheets-1381.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 75.891673mg | 8 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 7.7 ns | 5.9ns | 18.2 ns | 33 ns | 3A | 30V | 650V | SILICON | DRAIN | SWITCHING | 26.6W Tc | 26 mJ | 650V | N-Channel | 225pF @ 100V | 1.5 Ω @ 1A, 10V | 3.5V @ 100μA | 3A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMT6009LFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6009lfg7-datasheets-2347.pdf | 8-PowerVDFN | 23 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 34A | 60V | 2.08W Ta 19.2W Tc | N-Channel | 1925pF @ 30V | 10m Ω @ 13.5A, 10V | 2V @ 250μA | 11A Ta 34A Tc | 33.5nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5C460NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd5c460nlt4g-datasheets-1320.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | 40V | 3W Ta 47W Tc | N-Channel | 2100pF @ 25V | 4.6m Ω @ 25A, 10V | 2.2V @ 60μA | 18A Ta 73A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3008SCP10-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 17 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7665S2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf7665s2tr-datasheets-1324.pdf | DirectFET™ Isometric SB | 4.826mm | 558.8μm | 3.95mm | 2 | 12 Weeks | No SVHC | 3 | EAR99 | No | BOTTOM | Single | 2.4W | 1 | FET General Purpose Power | R-XBCC-N2 | 3.8 ns | 6.4ns | 3.6 ns | 7.1 ns | 14.4A | 20V | SILICON | DRAIN | AMPLIFIER | 4V | 2.4W Ta 30W Tc | 77A | 58A | 0.062Ohm | 100V | N-Channel | 515pF @ 25V | 62m Ω @ 8.9A, 10V | 5V @ 25μA | 4.1A Ta 14.4A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIS776DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis776dnt1ge3-datasheets-1330.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | FET General Purpose Powers | S-XDSO-C5 | 18 ns | 11ns | 10 ns | 20 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52W Tc | 60A | 0.0062Ohm | 20 mJ | N-Channel | 1360pF @ 15V | 6.2m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 36nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMTH4005SPS-13 | Diodes Incorporated | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4005sps13-datasheets-1298.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 2.6W Ta 150W Tc | N-Channel | 3062pF @ 20V | 3.7m Ω @ 50A, 10V | 4V @ 250μA | 20.9A Ta 100A Tc | 49.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPLK70R600P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-iplk70r600p7atma1-datasheets-1342.pdf | 8-PowerTDFN | 18 Weeks | 700V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD30N05-20L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib422edkt1ge3-datasheets-2177.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 55V | 50W Tc | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9637-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9637100e118-datasheets-1184.pdf | 12.7mm | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15.875mm | Black | Brass, Metal | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 14.8 ns | 44.1ns | 35.1 ns | 33.7 ns | 31A | 15V | 100V | DRAIN | SWITCHING | 28 AWG | 24 AWG | 96W Tc | Gold | 44 mJ | 100V | N-Channel | 2681pF @ 25V | 36m Ω @ 10A, 10V | 2.1V @ 1mA | 31A Tc | 22.8nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||
| NVTFS6H850NWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-nvtfs6h850nwftag-datasheets-1348.pdf | 8-PowerWDFN | 5 | 18 Weeks | ACTIVE (Last Updated: 6 hours ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 3.2W Ta 107W Tc | 11A | 300A | 0.0095Ohm | 271 mJ | N-Channel | 1140pF @ 40V | 9.5m Ω @ 10A, 10V | 4V @ 70μA | 11A Ta 68A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| UPA2820T1S-E2-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2820t1se2at-datasheets-1276.pdf | 8-PowerWDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 22A | Single | 30V | 1.5W Ta 16W Tc | N-Channel | 2330pF @ 10V | 5.3m Ω @ 22A, 10V | 22A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y7R2-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y7r260ex-datasheets-1352.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | YES | SINGLE | GULL WING | 4 | 1 | 1 | 11.4 ns | 18.3ns | 20 ns | 33.4 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | MO-235 | 7.2mOhm | 88.2 mJ | 60V | N-Channel | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF7N60 | Alpha & Omega Semiconductor Inc. | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 7A | Single | 600V | 38.5W Tc | 7A | N-Channel | 1035pF @ 25V | 1.2 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2816T1S-E2-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2816t1se2at-datasheets-1286.pdf | 8-PowerWDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | Other Transistors | 12 ns | 35ns | 80 ns | 55 ns | 17A | 20V | Single | 30V | 1.5W Ta | P-Channel | 1160pF @ 10V | 15.5m Ω @ 17A, 10V | 17A Tc | 33.4nC @ 10V | 4.5V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKI10194 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/sanken-gki10194-datasheets-1196.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 7A | 100V | 3.1W Ta 77W Tc | N-Channel | 3990pF @ 25V | 17.6m Ω @ 20.4A, 10V | 2.5V @ 1mA | 7A Ta | 55.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKI03026 | Sanken | $14.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/sanken-gki03026-datasheets-1255.pdf | 8-PowerTDFN | Lead Free | 8 | yes | NOT SPECIFIED | NOT SPECIFIED | 22A | 30V | 3.1W Ta 77W Tc | N-Channel | 4010pF @ 15V | 2.6m Ω @ 68A, 10V | 2.5V @ 1mA | 22A Ta | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF634B-FP001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-irf634bfp001-datasheets-1309.pdf | TO-220-3 | 3 | 1.8g | ACTIVE, NOT REC (Last Updated: 3 weeks ago) | yes | No | e3 | Tin (Sn) | Single | 74W | 1 | R-PSFM-T3 | 15 ns | 75ns | 65 ns | 100 ns | 8.1A | 30V | SILICON | SWITCHING | 74W Tc | TO-220AB | 32.4A | 200 mJ | 250V | N-Channel | 1000pF @ 25V | 450m Ω @ 4.05A, 10V | 4V @ 250μA | 8.1A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N1R4CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n1r4chc5g-datasheets-1229.pdf | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 700V | 38W Tc | N-Channel | 370pF @ 100V | 1.4Ohm @ 1.2A, 10V | 4V @ 250μA | 3.3A Tc | 7.7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4778DY-T1-GE3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4778dyt1e3-datasheets-0263.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 15 ns | 50ns | 10 ns | 20 ns | 8A | 16V | SILICON | SWITCHING | 2.4W Ta 5W Tc | 8A | 0.023Ohm | 25V | N-Channel | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A Tc | 18nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| DMT6007LFGQ-7 | Diodes Incorporated | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6007lfgq13-datasheets-1154.pdf | 8-PowerVDFN | 20 Weeks | not_compliant | e3 | Matte Tin (Sn) | 260 | 30 | 60V | 2.2W Ta 62.5W Tc | N-Channel | 2090pF @ 30V | 6m Ω @ 20A, 10V | 2V @ 250μA | 15A Ta 80A Tc | 41.3nC @ 10V | 4.5V 10V | ±20V |
