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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVD4856NT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd4856nt4gvf01-datasheets-1756.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 32 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | 25V | 1.33W Ta 60W Tc | N-Channel | 2241pF @ 12V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 13.3A Ta 89A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2N100 | Alpha & Omega Semiconductor Inc. | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | No | 83W | 1 | FET General Purpose Power | 2A | 30V | Single | 1000V | 83W Tc | 2A | N-Channel | 580pF @ 25V | 9 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK60P03M1,RQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | No | DPAK | 2.7nF | 4.3ns | 11 ns | 60A | 20V | 30V | 63W Tc | N-Channel | 2700pF @ 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500μA | 60A Ta | 40nC @ 10V | 6.4 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlz44zpbf-datasheets-1663.pdf | 55V | 51A | TO-220-3 | 10.668mm | 8.77mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 13.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | Single | 80W | 1 | 14 ns | 160ns | 42 ns | 25 ns | 51A | 16V | 55V | SILICON | DRAIN | SWITCHING | 3V | 80W Tc | TO-220AB | 32 ns | 204A | 78 mJ | 55V | N-Channel | 1620pF @ 25V | 3 V | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 51A Tc | 36nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| FQI5N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqi5n60ctu-datasheets-1679.pdf | 600V | 5A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 4 Weeks | 2.084g | ACTIVE (Last Updated: 2 weeks ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 3.13W | 1 | FET General Purpose Power | R-PSIP-T3 | 10 ns | 42ns | 46 ns | 38 ns | 4.5A | 30V | SILICON | SWITCHING | 3.13W Ta 100W Tc | 600V | N-Channel | 670pF @ 25V | 2.5 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 19nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| AOTF7N65 | Alpha & Omega Semiconductor Inc. | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 7A | 650V | 38.5W Tc | N-Channel | 1060pF @ 25V | 1.56 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C03NWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs4c03nt3g-datasheets-0692.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | FET General Purpose Power | R-PDSO-F5 | 143A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.71W Ta 77W Tc | 900A | 0.0024Ohm | 549 mJ | N-Channel | 3071pF @ 15V | 2.1m Ω @ 30A, 10V | 2.2V @ 250μA | 31.4A Ta 143A Tc | 45.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOWF4N60 | Alpha & Omega Semiconductor Inc. | $3.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-262-3 Full Pack, I2Pak | 18 Weeks | 640pF | 4A | 600V | 25W Tc | N-Channel | 640pF @ 25V | 2.3Ohm @ 2A, 10V | 4.5V @ 250μA | 4A Tc | 14.5nC @ 10V | 2.3 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS5C466NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | /files/onsemiconductor-nttfs5c466nltag-datasheets-1701.pdf | 8-PowerWDFN | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | N-Channel | 7.3m Ω @ 10A, 10V | 2.2V @ 250μA | 14A Ta 51A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2814T1S-E2-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2814t1se2at-datasheets-1704.pdf | 8-PowerWDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | Other Transistors | 16 ns | 43ns | 220 ns | 130 ns | 24A | 20V | Single | 30V | 1.5W Ta | P-Channel | 2800pF @ 10V | 7.8m Ω @ 24A, 5V | 24A Tc | 74nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMPH3010LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph3010lpsq13-datasheets-1717.pdf | 8-PowerTDFN | 14 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.6W Ta | P-Channel | 6807pF @ 15V | 7.5m Ω @ 10A, 10V | 2.1V @ 250μA | 60A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0306AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms0306as-datasheets-1692.pdf | 8-PowerTDFN | 6mm | 1mm | 5mm | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 5ns | 4 ns | 32 ns | 49A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 59W Tc | MO-240AA | 26A | 100A | 0.0024Ohm | N-Channel | 3550pF @ 15V | 2.4m Ω @ 26A, 10V | 3V @ 1mA | 26A Ta 49A Tc | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPA60R1K0CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa60r1k0cexksa1-datasheets-1723.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 6.8A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 26W Tc | TO-220AB | 12A | 1Ohm | 46 mJ | N-Channel | 280pF @ 100V | 1 Ω @ 1.5A, 10V | 3.5V @ 130μA | 6.8A Tc | 13nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIA418DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia418djt1ge3-datasheets-1726.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 15 Weeks | 6 | EAR99 | No | 1 | Single | 12A | 2.4V | 3.5W Ta 19W Tc | 30V | N-Channel | 570pF @ 15V | 18m Ω @ 9A, 10V | 2.4V @ 250μA | 12A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R8-30MLHX | Nexperia USA Inc. | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn1r830mlhx-datasheets-1729.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 26 Weeks | 8 | 30V | 106W Ta | N-Channel | 3125pF @ 15V | 2.1m Ω @ 25A, 10V | 2.2V @ 1mA | 150A Ta | 58nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H009LSS-13 | Diodes Incorporated | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | 100V | 1.8W Ta | N-Channel | 2309pF @ 50V | 9m Ω @ 10A, 10V | 3V @ 250μA | 13A Ta 48A Tc | 40.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfr3711trpbf-datasheets-1707.pdf | 20V | 100A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 14 Weeks | 6.5MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 120W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 220ns | 12 ns | 17 ns | 110A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 120W Tc | TO-252AA | 440A | 460 mJ | 20V | N-Channel | 2980pF @ 10V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSO203SPHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bso203sphxuma1-datasheets-1637.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 8 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.6W | 1 | Not Qualified | 55ns | 7A | 12V | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 1.6W Ta | 35.6A | 97 mJ | P-Channel | 3750pF @ 15V | 21m Ω @ 8.9A, 4.5V | 1.2V @ 100μA | 7A Ta | 39nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| FQPF3N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf3n25-datasheets-1569.pdf | 250V | 2.3A | TO-220-3 Full Pack | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 27W | 1 | FET General Purpose Power | 6.6 ns | 25ns | 20 ns | 5.5 ns | 2.3A | 30V | SILICON | ISOLATED | SWITCHING | 27W Tc | 9.2A | 40 mJ | 250V | N-Channel | 170pF @ 25V | 2.2 Ω @ 1.15A, 10V | 5V @ 250μA | 2.3A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TSM4N60ECH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 20 Weeks | 600V | 86.2W Tc | N-Channel | 545pF @ 25V | 2.5 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS5C670NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nttfs5c670nltag-datasheets-4862.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | 70A | 60V | 3.2W Ta 63W Tc | N-Channel | 1400pF @ 25V | 6.5m Ω @ 35A, 10V | 2V @ 250μA | 16A Ta 70A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI70R950CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 150°C | -40°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ips70r950ceakma1-datasheets-6992.pdf | Lead Free | 3 | 18 Weeks | yes | EAR99 | Halogen Free | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 700V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 700V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 12A | 0.95Ohm | 50 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR7833TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr7833trlpbf-datasheets-1586.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 140W Tc | TO-252AA | 30A | 560A | 0.0045Ohm | 530 mJ | N-Channel | 4010pF @ 15V | 4.5m Ω @ 15A, 10V | 2.3V @ 250μA | 140A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMP4010SK3-13 | Diodes Incorporated | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4010sk313-datasheets-1596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | EAR99 | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.3W | P-Channel | 4234pF @ 20V | 9.9m Ω @ 9.8A, 10V | 2.5V @ 250μA | 50A Tc | 91nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR540ZTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr540ztrpbf-datasheets-0898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 91W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 42ns | 34 ns | 43 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 91W Tc | TO-252AA | 0.0285Ohm | 100V | N-Channel | 1690pF @ 25V | 28.5m Ω @ 21A, 10V | 4V @ 50μA | 35A Tc | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN012-100YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn012100ylx-datasheets-1623.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 238W Ta | MO-235 | 85A | 339A | 0.012Ohm | 139 mJ | N-Channel | 7973pF @ 25V | 11.9m Ω @ 25A, 10V | 2.1V @ 1mA | 85A Ta | 118nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS5CS70NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H009SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R0-80YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 238W Ta | MO-235 | 100A | 423A | 0.0085Ohm | 148 mJ | N-Channel | 8167pF @ 25V | 8m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Ta | 104nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| GKI06071 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-gki06071-datasheets-1322.pdf | 8-PowerTDFN | Lead Free | 8 | NOT SPECIFIED | NOT SPECIFIED | 11A | 60V | 3.1W Ta 77W Tc | N-Channel | 3810pF @ 25V | 6m Ω @ 34A, 10V | 2.5V @ 1mA | 11A Ta | 53.6nC @ 10V | 4.5V 10V | ±20V |
