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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDMS86581 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms86581-datasheets-1939.pdf | 8-PowerTDFN | 13 Weeks | yes | 60V | 50W Tj | N-Channel | 881pF @ 30V | 15m Ω @ 30A, 10V | 4V @ 250μA | 30A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI294A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | 100V | 73W Tc | N-Channel | 2305pF @ 50V | 12m Ω @ 20A, 10V | 2.5V @ 250μA | 55A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI4S60 | Alpha & Omega Semiconductor Inc. | $3.55 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aoi4s60-datasheets-4742.pdf | TO-251-3 Stub Leads, IPak | 3 | 16 Weeks | 3 | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 56.8W | 1 | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 56.8W Tc | 4A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| BUK664R6-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/nexperiausainc-buk664r640c118-datasheets-6710.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 23 ns | 52ns | 77 ns | 164 ns | 100A | 16V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 158W Tc | 80A | 511A | 0.0046Ohm | 226 mJ | N-Channel | 5200pF @ 25V | 4.6m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 88nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| RJK0349DSP-00#J0 | Renesas Electronics America | $9.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0349dsp00j0-datasheets-1951.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 16 Weeks | 8 | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 11 ns | 4.7ns | 9.8 ns | 58.5 ns | 20A | 20V | 30V | 2.5W Ta | N-Channel | 3850pF @ 10V | 3.8m Ω @ 10A, 10V | 20A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8327STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irf8327strpbf-datasheets-1858.pdf | DirectFET™ Isometric SQ | Lead Free | 3 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 42W | 1 | FET General Purpose Power | R-XBCC-N3 | 7.8 ns | 8.9ns | 5.3 ns | 9.3 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 42W Tc | 14A | 110A | 0.0073Ohm | 62 mJ | 30V | N-Channel | 1430pF @ 15V | 7.3m Ω @ 14A, 10V | 2.4V @ 25μA | 14A Ta 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTMFS5C442NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmfs5c442nlt1g-datasheets-3953.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | FET General Purpose Power | 121A | Single | 40V | 3.1W Ta 69W Tc | N-Channel | 3100pF @ 25V | 2.8m Ω @ 50A, 10V | 2V @ 250μA | 27A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU5N60NZTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdu5n60nztu-datasheets-1898.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 8 Weeks | yes | not_compliant | e3 | Tin (Sn) | 600V | 83W Tc | N-Channel | 600pF @ 25V | 2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 13nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4424ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/diodesincorporated-zvn4424a-datasheets-1055.pdf&product=diodesincorporated-zvn4424astz-6847782 | 240V | 260mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 750mW | 1 | 2.5 ns | 5ns | 5 ns | 40 ns | 260mA | 40V | SILICON | SWITCHING | 750mW Ta | 0.26A | 6Ohm | 240V | N-Channel | 200pF @ 25V | 5.5 Ω @ 500mA, 10V | 1.8V @ 1mA | 260mA Ta | 2.5V 10V | ±40V | |||||||||||||||||||||||||||||
| RSD080N06TL | ROHM Semiconductor | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohm-rsd080n06tl-datasheets-4731.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | No | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 9 ns | 13ns | 10 ns | 30 ns | 8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 15W Tc | 8A | 16A | 0.109Ohm | N-Channel | 380pF @ 10V | 80m Ω @ 8A, 10V | 2.5V @ 1mA | 8A Ta | 9.4nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NVMFS5C442NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c442nlaft1g-datasheets-0686.pdf | 8-PowerTDFN, 5 Leads | 40 Weeks | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 25V | 2.5m Ω @ 50A, 10V | 2V @ 250μA | 29A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3015LSSQ-13 | Diodes Incorporated | $2.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp3015lssq13-datasheets-1910.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 8 | 8-SO | 2.748nF | 13A | 30V | 2.5W Ta | P-Channel | 2748pF @ 20V | 11mOhm @ 13A, 10V | 2V @ 250μA | 13A Ta | 60.4nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC07N50C3X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 2 (1 Year) | ROHS3 Compliant | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7582 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7582-datasheets-1814.pdf | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | 5 | 10 Weeks | 32.13mg | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 2.5W | 1 | FET General Purpose Power | S-PDSO-N5 | 8.8 ns | 2ns | 1.6 ns | 20 ns | 16.7A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 52W Tc | MO-229 | 49A | 60A | 0.005Ohm | 25V | N-Channel | 1795pF @ 13V | 5m Ω @ 16.7A, 10V | 2.5V @ 250μA | 16.7A Ta 49A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| DMP4013SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4013sps13-datasheets-1819.pdf | 8-PowerTDFN | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | 40V | 1.6W Ta | P-Channel | 4004pF @ 20V | 15m Ω @ 10A, 10V | 3V @ 250μA | 11A Ta 61A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF7N70 | Alpha & Omega Semiconductor Inc. | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 7A | Single | 700V | 38.5W Tc | 7A | N-Channel | 1175pF @ 25V | 1.8 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD4856NT4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd4856nt4gvf01-datasheets-1756.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 32 Weeks | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | 25V | 1.33W Ta 60W Tc | N-Channel | 2241pF @ 12V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 13.3A Ta 89A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2N100 | Alpha & Omega Semiconductor Inc. | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | No | 83W | 1 | FET General Purpose Power | 2A | 30V | Single | 1000V | 83W Tc | 2A | N-Channel | 580pF @ 25V | 9 Ω @ 1A, 10V | 4.5V @ 250μA | 2A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C423NLWFAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c423nlt1g-datasheets-1851.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 20V | 2m Ω @ 50A, 10V | 2V @ 250μA | 31A Ta 150A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6N50TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdu6n50tu-datasheets-1424.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 4 Weeks | 260.37mg | 900mOhm | 3 | ACTIVE (Last Updated: 20 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | FDD6N50 | Single | 89W | 1 | FET General Purpose Power | R-PSSO-G2 | 6 ns | 55ns | 35 ns | 25 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 89W Tc | 6A | 24A | 270 mJ | 500V | N-Channel | 9400pF @ 25V | 900m Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 16.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IRFR3711TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3711trpbf-datasheets-1707.pdf | 20V | 110A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 120W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 220ns | 12 ns | 17 ns | 110A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 120W Tc | TO-252AA | 440A | 0.0065Ohm | 460 mJ | 20V | N-Channel | 2980pF @ 10V | 6.5m Ω @ 15A, 10V | 3V @ 250μA | 100A Tc | 44nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| TSM2301BCX RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 28 Weeks | SOT-23 | 20V | 900mW Ta | P-Channel | 415pF @ 6V | 100mOhm @ 2.8A, 4.5V | 950mV @ 250μA | 2.8A Tc | 4.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4431BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4431bdyt1e3-datasheets-6831.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 10 ns | 10ns | 10 ns | 70 ns | -5.7A | 20V | SILICON | 30V | 30V | -3V | 1.5W Ta | 0.03Ohm | P-Channel | 30m Ω @ 7.5A, 10V | 3V @ 250μA | 5.7A Ta | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NTTFS4C50NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2017 | 8-PowerWDFN | 18 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R5-25MLHX | Nexperia USA Inc. | $1.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn1r525mlhx-datasheets-1774.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 26 Weeks | 8 | 25V | 106W Ta | N-Channel | 3167pF @ 12V | 1.81m Ω @ 25A, 10V | 2.2V @ 1mA | 150A Ta | 58nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6016LJ3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | 29 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C50NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | 8-PowerTDFN | 2 Weeks | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD296A | Alpha & Omega Semiconductor Inc. | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N1R4CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n1r4chc5g-datasheets-1229.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | TO-252, (D-Pak) | 700V | 38W Tc | N-Channel | 370pF @ 100V | 1.4Ohm @ 1.2A, 10V | 4V @ 250μA | 3.3A Tc | 7.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9N20DTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irfr9n20dtrpbf-datasheets-5135.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 86W Tc | TO-252AA | 9.4A | 38A | 0.38Ohm | 100 mJ | N-Channel | 560pF @ 25V | 380m Ω @ 5.6A, 10V | 5.5V @ 250μA | 9.4A Tc | 27nC @ 10V | 10V | ±30V |
