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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PSMN012-100YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn012100ylx-datasheets-1623.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 238W Ta | MO-235 | 85A | 339A | 0.012Ohm | 139 mJ | N-Channel | 7973pF @ 25V | 11.9m Ω @ 25A, 10V | 2.1V @ 1mA | 85A Ta | 118nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS5CS70NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H009SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 22 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN8R0-80YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 238W Ta | MO-235 | 100A | 423A | 0.0085Ohm | 148 mJ | N-Channel | 8167pF @ 25V | 8m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Ta | 104nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| GKI06071 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-gki06071-datasheets-1322.pdf | 8-PowerTDFN | Lead Free | 8 | NOT SPECIFIED | NOT SPECIFIED | 11A | 60V | 3.1W Ta 77W Tc | N-Channel | 3810pF @ 25V | 6m Ω @ 34A, 10V | 2.5V @ 1mA | 11A Ta | 53.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7672 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc7672-datasheets-1628.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 5 | 23 Weeks | 165.33333mg | No SVHC | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | Gold | No | e4 | DUAL | Single | 2.3W | 1 | FET General Purpose Power | S-PDSO-N5 | 13 ns | 6ns | 5 ns | 31 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 33W Tc | 50A | 0.0057Ohm | 30V | N-Channel | 3890pF @ 15V | 1.9 V | 5.7m Ω @ 16.9A, 10V | 3V @ 250μA | 16.9A Ta 20A Tc | 57nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AOB2910L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aob2910l-datasheets-4615.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 30A | 100V | 2.1W Ta 50W Tc | N-Channel | 1190pF @ 50V | 23.5m Ω @ 20A, 10V | 2.7V @ 250μA | 6A Ta 30A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD5N60CTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqu5n60ctu-datasheets-4452.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.8A | 600V | 2.5W Ta 49W Tc | N-Channel | 670pF @ 25V | 2.5 Ω @ 1.4A, 10V | 4V @ 250μA | 2.8A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6006LPSWQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6006lpswq13-datasheets-1475.pdf | 8-PowerTDFN | 21 Weeks | 60V | 2.88W Ta 100W Tc | N-Channel | 2162pF @ 30V | 6.5m Ω @ 20A, 10V | 2.5V @ 250μA | 17.2A Ta 100A Tc | 34.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2825T1S-E2-AT | Renesas Electronics America | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2825t1se2at-datasheets-1476.pdf | 8-PowerWDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.5W | 1 | FET General Purpose Power | 24A | 20V | Single | 30V | 1.5W Ta 16.5W Tc | N-Channel | 2600pF @ 10V | 4.6m Ω @ 24A, 10V | 24A Tc | 57nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H015LFG-13 | Diodes Incorporated | $3.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h015lfg7-datasheets-4863.pdf | 8-PowerVDFN | 23 Weeks | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 42A | 100V | 2W Ta 35W Tc | N-Channel | 1871pF @ 50V | 13.5m Ω @ 20A, 10V | 3.5V @ 250μA | 10A Ta 42A Tc | 33.3nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD9411-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdd9411f085-datasheets-1408.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | 260.37mg | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 15A | 40V | 48.4W Tj | N-Channel | 1080pF @ 25V | 7.8m Ω @ 15A, 10V | 4V @ 250μA | 15A Tc | 22.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr3711ztrpbf-datasheets-1493.pdf | 20V | 93A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | 5.7MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 79W | 1 | R-PSSO-G2 | 12 ns | 13ns | 5.2 ns | 15 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 79W Tc | TO-252AA | 20V | N-Channel | 2160pF @ 10V | 5.7m Ω @ 15A, 10V | 2.45V @ 250μA | 93A Tc | 27nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AON7442 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | 8-PowerWDFN | 18 Weeks | 30V | 83W Tc | N-Channel | 2994pF @ 15V | 1.9m Ω @ 20A, 10V | 2.2V @ 250μA | 50A Tc | 65nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN5632N-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdn5632nf085-datasheets-1434.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | yes | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | R-PDSO-G3 | Single | 60V | 1.1W Ta | 1.7A | N-Channel | 475pF @ 15V | 82m Ω @ 1.7A, 10V | 3V @ 250μA | 1.7A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU12N20TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqd12n20tm-datasheets-7125.pdf | 200V | 9A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 6 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 13 ns | 120ns | 55 ns | 30 ns | 9A | 30V | SILICON | SWITCHING | 2.5W Ta 55W Tc | 9A | 0.28Ohm | 200V | N-Channel | 910pF @ 25V | 280m Ω @ 4.5A, 10V | 5V @ 250μA | 9A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| BUK7613-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk761375b118-datasheets-1378.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 3 | Single | 157W | 1 | R-PSSO-G2 | 18 ns | 36ns | 26 ns | 55 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 157W Tc | 75V | N-Channel | 2644pF @ 25V | 13m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| DMPH4013SK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.1W Ta | P-Channel | 4004pF @ 20V | 15m Ω @ 10A, 10V | 3V @ 250μA | 55A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4005SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth4005sk313-datasheets-1337.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 95A | 40V | 2.1W Ta 100W Tc | N-Channel | 3062pF @ 20V | 4.5m Ω @ 50A, 10V | 4V @ 250μA | 95A Tc | 49.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ800DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sij800dpt1ge3-datasheets-1548.pdf | PowerPAK® SO-8 | 21 Weeks | Unknown | 8 | No | 35.7W | 1 | PowerPAK® SO-8 | 2.4nF | 30 ns | 15ns | 15 ns | 45 ns | 20A | 20V | 40V | 4.2W Ta 35.7W Tc | 9.5mOhm | 40V | N-Channel | 2400pF @ 20V | 9.5mOhm @ 20A, 10V | 3V @ 250μA | 20A Tc | 56nC @ 10V | 9.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH10H015SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 22 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 1.5W Ta 55W Tc | N-Channel | 2343pF @ 50V | 14.5m Ω @ 20A, 10V | 4V @ 250μA | 8.4A Ta 50.5A Tc | 30.1nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ065N06LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz065n06ls5atma1-datasheets-1451.pdf | 8-PowerTDFN | 1.1mm | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 1 | 2.1W | 150°C | 5 ns | 14 ns | 14A | 20V | 60V | 5.4mOhm | 60V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH3004LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth3004lk313-datasheets-1552.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 23 Weeks | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 75A | 30V | 1.9W Ta | N-Channel | 2370pF @ 15V | 4m Ω @ 20A, 10V | 3V @ 250μA | 21A Ta 75A Tc | 44nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB812PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb812pbf-datasheets-1369.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 15 Weeks | No SVHC | 2.2Ohm | 3 | No | Single | 78W | 1 | FET General Purpose Power | 14 ns | 22ns | 17 ns | 24 ns | 3.6A | 20V | SILICON | SWITCHING | 3V | 78W Tc | TO-220AB | 110 ns | 500V | N-Channel | 810pF @ 25V | 2.2 Ω @ 2.2A, 10V | 5V @ 250μA | 3.6A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMP10A17GQTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp10a17gqta-datasheets-2381.pdf | TO-261-4, TO-261AA | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1.7A | 100V | 2W Ta | P-Channel | 424pF @ 50V | 450m Ω @ 1.2A, 6V | 4V @ 250μA | 1.7A Ta | 10.7nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R1K5C6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl65r1k5c6satma1-datasheets-1381.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 75.891673mg | 8 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 7.7 ns | 5.9ns | 18.2 ns | 33 ns | 3A | 30V | 650V | SILICON | DRAIN | SWITCHING | 26.6W Tc | 26 mJ | 650V | N-Channel | 225pF @ 100V | 1.5 Ω @ 1A, 10V | 3.5V @ 100μA | 3A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NVMFS5C450NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c450nlwfaft1g-datasheets-4970.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 250μA | 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCD050N20TL | ROHM Semiconductor | $3.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rcd050n20tl-datasheets-1389.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 40 Weeks | 3 | EAR99 | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 17 ns | 15ns | 11 ns | 22 ns | 5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 20W Tc | 5A | 20A | 0.618Ohm | N-Channel | 380pF @ 25V | 618m Ω @ 2.5A, 10V | 5.25V @ 1mA | 5A Ta | 9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK7611-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk761155b118-datasheets-1392.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 157W | 1 | R-PSSO-G2 | 11 ns | 45ns | 27 ns | 41 ns | 84A | 20V | 55V | SILICON | DRAIN | SWITCHING | 157W Tc | 75A | 0.011Ohm | 55V | N-Channel | 2604pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOT12N30L | Alpha & Omega Semiconductor Inc. | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | TO-220-3 | 18 Weeks | FET General Purpose Power | 11.5A | Single | 300V | 132W Tc | N-Channel | 790pF @ 25V | 420m Ω @ 6A, 10V | 4.5V @ 250μA | 11.5A Tc | 16nC @ 10V | 10V | ±30V |
