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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPS60R400CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 150°C | -40°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips60r400ceakma1-datasheets-2077.pdf | Contains Lead | 3 | 18 Weeks | yes | EAR99 | Halogen Free | NO | SINGLE | THROUGH-HOLE | 1 | R-PSIP-T3 | 600V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-251 | 30A | 0.4Ohm | 210 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVP4424ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/diodesincorporated-zvp4424a-datasheets-0390.pdf | -240V | -200mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 9Ohm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 750mW | 1 | 8 ns | 8ns | 8 ns | 26 ns | 200mA | 40V | SILICON | SWITCHING | 240V | 750mW Ta | 0.2A | P-Channel | 200pF @ 25V | 9 Ω @ 200mA, 10V | 2V @ 1mA | 200mA Ta | 3.5V 10V | ±40V | ||||||||||||||||||||||||||||||||||||
| SKI07171 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski07171-datasheets-2083.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 46A | 75V | 90W Tc | N-Channel | 2520pF @ 25V | 13.6m Ω @ 22.8A, 10V | 2.5V @ 650μA | 46A Tc | 36.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SKI10297 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski10297-datasheets-2084.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | NOT SPECIFIED | NOT SPECIFIED | 34A | 100V | 90W Tc | N-Channel | 2540pF @ 25V | 27.9m Ω @ 17.1A, 10V | 2.5V @ 650μA | 34A Tc | 35.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN5325N3-G-P002 | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-tn5325k1g-datasheets-0773.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 18 Weeks | 453.59237mg | yes | BOTTOM | 1 | Single | 1 | O-PBCY-T3 | 20 ns | 15ns | 25 ns | 25 ns | 215mA | 20V | SWITCHING | 740mW Ta | 7Ohm | 23 pF | 250V | N-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | 215mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5832NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5832nlt1g-datasheets-2234.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 3.7W | 1 | FET General Purpose Power | 13 ns | 24ns | 8 ns | 27 ns | 21A | 20V | SILICON | DRAIN | 40V | 40V | 3.7W Ta 127W Tc | 0.0072Ohm | N-Channel | 2700pF @ 25V | 4.2m Ω @ 20A, 10V | 2.4V @ 250μA | 21A Ta | 51nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD60N10S412ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd60n10s412atma1-datasheets-2098.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 6 ns | 3ns | 13 ns | 9 ns | 60A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 94W Tc | 240A | 0.0122Ohm | 120 mJ | N-Channel | 2470pF @ 25V | 12.2m Ω @ 60A, 10V | 3.5V @ 46μA | 60A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMTH43M8LFGQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth43m8lfgq13-datasheets-1989.pdf | 8-PowerVDFN | 20 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.62W Ta 65.2W Tc | N-Channel | 2798pF @ 20V | 3m Ω @ 20A, 10V | 2.5V @ 250μA | 24A Ta 100A Tc | 40.1nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSH070N05TB1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/rohmsemiconductor-rsh070n05tb1-datasheets-1915.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 2W | 8-SOP | 1nF | 7A | 45V | 2W Ta | 25mOhm | 45V | N-Channel | 1000pF @ 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | 7A Ta | 16.8nC @ 5V | 25 mΩ | 4V 10V | 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TJ8S06M3L(T6L1,NQ) | Toshiba Semiconductor and Storage | $3.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 6ns | 34 ns | 8A | 10V | 60V | 27W Tc | P-Channel | 890pF @ 10V | 104m Ω @ 4A, 10V | 3V @ 1mA | 8A Ta | 19nC @ 10V | 6V 10V | +10V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT7N65 | Alpha & Omega Semiconductor Inc. | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 192W | 1 | 7A | 30V | 650V | 192W Tc | N-Channel | 1060pF @ 25V | 1.56 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A Tc | 23nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK8S06K3L(T6L1,NQ) | Toshiba Semiconductor and Storage | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 7ns | 4 ns | 8A | 20V | 60V | 25W Tc | N-Channel | 400pF @ 10V | 54m Ω @ 4A, 10V | 3V @ 1mA | 8A Ta | 10nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf730bpbf-datasheets-1961.pdf | TO-220-3 | 3 | 8 Weeks | No | e3 | MATTE TIN OVER NICKEL | SINGLE | 1 | R-PSFM-T3 | 12 ns | 11ns | 8 ns | 14 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400V | 400V | 104W Tc | TO-220AB | 6A | 13A | 1Ohm | 104 mJ | N-Channel | 311pF @ 100V | 1 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPC8133,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8-SOP | 2.9nF | 8ns | 100 ns | 9A | 20V | 40V | 1W Ta | P-Channel | 2900pF @ 10V | 15mOhm @ 4.5A, 10V | 2V @ 500μA | 9A Ta | 64nC @ 10V | 15 mΩ | 4.5V 10V | +20V, -25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT32M5LFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt32m5lfg13-datasheets-1969.pdf | 8-PowerVDFN | 24 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.3W Ta | N-Channel | 4066pF @ 15V | 1.7m Ω @ 20A, 10V | 3V @ 250μA | 30A Ta | 67.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH3004LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth3004lps13-datasheets-1972.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 145A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 136W Tc | 22A | 110 mJ | N-Channel | 2370pF @ 15V | 3.8m Ω @ 20A, 10V | 3V @ 250μA | 22A Ta 145A Tc | 43.7nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||
| SKI03036 | Sanken | $1.73 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-ski03036-datasheets-1977.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | NOT SPECIFIED | NOT SPECIFIED | 80A | 30V | 90W Tc | N-Channel | 2460pF @ 15V | 3.7m Ω @ 57A, 10V | 2.5V @ 650μA | 80A Tc | 38.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H852NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h852nt1g-datasheets-1414.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.6W Ta 54W Tc | N-Channel | 760pF @ 40V | 14.2m Ω @ 10A, 10V | 4V @ 45μA | 10A Ta 40A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR8103VTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr8103vtrpbf-datasheets-1867.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 115W Tc | TO-252AA | 91A | 363A | 0.0105Ohm | N-Channel | 2672pF @ 16V | 9m Ω @ 15A, 10V | 3V @ 250μA | 91A Tc | 27nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMTH43M8LFGQ-13 | Diodes Incorporated | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth43m8lfgq13-datasheets-1989.pdf | 8-PowerVDFN | 20 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 2.62W Ta 65.2W Tc | N-Channel | 2798pF @ 20V | 3m Ω @ 20A, 10V | 2.5V @ 250μA | 24A Ta 100A Tc | 40.1nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp5n50dge3-datasheets-1990.pdf | TO-220-3 | 10.51mm | 9.01mm | 4.65mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 104W | 1 | FET General Purpose Powers | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 104W Tc | TO-220AB | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| FDD8896-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd8896f085-datasheets-1877.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 2 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 106ns | 41 ns | 53 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | TO-252AA | 94A | 0.0068Ohm | 168 mJ | 30V | N-Channel | 2525pF @ 15V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 17A Ta 94A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSC065N06LS5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc065n06ls5atma1-datasheets-2003.pdf | 8-PowerTDFN | 1.1mm | 5 | 26 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.5W | 1 | 150°C | R-PDSO-F5 | 5 ns | 14 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 46W Tc | 256A | 0.0065Ohm | 60V | N-Channel | 1800pF @ 30V | 6.5m Ω @ 32A, 10V | 2.3V @ 20μA | 64A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHF9520S-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9520spbf-datasheets-1890.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 60W Tc | P-Channel | 390pF @ 25V | 600mOhm @ 4.1A, 10V | 4V @ 250μA | 6.8A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA65R1K5CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipa65r1k5cexksa1-datasheets-2018.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 5.2A | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 8.3A | 26 mJ | N-Channel | 225pF @ 100V | 1.5 Ω @ 1A, 10V | 3.5V @ 130μA | 5.2A Tc | 10.5nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BUK664R6-40C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/nexperiausainc-buk664r640c118-datasheets-6710.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 23 ns | 52ns | 77 ns | 164 ns | 100A | 16V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 158W Tc | 80A | 511A | 0.0046Ohm | 226 mJ | N-Channel | 5200pF @ 25V | 4.6m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 88nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| RJK0349DSP-00#J0 | Renesas Electronics America | $9.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0349dsp00j0-datasheets-1951.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 16 Weeks | 8 | yes | NOT SPECIFIED | 8 | NOT SPECIFIED | 11 ns | 4.7ns | 9.8 ns | 58.5 ns | 20A | 20V | 30V | 2.5W Ta | N-Channel | 3850pF @ 10V | 3.8m Ω @ 10A, 10V | 20A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF8327STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irf8327strpbf-datasheets-1858.pdf | DirectFET™ Isometric SQ | Lead Free | 3 | 12 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 42W | 1 | FET General Purpose Power | R-XBCC-N3 | 7.8 ns | 8.9ns | 5.3 ns | 9.3 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 42W Tc | 14A | 110A | 0.0073Ohm | 62 mJ | 30V | N-Channel | 1430pF @ 15V | 7.3m Ω @ 14A, 10V | 2.4V @ 25μA | 14A Ta 60A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTMFS5C442NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-ntmfs5c442nlt1g-datasheets-3953.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | FET General Purpose Power | 121A | Single | 40V | 3.1W Ta 69W Tc | N-Channel | 3100pF @ 25V | 2.8m Ω @ 50A, 10V | 2V @ 250μA | 27A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDU5N60NZTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdu5n60nztu-datasheets-1898.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 8 Weeks | yes | not_compliant | e3 | Tin (Sn) | 600V | 83W Tc | N-Channel | 600pF @ 25V | 2 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 13nC @ 10V | 10V | ±25V |
