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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9222-55A/C1,118 | NXP USA Inc. | $13.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk922255a118-datasheets-0898.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 103W Tc | N-Channel | 2210pF @ 25V | 20m Ω @ 25A, 10V | 2V @ 1mA | 48A Tc | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| PHP96NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb96nq03lt118-datasheets-6461.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 115W Tc | TO-220AB | 75A | 240A | 0.0075Ohm | 185 mJ | N-Channel | 2200pF @ 25V | 4.95m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 26.7nC @ 5V | 5V 10V | ±20V | |||||||||||||
| BUK9Y98-80E,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 80V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y25-80E/CX | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 80V | 95W Tc | N-Channel | 1800pF @ 25V | 25m Ω @ 10A, 10V | 4V @ 1mA | 39A Tc | 25.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PMN35EN,115 | NXP USA Inc. | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn35en125-datasheets-8842.pdf | SC-74, SOT-457 | 6 | 2013-06-14 00:00:00 | 30V | 500mW Ta | N-Channel | 334pF @ 15V | 31m Ω @ 5.1A, 10V | 2.5V @ 250μA | 5.1A Ta | 9.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PHT11N06LT,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 8.3W Tc | 4.9A | 19A | 0.04Ohm | 150 pF | 60 mJ | N-Channel | 1400pF @ 25V | 210ns | 125ns | 40m Ω @ 5A, 5V | 2V @ 1mA | 4.9A Ta | 17nC @ 5V | 5V | ±13V | |||||||||||
| PH1875L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph1875l115-datasheets-6453.pdf | SC-100, SOT-669 | 4 | EAR99 | 8541.29.00.95 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 75V | 62.5W Tc | 45.8A | 183A | 0.0165Ohm | 165 mJ | N-Channel | 2600pF @ 25V | 16.5m Ω @ 20A, 10V | 2V @ 1mA | 45.8A Tc | 33.4nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||
| IRF7478PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf8910pbf-datasheets-2215.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 60V | 2.5W Ta | N-Channel | 1.74pF @ 25V | 26mOhm @ 4.2A, 10V | 3V @ 250μA | 7A Ta | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK9E2R8-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9e2r860e127-datasheets-6454.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 349W Tc | 120A | 952A | 0.0028Ohm | 655 mJ | N-Channel | 17450pF @ 25V | 2.6m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 120nC @ 5V | 5V 10V | ±10V | ||||||||||||||||
| NDF02N60ZG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds8858h-datasheets-2305.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 24W Tc | N-Channel | 274pF @ 25V | 4.8Ohm @ 1A, 10V | 4.5V @ 50μA | 2.4A Tc | 10.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| BUK7E1R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7e1r630e127-datasheets-6455.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 349W Tc | 120A | 1408A | 0.0016Ohm | 1405 mJ | N-Channel | 11960pF @ 25V | 1.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 154nC @ 10V | 10V | ±20V | ||||||||||||||||
| BUK9237-55A/C1,118 | NXP USA Inc. | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk923755a118-datasheets-4757.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 77W Tc | N-Channel | 1236pF @ 25V | 33m Ω @ 15A, 10V | 2V @ 1mA | 32A Tc | 17.6nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| PHD108NQ03LT,118 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/nxpusainc-phb108nq03lt118-datasheets-6292.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 187W Tc | TO-252AA | 75A | 240A | 0.0075Ohm | 180 mJ | N-Channel | 1375pF @ 12V | 6m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 16.3nC @ 4.5V | 5V 10V | ±20V | |||||||||||
| BUK952R3-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk952r340e127-datasheets-6459.pdf | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 293W Tc | TO-220AB | 120A | 988A | 0.0025Ohm | 622 mJ | N-Channel | 13160pF @ 25V | 2.2m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 87.8nC @ 5V | 5V 10V | ±10V | |||||||||||||||
| PHB96NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb96nq03lt118-datasheets-6461.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 25V | 115W Tc | N-Channel | 2200pF @ 25V | 4.95mOhm @ 25A, 10V | 2V @ 1mA | 75A Tc | 26.7nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN7R6-60XSQ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | TO-220-3 Full Pack, Isolated Tab | 60V | 46W Tc | N-Channel | 2651pF @ 30V | 7.8m Ω @ 25A, 10V | 4.6V @ 1mA | 51.5A Tc | 38.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN8R5-100XSQ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn8r5100xsq-datasheets-6463.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 100V | 55W Tc | N-Channel | 5512pF @ 50V | 8.5m Ω @ 10A, 10V | 4V @ 1mA | 49A Tj | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK9E1R9-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 349W | 40V | 40V | 120A | 1228A | 0.00193Ohm | 1008 mJ | N-Channel | |||||||||||||||||||||||||
| BUK653R5-55C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 55V | 263W Tc | N-Channel | 11516pF @ 25V | 3.9m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 191nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| PHB23NQ10LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb23nq10lt118-datasheets-6469.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 100V | 98W Tc | N-Channel | 1704pF @ 25V | 72m Ω @ 10A, 10V | 2V @ 1mA | 23A Tc | 49nC @ 10V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| BUK9Y9R9-80E,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 80V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN5R6-100XS,127 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-220-3 Full Pack, Isolated Tab | not_compliant | 3 | 2013-06-14 00:00:00 | 100V | 60W Tc | N-Channel | 8061pF @ 50V | 5.6m Ω @ 15A, 10V | 4V @ 1mA | 61.8A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUK654R6-55C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 55V | 204W Tc | N-Channel | 7750pF @ 25V | 5.4m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 124nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| BUK7C3R1-80EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 80V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7C5R4-100EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 100V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9E6R1-100E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9e6r1100e127-datasheets-6429.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 349W Tc | 120A | 576A | 0.0061Ohm | 387 mJ | N-Channel | 17460pF @ 25V | 5.9m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 133nC @ 5V | 5V 10V | ±10V | ||||||||||||||||
| BUK9E8R5-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9e8r540e127-datasheets-6452.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 96W Tc | 75A | 315A | 0.0081Ohm | 44 mJ | N-Channel | 2600pF @ 25V | 6.6m Ω @ 20A, 10V | 2.1V @ 1mA | 75A Tc | 20.9nC @ 5V | 5V 10V | ±10V | ||||||||||||||||
| PMN38EN,165 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn38en135-datasheets-3900.pdf | SC-74, SOT-457 | 6 | 2013-06-14 00:00:00 | 30V | 1.75W Tc | N-Channel | 495pF @ 25V | 38m Ω @ 3A, 10V | 2V @ 1mA | 5.4A Tc | 6.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BUK958R5-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 96W Tc | TO-220AB | 75A | 315A | 0.0081Ohm | 44 mJ | N-Channel | 2600pF @ 25V | 6.6m Ω @ 20A, 10V | 2.1V @ 1mA | 75A Tc | 20.9nC @ 5V | 5V 10V | ±10V | ||||||||||||||||
| PHP165NQ08T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php165nq08t127-datasheets-6436.pdf | TO-220-3 | unknown | NO | 3 | FET General Purpose Power | Single | 75V | 250W Tc | 75A | N-Channel | 8250pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 165nC @ 10V | 10V | ±20V |
