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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK951R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 349W Tc | TO-220AB | 120A | 1400A | 0.0016Ohm | 1405 mJ | N-Channel | 16150pF @ 25V | 1.4m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 113nC @ 5V | 5V 10V | ±10V | ||||||||||||||||
| MCH3427-TL-E | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/rochesterelectronicsllc-mch6626tle-datasheets-2711.pdf | 3-SMD, Flat Lead | 3-MCPH | 20V | 1W Ta | N-Channel | 400pF @ 10V | 52mOhm @ 2A, 4V | 4A Ta | 6nC @ 4V | ||||||||||||||||||||||||||||||||||||||||||
| SCH1337-TL-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-sfm9110tf-datasheets-5082.pdf | SOT-563, SOT-666 | 6-SCH | 30V | 800mW Ta | P-Channel | 172pF @ 10V | 150mOhm @ 1A, 10V | 2A Ta | 3.9nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BUK7E1R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7e1r630e127-datasheets-6455.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 349W Tc | 120A | 1408A | 0.0016Ohm | 1405 mJ | N-Channel | 11960pF @ 25V | 1.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 154nC @ 10V | 10V | ±20V | ||||||||||||||||
| BUK9237-55A/C1,118 | NXP USA Inc. | $1.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk923755a118-datasheets-4757.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 77W Tc | N-Channel | 1236pF @ 25V | 33m Ω @ 15A, 10V | 2V @ 1mA | 32A Tc | 17.6nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| PHD108NQ03LT,118 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/nxpusainc-phb108nq03lt118-datasheets-6292.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 187W Tc | TO-252AA | 75A | 240A | 0.0075Ohm | 180 mJ | N-Channel | 1375pF @ 12V | 6m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 16.3nC @ 4.5V | 5V 10V | ±20V | |||||||||||
| BUK952R3-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk952r340e127-datasheets-6459.pdf | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 293W Tc | TO-220AB | 120A | 988A | 0.0025Ohm | 622 mJ | N-Channel | 13160pF @ 25V | 2.2m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 87.8nC @ 5V | 5V 10V | ±10V | |||||||||||||||
| PHB96NQ03LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb96nq03lt118-datasheets-6461.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 25V | 115W Tc | N-Channel | 2200pF @ 25V | 4.95mOhm @ 25A, 10V | 2V @ 1mA | 75A Tc | 26.7nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN7R6-60XSQ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | TO-220-3 Full Pack, Isolated Tab | 60V | 46W Tc | N-Channel | 2651pF @ 30V | 7.8m Ω @ 25A, 10V | 4.6V @ 1mA | 51.5A Tc | 38.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN8R5-100XSQ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn8r5100xsq-datasheets-6463.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 100V | 55W Tc | N-Channel | 5512pF @ 50V | 8.5m Ω @ 10A, 10V | 4V @ 1mA | 49A Tj | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK9E1R9-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 349W | 40V | 40V | 120A | 1228A | 0.00193Ohm | 1008 mJ | N-Channel | |||||||||||||||||||||||||
| BUK653R5-55C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 55V | 263W Tc | N-Channel | 11516pF @ 25V | 3.9m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 191nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| PHB23NQ10LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb23nq10lt118-datasheets-6469.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 100V | 98W Tc | N-Channel | 1704pF @ 25V | 72m Ω @ 10A, 10V | 2V @ 1mA | 23A Tc | 49nC @ 10V | 5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| BUK9Y9R9-80E,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 80V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y25-80E/CX | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 80V | 95W Tc | N-Channel | 1800pF @ 25V | 25m Ω @ 10A, 10V | 4V @ 1mA | 39A Tc | 25.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PMN35EN,115 | NXP USA Inc. | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn35en125-datasheets-8842.pdf | SC-74, SOT-457 | 6 | 2013-06-14 00:00:00 | 30V | 500mW Ta | N-Channel | 334pF @ 15V | 31m Ω @ 5.1A, 10V | 2.5V @ 250μA | 5.1A Ta | 9.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PHT11N06LT,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 8.3W Tc | 4.9A | 19A | 0.04Ohm | 150 pF | 60 mJ | N-Channel | 1400pF @ 25V | 210ns | 125ns | 40m Ω @ 5A, 5V | 2V @ 1mA | 4.9A Ta | 17nC @ 5V | 5V | ±13V | |||||||||||
| PH1875L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph1875l115-datasheets-6453.pdf | SC-100, SOT-669 | 4 | EAR99 | 8541.29.00.95 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 75V | 75V | 62.5W Tc | 45.8A | 183A | 0.0165Ohm | 165 mJ | N-Channel | 2600pF @ 25V | 16.5m Ω @ 20A, 10V | 2V @ 1mA | 45.8A Tc | 33.4nC @ 5V | 4.5V 10V | ±15V | ||||||||||||||||
| IRF7478PBF | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-irf8910pbf-datasheets-2215.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SO | 60V | 2.5W Ta | N-Channel | 1.74pF @ 25V | 26mOhm @ 4.2A, 10V | 3V @ 250μA | 7A Ta | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK9E2R8-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9e2r860e127-datasheets-6454.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 349W Tc | 120A | 952A | 0.0028Ohm | 655 mJ | N-Channel | 17450pF @ 25V | 2.6m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 120nC @ 5V | 5V 10V | ±10V | ||||||||||||||||
| NDF02N60ZG | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nds8858h-datasheets-2305.pdf | TO-220-3 Full Pack | TO-220FP | 600V | 24W Tc | N-Channel | 274pF @ 25V | 4.8Ohm @ 1A, 10V | 4.5V @ 50μA | 2.4A Tc | 10.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| PHP165NQ08T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php165nq08t127-datasheets-6436.pdf | TO-220-3 | unknown | NO | 3 | FET General Purpose Power | Single | 75V | 250W Tc | 75A | N-Channel | 8250pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK7Y25-60E/GFX | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK653R4-40C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk653r440c127-datasheets-6438.pdf | TO-220-3 | 3 | 2013-06-14 00:00:00 | 40V | 204W Tc | N-Channel | 8020pF @ 25V | 3.6m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 125nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| BUK9E15-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 96W Tc | 54A | 216A | 0.015Ohm | 40.5 mJ | N-Channel | 2651pF @ 25V | 13m Ω @ 15A, 10V | 2.1V @ 1mA | 54A Tc | 20.5nC @ 5V | 5V 10V | ±10V | |||||||||||||||||
| PSMN3R9-60XSQ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn3r960xsq-datasheets-6439.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 60V | 55W Tc | N-Channel | 5494pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 103nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PH3430AL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | SC-100, SOT-669 | 30V | N-Channel | 2458pF @ 12V | 3.5m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 41nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||
| PHU97NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 107W Tc | 75A | 300A | 0.0109Ohm | 60 mJ | N-Channel | 1570pF @ 12V | 6.6m Ω @ 25A, 10V | 2.15V @ 1mA | 75A Tc | 11.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||
| CPMF-1200-S160B | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | https://pdf.utmel.com/r/datasheets/creewolfspeed-cpmf1200s160b-datasheets-6443.pdf | Die | 1200V | 202W Tj | N-Channel | 928pF @ 800V | 220m Ω @ 10A, 20V | 4V @ 1mA | 28A Tj | 47.1nC @ 20V | 20V | +25V, -5V | ||||||||||||||||||||||||||||||||||||||||
| BUK953R2-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk953r240e127-datasheets-6445.pdf | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 234W Tc | TO-220AB | 100A | 781A | 0.0032Ohm | 419 mJ | N-Channel | 9150pF @ 25V | 2.8m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 69.5nC @ 5V | 5V 10V | ±10V |
