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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7C1R2-40EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 40V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||
| BUK7210-55B/C1,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~185°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 167W Tc | N-Channel | 2453pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PMT200EN,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-261-4, TO-261AA | e3 | Tin (Sn) | YES | 4 | FET General Purpose Power | Single | 100V | 800mW Ta 8.3W Tc | 1.8A | N-Channel | 475pF @ 80V | 235m Ω @ 1.5A, 10V | 2.5V @ 250μA | 1.8A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| PSMN5R6-100XS,127 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-220-3 Full Pack, Isolated Tab | not_compliant | 3 | 2013-06-14 00:00:00 | 100V | 60W Tc | N-Channel | 8061pF @ 50V | 5.6m Ω @ 15A, 10V | 4V @ 1mA | 61.8A Tc | 145nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| BUK654R6-55C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 55V | 204W Tc | N-Channel | 7750pF @ 25V | 5.4m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 124nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| BUK7C3R1-80EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 80V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||
| BUK7C5R4-100EJ | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 100V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||
| BUK9E6R1-100E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9e6r1100e127-datasheets-6429.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 349W Tc | 120A | 576A | 0.0061Ohm | 387 mJ | N-Channel | 17460pF @ 25V | 5.9m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 133nC @ 5V | 5V 10V | ±10V | |||||||||||
| BUK9E8R5-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9e8r540e127-datasheets-6452.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 96W Tc | 75A | 315A | 0.0081Ohm | 44 mJ | N-Channel | 2600pF @ 25V | 6.6m Ω @ 20A, 10V | 2.1V @ 1mA | 75A Tc | 20.9nC @ 5V | 5V 10V | ±10V | |||||||||||
| PMN38EN,165 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmn38en135-datasheets-3900.pdf | SC-74, SOT-457 | 6 | 2013-06-14 00:00:00 | 30V | 1.75W Tc | N-Channel | 495pF @ 25V | 38m Ω @ 3A, 10V | 2V @ 1mA | 5.4A Tc | 6.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK958R5-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 96W Tc | TO-220AB | 75A | 315A | 0.0081Ohm | 44 mJ | N-Channel | 2600pF @ 25V | 6.6m Ω @ 20A, 10V | 2.1V @ 1mA | 75A Tc | 20.9nC @ 5V | 5V 10V | ±10V | |||||||||||
| BUK655R0-75C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 75V | 263W Tc | N-Channel | 11400pF @ 25V | 5.3m Ω @ 25A, 10V | 2.8V @ 1mA | 120A Tc | 177nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| PMT29EN,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/nxpusainc-pmt29en115-datasheets-8895.pdf | TO-261-4, TO-261AA | 4 | 2013-06-14 00:00:00 | 30V | 820mW Ta 8.33W Tc | N-Channel | 492pF @ 15V | 29m Ω @ 6A, 10V | 2.5V @ 250μA | 6A Ta | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| PSMN9R5-100XS,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn9r5100xs127-datasheets-6414.pdf | TO-220-3 Full Pack, Isolated Tab | not_compliant | 3 | 2013-06-14 00:00:00 | 100V | 52.6W Tc | N-Channel | 4454pF @ 50V | 9.6m Ω @ 10A, 10V | 4V @ 1mA | 44.2A Tc | 81.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK9E4R4-80E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 349W Tc | 120A | 715A | 0.0044Ohm | 488 mJ | N-Channel | 17130pF @ 25V | 4.2m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 123nC @ 5V | 5V 10V | ±10V | ||||||||||||
| PHX18NQ20T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/nxpusainc-phx18nq20t127-datasheets-6416.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 30W Tc | 8.2A | 33A | 0.18Ohm | N-Channel | 1850pF @ 25V | 180m Ω @ 8A, 10V | 4V @ 1mA | 8.2A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||
| BUK954R4-80E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk954r480e127-datasheets-6417.pdf | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 349W Tc | TO-220AB | 120A | 715A | 0.0044Ohm | 488 mJ | N-Channel | 17130pF @ 25V | 4.2m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 123nC @ 5V | 5V 10V | ±10V | ||||||||||
| BUK951R9-40E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk951r940e127-datasheets-6418.pdf | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 349W Tc | TO-220AB | 120A | 1257A | 0.00184Ohm | 1008 mJ | N-Channel | 16400pF @ 25V | 1.7m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 120nC @ 5V | 5V 10V | ±10V | ||||||||||
| BUK7628-100A/C,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7628100a118-datasheets-5264.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 100V | 166W Tc | N-Channel | 3100pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BUK75150-55A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7615055a118-datasheets-6274.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 36W Tc | TO-220AB | 11A | 44A | 0.15Ohm | 16 mJ | N-Channel | 322pF @ 25V | 150m Ω @ 5A, 10V | 4V @ 1mA | 11A Tc | 5.5nC @ 10V | 10V | ±20V | ||||||||
| BUK7524-55A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk762455a118-datasheets-6287.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 106W Tc | TO-220AB | 47A | 188A | 0.024Ohm | 76 mJ | N-Channel | 1310pF @ 25V | 24m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 10V | ±20V | ||||||||||
| PHX9NQ20T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx9nq20t127-datasheets-6403.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 25W Tc | 5.2A | 21A | 0.4Ohm | 93 mJ | N-Channel | 959pF @ 25V | 400m Ω @ 4.5A, 10V | 4V @ 1mA | 5.2A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||
| BUK9E3R7-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 293W Tc | 120A | 758A | 0.0037Ohm | 404 mJ | N-Channel | 13490pF @ 25V | 3.4m Ω @ 25A, 10V | 2.1V @ 1mA | 120A Tc | 95nC @ 5V | 5V 10V | ±10V | ||||||||||||
| BUK753R4-30B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk753r430b127-datasheets-6407.pdf | TO-220-3 | e3 | Matte Tin (Sn) | NO | 3 | FET General Purpose Power | 2013-06-14 00:00:00 | Single | 30V | 255W Tc | 75A | N-Channel | 4951pF @ 25V | 3.4m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| PH1825AL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph1825al115-datasheets-6408.pdf | SC-100, SOT-669 | 4 | 25V | 104W Tc | N-Channel | 4300pF @ 12V | 1.8m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 31nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| PSMN5R0-100XS,127 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-220-3 Full Pack, Isolated Tab | not_compliant | 3 | 100V | 63.8W Tc | N-Channel | 9900pF @ 50V | 5m Ω @ 15A, 10V | 4V @ 1mA | 67.5A Tc | 153nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BUK7E4R0-80E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nxpusainc-buk7e4r080e127-datasheets-6411.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 349W Tc | 120A | 758A | 0.004Ohm | 488 mJ | N-Channel | 12030pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 169nC @ 10V | 10V | ±20V | |||||||||||
| PHP45NQ10TA,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 100V | N-Channel | 2600pF @ 25V | 25m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 61nC @ 10V | |||||||||||||||||||||||||||||||||||||||
| BUK7226-75A/C1,118 | NXP USA Inc. | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk722675a118-datasheets-2064.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 75V | 158W Tc | N-Channel | 2385pF @ 25V | 26mOhm @ 25A, 10V | 4V @ 1mA | 45A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| BUK9515-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | not_compliant | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | Single | 60V | 96W Tc | 54A | N-Channel | 2651pF @ 25V | 13m Ω @ 15A, 10V | 2.1V @ 1mA | 54A Tc | 20.5nC @ 5V | 5V 10V | ±10V |
