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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PHP110NQ08T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-phb110nq08t118-datasheets-5514.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | TO-220AB | 75A | 440A | 0.009Ohm | 560 mJ | N-Channel | 4860pF @ 25V | 9m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 113.1nC @ 10V | 10V | ±20V | ||||||||||
| 2N7000,126 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-2n7000126-datasheets-6339.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | e3 | TIN | NO | BOTTOM | 250 | 3 | 40 | 1 | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Ta | 0.3A | 5Ohm | 10 pF | N-Channel | 40pF @ 10V | 5 Ω @ 500mA, 10V | 2V @ 1mA | 300mA Tc | 4.5V 10V | ±30V | ||||||||||||||||
| SI4420DY,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-si4420dy518-datasheets-6340.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | 8 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 0.0125A | 0.009Ohm | N-Channel | 9m Ω @ 12.5A, 10V | 1V @ 250μA | 120nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||
| PHP63NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-php63nq03lt127-datasheets-6341.pdf | TO-220-3 | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 111W Tc | TO-220AB | 68.9A | 240A | 0.0177Ohm | N-Channel | 920pF @ 25V | 13m Ω @ 25A, 10V | 2.5V @ 1mA | 68.9A Tc | 9.6nC @ 5V | 5V 10V | ±20V | ||||||||||||||||
| PHP47NQ10T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 166W | 100V | 100V | TO-220AB | 47A | 187A | 0.028Ohm | 45 mJ | N-Channel | 3100pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 66nC @ 10V | |||||||||||||||
| PHX14NQ20T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx14nq20t127-datasheets-6342.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 30W Tc | 7.6A | 30A | 0.23Ohm | 70 mJ | N-Channel | 1500pF @ 25V | 230m Ω @ 7A, 10V | 4V @ 1mA | 7.6A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||
| PHX23NQ10T,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-phx23nq10t127-datasheets-6343.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | EAR99 | FAST SWITCHING | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 27W Tc | TO-220AB | 13A | 52A | 0.07Ohm | 93 mJ | N-Channel | 1187pF @ 25V | 70m Ω @ 13A, 10V | 4V @ 1mA | 13A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||
| BUK754R3-40B,127 | NXP USA Inc. | $4.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk754r340b127-datasheets-6345.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 254W Tc | TO-220AB | 75A | 706A | 0.0043Ohm | 961 mJ | N-Channel | 4824pF @ 25V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||
| PH8030L,115 | NXP USA Inc. | $2.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph8030l115-datasheets-6347.pdf | SC-100, SOT-669 | 4 | EAR99 | not_compliant | 8541.29.00.95 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 62.5W Tc | 76.7A | 300A | 0.0097Ohm | 95 mJ | N-Channel | 2260pF @ 12V | 5.9m Ω @ 25A, 10V | 2.15V @ 1mA | 76.7A Tc | 15.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||
| BUK7E4R3-75C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | 3 | 2013-06-14 00:00:00 | 75V | 333W Tc | N-Channel | 11659pF @ 25V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 142nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PH9030L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nxpusainc-ph9030l115-datasheets-6350.pdf | SC-100, SOT-669 | 4 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 62.5W Tc | MO-235 | 63A | 214A | 0.0125Ohm | 53 mJ | N-Channel | 1565pF @ 12V | 9m Ω @ 25A, 10V | 2V @ 1mA | 63A Tc | 13.3nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||
| PHD16N03T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd16n03t118-datasheets-6351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 32.6W Tc | TO-252AA | 13.1A | 52.4A | 0.1Ohm | N-Channel | 180pF @ 30V | 100m Ω @ 13A, 10V | 4V @ 1mA | 13.1A Tc | 5.2nC @ 10V | 10V | ±20V | ||||||||||||
| BUK7E11-55B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7e1155b127-datasheets-6354.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 157W Tc | 75A | 338A | 0.011Ohm | 173 mJ | N-Channel | 2604pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||
| BUK9516-75B,127 | NXP USA Inc. | $3.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk951675b127-datasheets-6332.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 157W Tc | TO-220AB | 67A | 270A | 0.018Ohm | 140 mJ | N-Channel | 4034pF @ 25V | 14m Ω @ 25A, 10V | 2V @ 1mA | 67A Tc | 35nC @ 5V | 4.5V 10V | ±15V | |||||||||
| PHD82NQ03LT,118 | NXP USA Inc. | $7.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd82nq03lt118-datasheets-6334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 136W Tc | TO-252AA | 75A | 240A | 0.01Ohm | N-Channel | 1620pF @ 25V | 8m Ω @ 25A, 10V | 2.5V @ 1mA | 75A Tc | 16.7nC @ 5V | 5V 10V | ±20V | |||||||||||
| SI9410DY,518 | NXP USA Inc. | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/nxpusainc-si9410dy518-datasheets-6335.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | YES | DUAL | GULL WING | 8 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 0.007A | 0.03Ohm | N-Channel | 30m Ω @ 7A, 10V | 1V @ 250μA | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||
| PSMN020-150W,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn020150w127-datasheets-6337.pdf | TO-247-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 300W Tc | 73A | 290A | 0.02Ohm | 707 mJ | N-Channel | 9537pF @ 25V | 20m Ω @ 25A, 10V | 4V @ 1mA | 73A Tc | 227nC @ 10V | 10V | ±20V | ||||||||||||
| BUK9E4R4-40B,127 | NXP USA Inc. | $9.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 254W Tc | 75A | 697A | 0.0044Ohm | 961 mJ | N-Channel | 7124pF @ 25V | 4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 64nC @ 5V | 4.5V 10V | ±15V | |||||||||||
| BUK7E2R7-30B,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7e2r730b127-datasheets-6318.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 300W Tc | 75A | 967A | 0.0027Ohm | 2300 mJ | N-Channel | 6212pF @ 25V | 2.7m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 91nC @ 10V | 10V | ±20V | ||||||||||
| PSMN009-100W,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn009100w127-datasheets-6320.pdf | TO-247-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 100A | 300A | 0.009Ohm | 650 mJ | N-Channel | 9000pF @ 25V | 9m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 214nC @ 10V | 10V | ±20V | ||||||||||||
| BUK9528-55A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk962855a118-datasheets-6209.pdf | TO-220-3 | 3 | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 99W Tc | TO-220AB | 42A | 168A | 0.03Ohm | 57.8 mJ | N-Channel | 1700pF @ 25V | 28m Ω @ 20A, 5V | 2V @ 1mA | 40A Tc | 4.5V 10V | ±10V | |||||||||||||
| BUK7523-75A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk752375a127-datasheets-6327.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 138W Tc | TO-220AB | 53A | 213A | 0.023Ohm | 120 mJ | N-Channel | 2385pF @ 25V | 23m Ω @ 25A, 10V | 4V @ 1mA | 53A Tc | 10V | ±20V | ||||||||||||
| PHP21N06T,127 | NXP USA Inc. | $2.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php21n06t127-datasheets-6328.pdf | TO-220-3 | 3 | EAR99 | ESD PROTECTED | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 69W Tc | TO-220AB | 21A | 84A | 0.075Ohm | 30 mJ | N-Channel | 500pF @ 25V | 75m Ω @ 10A, 10V | 4V @ 1mA | 21A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||
| BUK9516-55A,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk951655a127-datasheets-6298.pdf | TO-220-3 | 3 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 138W Tc | TO-220AB | 66A | 263A | 0.017Ohm | 120 mJ | N-Channel | 3085pF @ 25V | 15m Ω @ 25A, 10V | 2V @ 1mA | 66A Tc | 5V 10V | ±10V | ||||||||||||
| PHB55N03LTA,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb55n03lta118-datasheets-6300.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 25V | 85W Tc | N-Channel | 950pF @ 25V | 14mOhm @ 25A, 10V | 2V @ 1mA | 55A Tc | 20nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| PHD34NQ10T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd34nq10t118-datasheets-6305.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 136W Tc | 35A | 140A | 0.04Ohm | 170 mJ | N-Channel | 1704pF @ 25V | 40m Ω @ 17A, 10V | 4V @ 1mA | 35A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||
| PHD37N06LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd37n06lt118-datasheets-6306.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 100W Tc | 37A | 148A | 0.035Ohm | 45 mJ | N-Channel | 1400pF @ 25V | 32m Ω @ 17A, 10V | 2V @ 1mA | 37A Tc | 22.5nC @ 5V | 5V 10V | ±13V | |||||||||||||
| PH3075L,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | SC-100, SOT-669 | 4 | EAR99 | LOGIC LEVEL | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 75W Tc | MO-235 | 30A | 120A | 0.034Ohm | 89 mJ | N-Channel | 2070pF @ 25V | 28m Ω @ 15A, 10V | 2.3V @ 1mA | 30A Tc | 19nC @ 5V | 4.5V 10V | ±15V | ||||||||||||
| PHK24NQ04LT,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-phk24nq04lt518-datasheets-6312.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | YES | DUAL | GULL WING | 8 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 6.25W Tc | MS-012 | 21.2A | 0.0077Ohm | N-Channel | 2985pF @ 25V | 7.7m Ω @ 14A, 10V | 2V @ 1mA | 21.2A Tc | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||
| BUK96150-55A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9515055a127-datasheets-6180.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 55V | 53W Tc | N-Channel | 339pF @ 25V | 137mOhm @ 13A, 10V | 2V @ 1mA | 13A Tc | 4.5V 10V | ±10V |
