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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Number of Terminations | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Transistor Element Material | Configuration | Case Connection | Transistor Application | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK751R6-30E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | NO | SINGLE | 3 | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 349W Tc | TO-220AB | 120A | 1408A | 0.0016Ohm | 1405 mJ | N-Channel | 11960pF @ 25V | 1.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 154nC @ 10V | 10V | ±20V | |||||||||||||||
| PHP45N03LTA,127 | NXP USA Inc. | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-php45n03lta127-datasheets-6376.pdf | TO-220-3 | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 65W Tc | TO-220AB | 40A | 160A | 0.024Ohm | 40 mJ | N-Channel | 700pF @ 25V | 21m Ω @ 25A, 10V | 2V @ 1mA | 40A Tc | 19nC @ 5V | 3.5V 10V | ±20V | ||||||||||||
| PHB119NQ06T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb119nq06t118-datasheets-6377.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 200W Tc | 75A | 240A | 0.0071Ohm | 280 mJ | N-Channel | 2820pF @ 25V | 7.1m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 53nC @ 10V | 10V | ±20V | |||||||||||||
| PH4530AL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | SC-100, SOT-669 | 30V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6507-55C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk650755c127-datasheets-6380.pdf | TO-220-3 | 3 | 2013-06-14 00:00:00 | 55V | 158W Tc | N-Channel | 5160pF @ 25V | 7m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 82nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||
| BUK753R5-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | not_compliant | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | Single | 60V | 293W Tc | 120A | N-Channel | 8920pF @ 25V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| PSMN016-100XS,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | TO-220-3 Full Pack, Isolated Tab | not_compliant | 3 | 2013-06-14 00:00:00 | 100V | 46.1W Tc | N-Channel | 2404pF @ 50V | 16m Ω @ 10A, 10V | 4V @ 1mA | 32.1A Tc | 46.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PHP45NQ10TA,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 100V | N-Channel | 2600pF @ 25V | 25m Ω @ 25A, 10V | 4V @ 1mA | 47A Tc | 61nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||
| BUK7226-75A/C1,118 | NXP USA Inc. | $1.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk722675a118-datasheets-2064.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 75V | 158W Tc | N-Channel | 2385pF @ 25V | 26mOhm @ 25A, 10V | 4V @ 1mA | 45A Tc | 48nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK9515-60E,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 | not_compliant | e3 | Tin (Sn) | NO | 3 | FET General Purpose Power | Single | 60V | 96W Tc | 54A | N-Channel | 2651pF @ 25V | 13m Ω @ 15A, 10V | 2.1V @ 1mA | 54A Tc | 20.5nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||
| PHB160NQ08T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/nxpusainc-php160nq08t127-datasheets-6314.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 300W Tc | 75A | 240A | 0.0056Ohm | 560 mJ | N-Channel | 5585pF @ 25V | 5.6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 91nC @ 10V | 10V | ±20V | ||||||||||||
| PHP71NQ03LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nxpusainc-php71nq03lt127-datasheets-6394.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 120W Tc | TO-220AB | 75A | 240A | 0.0152Ohm | N-Channel | 1220pF @ 25V | 10m Ω @ 25A, 10V | 2.5V @ 1mA | 75A Tc | 13.2nC @ 5V | 5V 10V | ±20V | |||||||||||||
| PHB110NQ08LT,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php110nq08lt127-datasheets-6363.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 75V | 230W Tc | N-Channel | 6631pF @ 25V | 8.5mOhm @ 25A, 10V | 2V @ 1mA | 75A Tc | 127.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BUK9213-30A,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk921330a118-datasheets-6371.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | 3 | 30V | 150W Tc | N-Channel | 2852pF @ 25V | 11m Ω @ 25A, 10V | 2V @ 1mA | 55A Tc | 37nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||
| SI4800,518 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | e4 | NICKEL PALLADIUM GOLD | YES | DUAL | GULL WING | 8 | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 9A | 40A | 0.0185Ohm | N-Channel | 18.5m Ω @ 9A, 10V | 800mV @ 250μA | 9A Ta | 11.8nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||
| PH2030AL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | SC-100, SOT-669 | 30V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y08-40B/C,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7y0840b115-datasheets-3251.pdf | SC-100, SOT-669 | 40V | 105W Tc | N-Channel | 2040pF @ 25V | 8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN004-60P,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 230W | 60V | 60V | TO-220AB | 75A | 400A | 0.0036Ohm | 500 mJ | N-Channel | 8300pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 168nC @ 10V | |||||||||||||||
| PHP55N03LTA,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phb55n03lta118-datasheets-6300.pdf | TO-220-3 | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 85W Tc | TO-220AB | 55A | 220A | 0.018Ohm | 60 mJ | N-Channel | 950pF @ 25V | 14m Ω @ 25A, 10V | 2V @ 1mA | 55A Tc | 20nC @ 5V | 5V 10V | ±20V | ||||||||||||
| BUK653R7-30C,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | TO-220-3 | 3 | 2013-06-14 00:00:00 | 30V | 158W Tc | N-Channel | 4707pF @ 25V | 3.9m Ω @ 25A, 10V | 2.8V @ 1mA | 100A Tc | 78nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| PMN50XP,165 | NXP Semiconductors |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nxpusainc-pmn50xp165-datasheets-6359.pdf | SC-74, SOT-457 | 6 | EAR99 | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2.2W Tc | 4.8A | 19.4A | 0.06Ohm | P-Channel | 1020pF @ 20V | 60m Ω @ 2.8A, 4.5V | 950mV @ 250μA | 4.8A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||
| PSMN003-30B,118 | NXP USA Inc. | $1.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn00330p127-datasheets-5837.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 230W Tc | 75A | 400A | 0.004Ohm | 500 mJ | N-Channel | 9200pF @ 25V | 2.8m Ω @ 25A, 10V | 3V @ 1mA | 75A Tc | 170nC @ 10V | 5V 10V | ±20V | |||||||||||
| BUK7524-55,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk752455127-datasheets-6362.pdf | TO-220-3 | 3 | ESD PROTECTION | unknown | NO | SINGLE | 3 | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 103W Tc | TO-220AB | 45A | 180A | 0.024Ohm | 80 mJ | N-Channel | 1500pF @ 25V | 24m Ω @ 25A, 10V | 4V @ 1mA | 45A Tc | 10V | ±16V | ||||||||||||||||||
| PHP110NQ08LT,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-php110nq08lt127-datasheets-6363.pdf | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | e3 | TIN | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 230W Tc | TO-220AB | 75A | 240A | 0.00995Ohm | 560 mJ | N-Channel | 6631pF @ 25V | 8.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 127.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||
| PHD77NQ03T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd77nq03t118-datasheets-6364.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | FAST SWITCHING | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 25V | 25V | 107W Tc | 75A | 240A | 0.0171Ohm | 100 mJ | N-Channel | 860pF @ 12V | 9.5m Ω @ 25A, 10V | 3.2V @ 1mA | 75A Tc | 17.1nC @ 10V | 10V | ±20V | |||||||||||||||
| PSMN013-100XS,127 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn013100xs127-datasheets-6365.pdf | TO-220-3 Full Pack, Isolated Tab | not_compliant | NO | 3 | FET General Purpose Power | 2013-06-14 00:00:00 | Single | 100V | 48.4W Tc | 35.2A | N-Channel | 3195pF @ 50V | 13.9m Ω @ 10A, 10V | 4V @ 1mA | 35.2A Tc | 57.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| BUK7Y25-40B/C,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7y2540b115-datasheets-4647.pdf | SC-100, SOT-669 | 40V | 59.4W Tc | N-Channel | 693pF @ 25V | 25m Ω @ 20A, 10V | 4V @ 1mA | 35.3A Tc | 12.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUK7628-55A,118 | NXP USA Inc. | $2.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk752855a127-datasheets-5742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 99W Tc | 42A | 168A | 0.028Ohm | 58 mJ | N-Channel | 1165pF @ 25V | 28m Ω @ 25A, 10V | 4V @ 1mA | 42A Tc | 10V | ±20V | ||||||||||||||
| 2N7002T,215 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/nxpusainc-2n7002t215-datasheets-6370.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 830mW Ta | TO-236AB | 0.3A | 5Ohm | 10 pF | N-Channel | 40pF @ 10V | 5 Ω @ 500mA, 10V | 2.5V @ 1mA | 300mA Ta | 5V 10V | ±20V | |||||||||||||||
| PHD16N03T,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/nxpusainc-phd16n03t118-datasheets-6351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | unknown | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 32.6W Tc | TO-252AA | 13.1A | 52.4A | 0.1Ohm | N-Channel | 180pF @ 30V | 100m Ω @ 13A, 10V | 4V @ 1mA | 13.1A Tc | 5.2nC @ 10V | 10V | ±20V |
