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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHG018N60E-GE3 | Vishay Siliconix | $14.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg018n60ege3-datasheets-7162.pdf | TO-247-3 | 18 Weeks | TO-247AC | 600V | 524W Tc | N-Channel | 7612pF @ 100V | 23mOhm @ 25A, 10V | 5V @ 250μA | 99A Tc | 228nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK210P10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtk210p10t-datasheets-3638.pdf | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | NO | SINGLE | THROUGH-HOLE | 3 | 150°C | 1 | Other Transistors | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 1040W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-264AA | 210A | 800A | 0.0075Ohm | 3000 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH2N170D2 | IXYS | $16.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n170d2-datasheets-9412.pdf | TO-247-3 | Lead Free | 568W | 1 | FET General Purpose Power | 2A | 20V | Single | 1700V | 568W Tc | N-Channel | 3650pF @ 10V | 6.5 Ω @ 1A, 0V | 2A Tj | 110nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK27N80Q | IXYS | $6.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfk27n80q-datasheets-7167.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20 ns | 28ns | 13 ns | 50 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFN200N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn200n10p-datasheets-7169.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 680W | 1 | Not Qualified | 35ns | 90 ns | 150 ns | 200A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 680W Tc | 0.0075Ohm | 100V | N-Channel | 7600pF @ 25V | 7.5m Ω @ 500mA, 10V | 5V @ 8mA | 200A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| UJ3C065030T3S | UnitedSiC | $15.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uj3c065030t3s-datasheets-7171.pdf | TO-220-3 | 12 Weeks | 650V | 441W Tc | N-Channel | 1500pF @ 100V | 35m Ω @ 50A, 12V | 6V @ 10mA | 85A Tc | 51nC @ 15V | 12V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL020N120SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nthl020n120sc1-datasheets-7174.pdf | TO-247-3 Variant | 6 Weeks | yes | 1200V | 535W Tc | N-Channel | 2890pF @ 800V | 28m Ω @ 60A, 20V | 4.3V @ 20mA | 103A Tc | 203nC @ 20V | 20V | +25V, -15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT36N50P | IXYS | $10.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth36n50p-datasheets-5556.pdf | 500V | 36A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | R-PSSO-G2 | 27ns | 21 ns | 75 ns | 36A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 500V | N-Channel | 5500pF @ 25V | 170m Ω @ 500mA, 10V | 5V @ 250μA | 36A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IXTT1N300P3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixtt1n300p3hv-datasheets-7175.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | unknown | 1A | 3000V | 195W Tc | N-Channel | 895pF @ 25V | 50 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 30.6nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STY60NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sty60nm50-datasheets-7148.pdf | 500V | 60A | TO-247-3 | 25.4mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 50mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STY60N | 3 | Single | 560W | 1 | FET General Purpose Power | 51 ns | 58ns | 46 ns | 60A | 30V | SILICON | SWITCHING | 4V | 560W Tc | 240A | 500V | N-Channel | 7500pF @ 25V | 50m Ω @ 30A, 10V | 5V @ 250μA | 60A Tc | 266nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTX120P20T | IXYS | $25.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-247-3 | 3 | 17 Weeks | EAR99 | AVALANCHE RATED | 1.04kW | SINGLE | 3 | 150°C | 1 | Other Transistors | R-PSIP-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 400A | 0.03Ohm | 3000 mJ | P-Channel | 73000pF @ 25V | 30m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 740nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL020N090SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nthl020n090sc1-datasheets-7154.pdf | TO-247-3 Variant | 22 Weeks | yes | 900V | 503W Tc | N-Channel | 4415pF @ 450V | 28m Ω @ 60A, 15V | 4.3V @ 20mA | 118A Tc | 196nC @ 15V | 15V | +19V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW70N60M2-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw70n60m24-datasheets-7155.pdf | TO-247-3 | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | STW70N | 68A | 600V | 450W Tc | N-Channel | 5200pF @ 100V | 40m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 118nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK94N50P2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/ixys-ixfk94n50p2-datasheets-7156.pdf | TO-264-3, TO-264AA | Lead Free | 30 Weeks | No | Single | 1.3kW | 1 | TO-264AA (IXFK) | 13.7nF | 94A | 30V | 500V | 1300W Tc | 55mOhm | 500V | N-Channel | 13700pF @ 25V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 94A Tc | 220nC @ 10V | 55 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX400N15X4 | IXYS | $41.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixtk400n15x4-datasheets-5726.pdf | TO-247-3 | 15 Weeks | 150V | 1500W Tc | N-Channel | 14500pF @ 25V | 3.1m Ω @ 100A, 10V | 4.5V @ 1mA | 400A Tc | 430nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX200N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtk200n10l2-datasheets-2333.pdf | TO-247-3 | 3 | 28 Weeks | 247 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1.04kW | 1 | FET General Purpose Power | R-PSIP-T3 | 200A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1040W Tc | 500A | 5000 mJ | N-Channel | 23000pF @ 25V | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 200A Tc | 540nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| R6076KNZ4C13 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6076knz4c13-datasheets-7130.pdf | TO-247-3 | 3 | 8 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 735W Tc | 76A | 228A | 0.042Ohm | 1954 mJ | N-Channel | 7400pF @ 25V | 42m Ω @ 44.4A, 10V | 5V @ 1mA | 76A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVBG020N090SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvbg020n090sc1-datasheets-7115.pdf | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 20 Weeks | yes | 900V | 3.7W Ta 477W Tc | N-Channel | 4415pF @ 450V | 28m Ω @ 60A, 15V | 4.3V @ 20mA | 9.8A Ta 112A Tc | 200nC @ 15V | 15V | +19V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMZA65R027M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UF3C065030K4S | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065030k4s-datasheets-7136.pdf | TO-247-4 | 12 Weeks | 650V | 441W Tc | N-Channel | 1500pF @ 100V | 35m Ω @ 50A, 12V | 6V @ 10mA | 85A Tc | 43nC @ 12V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STE139N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste139n65m5-datasheets-7138.pdf | SOT-227-4, miniBLOC | Lead Free | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STE1 | NOT SPECIFIED | 650V | 672W Tc | N-Channel | 15600pF @ 100V | 17m Ω @ 65A, 10V | 5V @ 250μA | 130A Tc | 363nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH52N30P | IXYS | $9.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh52n30p-datasheets-7139.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | FET General Purpose Power | Not Qualified | 24 ns | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 0.066Ohm | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 4mA | 52A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTK200N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtk200n10p-datasheets-7141.pdf | TO-264-3, TO-264AA | Lead Free | 28 Weeks | No SVHC | 3 | Single | 800W | TO-264 (IXTK) | 7.6nF | 35ns | 90 ns | 150 ns | 200A | 20V | 100V | 5V | 800W Tc | 7.5mOhm | 100V | N-Channel | 7600pF @ 25V | 7.5mOhm @ 100A, 10V | 5V @ 500μA | 200A Tc | 240nC @ 10V | 7.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVHL020N120SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvhl020n120sc1-datasheets-7143.pdf | TO-247-3 Variant | 10 Weeks | yes | 1200V | 535W Tc | N-Channel | 2890pF @ 800V | 28m Ω @ 60A, 20V | 4.3V @ 20mA | 103A Tc | 203nC @ 20V | 20V | +25V, -15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR64N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfr64n60p-datasheets-7109.pdf | 600V | 64A | ISOPLUS247™ | 16.13mm | 21.34mm | 5.21mm | Lead Free | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | R-PSIP-T3 | 28 ns | 23ns | 24 ns | 79 ns | 36A | 30V | SILICON | ISOLATED | SWITCHING | 320W Tc | 3500 mJ | 600V | N-Channel | 12000pF @ 25V | 105m Ω @ 32A, 10V | 5V @ 8mA | 36A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFX420N10T | IXYS | $2.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfx420n10t-datasheets-7144.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 420A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1670W Tc | 0.0026Ohm | 5000 mJ | N-Channel | 47000pF @ 25V | 2.6m Ω @ 60A, 10V | 5V @ 8mA | 420A Tc | 670nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STS10P3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts10p3llh6-datasheets-6493.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 20 Weeks | 8 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STS10 | NOT SPECIFIED | Other Transistors | 10A | Single | 30V | 2.7W Ta | P-Channel | 3350pF @ 25V | 12m Ω @ 5A, 10V | 1V @ 250μA (Min) | 10A Ta | 33nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6050JNZ4C13 | ROHM Semiconductor | $42.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6050jnz4c13-datasheets-7116.pdf | TO-247-3 | 8 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 615W Tc | N-Channel | 4500pF @ 100V | 83m Ω @ 25A, 15V | 7V @ 5mA | 50A Tc | 120nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT80N20L | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixth80n20l-datasheets-5563.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 520W | 1 | FET General Purpose Power | R-PSSO-G2 | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 520W Tc | 340A | 0.032Ohm | 2500 mJ | N-Channel | 6160pF @ 25V | 32m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFH170N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk170n10p-datasheets-5575.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 9MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 714W | 1 | FET General Purpose Power | 35 ns | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 5V | 715W Tc | TO-247AD | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 4mA | 170A Tc | 198nC @ 10V | 10V | ±20V |
