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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTX200N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtk200n10l2-datasheets-2333.pdf | TO-247-3 | 3 | 28 Weeks | 247 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1.04kW | 1 | FET General Purpose Power | R-PSIP-T3 | 200A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 1040W Tc | 500A | 5000 mJ | N-Channel | 23000pF @ 25V | 11m Ω @ 100A, 10V | 4.5V @ 3mA | 200A Tc | 540nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPT60R022S7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™S7 | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSFN | 18 Weeks | 600V | 390W Tc | N-Channel | 5639pF @ 300V | 22m Ω @ 23A, 12V | 4.5V @ 1.44mA | 23A Tc | 150nC @ 12V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW54NM65ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-247-3 | Lead Free | 3 | 42 Weeks | 65MOhm | EAR99 | No | e3 | Tin (Sn) | STW54N | 3 | Single | 350W | 1 | R-PSFM-T3 | 59ns | 98 ns | 152 ns | 49A | 25V | SILICON | SWITCHING | 350W Tc | 850 mJ | 650V | N-Channel | 6200pF @ 50V | 65m Ω @ 24.5A, 10V | 5V @ 250μA | 49A Tc | 188nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| IXTT120N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt120n15p-datasheets-7098.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 9 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 600W | 1 | R-PSSO-G2 | 42ns | 26 ns | 85 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 260A | 2000 mJ | 150V | N-Channel | 4900pF @ 25V | 16m Ω @ 500mA, 10V | 5V @ 250μA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| UF3C065040T3S | UnitedSiC | $11.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065040t3s-datasheets-7100.pdf | TO-220-3 | 12 Weeks | 650V | 326W Tc | N-Channel | 1500pF @ 100V | 52m Ω @ 40A, 12V | 6V @ 10mA | 54A Tc | 51nC @ 15V | 12V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL060N090SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/onsemiconductor-nthl060n090sc1-datasheets-7102.pdf | TO-247-3 Variant | 24 Weeks | yes | 900V | 221W Tc | N-Channel | 1770pF @ 450V | 84m Ω @ 20A, 15V | 4.3V @ 5mA | 46A Tc | 87nC @ 15V | 15V | +19V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH18N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/ixys-ixfh18n90p-datasheets-7103.pdf | TO-247-3 | 30 Weeks | No SVHC | 3 | Single | 540W | TO-247AD (IXFH) | 5.23nF | 33ns | 44 ns | 60 ns | 18A | 30V | 900V | 540W Tc | 600mOhm | 900V | N-Channel | 5230pF @ 25V | 600mOhm @ 500mA, 10V | 6.5V @ 1mA | 18A Tc | 97nC @ 10V | 600 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| UJ3C065080K3S | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uj3c065080k3s-datasheets-7067.pdf | TO-247-3 | 12 Weeks | 650V | 190W Tc | N-Channel | 1500pF @ 100V | 111m Ω @ 20A, 12V | 6V @ 10mA | 31A Tc | 51nC @ 15V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH20N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfh20n100p-datasheets-7106.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 660W | 1 | FET General Purpose Power | R-PSFM-T3 | 37ns | 45 ns | 56 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 660W Tc | TO-247AD | 50A | 0.57Ohm | 800 mJ | 1kV | N-Channel | 7300pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 126nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXTH140P10T | IXYS | $15.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixth140p10t-datasheets-7071.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | SINGLE | 3 | 1 | Other Transistors | R-PSFM-T3 | 140A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 568W Tc | TO-247AD | 400A | 0.012Ohm | 2000 mJ | P-Channel | 31400pF @ 25V | 12m Ω @ 70A, 10V | 4V @ 250μA | 140A Tc | 400nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||||||
| MSC180SMA120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ170N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtt170n10p-datasheets-5567.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 714W | 1 | FET General Purpose Power | Not Qualified | 50ns | 33 ns | 90 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 5V | 715W Tc | 0.009Ohm | 2000 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 500mA, 10V | 5V @ 250μA | 170A Tc | 198nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXTH16N10D2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtt16n10d2-datasheets-5658.pdf | TO-247-3 | 3 | 24 Weeks | yes | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 43ns | 70 ns | 340 ns | 16A | SILICON | DRAIN | SWITCHING | 100V | 830W Tc | 0.064Ohm | N-Channel | 5700pF @ 25V | 64m Ω @ 8A, 0V | 16A Tc | 225nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHG47N60AEF-GE3 | Vishay Siliconix | $6.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aefge3-datasheets-7077.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 313W Tc | N-Channel | 3576pF @ 100V | 70mOhm @ 23.5A, 10V | 4V @ 250μA | 40A Tc | 189nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MSC280SMA120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | TO-247-3 | TO-247-3 | 1.2kV | 55W Tc | N-Channel | 300pF @ 1000V | 350mOhm @ 5A, 20V | 2.8V @ 1mA | 9.4A Tc | 20nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UF3C065030B3 | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065030b3-datasheets-7069.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 650V | 242W Tc | N-Channel | 1500pF @ 100V | 35m Ω @ 40A, 12V | 6V @ 10mA | 65A Tc | 51nC @ 15V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH12N150 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixtt12n150-datasheets-5663.pdf | TO-247-3 | 3 | 28 Weeks | EAR99 | AVALANCHE RATED | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | R-PSFM-T3 | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1500V | 890W Tc | TO-247AD | 40A | 2Ohm | 750 mJ | N-Channel | 3720pF @ 25V | 2 Ω @ 6A, 10V | 4.5V @ 250μA | 12A Tc | 106nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXTQ40N50L2 | IXYS | $18.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtt40n50l2-datasheets-2083.pdf | TO-3P-3, SC-65-3 | 3 | 24 Weeks | No SVHC | 170mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 540W | 1 | FET General Purpose Powers | Not Qualified | 40A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 540W Tc | 80A | 2000 mJ | N-Channel | 10400pF @ 25V | 2.5 V | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 40A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFK200N10P | IXYS | $49.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfk200n10p-datasheets-7092.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 7.5MOhm | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 35ns | 90 ns | 150 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 830W Tc | 400A | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 7.5m Ω @ 100A, 10V | 5V @ 8mA | 200A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFX120N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx120n25p-datasheets-7049.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 24MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 33ns | 33 ns | 130 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 700W Tc | 2500 mJ | 250V | N-Channel | 8000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| UF3C065040K4S | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065040k4s-datasheets-7051.pdf | TO-247-4 | 12 Weeks | 650V | 326W Tc | N-Channel | 1500pF @ 100V | 52m Ω @ 40A, 12V | 6V @ 10mA | 54A Tc | 43nC @ 12V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH88N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfh88n30p-datasheets-7053.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | TO-247AD | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 4mA | 88A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| IXFH24N90P | IXYS | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n90p-datasheets-5610.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 660W | 1 | FET General Purpose Power | Not Qualified | 40ns | 38 ns | 68 ns | 24A | 30V | SILICON | DRAIN | SWITCHING | 3.5V | 660W Tc | TO-247AD | 48A | 0.42Ohm | 1000 mJ | 900V | N-Channel | 7200pF @ 25V | 3.5 V | 420m Ω @ 12A, 10V | 6.5V @ 1mA | 24A Tc | 130nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| TP65H150LSG | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 3 (168 Hours) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 3-PowerDFN | 650V | 69W Tc | N-Channel | 576pF @ 400V | 180m Ω @ 10A, 10V | 4.8V @ 500μA | 15A Tc | 7.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA3N150HV | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/ixys-ixta3n150hv-datasheets-7018.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 3A | 1500V | 250W Tc | N-Channel | 1375pF @ 25V | 7.3 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 38.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW75N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw75n60m6-datasheets-7062.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 600V | 446W Tc | N-Channel | 4850pF @ 100V | 36m Ω @ 36A, 10V | 4.75V @ 250μA | 72A Tc | 106nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UF3C065080B3 | UnitedSiC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065080b3-datasheets-6824.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 650V | N-Channel | 25A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF38N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw38n65m5-datasheets-2042.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 95mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | e3 | MATTE TIN | STF38N | Single | 35W | 1 | FET General Purpose Powers | 66 ns | 9ns | 9 ns | 66 ns | 30A | 25V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 660 mJ | 650V | N-Channel | 3000pF @ 100V | 95m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 71nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| IXFH6N120P | IXYS | $2.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfa6n120p-datasheets-9264.pdf | TO-247-3 | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 250W Tc | 6A | 18A | 0.0024Ohm | 300 mJ | N-Channel | 2830pF @ 25V | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 6A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| UF3C065040K3S | UnitedSiC | $11.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065040k3s-datasheets-7029.pdf | TO-247-3 | 12 Weeks | 650V | 326W Tc | N-Channel | 1500pF @ 100V | 52m Ω @ 40A, 12V | 6V @ 10mA | 54A Tc | 51nC @ 15V | 12V | ±25V |
